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At least 181 records · Page 10

Optical and structural characterization of InAs/GaAs quantum wells

Three InAs/GaAs single quantum wells of two-, three-, and four-monolayer thickness were characterized using optical and structural techniques. The results of high-resolution transmission electron (HRTEM) microscopy and optical studies which combine absorption, photoluminescence (PL), photoreflectance, and cathodoluminescence are presented. Using the polarization modulated absorptance technique, we observed two absorption features in our samples at 77 K. On the basis of their polarization properties and comparison with an envelope function calculation, these structures are assigned to transitions between the confined heavy-hole and confined and unconfined electron levels. Photoreflectance spectra of the three-monolayer sample in 77-300 K range show only the fundamental quantum well transition. The temperature dependence of this transition is approximately linear with a slope of 2.2 x 10 exp -4 eV/K, which is significantly lower than in both constituent materials. Comparison to the absorption data reveals that the PL spectra are affected by the carrier diffusion and therefore do not provide direct measure of the exciton density of states. The HRTEM images indicate that, while the interfaces of the two-monolayer sample are smooth and the well thickness is uniform, the four-monolayer sample has uneven interfaces and contains domains of two, three, and four monolayers.

Ksendzov, A.↗

Investigation of ZnSe-coated silicon substrates for GaAs solar cells

Studies are being carried out to determine the feasibility of using ZnSe as a buffer layer for GaAs solar cells grown on silicon. This study was motivated by reports in the literature indicating ZnSe films had been grown by metallorganic chemical vapor deposition (MOCVD) onto silicon with EPD values of 2 x 10(exp 5) cm(sup -2), even though the lattice mismatch between silicon and ZnSe is 4.16 percent. These results combined with the fact that ZnSe and GaAs are lattice matched to within 0.24 percent suggest that the prospects for growing high efficiency GaAs solar cells onto ZnSe-coated silicon are very good. Work to date has emphasized development of procedures for MOCVD growth of (100) ZnSe onto (100) silicon wafers, and subsequent growth of GaAs films on ZnSe/Si substrates. In order to grow high quality single crystal GaAs with a (100) orientation, which is desirable for solar cells, one must grow single crystal (100) ZnSe onto silicon substrates. A process for growth of (100) ZnSe was developed involving a two-step growth procedure at 450 C. Single crystal, (100) GaAs films were grown onto the (100) ZnSe/Si substrates at 610 C that are adherent and specular. Minority carrier diffusion lengths for the GaAs films grown on ZnSe/Si substrates were determined from photoresponse properties of Al/GaAs Schottky barriers. Diffusion lengths for n-type GaAs films are currently on the order of 0.3 microns compared to 2.0 microns for films grown simultaneously by homoepitaxy.

Huber, Daniel A.↗

Carrier recombination and diffusion in high-purity diamond after electron irradiation and annealing

Carrier-transport mechanisms are studied in high-purity diamond irradiated with 6 MeV electrons in the dose range of 10 12 –10 16 cm -2 and annealed at different temperatures up to 1450°C. Lifetimes and diffusion coefficients are extracted using two pump–probe techniques based on free-carrier absorption and transient-grating principles and then correlated with the corresponding defect evolution from spectroscopic measurements. Furthermore, the neutral monovacancy is revealed as the main carrier recombination center in the as-irradiated diamond, providing bipolar carrier lifetimes of a few nanoseconds at the highest irradiation dose. Carrier-capture cross sections are reduced during annealing as vacancies aggregate into divacancies at ≤1000°C and extended vacancy clusters at 1450°C.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Are aromatic hydrocarbons the carriers of the diffuse interstellar bands in the visible?

Large Polycyclic Aromatic Hydrocarbons (PAH) are the likely origin of the Unidentified Infrared Emission Feature. The molecules or their ions are also attractive candidates for the carriers of the Diffuse Interstellar Bands (DIBs) in the visible range. The PAHs have optically active transitions in the visible spectrum; have the ability to survive the ultraviolet photons in the Diffuse Interstellar Medium; and are the most abundant among the detected molecular species after H2 and CO. In particular, PAHs are better candidates than the long carbon chains that were proposed previously.

Leger, A.↗

Method and apparatus for measuring minority carrier lifetimes and bulk diffusion length in P-N junction solar cells

Carrier lifetimes and bulk diffusion length are qualitatively measured as a means for qualification of a P-N junction photovoltaic solar cell. High frequency (blue) monochromatic light pulses and low-frequency (red) monochromatic light pulses were alternately applied to the cell while it was irradiated by light from a solar simulator, and synchronously displaying the derivative of the output voltage of the cell on an oscilloscope. The output voltage is a measure of the lifetimes of the minority carriers (holes) in the diffused N layer and majority carriers (electrons) in the bulk P material, and of the diffusion length of the bulk silicon. By connecting a reference cell in this manner with a test cell to be tested in reverse parallel, the display of a test cell that matches the reference cell will be a substantially zero output.

