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DOE OSTI · 2579988

High-temperature quantum valley Hall effect with quantized resistance and a topological switch

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Abstract

Edge states of a topological insulator can be used to explore fundamental science emerging at the interface of low dimensionality and topology. Achieving a robust conductance quantization, however, has proven challenging for helical edge states. In this work, we show wide resistance plateaus in kink states—a manifestation of the quantum valley Hall effect in Bernal bilayer graphene—quantized to the predicted value at zero magnetic field. The plateau resistance has a very weak temperature dependence up to 50 kelvin and is flat within a dc bias window of tens of millivolts. We demonstrate the electrical operation of a topology-controlled switch with an on/off ratio of 200. These results demonstrate the robustness and tunability of the kink states and its promise in constructing electron quantum optics devices.

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BibTeXRIS

Huang, Ke (ORCID:0000000185216465), Fu, Hailong (ORCID:0000000159282979), Watanabe, Kenji (ORCID:0000000337018119), Taniguchi, Takashi (ORCID:0000000214673105), Zhu, Jun (ORCID:000000018100967X). 2024-08-09. High-temperature quantum valley Hall effect with quantized resistance and a topological switch. https://doi.org/10.1126/science.adj3742

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