DOE OSTI · 3028471
Efficient and Robust p-Type Transistor Based on Ultrawide-Bandgap Semiconductor
Abstract
The p-type transistor is an indispensable component of semiconductor technology, enabling a complementary operation with n-channel transistors for computation, storage, and communication. Achieving both high robustness and high efficiency is highly desirable but challenging for p-type transistors due to the limited semiconductors with reliable hole transport and their high activation energies. Here, in this study, we achieved a robust yet efficient p-type transistor by heterogeneously integrating an ultrawide-bandgap semiconductor and a high-κ dielectric layer through van der Waals integration. The p-type transistor employs a two-dimensional hole channel on hydrogenated diamond (bandgap 5.6 eV) combined with a high-κ (30.5) SrTiO 3 perovskite membrane. At room temperature, the transistor exhibits stable operation with a high on-current (∼200 mA/mm), low subthreshold swing (70 mV/dec), high hole mobility (566 cm 2 /(V·s) to 572 cm 2 /(V·s)), and high on–off ratio (∼10 9 ). Furthermore, tuning the annealing temperature allows operation in either enhancement or depletion mode. The robust p-type transistor with high efficiency holds great potential for future power electronics, ultraviolet (UV) optoelectronics, and harsh-environment electronic applications.
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Xing, Kaijian [Macau University of Science and Technology, Zhuhai (China); Monash University, Melbourne, VIC (Australia)] (ORCID:0000000152544710), Yang, Zherui [Nanyang Technological University (Singapore)], Zhao, Weiyao [Monash University, Melbourne, VIC (Australia)] (ORCID:0000000227516109), Yin, Yuefeng [Monash University, Melbourne, VIC (Australia)] (ORCID:0000000229581887), Han, Huiping [Kunming University of Science and Technology (China)], Wang, Shanhu [Kunming University of Science and Technology (China)], Wang, Shifan [University of Melbourne, VIC (Australia)] (ORCID:0000000298661434), Bullock, James [University of Melbourne, VIC (Australia)] (ORCID:0000000179039642), Stacey, Alastair [Royal Melbourne Institute of Technology (RMIT) University, VIC (Australia); Princeton Plasma Physics Laboratory (PPPL), Princeton, NJ (United States)], Belcourt, James A. [Royal Melbourne Institute of Technology (RMIT) University, VIC (Australia)], Rubanov, Sergey [University of Melbourne, VIC (Australia)] (ORCID:000000027191856X), Yin, Hang [Australian National University, Canberra, ACT (Australia)] (ORCID:000000022898844X), Broadway, David A. [Royal Melbourne Institute of Technology (RMIT) University, VIC (Australia)] (ORCID:0000000273758766), Tetienne, Jean-Philippe [Royal Melbourne Institute of Technology (RMIT) University, VIC (Australia)] (ORCID:0000000157962508), Yin, Xinmao [Shanghai University (China)] (ORCID:0000000282464444), Wu, Liang [Kunming University of Science and Technology (China)] (ORCID:0000000310306997), Qi, Dong-Chen [Queensland University of Technology, Brisbane, QLD (Australia)] (ORCID:0000000184660257), Fuhrer, Michael S. [Monash University, Melbourne, VIC (Australia)] (ORCID:0000000161832773), Ou, Qingdong [Macau University of Science and Technology, Zhuhai (China); Macau University of Science and Technology (China)] (ORCID:0000000321612543), Renshaw Wang, Xiao [Nanyang Technological University (Singapore)] (ORCID:0000000255039899). 2026-02-17. Efficient and Robust p-Type Transistor Based on Ultrawide-Bandgap Semiconductor. https://doi.org/10.1021/acsnano.5c22605
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