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NASA NTRS1981

Meteoric ion production near Jupiter

Meteoric ion layer formation within the Jovian atmosphere is examined with attention to metallic ion production in the lower ionosphere. The Fe(+) impact ionization rate within the Jovian atmosphere peaks above the mesopause with a magnitude of approximately 0.5 cu cm/sec and is much less than the ambient ionosphere photoionization rates near the late afternoon Pioneer 10 ionosphere occultation. Charge exchange of the ablated neutral Fe atoms with ambient ions can result in an Fe(+) production rate of about 10 cu cm/sec. Ignoring transport, steady state Fe(+) density maxima of about 10,000 or 1,000,000 cu cm can be maintained when Fe(+) loss is through radiative association or radiative recombination respectively. Even if an estimated lower limit to the incident meteoroid flux is used based on a meteoroid spatial density which does not vary with distance from the sun, the corresponding Fe(+) peak densities are 1,000 and 500,000 cu cm, respectively. Meteoric ion densities may thus be important in the Jovian lower ionosphere.

Grebowsky, J. M.↗

NASA NTRS2006

Silicon-Based Optical Modulator with Ferroelectric Layer

According to a proposal, a silicon dioxide layer in a high-speed, low-power, silicon- based electro-optical modulator would be replaced by a layer of lead zirconate titanate or other ferroelectric oxide material. The purpose of this modification is to enhance the power performance and functionality of the modulator. In its unmodified form, the particular silicon- based electro-optical modulator is of an advanced design that overcomes the speed limitation of prior silicon-based electro- optical modulators. Whereas modulation frequencies of such devices had been limited to about 20 MHz, this modulator can operate at modulation frequencies as high as 1 GHz. This modulator can be characterized as a silicon-waveguide-based metal oxide/semiconductor (MOS) capacitor phase shifter in which modulation of the index of refraction in silicon is obtained by exploiting the free-charge-carrier-plasma dispersion effect. As shown in the figure, the modulator includes an n-doped crystalline silicon slab (the silicon layer of a silicon- on-insulator wafer) and a p-doped polycrystalline silicon rib with a gate oxide layer (the aforementioned silicon dioxide layer) sandwiched between them. Under accumulation conditions, the majority charge carriers in the silicon waveguide modify the index of refraction so that a phase shift is induced in the optical mode propagating in the waveguide. The advantage of using an MOS capacitor phase shifter is that it is possible to achieve high modulation speed because there are no slow carrier-generation or -recombination processes involved in the accumulation operation. The main advantage of the proposed substitution of a ferroelectric oxide layer for the silicon dioxide layer would arise from the spontaneous polarization effect of the ferroelectric layer: This spontaneous polarization would maintain accumulation conditions in the absence of applied voltage. Consequently, once the device had been switched to a given optical state, it would remain in that state, even in the absence of applied voltage (in other words, even with power turned off). A secondary advantage is that because the ferroelectric layer would have an index of refraction larger than that of silicon dioxide, there could be some reduction of optical losses attributable to fabrication of the modulator

Sheldon, Douglas↗

NASA NTRS1975

Ion-implanted epitaxially grown ZnSe

The use of ZnSe to obtain efficient, short wavelength injection luminescence was investigated. It was proposed that shorter wavelength emission and higher efficiency be achieved by employing a p-i-n diode structure rather than the normal p-n diode structure. The intervening i layer minimizes concentration quenching effects and the donor-acceptor pair states leading to long wavelength emission. The surface p layer was formed by ion implantation; implantation of the i layer rather than the n substrate permits higher, uncompensated p-type doping. An ion implanted p-n junction in ZnSe is efficiency-limited by high electron injection terminating in nonradiative recombination at the front surface, and by low hole injection resulting from the inability to obtain high conductivity p-type surface layers. While the injection ratio in p-n junctions was determined by the radio of majority carrier concentrations, the injection ratio in p-i-n structures was determined by the mobility ratios and/or space charge neutrality requirements in the i layer.

Chernow, F.↗

NASA NTRS1987

Predictions of the electrical conductivity and charging of the aerosols in Titan's atmosphere

Computational results are given for Titan atmosphere aerosol electrical conductivity and charge at altitudes up to 400 km, together with a consideration of ionization from such sources as galactic cosmic rays and electron precipitation from the Saturnian magnetosphere. Predicted conductivity shows the existence of substantial electron concentrations up to the Titan surface. At altitudes of more than 100 km, and aerosol concentrations greater than 10/cu cm, electron/positive ion-recombination is found to be controlled by the recombination of the aerosols' surfaces rather than by the gas-kinetic recombination rate.

