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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Te/CdTe and Al/CdTe Interfacial Energy Band Alignment by Atomistic Modeling

A synergistic approach that incorporates first-principles atomistic modeling with numerical device simulations is used to systematically evaluate the role of heterointerfaces within metal-chalcogenide-based photovoltaic technologies. Two interfaces involving either a tellurium back contact or aluminum back electrode combined with a cadmium telluride absorber layer within cadmium-telluride-based thin-film solar cells are investigated on an atomic scale to determine the mechanisms contributing to variations in device performance. Electronic structures and predicted charge transport behavior with respect to cadmium and tellurium termination of the absorber layer are studied along the polar oriented CdTe{111} facets. The computational methodology reveals a noticeable contrast between the Schottky barrier forming Al/CdTe interface versus the Type I Te/CdTe heterojunction. Greater band bending features are exhibited by the cadmium termination as opposed to the tellurium termination for each interface case. Subsequent device modeling suggests that 3.6% higher photovoltaic conversion efficiency is achievable for the cadmium termination relative to the tellurium termination of the Te/CdTe interface. Based strictly on an idealistic representation, both interface models show the importance of atomic-scale interfacial properties for cadmium telluride solar cell device performance with their bulk properties being validated in comparison to published experimental data. Here, the synergistic approach offers a suitable method to analyze solar cell interfaces through a predictive computational framework for the engineering and optimization of metal-chalcogenide-based thin-film photovoltaic technologies.

Green’s function↗
DOE OSTI2024

Quantitative assessment of selenium diffusion and passivation in CdSeTe solar cells probed by spatially resolved cathodoluminescence

The introduction of selenium in CdSeTe/CdTe solar cells has led to improved device performances attributed to the passivation of bulk defects. In this work, high-resolution cathodoluminescence experiments are performed on a series of CdSeTe/CdTe thin films with different Se concentrations to quantify the mechanisms and the passivation role of Se. We demonstrate a universal dependence between the Se concentration and the radiative efficiency and a ten-fold enhancement of the luminescence between CdTe and CdSe 0.4 Te 0.6 . Raw luminescence maps are converted into maps of the Se concentration, revealing its graded profile within the stack. We demonstrate the diffusion of Se along CdTe grain boundaries induced by the cadmium chloride annealing treatment and determine the diffusion coefficients, which are more than eight times higher at grain boundaries than in grain interiors. These results provide microscopic insights into the distribution of Se and its impact on the passivation of CdSeTe/CdTe solar cells.

14 SOLAR ENERGY↗
DOE OSTI2020

Numerical simulation of high-efficiency, scalable, all-back-contact Cd(Se,Te) solar cells

In this work, all-back-contact thin film photovoltaic devices in lattice back contact (LBC) configuration are studied by device simulation to set the requirements for achieving efficiency > 20% with lateral contact spacing > 50 µm. The numerical device model is first validated against published data for an LBC perovskite device and extended to predict the performance of Cd(Se,Te)-based polycrystalline devices. Recent advances in the electronic properties of Cd(Se,Te) films have made high efficiency LBC devices feasible with industrially-scalable contact dimensions. Constraints on bulk, interface, and contact properties are quantified and discussed

14 SOLAR ENERGY↗
DOE OSTI2022

Impact of dopant-induced band tails on optical spectra, charge carrier transport, and dynamics in single-crystal CdTe

Abstract Cadmium telluride (CdTe) semiconductors are used in thin-film photovoltaics, detectors, and other optoelectronic applications. For all technologies, higher efficiency and sensitivity are achieved with reduced charge carrier recombination. In this study, we use state-of-the-art CdTe single crystals and electro-optical measurements to develop a detailed understanding of recombination rate dependence on excitation and temperature in CdTe. We study recombination and carrier dynamics in high-resistivity (undoped) and arsenic (As)-doped CdTe by employing absorption, the Hall effect, time-resolved photoluminescence, and pump-probe in the 80–600 K temperature range. We report extraordinarily long lifetimes (30 µs) at low temperatures in bulk undoped CdTe. Temperature dependencies of carrier density and mobility reveal ionization of the main acceptors and donors as well as dominant scattering by ionized impurities. We also distinguish different recombination defects. In particular, shallow As Te and deep V Cd −As Cd acceptors were responsible for p-type conductivity. AX donors were responsible for electron capture, while nonradiative recombination centers (V Cd −As Te , As 2 precipitates), and native defects (V Cd −Te Cd ) were found to be dominant in p-type and n-type CdTe, respectively. Bimolecular and surface recombination rate temperature dependencies were also revealed, with bimolecular coefficient T −3/2 temperature dependence and 170 meV effective surface barrier, leading to an increase in surface recombination velocity at high temperatures and excitations. The results of this study allowed us to conclude that enhanced crucible rotation growth of As-doped CdTe is advantageous to As activation, leading to longer lifetimes and larger mobilities and open-circuit voltages due to lower absorption and trapping.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Cultivation and Use of Acidithiobacillus ferrooxidans in Tellurium Biorecovery

