Gunn domain dynamics.
Carrier motion equation in Gunn diode in terms of average drift velocity and diffusion coefficient
DIFFUSION COEFFICIENT↗
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Encapsulated diffusion of sulphur into InP
This talk outlines a simple process for the fabrication of n(+)-p solar cells in indium phosphide. Large area cells (greater than 0.25 sq cm) have been made by this process, with a photovoltaic conversion efficiency of 15.21 percent under AM0 conditions of illumination. An ideality factor of 1.1 and a saturation current density of 8 x 10 to the minus 15th power A/sq cm have been observed for these cells. The technique for cell fabrication involves the diffusion of sulfur into InP by an open tube process, and gives highly reproducible results from run to run. A vacuum-deposited layer of gallium sulphide (Ga2S3) was used as the source for sulfur diffusion, with a chemically vapor deposited SiO2 cap layer to prevent decomposition of the InP surface during heat treatment. Diffusions were carried out in a flowing nitrogen ambient at 585 to 708 C, and characterized by their surface carrier concentration and the diffusion constant. The diffusion profile for sulfur in InP is estimated to be of the complementary error function type. The activation energy of the diffusion was estimated to be 1.94 eV. The technique described here is ideally suited for the fabrication of shallow n(+)-p junctions in InP, and has been used for space-borne solar cells.
Parat, K. K.↗
Determination of lifetimes and recombination currents in p-n junction solar cells, diodes, and transistors
New methods are presented and illustrated that enable the accurate determination of the diffusion length of minority carriers in the narrow regions of a solar cell or a diode. Other methods now available are inaccurate for the desired case in which the width of the region is less than the diffusion length. Once the diffusion length is determined by the new methods, this result can be combined with measured dark I-V characteristics and with small-signal admittance characteristics to enable determination of the recombination currents in each quasi-neutral region of the cell - for example, in the emitter, low-doped base, and high-doped base regions of the BSF (back-surface-field) cell. This approach leads to values for the effective surface recombination velocity of the high-low junction forming the back-surface field of BSF cells or the high-low emitter junction of HLE cells. These methods are also applicable for measuring the minority-carrier lifetime in thin epitaxial layers grown on substrates with opposite conductivity type.
Neugroschel, A.↗
The effect of diffusion induced lattice stress on the open-circuit voltage in silicon solar cells
It is demonstrated that diffusion induced stresses in low resistivity silicon solar cells can significantly reduce both the open-circuit voltage and collection efficiency. The degradation mechanism involves stress induced changes in both the minority carrier mobility and the diffusion length. Thermal recovery characteristics indicate that the stresses are relieved at higher temperatures by divacancy flow (silicon self diffusion). The level of residual stress in as-fabricated cells was found to be negligible in the cells tested.
Weizer, V. G.↗
The effect of diffusion induced lattice stress on the open-circuit voltage in silicon solar cells
It is demonstrated that diffusion induced stresses in low resistivity silicon solar cells can significantly reduce both the open-circuit voltage and collection efficiency. The degradation mechanism involves stress induced changes in both the minority carrier mobility and the diffusion length. Thermal recovery characteristics indicate that the stresses are relieved at higher temperatures by divacancy flow (silicon self diffusion). The level of residual stress in as-fabricated cells was found to be negligible in the cells tested.
Weizer, V. G.↗
Analysis of the interaction of an electron beam with a solar cell. III - The effect of spacial variations of the number density of recombination centers on SEM measurements
By means of an exactly soluble model the short circuit current generated by a scanning electron microscope in a P-N junction has been determined in cases where the trap density is inhomogeneous. The diffusion length for minority carriers becomes then dependent on the spacial coordinates. It is shown that in this case the dependence of the Isc on characteristic parameters as cell thickness, distance of the beam excitation spot from ohmic contacts, etc., becomes very intricate. This fact precludes the determination of the local diffusion length in the usual manner. Although the model is somewhat simplified in order to make it amenable to exact solutions, it is nevertheless realistic enough to lead to the conclusion that SEM measurements of bulk transport parameters in inhomogeneous semiconductor material are impractical since they may lead to serious errors in the interpretation of the data by customary means.
Von Roos, O.↗
The Diffuse Interstellar Bands: Contributed papers
Drawing a coherent picture of the observational characteristics of the Diffuse Interstellar Bands (DIB's) and the physical and chemical properties of its proposed carriers was the focus of this NASA sponsored conference. Information relating to absoption spectra, diffuse radiation carriers, carbon compounds, stellar composition, and interstellar extinction involving T-Tauri stars, Reflection Nebulae, Red Giants, and accretion discs are discussed from those papers presented at the conference, which are included in this analytic.
