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DOE OSTI · 2483388

Nonvolatile electrochemical memory at 600°C enabled by composition phase separation

Li, Jingxian [Univ. of Michigan, Ann Arbor, MI (United States)]·Jalbert, Andrew J. [Univ. of Michigan, Ann Arbor, MI (United States)]·Lee, Sangyong [Univ. of Michigan, Ann Arbor, MI (United States)]·Simakas, Leah S. [Univ. of Michigan, Ann Arbor, MI (United States)]·Geisler, Noah J. [Univ. of Michigan, Ann Arbor, MI (United States)]·Watkins, Virgil J. [Univ. of Michigan, Ann Arbor, MI (United States)]·Cline, Laszlo A. [Univ. of Michigan, Ann Arbor, MI (United States)]·Fuller, Elliot J. [Sandia National Lab. (SNL-CA), Livermore, CA (United States)]·Talin, A. Alec [Sandia National Lab. (SNL-CA), Livermore, CA (United States)]·Li, Yiyang [Univ. of Michigan, Ann Arbor, MI (United States)] (ORCID:0000000258096901)
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Abstract

Silicon-based microelectronics are limited to ~150°C and therefore not suitable for the extremely high temperatures in aerospace, energy, and space applications. While wide-band-gap semiconductors can provide high-temperature logic, nonvolatile memory devices at high temperatures have been challenging. In this work, we develop a nonvolatile electrochemical memory cell that stores and retains analog and digital information at temperatures as high as 600°C. Through correlative scanning transmission electron microscopy, we show that this high-temperature information retention is a result of composition phase separation between the oxidized and reduced forms of amorphous tantalum oxide. This result demonstrates a memory concept that is resilient at extreme temperatures and reveals phase separation as the principal mechanism that enables nonvolatile information storage in these electrochemical memory cells.

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42 ENGINEERINGelectrochemical memoryextreme environmentshigh-temperature electronicsnonvolatile memoryphase separationresistive memorytantalum oxide

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Li, Jingxian [Univ. of Michigan, Ann Arbor, MI (United States)], Jalbert, Andrew J. [Univ. of Michigan, Ann Arbor, MI (United States)], Lee, Sangyong [Univ. of Michigan, Ann Arbor, MI (United States)], Simakas, Leah S. [Univ. of Michigan, Ann Arbor, MI (United States)], Geisler, Noah J. [Univ. of Michigan, Ann Arbor, MI (United States)], Watkins, Virgil J. [Univ. of Michigan, Ann Arbor, MI (United States)], Cline, Laszlo A. [Univ. of Michigan, Ann Arbor, MI (United States)], Fuller, Elliot J. [Sandia National Lab. (SNL-CA), Livermore, CA (United States)], Talin, A. Alec [Sandia National Lab. (SNL-CA), Livermore, CA (United States)], Li, Yiyang [Univ. of Michigan, Ann Arbor, MI (United States)] (ORCID:0000000258096901). 2024-12-04. Nonvolatile electrochemical memory at 600°C enabled by composition phase separation. https://doi.org/10.1016/j.device.2024.100623

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