DOE OSTI · 2572035
Lithography-Defined Semiconductor Moirés with Anomalous In-Gap Quantum Hall States
Abstract
Quantum materials and phenomena have attracted great interest for their potential applications in next-generation microelectronics and quantum-information technologies. In one especially interesting class of quantum materials, moiré superlattices (MSLs) formed by twisted bilayers of 2D materials, a wide range of novel phenomena are observed. However, there exist daunting challenges such as reproducibility and scalability of utilizing 2D MSLs for microelectronics and quantum technologies due to their exfoliate-tear-stack method. Here, we propose lithography-defined semiconductor MSLs, in which three fundamental parameters electron−electron interaction, spin−orbit coupling, and band topology are designable. We experimentally investigate quantum-transport properties in a moiré specimen made in an InAs quantum well. Strong anomalous in-gap states are observed within the same integer quantum Hall state. Our work opens up new horizons for studying 2D quantum-materials phenomena in semiconductors featuring superior industry-level quality and state-of-the-art technologies, and they may potentially enable new quantum-information and microelectronics technologies.
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Pan, Wei [Sandia National Laboratories (SNL-CA), Livermore, CA (United States)] (ORCID:0000000256295296), Burckel, D. Bruce [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)], Spataru, Catalin D. [Sandia National Laboratories (SNL-CA), Livermore, CA (United States)], Sapkota, Keshab R. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000185814211), Muhowski, Aaron J. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)], Hawkins, Samuel D. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)], Klem, John F. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)], Smith, Layla S. [Norfolk State University, VA (United States); Sandia National Laboratories (SNL-CA), Livermore, CA (United States)], Temple, Doyle A. [Norfolk State University, VA (United States)], Enderson, Zachery A. [Oak Ridge Institute for Science and Education Postdoctoral Fellowship, Oak Ridge, TN (United States); Georgia Institute of Technology, Atlanta, GA (United States)] (ORCID:0000000249198770), Jiang, Zhigang [Georgia Institute of Technology, Atlanta, GA (United States)] (ORCID:0000000198843337), Thirunavukkuarasu, Komalavalli [Florida A&M University, Tallahassee, FL (United States); National High Magnetic Field Laboratory, Tallahassee, FL (United States)] (ORCID:0000000161482670), Xiang, Li [National High Magnetic Field Laboratory, Tallahassee, FL (United States)], Ozerov, Mykhaylo [National High Magnetic Field Laboratory, Tallahassee, FL (United States)] (ORCID:0000000254701158), Smirnov, Dmitry [National High Magnetic Field Laboratory, Tallahassee, FL (United States)] (ORCID:0000000163583221), Niu, Chang [Purdue University, West Lafayette, IN (United States)] (ORCID:0000000331757164), Ye, Peide D. [Purdue University, West Lafayette, IN (United States)] (ORCID:0000000184669745), Pai, Praveen [University of Texas at Dallas, Richardson, TX (United States)], Zhang, Fan [University of Texas at Dallas, Richardson, TX (United States)]. 2025-06-06. Lithography-Defined Semiconductor Moirés with Anomalous In-Gap Quantum Hall States. https://doi.org/10.1021/acs.nanolett.5c02180
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