DOE OSTI · 2573090
Controlling structural phases of Sn through lattice engineering
Abstract
Topology and superconductivity, two distinct phenomena, offer unique insight into quantum properties and their applications in quantum technologies, spintronics, and sustainable energy technologies. Tin (Sn) plays a pivotal role here as an element because of its two structural phases, α-Sn exhibiting topological characteristics and β-Sn showing superconductivity. Here, we demonstrate precise control of these phases in Sn thin films using molecular beam epitaxy with systematically varied lattice parameters of the buffer layer. The Sn films exhibit either β-Sn or α-Sn phases as the buffer layer's lattice constant varies from 6.10 Å to 6.48 Å, spanning the range from GaSb (like InAs) to InSb. Further, the crystal structures of α- and β-Sn films are characterized by x-ray diffraction and confirmed by Raman spectroscopy and scanning transmission electron microscopy. Atomic force microscopy validates the smooth, continuous surface morphology. Electrical transport measurements further verify the phases: resistance drop near 3.7 K for β-Sn superconductivity and Shubnikov-de Haas oscillations for α-Sn topological characteristics. Density functional theory shows that α-Sn is stable under tensile strain and β-Sn under compressive strain, aligning well with experimental findings. Hence, this study introduces a platform controlling Sn phases through lattice engineering, enabling innovative applications in quantum technologies and beyond.
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Edirisinghe, Chandima Kasun [Univ. of Tennessee, Knoxville, TN (United States)] (ORCID:0009000626345834), Rathore, Anjali [Univ. of Tennessee, Knoxville, TN (United States)] (ORCID:0000000271350206), Lee, Taegeon [Jeonbuk National University, Jeonju (Korea, Republic of)], Lee, Daekwon [Jeonbuk National University, Jeonju (Korea, Republic of)], Chen, An-Hsi [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)] (ORCID:0000000203399657), Baucom, Garrett [Univ. of Florida, Gainesville, FL (United States)] (ORCID:000900068768838X), Hershkovitz, Eitan [Univ. of Florida, Gainesville, FL (United States)] (ORCID:0000000192103266), Wijesinghe, Anuradha [Univ. of Tennessee, Knoxville, TN (United States)] (ORCID:0009000951948081), Adhikari, Pradip [Univ. of Tennessee, Knoxville, TN (United States)] (ORCID:0009000100648777), Yeom, Sinchul [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)] (ORCID:0000000164490844), Lee, Hong Seok [Univ. of Tennessee, Knoxville, TN (United States); Jeonbuk National University, Jeonju (Korea, Republic of)] (ORCID:0000000212920731), Choi, Hyung-Kook [Univ. of Tennessee, Knoxville, TN (United States); Jeonbuk National University, Jeonju (Korea, Republic of)], Kim, Hyunsoo [Missouri Univ. of Science and Technology, Rolla, MO (United States)] (ORCID:0000000298921080), Yoon, Mina [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)] (ORCID:0000000213173301), Kim, Honggyu [Univ. of Florida, Gainesville, FL (United States)] (ORCID:0000000210674434), Brahlek, Matthew [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)] (ORCID:0000000329000648), Rho, Heesuk [Jeonbuk National University, Jeonju (Korea, Republic of)], Lee, Joon Sue [Univ. of Tennessee, Knoxville, TN (United States)] (ORCID:0000000210011462). 2025-02-10. Controlling structural phases of Sn through lattice engineering. https://doi.org/10.1103/physrevmaterials.9.024202
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