DOE OSTI · 3364742
Dual-ion ECRAM as a stable and accurate analog synapse
Abstract
Electrochemical random-access memory (ECRAM) works by tuning the bulk electronic conductance of functional materials via reversible, electrochemical insertion of ions, resulting in stable analog resistive switching, attractive for analog in-memory and neuromorphic computing. However, achieving fast programming for training and long retention for inference has been elusive. Protonic ECRAM demonstrates fast programming but insufficient retention, while oxygen-based ECRAM with excellent retention requires elevated programming temperatures. Cu-based ECRAM offers a compromise, with an activation energy (E A ) of ≈0.76 eV between protons (E A ≈ 0.4 eV) and oxygen (E A > 1 eV), enabling extensive retention and room temperature programming. Combining Cu 2+ ions with protons to form a dual-ion ECRAM, we demonstrate two distinct switching behaviors: fast switching at ≤5 V, (E A ≈ 0.45 eV) via protons, and nonvolatile, room temperature switching at ≥8 V, with E A ≈ 0.76 eV via Cu 2+ ions. In conclusion, the Cu-based state exhibits a wide conductance range, with excellent retention, low noise, and linear current-voltage behavior, achieving digital-equivalent ImageNet inference accuracy.
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Resalat Faruque, Hossain Mansur [Arizona State Univ., Tempe, AZ (United States)], Islam, Md Aminul [Arizona State Univ., Tempe, AZ (United States)], Voegtle, Matthew J. [The Aerospace Corporation, El Segundo, CA (United States)], Holtzman, Natan [The Aerospace Corporation, El Segundo, CA (United States)], Bae, In-Tae [The Aerospace Corporation, El Segundo, CA (United States)], Swain, Smitha S. [Arizona State Univ., Tempe, AZ (United States)], Beom, Keonwon [Arizona State Univ., Tempe, AZ (United States)], Dempsey, Ryan C. [Arizona State Univ., Tempe, AZ (United States)], Smith, C. Jennie [Arizona State Univ., Tempe, AZ (United States)], Xiao, T. Patrick [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)], Bennett, Christopher H. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)], Agarwal, Sapan [Sandia National Laboratories (SNL-CA), Livermore, CA (United States)], Kozicki, Michael N. [Arizona State Univ., Tempe, AZ (United States)], Talin, Albert Alec [Sandia National Laboratories (SNL-CA), Livermore, CA (United States)] (ORCID:000000021102680X), Marinella, Matthew J. [Arizona State Univ., Tempe, AZ (United States)] (ORCID:0000000265371836). 2025-09-12. Dual-ion ECRAM as a stable and accurate analog synapse. https://doi.org/10.1016/j.device.2025.100928
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