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At least 181 records · Page 10

High-Pressure Equation of State for Partially Ionic Solids

Recently, we showed that the cohesive energy of partially ionic solids may be characterized by a two-term energy relationship consisting of a Coulomb term arising from the valence-charge transfer delta Z between the atoms, and a scaled universal energy function E(sup *)(a(sup *)), which accounts for the partially covalent character of the bond and for the repulsion between the atomic cores for small R; a(sup *) is a scaled length. Normalized cohesive-energy curves of alkali halide crystals and of Ti and Ag halide crystals were obtained, and the cohesive-energy-curve parameters were used to generate theoretical equation-of-state (EOS) curves for the Li, Na, K, Cs, and Ag halides. Good agreement was obtained with the experimental isothermal compression curves over a wide pressure range (0-90 kbar). In this paper we verify that the cohesive-energy relationship is valid for divalent partially ionic solids; physically reasonable charge-transfer values (1.80 less than delta Z less than 2.0) are obtained for MgO, CaO, and CaS. Next, EOS curves for LiF, NaF, Nal, CsCl, Csl, MgO, CaO, and CaS are generated in terms of the cohesive-energy parameters. These EOS's yield excellent fits to experimental isothermal-compression data and to shock-wave data to very high pressures (P(sub max)= 250-1350 kbar).

Schlosser, Herbert↗

Are Hyperion and Phoebe Linked to Iapetus?

Narrowband reflectance spectra of the Saturnian satellites S VII Hyperion and S IX Phoebe were obtained across the 0.4 - 0.8 micron spectral region. The spectrum of Phoebe is similar to the spectrum of a C-class asteroid, with an absorption feature centered near 0.43 micron superimposed on the UV/blue intervalence charge transfer transition present in the spectrum. The spectrum of Hyperion shows the strong spectral slope apparent in spectra of many outer Solar System materials and attributed to organics. We use a linear mixing model to separate the reflectance spectrum of the dark material on Hyperion from the icy material. A distinct absorption feature centered at 0.67 micron is present. A slight inflection near 0.4 - 0.6 micron and change in slope near 0.73 micron suggesting the lower wavelength edge of an absorption are also present. These absorptions are very similar to those identified in the spectrum of the dark material on the surface of Iapetus, suggesting that the dark material on these two satellites is compositionally similar and has a similar origin. These absorption features are attributed to the (6)A(sub 1) yields (4)T(sub 2)(G) and (6)A(sub 1) yields (4)T(sub 1)(G) ferric charge transfer transitions in iron alteration minerals such as goethite and hematite that are products of the aqueous alteration of anhydrous silicates.

Jarvis, Kandy S.↗

Redox chemistry at liquid/liquid interfaces

The interface between two immiscible liquids with immobilized photosynthetic pigments can serve as the simplest model of a biological membrane convenient for the investigation of photoprocesses accompanied by spatial separation of charges. As it follows from thermodynamics, if the resolvation energies of substrates and products are very different, the interface between two immiscible liquids may act as a catalyst. Theoretical aspects of charge transfer reactions at oil/water interfaces are discussed. Conditions under which the free energy of activation of the interfacial reaction of electron transfer decreases are established. The activation energy of electron transfer depends on the charges of the reactants and dielectric permittivity of the non-aqueous phase. This can be useful when choosing a pair of immiscible solvents to decrease the activation energy of the reaction in question or to inhibit an undesired process. Experimental interfacial catalytic systems are discussed. Amphiphilic molecules such as chlorophyll or porphyrins were studied as catalysts of electron transfer reactions at the oil/water interface.

Non-NASA Center↗

Measurements of the O+ plus N2 and O+ plus O2 reaction rates from 300 to 900 K

Rate coefficients for the O(+) + N2 atom transfer and O(+) + O2 charge transfer reactions are determined at thermal energies between 300 K and 900 K difference in a heated drift tube mass spectrometer apparatus. At 300 K the values K(O(+) + N2) = (1.2 plus or minus 0.1) x 10 to the negative 12 power cubic cm/sec and k(O(+) + O2) = (2.1 plus or minus 0.2) x 10 to the negative 11 power cubic cm/sec were obtained, with a 50% difference decrease in the reaction rates upon heating to 700 K. These results are in good agreement with heated flowing afterglow results, but the O(+) + O2 thermal rate coefficients are systematically lower than equivalent Maxwellian rates inferred by conversion of nonthermal drift tube and flow drift data.

