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DOE OSTI · 3005629

Diode effect for skyrmions interacting with linear protrusion defects

Bellizotti Souza, J. C. [Univ. of Campinas (UNICAMP), Sao Paulo (Brazil)] (ORCID:0000000181495575)·Reichhardt, Cynthia Jane O. [Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)] (ORCID:0000000234875089)·Reichhardt, Charles [Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)] (ORCID:000000020193189X)·Vizarim, N. P. [Univ. of Campinas (UNICAMP), Sao Paulo (Brazil)] (ORCID:000000022735615X)·Venegas, P. A. [São Paulo State University (UNESP), Bauru, SP (Brazil)] (ORCID:0000000258190957)
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Abstract

We simulate collectively interacting skyrmions in a channel with periodic asymmetry, and find a strong diode effect for the skyrmion flow. There is also an asymmetry in the skyrmion annihilation rate for currents applied along the hard or easy substrate asymmetry direction, with a higher annihilation rate for hard direction currents. We map out the diode efficiency as a function of magnetic field and substrate asymmetry angle. We also show that the Magnus force impacts the diode motion and annihilation rate asymmetry by forcing skyrmions into corners of the protrusion geometry.

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36 MATERIALS SCIENCEannihilationdiode effectsskyrmions

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Bellizotti Souza, J. C. [Univ. of Campinas (UNICAMP), Sao Paulo (Brazil)] (ORCID:0000000181495575), Reichhardt, Cynthia Jane O. [Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)] (ORCID:0000000234875089), Reichhardt, Charles [Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)] (ORCID:000000020193189X), Vizarim, N. P. [Univ. of Campinas (UNICAMP), Sao Paulo (Brazil)] (ORCID:000000022735615X), Venegas, P. A. [São Paulo State University (UNESP), Bauru, SP (Brazil)] (ORCID:0000000258190957). 2025-11-03. Diode effect for skyrmions interacting with linear protrusion defects. https://doi.org/10.1088/1367-2630%2Fae1637

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