Tielens, Alexander G. G. M.↗
Collection Of Charge By Diffusion From Ion Track
Collection of electric charge carriers from track of energetic ion through silicon electronic device studied using diffusion model representing transport of charge from ion track to sink. Effects of ionizing radiation approximated by simple equations.
Edmonds, Larry D.↗
Mechanisms for the effects of electric and magnetic fields on biological systems Semiannual status report, Jun. - Dec. 1967
Charge carrier transport, viscosity, and diffusion in liquid crystals to determine effect of weak electric and magnetic fields on biological systems
Kusabayashi, S.↗
Radiation effects in silicon solar cells Quarterly report
Radiation effects on minority carrier lifetime in lithium diffused n-type silicon
Berger, R. A.↗
The drift field model applied to the lithium-containing silicon solar cell
The drift field model used by Wolf to calculate the short-circuit current was extended to permit calculations of the open-circuit voltage and the maximum power under conditions of illumination of either tungsten (2800 C) source or AMO sunlight. Voltages were calculated using an expression for the drift field diode saturation current derived here. The model, applied to the oxygen rich (C-13 group) lithium solar cells, was used to calculate the pre-and post-electron bombardment trends for lithium gradients in the range of 10 to the 18th power to 10 to the 19th power Li/cm to the 4th power. Published experimental data characterizing these cells were used to tailor the model. The calculated trends are in reasonable agreement with the empirical data of Faith. Diffusion length degradation and carrier removal effects were sufficient to predict the cell performance up to 3 x 10 to the 14th power e/sq cm. Beyond this fluence it was necessary to include drift field removal effects.
Godlewski, M. P.↗
The drift field model applied to the lithium-containing silicon solar cell
The drift field model used by Wolf (1963) to calculate the short-circuit current was extended to permit calculations of the open-circuit voltage and the maximum power under conditions of illumination of either tungsten (2800 C) source or air mass zero sunlight. Voltages were calculated using an expression for the drift field diode saturation current. The model, applied to the oxygen-rich (C-13 group) lithium solar cells, was used to calculate the pre- and post-electron bombardment trends of the open-circuit voltage, maximum power, and short-circuit current for lithium gradients in the range from 10 to the 18th power to 10 to the 19th power Li/cm to the 4th power. Diffusion length degradation and carrier removal effects were sufficient to predict the cell performance up to 3 x 10 to the 14th electrons per sq cm. Beyond this fluence it was necessary to include drift field removal effects.
Godlewski, M. P.↗
A theoretical study of the effects of interacting grain boundaries on electron-beam-induced currents
The influence of several grain boundaries on the electron-beam-induced current in polycrystalline silicon is investigated. The simple geometry contemplated here, consisting of two plane parallel grain boundaries possessing different effective, albeit constant, surface recombination velocities, intersecting a planar junction at right angles allows for an exact solution of the corresponding boundary value problem. It is shown that if the distance between the grain boundaries w becomes less than the diffusion length for minority carriers L within the grain, the grain boundary with the smaller effective recombination velocity becomes less and less visible the smaller the ratio w/L.
Luke, K. L.↗
Gas release and ordering of carbon in the Allende meteorite
An attempt is made to ascertain whether the inert gas atoms leave their carrier phases by volume diffusion, with intact internal phase frameworks, or are instead expelled from the solids as a results of substantial rearrangement, during release from samples of the Allende carbonaceous meteorite. Gas release over the 300-1100 C range was followed by Raman spectroscopic studies in the 1360 and 1580/cm wavelength bands of carbon. The results obtained indicate that the gas release at high temperatures is causally related to the ordering of carbon.
Heymann, D.↗
On the two-dimensional modelling of horizontal CVD reactors and its limitations
In order to clarify under what conditions two-dimensional theoretical models can realistically account for the actual growth rate distribution in horizontal CVD reactors, a systematic numerical study was performed, and the results were compared with published experimental data for the MOCVD of gallium arsenide. Three models of increasing complexity were studied. It is shown that two-dimensional models can produce realistic predictions only for reactors with large width-to-height (aspect) ratios, that are operated at subcritical Rayleigh number,i.e., under dominant forced flow conditions. But even then, depending on the carrier gas, thermal (Soret) diffusion must be included in the model. Furthermore, velocity corrections for finite aspect ratios must be made, and buoyancy effects can be significant in the entrance region. On the other hand, the results are relatively insensitive to axial diffusion, temperature dependence of transport properties (versus averaged properties), and an assumed Poiseuille velocity profile (versus a rigorous solution of the velocity field). Yet, boundary layer approximations are prone to give unrealistic results at the low Reynolds numbers typical for CVD operations.