The use of Acidithiobacillus ferrooxidans, Thiobacillus thiooxidans, and other chemoautotrophic microbes in bioleaching have been implemented in a variety of processes.1 In industry, bioleaching has been studied for its potential to extract valuable metals from low grade ores that would otherwise be cost prohibitive to recover.2 Other applications of bioleaching include the ability of certain microbes to detoxify waste products and even heavy metal contaminated soils.3 Another potential application for such bio-oxidative microbial activity is the extraction of tellurium (Te) from mine tailings, a low-cost abundant resource. Tellurium is one of the least common elements on Earth; it is found in the planetary crust at about 1 µg/kg, a rarity most comparable to that of platinum.4 A major use of Te in the U.S. is in cadmium-telluride (CdTe) solar panels5. Te is primarily imported into the U.S. from Canada, and it is usually recovered as a byproduct of copper refining.6 Since CdTe photovoltaic (PV) cells are the most efficient, cost-effective, and environmentally friendly PV chemistry, the renewables market has seen an increased demand for CdTe PV cells causing some concerns about sustainability and the limited global availability of Te. Acidithiobacillus ferroxidans is a microorganism that can oxidize iron and sulfur to produce ferric iron and sulfuric acid, and it is possible that it could also solubilize Te from sulfidic mine tailings. In this project, different media for growth of A. ferroxidans were evaluated, and a plan for testing the ability of A. ferroxidans to leach Te from mine tailings was developed. Initial characterization of A. ferroxidans cultures grown in the presence of copper tailings suggests that conditions suitable for Te bioleaching can be established.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2025

In‐Scribe Silane Bonding for Mechanical Reinforcement of Perovskite Photovoltaic Modules

Despite the extraordinary rise in power conversion efficiency over the last decade, metal halide perovskite (MHP) photovoltaics remain more mechanically fragile than other PV technologies. In this work, the scribe area, created by the monolithic interconnection of thin-film solar cells, is used to extrinsically reinforce the mechanical robustness of packaged MHP solar modules. In contrast to the epoxy-based chemistries often leveraged in the MHP literature, silane-grafted polyolefin encapsulants are designed to form strong covalent bonds to oxide surfaces, specifically to glass and the transparent conductive oxide at the base of the scribe line. Pseudo-modules encapsulated with silane-grafted polyolefin are measured with more than an order-of-magnitude enhancement infracture energy from 0.27 ± 0.01 J·m −2 (no scribes) to 5.97 ± 0.42 J·m −2 (scribes perpendicular to delamination directioncovering ≈2.2% of the module area). The silane-grafted polyolefin retains strong adhesion even after undergoing an accelerated IEC 61215 thermal cycling test consisting of 250 cycles. We find that the in-scribe bonding allows perovskite modules to have adhesion strength comparable to commercial c-Si and CdTe technologies with only 5% reduction in the active module area. This manufacturing-compatible approach offers a practical solution to address the mechanical integrity challenges in MHP solar modules, regardless of cell architecture.

14 SOLAR ENERGY↗
DOE OSTI2025

Interface Engineering using Vapor Transport Deposited Perovskite Films for Solar Cells

The overarching goal of this project was to demonstrate the viability of vapor transport deposition (VTD) for the fabrication of efficient and stable metal-halide perovskite solar cells. VTD is a solvent-free alternative to conventional solution-processing of the light-absorbing, perovskite active layer. Since solution-processing frequently requires the use of toxic solvents, transition to a dry-processing approach has the potential to remove an obstacle to facile and economically meaningful commercialization. Further, VTD bears similarity to existing industrially-relevant processing approaches used for the production of thin-film CdTe solar modules, suggesting the potential for rapid adoption and transition to industry. The results described within this report offer design rules for the processing of metal-halide perovskites via VTD and new insights into the design of deposition systems to inform future applications.

