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DOE OSTI · 2583475

Epitaxial Growth Development: CRADA Final Report

Alberi, Kirstin [National Renewable Energy Laboratory (NREL), Golden, CO (United States)]·Loyo-Maldonado, Valentin [Trumpf Photonics, Inc, Cranbury, NJ (United States)]
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Abstract

The purpose of this CRADA is to assist Trumpf Photonics in developing a procedure to grow ZnSe epilayers on the (110) facets of AlGaAs/InGaAs laser diodes that will provide high degrees of electronic passivation and performance reliability. Work will be divided into four tasks: 1) characterization of material growth at Trumpf Photonics, 2) development of a highly effective AlGaAs facet cleaning procedure at NREL, 3) development of a ZnSe epitaxy procedure at NREL, and 4) transfer of the procedures developed at NREL to the Trumpf Photonics site. This CRADA is designed to last 3 years total.

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36 MATERIALS SCIENCECRADAepitaxylaser

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Alberi, Kirstin [National Renewable Energy Laboratory (NREL), Golden, CO (United States)], Loyo-Maldonado, Valentin [Trumpf Photonics, Inc, Cranbury, NJ (United States)]. 2025-07-24. Epitaxial Growth Development: CRADA Final Report. https://doi.org/10.2172/2583475

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