Borucki, W. J.↗

NASA NTRS1977

Studies of silicon pn junction solar cells

Modifications of the basic Shockley equations that result from the random and nonrandom spatial variations of the chemical composition of a semiconductor were developed. These modifications underlie the existence of the extensive emitter recombination current that limits the voltage over the open circuit of solar cells. The measurement of parameters, series resistance and the base diffusion length is discussed. Two methods are presented for establishing the energy bandgap narrowing in the heavily-doped emitter region. Corrections that can be important in the application of one of these methods to small test cells are examined. Oxide-charge-induced high-low-junction emitter (OCI-HLE) test cells which exhibit considerably higher voltage over the open circuit than was previously seen in n-on-p solar cells are described.

Lindholm, F. A.↗

NASA NTRS1988

Experimental observation of electrochemical rate limitations affecting sodium ion-electron recombination at electrodes of the alkali metal thermoelectric converter at T about 1200 K

This paper considers a model of the internal impedances of thin porous Mo and W alkali metal thermoelectric converter (AMTEC), in which the kinetic parameters associated with the reaction of the beta-double-prime alumina solid electrolite (BASE)/porous metal/gas three-phase boundary can be evaluated. Impedance data in the frequency range 0.01-100,000 Hz were collected over a range of AMTEC cell operating voltages for small-area thin porous Mo and W electrodes, yielding apparent charge transfer resistances at a series of cell potentials/currents. The ohmic resistance in the AMTEC cell could be broken down and characterized with three parameters: the BASE ionic resistance, the electrode film sheet resistance, and the contact/lead resistance, all of which could be calculated or measured independently and used to calculate power curves in good agreement with observed power curves. It is shown that these calculations can be used to predict the properties of electrodes with optimized parameters or to detect enhanced transport modes.

Williams, R. M.↗

NASA NTRS1993

High-resolution measurements, line identification, and spectral modeling of K-alpha transitions in Fe XVIII-Fe XXV

A detailed analysis of the iron K-alpha emission spectrum covering the wavelength region from 1.840 to 1.940 A is presented. Measurements are made with a high-resolution Bragg crystal spectrometer on the Princeton Large Torus (PLT) tokamak for plasma conditions which closely resemble those of solar flares. A total of 40 features are identified, consisting of either single or multiple lines from eight charge states in iron, Fe XVIII - Fe XXV, and their wavelengths are determined with an accuracy of 0.1-0.4 mA. Many of these features are identified for the first time. In the interpretation of our observations we rely on model calculations that determine the ionic species abundances from electron density and temperature profiles measured independently with nonspectroscopic techniques and that incorporate theoretical collisional excitation and dielectronic recombination rates resulting in the excitation of the 1s2sr2ps configurations. The model calculations also include the effect of diffusive ion transport. Good overall agreement between the model calculations and the observations is obtained, which gives us confidence in our line identifications and spectral modeling capabilities. The results are compared with earlier analyses of the K-alpha emission from the Sun.

Beiersdorfer, P.↗

NASA NTRS1994

Nematode radiobiology and development in space. Results from IML-1

The Radiat experiment was one of 17 investigations which used the ESA Biorack on IML-1 (International Microgravity Laboratory) and it had two objectives. The first objective was to isolate and characterize mutations induced by cosmic rays; the second was to assess the fidelity of development in 0-gravity over two consecutive generations. Two strategies were used to isolate mutations in a set of essential genes or a specific gene and to correlate the genetic events with the passage of charged particles. The results were isolation of 60 lethal mutations whose phenotypes are related to the local pattern of energy deposition. 12 mutations in the unc-22 gene include large deletions as characterized by DNA hybridization studies. Development of nematodes proceeded through two consecutive generations with no obvious defects. Cytoplasmic determinants in embryos, nuclear location and symmetry of cellular anatomy were normal as were Mendelian segregation and recombination of genetic markers.

Nelson, Gregory A.↗

NASA NTRS1977

New processes and materials for ultraviolet detection with solid state devices

The three major effects that degrade external responsivity of silicon from the 1/lambda theoretical curve for a quantum detector are: surface reflectance, surface recombination, and junction depth. Since the p-n junction must be very shallow, problems relating to surface are further enhanced. MOS type of processing is necessary. HCl oxides and numerous acid clean-ups are utilized in order to obtain a contamination free surface with low Qss levels. Stringent process controls such as CV shifts, spreading resistance measurements, thickness monitoring etc., are used to analyze the surface contaminations, surface mobile charges, surface concentrations, junction depth, oxide thickness etc. Low surface concentrations of 10 to the 18th atoms/cu cm are achieved by low temperature boron nitride depositions. Shallow junction depths of the order of a few tenths of a micron are achieved by low temperature controlled diffusions. In order to improve breakdown characteristics of these shallow junction devices, field plate and deep diffused p(+) ring geometries are used.