Vonroos, O. H.↗

Mathematical analysis of the Photovoltage Decay (PVD) method for minority carrier lifetime measurements

When the diffusion length of minority carriers becomes comparable with or larger than the thickness of a p-n junction solar cell, the characteristic decay of the photon-generated voltage results from a mixture of contributions with different time constants. The minority carrier recombination lifetime tau and the time constant l(2)/D, where l is essentially the thickness of the cell and D the minority carrier diffusion length, determine the signal as a function of time. It is shown that for ordinary solar cells (n(+)-p junctions), particularly when the diffusion length L of the minority carriers is larger than the cell thickness l, the excess carrier density decays according to exp (-t/tau-pi(2)Dt/4l(2)), tau being the lifetime. Therefore, tau can be readily determined by the photovoltage decay method once D and L are known.

Vonroos, O. H.↗

Increased light-emission efficiency in disordered (In, Ga)N through the correlated reduction of recombination rates

Experiments have shown that the light-emission efficiency of indium gallium nitride (InGaN) lightemitting diodes improves with increasing indium concentration. It is widely thought that compositional fluctuations due to indium incorporation suppress diffusion of carriers to non-radiative centers, thus leading to defect-insensitive emission. However, recent experiments have challenged this hypothesis by revealing unexpectedly long diffusion lengths at room temperature. Here, we demonstrate an alternative mechanism involving the correlated reduction in radiative and nonradiative recombination rates that explains the increase in light-emission efficiency of InGaN with increasing indium concentration, without invoking the suppression of carrier diffusion. Furthermore, our analysis challenges the notion that carrier localization gives rise to defect tolerance in InGaN.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Surface recombination velocity and diffusion length of minority carriers in heavily doped silicon layers

Quantitative analysis of the electron beam-induced current and the dependence of the effective diffusion length of the minority carriers on the penetration depth of the electron beam were employed for the analysis of the carrier recombination characteristics in heavily doped silicon layers. The analysis is based on the concept of the effective excitation strength of the carriers which takes into consideration all possible recombination sources. Two dimensional mapping of the surface recombination velocity of P-diffused Si layers will be presented together with a three dimensional mapping of minority carrier lifetime in ion implanted Si. Layers heavily doped with As exhibit improved recombination characteristics as compared to those of the layers doped with P.

Gatos, H. C.↗

Experimental investigation of the excess charge and time constant of minority carriers in the thin diffused layer of 0.1 ohm-cm silicon solar cells

An experimental method is presented that can be used to interpret the relative roles of bandgap narrowing and recombination processes in the diffused layer. This method involves measuring the device time constant by open-circuit voltage decay and the base region diffusion length by X-ray excitation. A unique illuminated diode method is used to obtain the diode saturation current. These data are interpreted using a simple model to determine individually the minority carrier lifetime and the excess charge. These parameters are then used to infer the relative importance of bandgap narrowing and recombination processes in the diffused layer.

Godlewski, M. P.↗

Experimental investigation of the excess charge and time constant of minority carriers in the thin diffused layer of 0.1 Ohm-cm silicon solar cells

The observed low open-circuit voltage in 0.1 Ohm-cm solar cells is probably related to an excessively high diode saturation current. Theoretical studies conducted by Lindholm et al. (1975) and by Godlewski et al. (1975) have shown that a high saturation current could be produced by either high recombination rates or bandgap narrowing effects. A description is given of an investigation which shows that bandgap narrowing effects have a first order significance in determining the charge carrier transport controlling the open-circuit voltage of 0.1 Ohm-cm silicon solar cells.

Godlewski, M. P.↗

Imaging Carrier Dynamics and Transport in Hybrid Perovskites with Transient Absorption Microscopy

In this review, the recent progress in using transient absorption microscopy to image charge transport and dynamics in semiconducting hybrid organic–inorganic perovskites is discussed. The basic principles, instrumentation, and resolution of transient absorption microscopy are outlined. With temporal resolution as high as 10 fs, sub-diffraction-limit spatial resolution, and excited-state structural resolution, these experiments have provided crucial details on charge transport mechanisms that have been previously obscured in conventional ultrafast spectroscopy measurements. Morphology-dependent mapping unveils spatial heterogeneity in carrier recombination and cooling dynamics. By spatially separating the pump and probe beams, carrier transport across grain boundaries has been directly visualized. Further, femtosecond temporal resolution allows for the examination of nonequilibrium transport directly, revealing extraordinarily long-range hot carrier migration. The application of transient absorption microscopy is not limited to hybrid perovskites but can also be useful for other polycrystalline materials in which morphology plays an important role in carrier transport.