Ouazzani, Jalil↗
Response of a DRAM to single-ion tracks of different heavy-ion species and stopping powers
Multiple-bit errors caused by single-ion tracks in a 256-kb DRAM fabricated by a bulk process were observed for different ion species and stopping power values. The results demonstrate the utility of this device for the evaluation of ion-beam uniformity and ion-beam-induced charge collection in IC devices. The data indicate that single-ion-induced charge transport results in multiple-bit error clusters due to lateral diffusion of excess minority carriers (electrons). Charge collection occurred from a depth of up to 35 microns from the surface of the device. An apparent charge loss was observed for very heavy ions with a high stopping power (Au at 350 MeV).
Zoutendyk, J. A.↗
Fifteen Years of Laboratory Astrophysics at Ames
Tremendous strides have been made in our understanding of interstellar material over the past fifteen years thanks to significant, parallel developments in two closely related areas: observational astronomy and laboratory astrophysics. Fifteen years ago the composition of interstellar dust was largely guessed at, the concept of ices in dense molecular clouds ignored, and the notion of large, abundant, gas phase, carbon-rich molecules widespread throughout the interstellar medium (ISM) considered impossible. Today the composition of dust in the diffuse ISM is reasonably well constrained to cold refractory materials comprised of amorphous and crystalline silicates mixed with an amorphous carbonaceous material containing aromatic structural units and short, branched aliphatic chains. In the dense ISM, these cold dust particles are coated with mixed-molecular ices whose compositions are very well known. Lastly, the signature of carbon-rich polycyclic aromatic hydrocarbons (PAHs), shockingly large molecules by early interstellar chemistry standards, is widespread throughout the ISM. This great progress has only been made possible by the close collaboration of laboratory experimentalists with observers and theoreticians, all with the goal of applying their skills to astrophysical problems of direct interest to NASA programs. Such highly interdisciplinary collaborations ensure fundamental, in depth coverage of the wide-ranging challenges posed by astrophysics. These challenges include designing astrophysically focused experiments and data analysis, tightly coupled with astrophysical searches spanning 2 orders of magnitude in wavelength, and detailed theoretical modeling. The impact of our laboratory has been particularly effective as there is constant cross-talk and feedback between quantum theorists; theoretical astrophysicists and chemists; experimental physicists; organic, physical and petroleum chemists; and infrared and UV/Vis astronomers. In this paper, two examples of the Ames Program will be given. We have been involved in identifying 9 out of the 14 interstellar pre-cometary ice species known, determined their abundances and the physical nature of the ice structure. Details on our ice work are given in the paper by Sandford et al. Our group is among the pioneers of the PAH model. We built the theoretical framework, participated in the observations and developed the experimental techniques needed to test the model. We demonstrated that the ubiquitous infrared emission spectrum associated with many interstellar objects can be matched by laboratory spectra of neutral and positively charged PAHs and that PAHs were excellent candidates for the diffuse interstellar band (DIB) carriers. See Salama et al. and Hudgins et al.
Allamandola, L. J.↗
Gas Phase Spectroscopy of Cold PAH Ions: Contribution to the Interstellar Extinction and the Diffuse Interstellar Bands
Polycyclic Aromatic Hydrocarbon molecules (PAHs) are ubiquitous in the interstellar medium (ISM) and constitute the building blocks of interstellar dust grains. Despite their inferred important role in mediating the energetic and chemical processes in thc ISM, their exact contribution to the interstellar extinction, and in particular to the diffuse interstellar bands (DIBs) remains unclear. The DIBs are spectral absorption features observed in the line of sight of stars that are obscured by diffuse interstellar clouds. More than 200 bands have been reported to date spanning from the near UV to the near IR with bandwidths ranging from 0.4 to 40 Angstroms (Tielens & Snow 1995). The present consensus is that the DIBs arise from free flying, gas-phase, organic molecules and/or ions that are abundant under the typical conditions reigning in the diffuse ISM. PAHs have been proposed as possible carriers (Allamandola et al. 1985; Leger & DHendecourt 1985). The PAH hypothesis is consistent with the cosmic abundance of Carbon and Hydrogen and with the required photostability of the DIB carriers against the strong VUV radiation field in the diffuse interstellar clouds. A significant fraction of PAHs is expected to be ionized in the diffuse ISM.
Biennier, L.↗