14 SOLAR ENERGY↗
DOE OSTI2022

Feedback between radiation and transport in photovoltaics

By building on the generalized Hovel model, this work develops an analytical solution to unify photon recycling, light trapping, and carrier transport in solar cells. Enhanced transport due to photon recycling diffusion is considered. While photon recycling diffusion is often negligible, it can significantly support transport in cases where charge diffusion is low but radiative efficiency is high. Next, the diffusion equation is solved to determine carrier collection for planar and textured cells. Results elucidate novel features in the external quantum efficiency (EQE) curve that occur for textured cells with high absorption and limited transport. Then, the effect of limited transport on the radiative recombination of solar cells is investigated in detail. While the traditional treatment of detailed balance uses the applied voltage to calculate a cell's radiative recombination, the present approach uses the spatially resolved quasi-Fermi-level splitting (QFLS). Further, the discrepancy between the models is shown to be inconsequential to performance for cells with low radiative recombination (Si) or with high mobilities (lowly doped GaAs). However, for cells with high radiative recombination and low mobility (highly doped GaAs, polycrystalline CdTe, and thin-film perovskites), incorporating variation in QFLS in the determination of radiative recombination can become necessary for accurate photovoltaic modeling.

14 SOLAR ENERGY↗
DOE OSTI2022

Spiers Memorial Lecture: Next generation chalcogenide-based absorbers for thin-film solar cells

Inorganic-based thin-film photovoltaics (TFPV) represents an important component of the growing low-carbon energy market and plays a vital role in the drive toward lower cost and increased penetration of solar energy. Yet, commercialized thin-film absorber technologies suffer from some non-ideal characteristics, such as toxic or non-abundant element use (e.g., CdTe and Cu(In,Ga)(S,Se) 2 , which bring into question their suitability for terawatt deployment. Numerous promising chalcogenide, halide, pnictide and oxide semiconductors are being pursued to bridge these concerns for TFPV and several promising paths have emerged, both as prospective replacements for the entrenched technologies, and to serve as partner (i.e., higher bandgap) absorbers for tandem junction devices—e.g., to be used with a lower bandgap Si bottom cell. The current perspective will primarily focus on emerging chalcogenide-based technologies and provide both an overview of absorber candidates that have been of recent interest and a deeper dive into an exemplary Cu 2 BaSnS 4 -related family. Altogether, considering the combined needs of high-performance, low-cost, and operational stability, as well as the experiences gained from existing commercialized thin-film absorber technologies, chalcogenide-based semiconductors represent a promising direction for future PV development and also serve to highlight common themes and needs among the broader TFPV materials family.

14 SOLAR ENERGY↗
DOE OSTI2020

Sputtered Aluminum Oxide and p+ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSexTe1-x and CdTe Photovoltaics

A thin layer of Al 2 O 3 at the back of CdSe x T e1-x /CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (VOC.) Adding a p + amorphous silicon layer behind the Al 2 O 3 bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al 2 O 3 , amorphous silicon (a-Si), and indium-doped tin oxide (ITO) layers, as well as their interaction with the CdCl 2 passivation process, are necessary to translate these electro-optical improvements into gains in voltage.

14 SOLAR ENERGY↗
DOE OSTI2024

Diagnosing and overcoming recombination and resistive losses in non-silicon solar cells using a silicon-inspired characterization platform

