DOE OSTI · 2585694
Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors
Abstract
We report on low-frequency measurements of few electrons floating on superfluid helium using a bespoke cryogenic cascode amplifier circuit built with off-the-shelf GaAs high-electron-mobility transistors (HEMTs). We integrate this circuit with a charge-coupled device (CCD) to transport the electrons on helium and characterize its performance. Here, we show that this circuit has a signal-to-noise ratio (SNR) of ~ 2 $\frac{e}{√Hz}$ at 102 kHz, an order of magnitude improvement from previous implementations, and provides a compelling alternative to few electron sensing with high-frequency resonators.
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Feldman, Mayer M. [Princeton University, NJ (United States)], Fuchs, Gordian [Princeton University, NJ (United States)], Liu, Lydia T. [Princeton University, NJ (United States)], D’Imperio, Luke Anthony [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)], Henry, Michael David [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)], Shaner, Eric A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)], Lyon, Stephen A. [Princeton University, NJ (United States); EeroQ Corporation, Chicago, IL (United States)]. 2025-01-22. Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors. https://doi.org/10.1007/s10909-024-03256-1
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