Chopra, D.↗

NASA NTRS1980

Effects of angular-momentum-changing collisions on dielectronic satellite spectra

A generalization of the low-density corona-model theory of the intensities of satellite lines of the resonance lines emitted by multiply charged helium-like ions in the X-ray spectra of high-temperature plasmas is developed in order to take account of electron collisional transitions between close autoionizing levels. A formalism for determining the population densities of the autoionizing levels and the satellite line intensities is presented, and the quantum mechanical calculation of autoionization, radiative decay and electron-induced collisional transitions is discussed. Generalized emission rate coefficients corresponding to dielectronic recombination and inner-shell-electron collisional excitation are tabulated as functions of electron density and temperature. The procedure is then used to illustrate the effects of angular-momentum-changing electron collisions on the intensities of the satellites of the 1s2p 1P to 1s2 1S resonance line of the ions Al XII and Si XIII. It is concluded that the collisional transitions have their most significant effect on the intensities of satellite transitions from metastable autoionizing states, which may be useful in determining plasma densities.

Jacobs, V. L.↗

NASA NTRS1994

The photoelectric heating mechanism for very small graphitic grains and polycyclic aromatic hydrocarbons

We have theoretically modeled the gas heating associated with the photoelectric ejection of electrons from a size distribution of interstellar carbon grains which extends into the molecular domain. We have considered a wide range of physical conditions for the interstellar gas (1 less than G(sub 0) less than 10(exp 5), with G(sub 0) being the intensity of the incident far-UV field in units of the Habing interstellar radiation field; 2.5 x 10( exp -3) less than n(sub e) less than 75/cu cm, with n(sub e) being the electron density; 10 less than T less than 10,000 K, with T being the gas temperature). The results show that about half of the heating is due to grains less than 1500 C atoms (less than 15 A). The other half originates in somewhat larger grains (1500-4.5 x 10(exp 5) C atoms; 15 less than 100 A). While grains larger than this do absorb about half of the available far-UV photons, they do not contribute appreciably to the gas heating. This strong dependence of gas heating on size results from the decrease in yield and from the increased grain charge (hence larger Coulomb losses) with increasing grain size. We have determined the net photoelectric heating rate and evaluated a simple analytical expression for the heating efficiency, dependent only on G(sub 0), T, and n(sub e). This expression is accurate to 3% over the whole parameter range and is valid up to gas temperatures of 10(exp 4) K, at which point the dominant gas-dust heat exchange mechanism becomes the recombination of electrons with grains rather than photoelectric ejection. The calculated heating efficiency for neutral grains is in good agreement with that derived from observations of the diffuse interstellar clouds. Our results also agree well with the Far Infrared Absolute Spectrometer (FIRAS) observations on the Cosmic Background Explorer Satellite. Finally, our photoelectric heating efficiency is compared to previous studies.

Bakes, E. L. O.↗

NASA NTRS2021

Probing the Origin of the Open Circuit Voltage in Perovskite Quantum Dot Photovoltaics

Perovskite quantum dots (PQDs) have many properties that make them attractive for optoelectronic applications, including expanded compositional tunability and crystallographic stabilization. While they have not achieved the same photovoltaic (PV) efficiencies of top-performing perovskite thin films, they do reproducibly show high open circuit voltage (VOC) in comparison. Further understanding of the VOC attainable in PQDs as a function of surface passivation, contact layers, and PQD composition will further progress the field and may lend useful lessons for non-QD perovskite solar cells. Here, we use photoluminescence-based spectroscopic techniques to understand and identify the governing physics of the VOC in CsPbI3 PQDs. In particular, we probe the effect of the ligand exchange and contact interfaces on the VOC and free charge carrier concentration. The free charge carrier concentration is orders of magnitude higher than in typical perovskite thin films and could be tunable through ligand chemistry. Tuning the PQD A-site cation composition via replacement of Cs+ with FA+ maintains the background carrier concentration but reduces the trap density by up to a factor of 40, reducing the VOC deficit. These results dictate how to improve PQD optoelectronic properties and PV device performance and explain the reduced interfacial recombination observed by coupling PQDs with thin-film perovskites for a hybrid absorber layer.

perovskite quantum dot↗

NASA NTRS1980

An alternative approach to charge transport in semiconducting electrodes

The excess-carrier charge transport through the space-charge region of a semiconducting electrode is analyzed by a technique known as the flux method. In this approach reflection and transmission coefficients appropriate for a sheet of uniform semiconducting material describe its transport properties. A review is presented of the flux method showing that the results for a semiconductor electrode reduce in a limiting case to those previously found by Gaertner if the depletion layer is treated as a perfectly transmitting medium in which scattering and recombination are ignored. Then, in the framework of the flux method the depletion layer is considered more realistically by explicitly taking into account scattering and recombination processes which occur in this region.