Chen, A.↗

Preshock region acceleration of implanted cometary H(+) and O(+)

A self-consistent, three-fluid model of plasma transport and implanted ion acceleration in the unshocked solar wind is presented. The solar wind plasma is depleted by charge exchange with the expanding cometary exosphere, while implanted protons and heavy ions are produced by photoionization and charge transfer and lost by charge exchange. A generalized transport equation describing convection, adiabatic and diffusive velocity change, and the appropriate production terms is used to describe the evolution of the two cometary ion components, while the moments of the Boltzmann equation are used to calculate the solar wind density and pressure. The flow velocity is obtained self-consistently by combining the conservation equations of the three ion species. The results imply that second-order Fermi acceleration can explain the implanted spectra observed in the unshocked solar wind. Comparison of measured and calculated distribution indicates that spatial diffusion of implanted ions probably plays an important role in forming the energetic particle environment in the shock vicinity.

Gombosi, Tamas I.↗

Active pixel sensor array with multiresolution readout

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. The imaging device can also include an electronic shutter formed on the substrate adjacent the photogate, and/or a storage section to allow for simultaneous integration. In addition, the imaging device can include a multiresolution imaging circuit to provide images of varying resolution. The multiresolution circuit could also be employed in an array where the photosensitive portion of each pixel cell is a photodiode. This latter embodiment could further be modified to facilitate low light imaging.

Fossum, Eric R.↗

Active pixel sensor pixel having a photodetector whose output is coupled to an output transistor gate

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. A Simple Floating Gate (SFG) pixel structure could also be employed in the imager to provide a non-destructive readout and smaller pixel sizes.

Fossum, Eric R.↗

Method of acquiring an image from an optical structure having pixels with dedicated readout circuits

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗

Notch Charge-Coupled Devices

Notch charge-coupled devices are imaging arrays of photodetectors designed to exhibit high charge-transfer efficiencies necessary for operation in ultra-large array, and less vulnerable to degradation by energetic protons, neutrons, and electrons. Main channel of horizontal register includes deep narrow inner channel (notch). Small packets of charge remain confined to notch. Larger packets spill into rest of channel; transferred in usual way. Degradation of charge-transfer efficiency by energetic particles reduced.

Janesick, James↗

The impedance of a tubular electrode - A model for a porous electrode

A cylindrical tube is used as the basis for a two-dimensional mathematical model to calculate the impedance of a flooded porous electrode. The model incorporates charge-transfer, mass-transfer, and ohmic resistances to obtain the axial and radial dependencies of the concentration and potential profiles. A linearized Butler-Volmer kinetic expression for a simple redox reaction O + e yielding R is used, in conjuction with analytical expressions for the surface concentration and overpotential, to compute the open-circuit impedance. The results of the two-dimensional model, which omits double-layer charging, are compared with the results of a more standardly applied one-dimensional model in which radial variations are neglected, with and without double-layer charging. The simpler-to-apply one-dimensional model is found to be satisfactory when mass-transfer and ohmic resistances are small with respect to charge-transfer resistance. The omission of double-layer charging does not introduce error into the two-dimensional model in the frequency range in which capacitive-like effects are caused by mass-transfer limitations.