This project aimed to generate the characterization tools needed for accurate and systematic loss analysis in non-silicon photovoltaic solar cell technologies and, through the use of these tools and analysis techniques, contribute to the development of a novel class of hetero-contacts to II-VI absorbers, with the final goal of demonstrating record-breaking CdSeTe devices. CdSeTe solar cells provide a prime example of the potential impact of the techniques we proposed to develop and implement: record poly-CdSeTe cells have bandgap-voltage deficits (W oc ) of approximately 550 mV, as compared with below 400 mV for all other mature PV technologies. Similarly, these record CdSeTe devices have FFs below 80%, when other mature cells are near or above 85%. Frustratingly, a systematic identification of the origin of these sub-par performances—for example recombination or resistive losses—has been lacking, thus slowing down the development of these technologies. Similarly, it is often asserted that CdSeTe cells need a better back (hole) contact. Although most believe this is true, no one knew—at the start of this project—how high the V oc and FF could be for a given cell if it had a perfect back contact. Such characterization techniques and loss analysis methods exist and are routinely performed on c-Si solar cells (e.g. injection-dependent lifetime, Suns-V oc , transfer length method, etc). Over the years, they have been instrumental in the development of silicon devices that operate at 91% of their theoretical (Auger) limit. Lifetime testing, and the associated reconstruction of the implied-J-V curve, can moreover be performed at every cell-processing step, thus allowing a direct peek into the impact of that step on cell performance. Therefore, adapting these techniques and tools to non-Si devices would greatly improve their learning rate. In this project, we developed a Suns-ERE technique—the equipment, methodology, and know-how—to measure the implied-J-V curve, the pseudo-J-V curve, and the actual J-V curve of a thin-film solar cell, allowing an accurate assessment of the quality of the bulk material and its surface passivation, the selectivity of the contact, and its resistivity. We used this technique to show that the absorber of present CdSeTe solar cells is capable of achieving 1 V Voc,, that passivation layers exist (e.g., Al2O3) that can support such high voltages, and that the barrier is identifying contact layers that are both passivating and carrier-selective. The characterization platform created in this project and the understanding generated using it will accelerate the progress of non-silicon PV technologies. In particular, the project will contribute to CdSeTe solar cells with Voc > 1 V and cell efficiency > 24%. Such cells provide a pathway to module-level efficiencies >23%. As CdSeTe presently competes with silicon on module cost (in $\$ $/W) and yet has significantly more room for efficiency gains, the potential for LCOE reduction is particularly large. For example, CdTe modules with an efficiency of 21% would allow an LCOE below $\$ $0.04kWh -1 in average US climates.

14 SOLAR ENERGY↗
DOE OSTI2021

CdSexTe1-x/CdTe Devices with Reduced Interface Recombination Through Novel Back Contacts and Group-V Doping

Since excellent carrier lifetimes and front interface electronic quality are now achieved, rear interface recombination can limit V OC in CdSexTe1-x/CdTe solar cells. Several back-contact structures for devices were fabricated using combinations of tellurium, aluminum oxide, amorphous silicon, and indium tin oxide (ITO). Time-resolved photoluminescence was used to characterize such structures. We show increasingly improved interface passivation through the subsequent use of aluminum oxide, amorphous silicon, and ITO. Additionally, we show that arsenic-doped absorbers form a more passive interface with numerous back contact structures.

aluminum oxide↗
DOE OSTI2023

Cadmium Telluride Solar Cells: From Fundamental Science to Commercial Applications

In order to meet aggressive decarbonization goals, photovoltacs (PV) need to expand substantially. The current technology that heavily dominates the market, silicon (Si), comprises 95% of the world's PV production, is energy intensive to make, and can take up a substantial portion of the remaining carbon budget if expanded. Conversely, cadmium telluride (CdTe) comprises much of the remaining 5% of the global PV market and has a significantly lower carbon footprint than Si, historically costs less to produce, and is critically important to U.S. competitiveness in the global market. Importantly, CdTe still has room to grow, particularly related to efficiency because voltage has historically been much lower than what we calculate it should be. My research is focused in part on understanding this voltage deficit from a fundamental perspective by studying bulk materials and interfaces. One of the most important regions of the device is buried within the stack, so I developed a technique to cleave and reveal buried interfaces. This cleave technique has enabled a much better scientific understanding and allows us to make lightweight, flexible PV while maintaining low costs, high efficiency, and high throughput associated with standard module processing.

CdTe↗
DOE OSTI2025

Comprehensive model for evaluating voltage losses and performance improvements in thin-film photovoltaic devices

Progress of state-of-the-art and next-generation thin-film photovoltaic devices is often stymied by open-circuit voltage (𝑉 oc ) that is significantly lower than theoretical and practical limits. Yet, effectively diagnosing the primary sources of voltage loss remains challenging. Herein, a sequence of device-level characterization techniques and simulations are employed to identify and rank loss mechanisms. For the research-based Cd⁡(Se,Te) device under study, most of the loss was at the front semiconductor heterointerface due to a clifflike conduction-band offset that lowered the recombination activation energy. Additional losses due to band tails were quantified by photoluminescence analysis. The latter provided the absorption coefficient and activation energy reduction associated with band tails as inputs to device models. Simulations showed that alleviating front-interface issues would improve 𝑉 oc , but it would then be limited by bulk recombination. Further improvement of the bulk would then lead to back-contact limitations. Reducing band tails is beneficial in any circumstance. In conclusion, this analysis provides guidance for reaching toward the radiative 𝑉 oc limit.

