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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Structure development in silicon sheet by shaped crystallization

Models are presented for the development of a parallel twinned structure of the 110 plane type and the 112 line type in silicon ribbons. The models are believed to be mutually compatible and operable. The first model relates the requirements for super-cooling during crystallization. The existence of reentrant angles associated with the twin structure is proposed to provide a rough interface to reduce super-cooling. The spacing of the twins is proposed to be limited by the geometrical relationship between the thermal gradient in the liquid and the dimensions of the twinned crystallization front. The second model relates the thermal stress configuration to detail dislocation reactions which would be expected to develop twins. While a specific dislocation mechanism cannot yet be defined, a number of alternatives are presented. All of these various dislocation mechanisms would result in the observed crystalline configuration and the choice among them is not critical.

Leipold, M. H.↗
NASA NTRS1979

Structure and electrical activity of planar defects in EFG ribbons

Optical, electron beam induced current (EBIC), and transmission electron microscopy were used to study the structure and electrical activity of planar defects in EFG silicon. What appears to be twin boundaries by both optical microscopy plus etching, and by EBIC are in reality systems of microtwins, some of which are only a few atomic lattice planes thick. The electrical activity of planar defects appears to be correlated with emission of dislocations especially at termination points. Impurity effects may also play a role. Twin boundaries per se appear not to be electrically active.

Ast, D. G.↗
NASA NTRS1990

Crystal-melt interface shape of Czochralski-grown large diameter germanium crystals

Crystal-melt interface shapes of 100 to 200 mm diameter 111-line Ge grown by the Czochralski technique have been examined using the method of fast withdrawal from the melt. Initially, the interface shape is convex, then transforms gradually into a sigmoidal shape, becomes nearly planar at about one third of the final crystal length, and finally assumes a concave profile with progressively increasing curvature. The nearly planar interface has a double-facet structure, with an annular facet at the edge of the crystal in addition to the central (111) facet. Formation of the annular facet is accompanied by a giant oscillation of the pull rate when the maximum average pull rate is exceeded. Such oscillation is detrimental to crystal quality, since it introduces a region of high dislocation density. An average pull rate maximum of 2 cm/h has been found to allow for a smooth growth of 200 mm diameter crystals. The origin of the pull rate perturbation is discussed in terms of an instantaneous change in the equilibrium shape of the meniscus.

Roth, M.↗
NASA NTRS2011

Modeling and Characterization of Damage Processes in Metallic Materials

This paper describes a broad effort that is aimed at understanding the fundamental mechanisms of crack growth and using that understanding as a basis for designing materials and enabling predictions of fracture in materials and structures that have small characteristic dimensions. This area of research, herein referred to as Damage Science, emphasizes the length scale regimes of the nanoscale and the microscale for which analysis and characterization tools are being developed to predict the formation, propagation, and interaction of fundamental damage mechanisms. Examination of nanoscale processes requires atomistic and discrete dislocation plasticity simulations, while microscale processes can be examined using strain gradient plasticity, crystal plasticity and microstructure modeling methods. Concurrent and sequential multiscale modeling methods are being developed to analytically bridge between these length scales. Experimental methods for characterization and quantification of near-crack tip damage are also being developed. This paper focuses on several new methodologies in these areas and their application to understanding damage processes in polycrystalline metals. On-going and potential applications are also discussed.

Glaessgen, E. H.↗
NASA NTRS1982

Processed-induced defects in EFG ribbons

The defect structure of processed edge defined film-fed growth (EFG) silicon ribbons was studied using a variety of electron microscopic techniques. Comparison between the present results and previous studies on as-grown ribbons has shown that solar cell processing introduces additional defects into the ribbons. The creation of point defects during high temperature phosphorus diffusion induces dislocation climb, resulting in the formation of dislocation helices in the diffused layer.

