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DOE OSTI · 3019031

Characterization of ECRAM materials and devices

Wang, Jolie NMN·Fuller, Elliot James·Gross, Adam·Salagre Rubio, Elena·Crandall, Patrick Kelly
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Abstract

As the limits of Moore’s Law approaches, new computing paradigms are developing to breakthrough this bottleneck. One such computer architecture is neuromorphic computing, which models the brain. Electrochemical random-access memory (ECRAM) is a low power and energy efficient memory due to characteristics, such as in-memory compute, ion modulation of the channel conductance, and computation distribution with large scale array integration.

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97 MATHEMATICS AND COMPUTING

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Wang, Jolie NMN, Fuller, Elliot James, Gross, Adam, Salagre Rubio, Elena, Crandall, Patrick Kelly. 2024-08-01. Characterization of ECRAM materials and devices. https://doi.org/10.2172/3019031

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