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DOE OSTI · 2541942

Systems and methods for dynamically reconfigurable artificial synapses and neurons with tunable activation functions

Abstract

An ionic redox transistor comprises a solid channel, a solid reservoir layer, and a solid electrolyte layer disposed between the channel and the reservoir layer. The channel exhibits a substantially linear current-voltage relationship in a first range of voltages, and a nonlinear current-voltage relationship in a second range of voltages that is greater than the first range of voltages. One or both of the substantially linear current-voltage relationship or the nonlinear current-voltage relationship of the channel is varied by changing the concentration of ions such as oxygen vacancies in the channel. Ion or vacancy transport between the channel and the reservoir layer across the electrolyte layer occurs in response to applying a voltage between the channel and the reservoir layer. Subject to the first range of voltages, the channel can function as a synapse device. Subject to the second range of voltages, the channel can function as a neuron device.

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BibTeXRIS

Talin, Albert Alec, Fuller, Elliot James, Bennett, Christopher, Xiao, Tianyao, Marinella, Matthew, Kumar, Suhas. 2024-03-12. Systems and methods for dynamically reconfigurable artificial synapses and neurons with tunable activation functions. https://www.osti.gov/biblio/2541942

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