36 MATERIALS SCIENCE↗

Computational Evaluation of Carriers in Facilitated Transport Membranes for Postcombustion Carbon Capture

Incorporating molecular amines as mobile carriers in facilitated transport membranes (FTMs) has been demonstrated to significantly enhance the CO 2 permeance and CO 2 /N 2 selectivity of the membrane for CO 2 capture from flue gas. In this study, by employing computational techniques including density functional theory calculations and molecular simulations, the role of mobile carriers has been systematically studied at a molecular level from the perspectives of the amine–CO 2 reaction chemistry, diffusivities of carriers and gases, and N 2 solubility. The latter two properties were also investigated as a function of water uptake. The water uptake values of FTMs were experimentally quantified too. The introduction of mobile carriers was shown to substantially enhance the diffusivities of CO 2 reaction products compared to FTMs without mobile carriers. The choice of mobile carriers was also demonstrated to influence the separation performance. Computationally, 2-(1-piperazinyl)ethylamine sarcosinate (PZEA-Sar) exhibited a faster reaction kinetics and slightly higher CO 2 absorption capacity as compared to piperazine glycinate (PZ-Gly). Experimentally, the FTM incorporating PZEA-Sar mobile carriers also showed a higher CO 2 permeance. The good agreement validated the computational models employed and insights generated in this study. In conclusion, the outcomes of this work shed light on the future design and selection of carrier structures, and the adopted computational approaches can be employed to discover promising mobile carrier candidates.

20 FOSSIL-FUELED POWER PLANTS↗

Sodium diffusion in heterogeneous porous media: Connecting laboratory experiments and simulations

Sodium has been suggested as a tracer for brine in reservoir formations where a significant amount of sodium ion is found mainly in the aqueous phase. Fortunately, the most abundant sodium isotope, 23 Na, is Nuclear Magnetic Resonance (NMR) active, making it possible to study the structure and dynamical properties of both bulk and pore confined fluid systems. We investigated the diffusion of key dissolved sodium species in bulk solution and porous media as a function of composition, ionic strength, and permeability of the carbonate samples using NMR relaxometry and pulsed-field gradient (PFG) NMR techniques. We use Indiana limestone as an example of natural porous media and water as a freely diffusible tracer and carrier. We demonstrate apparent diffusion measurement of sodium based on changes in spin–spin relaxation time (T 2 ) signal in pore confinement. The diffusion rate of sodium decreases with increasing counter-ion size. This effect is greater at higher ionic strengths and lower chemical potentials in porous media. The reactive transport code, CrunchFlow, was used to complement the NMR experiments to simulate diffusion behavior in porous media. Combining these two methods provides a powerful approach to estimating effective diffusion coefficients in heterogeneous matrices. The modeling considers the influence of physical properties (porosity and tortuosity) and chemical properties (geochemical composition and chemical gradients). The results presented in this work highlight the advantage of measuring apparent diffusivity using NMR T 2 relaxometry in conjunction with numerical simulation to derive effective diffusivity and the corresponding matrix properties (i.e., tortuosity) of the system.

58 GEOSCIENCES↗

Plastocyanin is the long-range electron carrier between photosystem II and photosystem I in plants

In photosynthetic electron transport, large multiprotein complexes are connected by small diffusible electron carriers, the mobility of which is challenged by macromolecular crowding. For thylakoid membranes of higher plants, a long-standing question has been which of the two mobile electron carriers, plastoquinone or plastocyanin, mediates electron transport from stacked grana thylakoids where photosystem II (PSII) is localized to distant unstacked regions of the thylakoids that harbor PSI. Here, we confirm that plastocyanin is the long-range electron carrier by employing mutants with different grana diameters. Furthermore, our results explain why higher plants have a narrow range of grana diameters since a larger diffusion distance for plastocyanin would jeopardize the efficiency of electron transport. In the light of recent findings that the lumen of thylakoids, which forms the diffusion space of plastocyanin, undergoes dynamic swelling/shrinkage, this study demonstrates that plastocyanin diffusion is a crucial regulatory element of plant photosynthetic electron transport.

plastoquinone↗

Facilitated transport membrane with functionalized ionic liquid carriers for CO 2 /N 2 , CO 2 /O 2 , and CO 2 /air separations

CO 2 separations from cabin air and the atmospheric air are challenged by the very low partial pressures of CO 2 . In this study, a facilitated transport membrane (FTM) is developed to separate CO 2 from air using functionalized ionic liquid (IL) and poly(ionic liquid) (PIL) carriers. A highly permeable bicontinuous structured poly(ethersulfone)/poly(ethylene terephthalate) ( b PES/PET) substrate is used to support the PIL–IL impregnated graphene oxide thin film. The CO 2 separation performance was tested under a mixture feed of CO 2 /N 2 /O 2 /H 2 O. Under 410 ppm of CO 2 at 1 atm feed gas, CO 2 permanence of 3923 GPU, and CO 2 /N 2 and CO 2 /O 2 selectivities of 1200 and 300, respectively, are achieved with helium sweeping on the permeate side. For increased transmembrane pressure (>0 atm), a thicker PIL–IL/GO layer was shown to provide mechanical strength and prevent leaching of the mobile carrier. CO 2 binding to the carriers, ion diffusivities, and the glass transition temperature of the PIL–IL gels were examined to determine the membrane composition and rationalize the superior separation performance obtained. This report represents the first FTM study with PIL–IL carriers for CO 2 separation from air.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