Viner, Andrew S.↗

Charge Generation and Propagation in Igneous Rocks

Resistivity changes, ground potentials, electromagnetic (EM) and luminous signals prior to or during earthquakes have been reported, in addition to ground uplift and tilt, and to changes in the seismic wave propagation parameters. However, no physical model exists that ties these diverse phenomena together. Through time-resolved impacts experiments it has been observed that, when igneous rocks (gabbro, diorite, granite) are impacted at low velocities (approx. 100 m/sec), highly mobile electronic charge carriers are generated, spreading from a small volume near the impact point, causing electric potentials, EM and light emission. The rock becomes momentarily conductive. When impacted at higher velocities (approx. 1.5 km/sec), the propagation of the P and S waves is registered through the transient piezoelectric response of quartz. At the same time, the rock volume is filled with mobile charge carriers, and a positive surface potential is registered. During the next 1-2 msec the surface potential oscillates, due to electron injection from ground. These observations are consistent with positive holes, e.g. defect electrons in the O(2-) sublattice, that can travel via the O 2p-dominated valence band of the silicate minerals at the speed of a phonon-mediated charge transfer. Before activation, the positive hole charge carriers lay dormant in form of positive hole pairs, PHP, electrically inactive, chemically equivalent to peroxy links in the structures of constituent minerals. PHPs are introduced by way of hydroxyl (O3Si-OH) incorporated into nominally anhydrous minerals when they crystallize in water-laden environments. Given that sound waves of even relatively low intensity appear to cause PHPs dissociation, thus generating mobile positive holes, it is proposed that microfracturing during rock deformation cause PHP dissociation. Depending on where and how much the rock volume is stressed, the positive holes are expected to form fluctuating charge clouds in the earthquake source region that may account for earthquake-related electrical phenomena and the reported low frequency EM signals.

Freund, Friedemann↗

Molecular implementation of molecular shift register memories

An electronic shift register memory (20) at the molecular level is described. The memory elements are based on a chain of electron transfer molecules (22) and the information is shifted by photoinduced (26) electron transfer reactions. Thus, multi-step sequences of charge transfer reactions are used to move charge with high efficiency down a molecular chain. The device integrates compositions of the invention onto a VLSI substrate (36), providing an example of a molecular electronic device which may be fabricated. Three energy level schemes, molecular implementation of these schemes, optical excitation strategies, charge amplification strategies, and error correction strategies are described.

Beratan, David N.↗

Chemical reactions in electrical plasmas.

Chemical kinetics of electron plasma reactions, discussing energy states, ion-molecule reactions, charge transfer, transport properties, phase interactions, etc

ENERGY LEVEL↗

Neutral atomic oxygen beam produced by ion charge exchange for Low Earth Orbital (LEO) simulation

A low energy neutral atomic oxygen beam system was designed and is currently being assembled at the Lewis Research Center. The system utilizes a 15 cm diameter Kaufman ion source to produce positive oxygen ions which are charge exchange neutralized to produce low energy (variable from 5 to 150 eV) oxygen atoms at a flux simulating real time low Earth orbital conditions. An electromagnet is used to direct only the singly charged oxygen ions from the ion source into the charge exchange cell. A retarding potential grid is used to slow down the oxygen ions to desired energies prior to their charge exchange. Cryogenically cooled diatomic oxygen gas in the charge exchange cell is then used to transfer charge to the oxygen ions to produce a neutral atomic oxygen beam. Remaining non-charge exchanged oxygen ions are then swept from the beam by electromagnetic or electrostatic deflection depending upon the desired experiment configuration. The resulting neutral oxygen beam of 5 to 10 cm in diameter impinges upon target materials within a sample holder fixture that can also provide for simultaneous heating and UV exposure during the atomic oxygen bombardment.

Banks, Bruce↗

Testing and analysis of photovoltaic modules for electrochemical corrosion

This paper describes the testing and evaluation used to characterize the mechanisms of electrochemical corrosion of photovoltaic modules - encapsulated solar cells. Accelerated exposure testing was performed on a sample matrix of cell/encapsulant combinations, and microanalytical failure analysis was performed on selected samples to confirm the correlation between the accelerated test data and the life prediction model. A quantitative correlation between field exposure time and exposure time in the accelerated multistress tests was obtained based upon the observation that equal quantities of interelectrode charge transfer resulted in equivalent degrees of electrochemical charge.

Neff, Michael↗