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DOE OSTI · 3017209

Quantum criticality in coupled hybrid metal-semiconductor islands

Abstract

We show that the combined effects of a dynamical Coulomb blockade and integer quantum Hall effect in a coupled hybrid metal-semiconductor setup provide a pathway for realizing resonant tunneling in Luttinger liquids. This hybrid setup can be brought to the quantum critical regime by varying gate voltages and contact resistances. We explore the nature of quantum criticality, Kondo effect, charge fractionalization, and transport in such a hybrid setup, and verify their robust non-Fermi-liquid behaviors. In conclusion, our work opens a promising route for quantum simulating exotic zero-temperature quantum critical phenomena associated with Luttinger-liquid physics in a nanoengineered electronic circuit with well-defined quantum Hall channels.

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BibTeXRIS

Karki, D. B. [Argonne National Laboratory (ANL), Argonne, IL (United States)]. 2024-12-13. Quantum criticality in coupled hybrid metal-semiconductor islands. https://doi.org/10.1103/physrevb.110.l241406

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