DOE OSTI · 3029307
Bistable Optical Semiconductor Switching Based on C-Doped GaN
Abstract
Highly resistive gallium nitride (GaN) is an essential material for power optoelectronic applications. While carbon doping is widely used to achieve semi-insulating properties in GaN, the persistent photoconductivity (PPC) arising from deep-level defect traps remains a major obstacle for high-speed power switching. This study demonstrates a novel approach: leveraging the ultrahigh photoresponsivity of GaN:C (up to 2.1 A ⋅ cm/W ⋅ kV, surpassing alternatives such as GaN:Fe) and employing defect-selective optical control to effectively quench the PPC. By synchronizing a short infrared (1064 nm) quenching pulse with UV (385 nm) excitation in an epitaxially grown GaN:C layer on a heavily doped n-type GaN substrate, we achieve a dramatic reduction in photocurrent fall time by approximately 293× (from 470 to 1.6 μ s), increasing modulation bandwidth from 745 Hz to nearly 218 kHz. Here, this advancement not only establishes a new pathway for controlling PPC in GaN:C but also enables the practical integration of GaN:C in fast power switching devices. Enhanced modulation bandwidth, along with GaN:C excellent photoresponsivity, makes it a promising candidate for optically controlled high-voltage, high-power electronic systems, such as photoconductive semiconductor switches (PCSSs) used in pulsed-power drivers, high-power microwave (HPM) sources, and high-voltage gate drivers for wide bandgap (WBG) power electronics.
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Ghandiparsi, Soroush [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)] (ORCID:0000000178034583), Shao, Qinghui [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)] (ORCID:0000000219949553), Chapin, Caitlin A. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)] (ORCID:0000000273171826), Leos, Laura [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)] (ORCID:0000000211389598), Schneider, Joseph D. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)] (ORCID:0000000176689201), Wagner, Samuel M. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)] (ORCID:0000000279447918), Chapman, Steven F. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)], Frye, Clint D. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)], Harrison, Sara E. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)] (ORCID:0000000232523338), Varley, Joel B. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)] (ORCID:0000000253845248), Voss, Lars F. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)] (ORCID:0000000263498219). 2026-03-06. Bistable Optical Semiconductor Switching Based on C-Doped GaN. https://doi.org/10.1109/ted.2026.3668213
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