Thomchick, J.↗

NASA NTRS1972

Dynamics of the molecular and atomic mechanisms for the hydrogen-iodine exchange reaction.

The molecular and atomic mechanisms for the hydrogen-iodine exchange reaction are treated theoretically by means of extensive classical trajectories calculated on a reasonable potential energy surface on which the single adjustable parameter is the iodine-core effective charge. The analysis shows the molecular mechanism to be dynamically forbidden, but gives an over-all rate constant for the atomic mechanism that is in agreement with the experimental values. It is indicated that the formation of a weak H2I complex plays an important dynamical role if the atomic mechanism is limited to reactions with collision complexes involving no more than two hydrogen atoms and two iodine atoms. Excellent agreement with experiment is obtained for the rate constant for the recombination I+I+H2 yields I2+H2 and its negative temperature coefficient.

Raff, L. M.↗

NASA NTRS1976

Formation of the 0.511 MeV line in solar flares

The slowing down and annihilation of positrons and the formation of positronium in a solar flare plasma are investigated to determine how the width of the 0.511-MeV line and its strength relative to the three-photon continuum from positronium decay depend on the temperature and density of the medium in which the positron comes to rest. The calculations are limited to the cases of annihilation in a completely ionized plasma, in a partially ionized plasma with an electron/neutron density ratio of 1.0 or 0.1, and in an atomic gas with a very small ion density. Thermally averaged rate coefficients are obtained for the free annihilation of positrons and for positronium formation through radiative recombination in the fully ionized plasma. Positronium formation rates and the resultant energy distributions of the positronium atoms in the partially ionized medium are determined by numerically solving the Fokker-Planck equation in a medium where the ambient free electrons have a Maxwell-Boltzmann distribution of finite temperature but the density of the medium is sufficiently low that positronium atoms decay without further collisions following their formation. A Monte Carlo calculation is performed for the positron energy loss, positronium formation through charge exchange, and positronium breakup in the weakly ionized medium. The energy distributions of decaying positronium atoms and the relative number of triplet to singlet positronium decays are evaluated for ion concentrations and densities characteristic of the solar photosphere.

Crannell, C. J.↗

NASA NTRS1981

Transport velocity transformation - A convenient method for performance analysis of multilayer solar cell structure

It is noted that in the case of low-level injection, space-charge quasi-neutrality, and spatially constant material parameters (including an electrostatic field), the individual layer can be treated analytically and the basic solar cell performance parameters can be evaluated from three equations. The first equation represents the transformation of the transport velocity across the layer from the other layer boundary. The second establishes the light-generated current output from the layer interface, under the influence of the transport velocities and minority-carrier density at both layer boundaries and of bulk recombination. The third equation describes the flow of these carriers across other layers. The power of the approach is considered to lie in its facility for analysis of the solar cell's performance layer by layer, giving a clear picture of the individual layer's influence on cell efficiency.

Wolf, M.↗

NASA NTRS1986

Heavy doping effects in high efficiency silicon solar cells

The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

Lindholm, F. A.↗

NASA NTRS2003

Paramagnetic Attraction of Impurity-Helium Solids

Impurity-helium solids are formed when a mixture of impurity and helium gases enters a volume of superfluid helium. Typical choices of impurity gas are hydrogen deuteride, deuterium, nitrogen, neon and argon, or a mixture of these. These solids consist of individual impurity atoms and molecules as well as clusters of impurity atoms and molecules covered with layers of solidified helium. The clusters have an imperfect crystalline structure and diameters ranging up to 90 angstroms, depending somewhat on the choice of impurity. Immediately following formation the clusters aggregate into loosely connected porous solids that are submerged in and completely permeated by the liquid helium. Im-He solids are extremely effective at stabilizing high concentrations of free radicals, which can be introduced by applying a high power RF dis- charge to the impurity gas mixture just before it strikes the super fluid helium. Average concentrations of 10(exp 19) nitrogen atoms/cc and 5 x 10(exp 18) deuterium atoms/cc can be achieved this way. It shows a typical sample formed from a mixture of atomic and molecular hydrogen and deuterium. It shows typical sample formed from atomic and molecular nitrogen. Much of the stability of Im-He solids is attributed to their very large surface area to volume ratio and their permeation by super fluid helium. Heat resulting from a chance meeting and recombination of free radicals is quickly dissipated by the super fluid helium instead of thermally promoting the diffusion of other nearby free radicals.

Bernard, E. P.↗