14 SOLAR ENERGY↗
DOE OSTI2022

Solar Photovoltaics: Supply Chain Deep Dive Assessment

This is one of a series of reports and deep dive assessments produced in response to Executive Order 14017 “America’s Supply Chains,” which directs the Secretary of Energy to submit a report on supply chains for the energy sector industrial base. The Executive Order is helping the federal government to build more secure and diverse U.S. supply chains, including energy supply chains. Over the past decade, solar power has gone from an emerging, niche technology to a mature energy industry. By 2035, solar power could supply 40% or more of U.S. electricity demand, dramatically accelerating the decarbonization of buildings, transportation, and industry; and, if current technology trends continue, it could do so without increasing the price of electricity. The rapid expansion of solar energy has the potential to yield broad benefits in the form of economic activity and workforce development. The solar industry already employs roughly 230,000 people in the United States, at an average wage that is higher than the national average for most comparable positions. By decarbonizing the electricity sector by 2035, the U.S. solar industry could employ 500,000–1,500,000 people by 2030. The components that are assembled to install a photovoltaic power system are produced by a global supply chain. Photovoltaic (PV) modules (also called panels) are made of cells that use a variety of technologies. There are two leading types of solar modules used in the United States, with crystalline silicon (c-Si) modules representing 84% of the market and cadmium telluride (CdTe) modules representing 16% of the market. Modules of either type require mounting structures to provide mechanical support (racking), which may be configured to follow the sun (tracking). The output of any PV module is direct current (dc), which is almost always converted to alternating current (ac) by an inverter.

14 SOLAR ENERGY↗
DOE OSTI2020

Optoelectronic and material properties of solution-processed Earth-abundant Cu 2 BaSn(S, Se) 4 films for solar cell applications

Copper barium thioselenostannate, Cu 2 BaSnS 4-x Se x (CBTSSe), absorbers employ low-toxicity and abundant metals while offering low-cost manufacturing options, controllable stoichiometry and band gap tunability (from 2 eV at x = 0 to 1.55 eV at x = 3). CBTSSe can therefore be considered a prospective candidate for maintaining or improving upon the advantages of already commercialized Cu(In,Ga)(S,Se) 2 (CIGSSe) and CdTe absorbers. Here, we focus on solution-deposited stoichiometric CBTSSe films with band gap of 1.59 eV (x ≈ 3) and explore the fundamental film properties. Temperature- and excitation-dependent photoluminescence studies reveal a dominant defect emission at ~1.5 eV and a second deep defect feature at 1.15 eV. From time-resolved terahertz measurements, we find a charge carrier (electron and hole sum) mobility of ~140 cm 2 /Vs—i.e., comparable to values in CIGSSe or Cu 2 ZnSnS 4-x Se x (CZTSSe)—as well as a two-component minority carrier lifetime. A longer-lived lifetime component (~2 ns) arises from bulk recombination. However, strong recombination at the (bare) surface leads to a ~50 ps lifetime, inferior to state-of-the-art CIGSSe or CZTSSe absorbers. This recombination issue may worsen for CBTSSe/CdS interfaces, due to a cliff-like band alignment with 0.6 eV band offset, as revealed by ultraviolet photoemission spectroscopy. A low number of charge carriers within the absorber further contributes to a high series resistance. Employing these films, we also report the highest performance achieved from solution-processed trigonal CBTSSe thin-film photovoltaic devices, with open circuit voltage, short-circuit current density, fill factor and efficiency of 470 mV, 14.3 mA/cm 2 , 43.6% and 2.9%, respectively. The physical measurements provided on the stoichiometric solution-processed CBTSSe absorber further point to critical areas for future improvement of CBTSSe and related photovoltaic cells in the quest for higher efficiency devices based on earth abundant metals.

14 SOLAR ENERGY↗
DOE OSTI2023

A Dive into Underwater Solar Cells

Our oceans are vast, mostly unexplored and difficult to monitor. Large-scale implementation of a fully autonomous 'Internet of Underwater Things' would transform how we collect and share data from this domain; however, deployment is prohibited by the lack of persistent power sources. In principle, underwater solar-energy generation can complement the use of batteries and provide a solution, although dedicated research is needed since traditional silicon solar cells do not perform well underwater due to water's strong absorption of near-infrared light. In this Perspective we present examples of solar-powered underwater applications and discuss which types of solar-harvesting materials could be appropriate, including GaInP variants, CdTe, organic semiconductors, and perovskite semiconductors. We also discuss challenges that need to be addressed, such as the development of effective antifouling coatings and new certification standards given that underwater conditions are starkly different from those in terrestrial environments.

antifouling coatings↗