Search NASASearch

DOE OSTI · 2873348

Large negative magnetoresistance in antiferromagnetic G⁡d 2 ⁢S⁢e 3

Abstract

Rare earth chalcogenides provide a great platform to study exotic quantum phenomena such as superconductivity and charge density waves. Among various interesting properties, the coupling between magnetism and electronic transport has attracted significant attention. Here, we report the investigation of such coupling in α-G⁡d 2⁢ S⁢e 3 single crystals through magnetic, calorimetric, and transport property measurements. α-G⁡d 2 ⁢S⁢e 3 is found to display an antiferromagnetic ground state below 11 K with metamagnetic spin-flop transitions. The magnetic fluctuations remain strong above the transition temperature. Transport measurements reveal an overall metallic transport behavior with a large negative magnetoresistance of approximately 65% near the magnetic transition temperature, together with positive magnetoresistance near the field-induced spin-flop transitions, which can be understood in terms of the suppression of spin scattering by the magnetic field.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Karki Chhetri, Santosh [Univ. of Arkansas, Fayetteville, AR (United States)] (ORCID:0000000318586655), Acharya, Gokul [Univ. of Arkansas, Fayetteville, AR (United States)], Graf, David [Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)], Basnet, Rabindra [Univ. of Arkansas, Fayetteville, AR (United States); Univ. of Arkansas, Pine Bluff, AR (United States)] (ORCID:0000000255113155), Rahman, Sumaya [Univ. of Arkansas, Fayetteville, AR (United States)], Sharma, M. M. [Univ. of Arkansas, Fayetteville, AR (United States)] (ORCID:000000029212438X), Upreti, Dinesh [Univ. of Arkansas, Fayetteville, AR (United States)], Nabi, Md Rafique Un [Univ. of Arkansas, Fayetteville, AR (United States)], Kryvyi, Serhii [Univ. of Arkansas, Fayetteville, AR (United States)] (ORCID:0000000332023154), Sakon, Josh [Univ. of Arkansas, Fayetteville, AR (United States)] (ORCID:000000028373969X), Mortazavi, Mansour [Univ. of Arkansas, Pine Bluff, AR (United States)], Da, Bo [National Institute for Materials Science (NIMS), Tsukuba (Japan)], Churchill, Hugh [Univ. of Arkansas, Fayetteville, AR (United States)] (ORCID:0000000282871373), Hu, Jin [Univ. of Arkansas, Fayetteville, AR (United States)] (ORCID:0000000300804239). 2025-01-22. Large negative magnetoresistance in antiferromagnetic G⁡d 2 ⁢S⁢e 3. https://doi.org/10.1103/physrevb.111.014431

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related reports

In Situ Imaging Reveals Efficient Charge Separation in Monolayer MoS 2 –WS 2 Type-II Heterojunctions

Covalently bonded in-plane two-dimensional (2D) transition metal dichalcogenide (TMD) heterojunctions with atomically sharp interfaces hold great promise for photocatalytic applications in solar energy conversion and environmental remediation; however, their spatially resolved charge distribution and transport, particularly under operando conditions, remain poorly understood. Here, we employ photoscanning electrochemical microscopy (photo-SECM) to directly visualize photoinduced charge separation in monolayer MoS 2 –WS 2 in-plane heterojunctions. Spatial separation of photogenerated carriers is observed, with electrons accumulating in MoS 2 and holes in WS 2 , leading to strongly asymmetric interfacial kinetics: Fc + reduction proceeds rapidly on MoS 2 (0.6 cm s –1 ), whereas Fc oxidation on WS 2 is significantly slower (0.008 cm s –1 ). High-resolution surface photovoltage microscopy (SPVM) enables a quantitative comparison of charge-separation capacity across architectures. The in-plane MoS 2 –WS 2 heterojunction shows the largest photovoltage contrast (−35 mV in MoS 2 , 20 mV in WS 2 ), exceeding the vertical heterojunction (−18 mV in MoS 2 , 11 mV in WS 2 ) and the individual monolayers (−12 mV for MoS 2 , – 1 mV for WS 2 ), establishing the following trend: in-plane > vertical > monolayers. Ultraviolet photoelectron spectroscopy (UPS) indicates that this directional charge separation is driven by intrinsic type-II band alignment, while photoluminescence (PL) imaging shows that the interface acts as a recombination center that limits efficient carrier extraction. These results provide direct experimental evidence of type-II-driven charge separation in in-plane heterojunctions and offer critical insights for interface design in high-efficiency photocatalytic and optoelectronic systems.

electrical properties

Encapsulation of Ba in InSb Framework Introduces Chirality in Clathrate-Like BaIn 4 Sb 4

The discovery of Zintl compounds remains a powerful strategy for identifying materials with tunable electronic and thermal transport properties. During a concerted search for new inorganic clathrates with In–Sb frameworks, we discovered BaIn 4 Sb 4 . The composition of this phase deviates from that expected for a type-I clathrate with tetrahedral coordination of all In and Sb atoms (Ba 8 In 31 Sb 15 ). Instead, in the chiral structure of BaIn 4 Sb 4 (space group P 3 1 21, No. 152), a part of the In atoms have a trigonal planar coordination of 1In + 2Sb, forming Sb 2 –In–In–Sb 2 nonplanar fragments isostructural to diborane(4) B 2 H 4 with D 2 d symmetry. Ba atoms are located inside 16-vertex In 8 Sb 8 polyhedra, which share vertices and edges to form a chiral framework around the 3 1 screw axes. The title compound is electron-balanced, [Ba 2+ ][In 2+ ] 2 [In 3+ ] 2 [Sb3–] 4 , which was confirmed by characterization of the charge and heat transport properties. BaIn 4 Sb 4 exhibits a low thermal conductivity and high Seebeck coefficient, suggesting its untapped potential for thermoelectric applications. Finally, density functional theory (DFT) calculations indicate that chemical doping may enhance carrier concentration and improve the originally low electrical conductivity, thus enhancing thermoelectric performance.

electrical properties