Search NASA⌕ Search
Home/Archive/DOE OSTI

DOE OSTI · 2932693

Solid neon as a noise-resilient host for electron qubits above 100 mK

Li, Xinhao [Argonne National Laboratory (ANL), Argonne, IL (United States); Harvard Univ., Cambridge, MA (United States)] (ORCID:0000000206647775)·Wang, Christopher S. [Univ. of Chicago, IL (United States)]·Dizdar, Brennan [Univ. of Chicago, IL (United States)] (ORCID:0000000184259914)·Huang, Yizhong [Argonne National Laboratory (ANL), Argonne, IL (United States); Northeastern Univ., Boston, MA (United States)] (ORCID:0000000339098685)·Wen, Yutian [University of Notre Dame, IN (United States)] (ORCID:0000000234572571)·Guo, Wei [Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)] (ORCID:0000000294663213)·Zhang, Xufeng [Northeastern Univ., Boston, MA (United States)] (ORCID:0000000194924244)·Han, Xu [Argonne National Laboratory (ANL), Argonne, IL (United States); Univ. of Chicago, IL (United States)] (ORCID:0000000344670885)·Zhou, Xianjing [Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)] (ORCID:0000000201377921)·Jin, Dafei [Argonne National Laboratory (ANL), Argonne, IL (United States); University of Notre Dame, IN (United States)] (ORCID:0000000280353580)
View original source ↗Read source document ↗Export metadata ↓

Abstract

Solid neon can be used as a solid host for single-electron qubits. At temperatures of around 10 mK, electron-on-solid-neon charge qubits exhibit long coherence times and high operation fidelities. However, a systematic characterization of the noise features of such systems is needed for the development of scalable quantum information architectures. Here, in this work, we show that solid neon can be used as a noise-resilient host for electron qubits above 100 mK. We examine the resilience of solid neon against charge and thermal noise when electron-on-solid-neon charge qubits are operated away from the charge-insensitive sweet spot and at elevated temperatures. We show that the extracted high-frequency charge noise density of electron-on-solid-neon qubits, projected as voltage fluctuations on nearby electrodes, is between 10 −4 μV 2 Hz −1 and 10 −6 μV 2 Hz −1 at 0.01 MHz to 1 MHz, which is comparable to common semiconductor hosts. We also show that the electron-on-solid-neon charge qubits operating at frequencies of around 5 GHz can maintain echo coherence times of over 1 μs at temperatures up to 400 mK.

Explore related subjects

42 ENGINEERINGelectronic devicesquantum fluids and solidsquantum informationqubits

Keep this discovery

BibTeXRIS

Li, Xinhao [Argonne National Laboratory (ANL), Argonne, IL (United States); Harvard Univ., Cambridge, MA (United States)] (ORCID:0000000206647775), Wang, Christopher S. [Univ. of Chicago, IL (United States)], Dizdar, Brennan [Univ. of Chicago, IL (United States)] (ORCID:0000000184259914), Huang, Yizhong [Argonne National Laboratory (ANL), Argonne, IL (United States); Northeastern Univ., Boston, MA (United States)] (ORCID:0000000339098685), Wen, Yutian [University of Notre Dame, IN (United States)] (ORCID:0000000234572571), Guo, Wei [Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)] (ORCID:0000000294663213), Zhang, Xufeng [Northeastern Univ., Boston, MA (United States)] (ORCID:0000000194924244), Han, Xu [Argonne National Laboratory (ANL), Argonne, IL (United States); Univ. of Chicago, IL (United States)] (ORCID:0000000344670885), Zhou, Xianjing [Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)] (ORCID:0000000201377921), Jin, Dafei [Argonne National Laboratory (ANL), Argonne, IL (United States); University of Notre Dame, IN (United States)] (ORCID:0000000280353580). 2026-04-29. Solid neon as a noise-resilient host for electron qubits above 100 mK. https://doi.org/10.1038/s41928-026-01613-4

Cite the original work for its findings. Save a collection to share your selection of sources.

Discover connections

42 ENGINEERING subject

Connections use source metadata and explicit phrase matches, not verified experimental comparisons.

KEEP EXPLORING

Related discoveries

DOE OSTI2026

Fast Growth of Ga2O3 on Highly Offcut (100)-Oriented Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. More importantly, the impact ionization coefficients along the [100] direction are low, leading to the highest possible critical fields. This is advantageous compared to the current state of the art, (001), due to reduced surface defects and increased possible breakdown voltage. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption, and on-axis (100) growth easily forms twin domains. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction. These films show step-flow growth from (20-1) step-edges and high electron mobility due to suppressed twins. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (>5 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3 and critical breakdown field in Schottky barrier diodes comparable with state-of-the-art (001) Ga2O3 without edge termination.

36 MATERIALS SCIENCE↗
DOE OSTI1991

Pressure Safety Training (Rev. 8)

This is the workbook for the Pressure Safety Training Course. It is intended as a reference manual and guide for all work with pressurized liquids or gases. This workbook contains basic references to make work with pressure safer. It is intended to supplement classroom instruction, rather than serve as a definitive text on pressure. Earlier versions of the manual were intended specifically for training at Lawrence Livermore National Laboratory. This revision is a generic version intended for training at all DOE facilities. The information in the Standards chapter is from the LLNL Health and Safety Manual. It is included here as a convenient reference and guide for developing similar standards at your own facility.

42 ENGINEERING↗
DOE OSTI2024

A First-Principles Study of the Structural and Thermo-Mechanical Properties of Tungsten-Based Plasma-Facing Materials

Tungsten (W) and tungsten alloys are being considered as leading candidates for structural and functional materials in future fusion energy devices. The most attractive properties of tungsten for the design of magnetic and inertial fusion energy reactors are its high melting point, high thermal conductivity, low sputtering yield, and low long-term disposal radioactive footprint. Despite these relevant features, there is a lack of understanding of how the structural and mechanical properties of W-based alloys are affected by the temperature in fusion power plants. In this work, we present a study on the thermo-mechanical properties of five W-based plasma-facing materials. First-principles density functional theory (DFT) calculations are combined with the quasi-harmonic approximation (QHA) theory to investigate the electronic, structural, mechanical, and thermal properties of these W-based alloys as a function of temperature. The coefficient of thermal expansion, temperature-dependent elastic constants, and several elastic parameters, including bulk and Young’s modulus, are calculated. Our work advances the understanding of the structural and thermo-mechanical behavior of W-based materials, thus providing insights into the design and selection of candidate plasma-facing materials in fusion energy devices.

42 ENGINEERING↗