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DOE OSTI · 2543127

PtCoO 2 for Scaled Interconnects

Abstract

Copper (Cu) interconnects are an increasingly important bottleneck in integrated circuits due to energy consumption and latency caused by the notable increase in Cu resistivity as dimensions decrease, primarily due to electron scattering at surfaces. Herein, the potential of a directional conductor, PtCoO 2 , which has a low bulk resistivity and a distinctive anisotropic structure that mitigates electron surface scattering is showcased. Thin films of PtCoO 2 of various thicknesses are synthesized by molecular beam epitaxy (MBE) coupled with a postdeposition annealing process and the superior quality of PtCoO 2 films is demonstrated by multiple characterization techniques. The thickness‐dependent resistivity curve illustrates that PtCoO 2 significantly outperforms effective Cu (Cu with TaN barriers) and Ru in resistivity below 20.0 nm with a more than 6x reduction compared to effective Cu below 6.0 nm, having a value of only 6.32 μΩ cm at 3.3 nm. It is determined that grain boundary scattering can still be improved for even lower resistivities in this material system through a combination of experiments and theoretical simulations. PtCoO 2 is therefore a highly promising alternative material for future interconnect technologies promising lower resistivities, better stability, and significant improvements in energy efficiency and latency for advanced integrated circuits.

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BibTeXRIS

Li, Yansong [Department of Electrical Engineering University of Notre Dame Notre Dame IN 46556 USA], Zhou, Guanyu [Department of Electrical Engineering University of Notre Dame Notre Dame IN 46556 USA], Kelley, Michelle M. [Department of Materials Science and Engineering Rensselaer Polytechnic Institute Troy NY 12180 USA], Shahriyar Nishat, Sadiq [Department of Materials Science and Engineering Rensselaer Polytechnic Institute Troy NY 12180 USA], Bey, Sara [Department of Physics and Astronomy University of Notre Dame Notre Dame IN 46556 USA], Abdul Karim, Muhsin [Department of Physics and Astronomy University of Notre Dame Notre Dame IN 46556 USA], Liu, Xinyu [Department of Physics and Astronomy University of Notre Dame Notre Dame IN 46556 USA], Assaf, Badih A. [Department of Physics and Astronomy University of Notre Dame Notre Dame IN 46556 USA], Gall, Daniel [Department of Materials Science and Engineering Rensselaer Polytechnic Institute Troy NY 12180 USA], Sundararaman, Ravishankar [Department of Materials Science and Engineering Rensselaer Polytechnic Institute Troy NY 12180 USA], Hinkle, Christopher L. [Department of Electrical Engineering University of Notre Dame Notre Dame IN 46556 USA] (ORCID:0000000254856600). 2025-03-27. PtCoO 2 for Scaled Interconnects. https://doi.org/10.1002/sstr.202400638

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