Cunningham, B.↗
NASA NTRS2018

Sphene Emotional: How Titanite Was Shocked When the Dinosaurs Died

Accessory mineral geochronometers such as zircon, monazite, baddeleyite, and xenotime are increasingly being recognized for their ability to preserve diagnostic microstructural evidence of hypervelocity processes. However, little is known about the response of titanite to shock metamorphism, even though it is a widespread accessory phase and U-Pb geochronometer. Here we report two new mechanical twin modes in titanite within shocked granitoids from the Chicxulub impact structure, Mexico. Titanite grains in the newly acquired International Ocean Discovery Program Site expedition 364 M0077A core preserve multiple sets of polysynthetic twins, most commonly with composition planes (K1), = ~{1̅11}, and shear direction (η1) = <110>, and less commonly with the mode K1 = {130}, η1 = ~<522>. In some grains, {130} deformation bands have formed concurrently with shock twins, indicating dislocation glide with Burgers vector b = [341] can be active at shock conditions. Twinning of titanite in these modes, the presence of planar deformation features in shocked quartz, and lack of diagnostic shock microstructures in zircon in the same samples highlights the utility of titanite as a shock indicator for a shock pressure range between ~12 and ~17 GPa. Given the challenges of identifying ancient impact evidence on Earth and other bodies, microstructural analysis of titanite is here demonstrated to be a new avenue for recognizing impact deformation in materials where other impact evidence may be erased, altered, or did not manifest due to low shock pressure.

Timms, Nicholas E.↗
NASA NTRS2002

Glennan Microsystems Initiative

During the 2001-2002 award period, we performed research on Pt/Ti/bare 6H-SiC and bare 4H-SiC interfaces in order to identify their electronic properties as a function of surface preparation. The overall aim of this work is to optimize the electronic properties of metal contacts to SiC as well as the active SiC material itself as a function of surface preparation and subsequent processing. Initially, this work has involved identifying bare surface, subsurface, and metal induced gap states at the metal-SiC contact and correlating energies and densities of deep levels with Schottky barrier heights. We used low energy electron-excited nanoluminescence (LEEN) spectroscopy, X-ray photoemission spectroscopy (XPS), and Secondary Ion Mass Spectrometry (SIMS) in order to correlate electronic states and energy bands with chemical composition, bonding, and crystal structure. A major development has been the discovery of polytype transformations that occur in 4H-SiC under standard microelectronic process conditions used to fabricate SiC devices. Our results are consistent with the stacking fault generation, defect formation, and consequent degradation of SiC recently reported for state-of-the-art ABB commercial diodes under localized electrical stress. Our results highlight the importance of -optimizing process conditions and material properties - anneal times, temperatures and doping to control such structural changes within epitaxial SiC layers. Thus far, we have established threshold times and temperatures beyond which 4H-SiC exhibits 3C-SiC transformation bands for a subset of dopant concentrations and process conditions. On the basis of this temperature time behavior, we have been able to establish an activation energy of approximately 2.5 eV for polytype transformation and dislocation motion. Work continues to establish the fundamental mechanisms underlying the polytype changes and its dependence on material parameters.

Brillson, Leonard J.↗
NASA NTRS1985

Structural defects in crystalline silicon

The basic photovoltaic properties of a given crystalline silicon specimen seem to be governed by density and nature of two to three dimensional lattice defects. These are mainly generated by primary growth conditions as grain boundaries of more or less intrinsic character or second phase precipitates from supersaturated solutions of carbon or oxygen. Considerably high values of both solubility and diffusivity in connection with their abundance in common refractory material systems account for the predominance of the two particular elements. Unsaturated dislocations of different types very often can be seen as a consequence of the existence of more dimensional defects as described initially. The final performance of a solar cell is dependent of the concentration and distribution of recombination active centers in the different regions of this device. Typical representatives are fast diffusing transition metals in form of either single atoms or simple complexes. Their avoidance, annihilation, or removal is of great concern in different fields of electronic materials development.

Sirtl, E.↗
NASA NTRS1996

Nucleation and Crystallization of Globular Proteins: What we Know and What is Missing

Recently. much progress has been made in understanding the nucleation and crystallization of globular proteins, including the formation of compositional and structural crystal defects, Insight into the interactions of (screened) protein macro-ions in solution, obtained from light scattering, small angle X-ray scattering and osmotic pressure studies. can guide the search for crystallization conditions. These studies show that the nucleation of globular proteins is governed by the same principles as that of small molecules. However, failure to account for direct and indirect (hydrodynamic) protein interactions in the solutions results in unrealistic aggregation scenarios. Microscopic studies of numerous proteins reveal that crystals grow by the attachment of growth units through the same layer-spreading mechanisms as inorganic crystals. Investigations of the growth kinetics of hen-egg-white lysozyme (HEWL) reveal non-steady behavior under steady external conditions. Long-term variations in growth rates are due to changes in step-originating dislocation groups. Fluctuations on a shorter timescale reflect the non-linear dynamics of layer growth that results from the interplay between interfacial kinetics and bulk transport. Systematic gel electrophoretic analyses suggest that most HEWL crystallization studies have been performed with material containing other proteins at percent levels. Yet, sub-percent levels of protein impurities impede growth step propagation and play a role in the formation of structural/compositional inhomogeneities. In crystal growth from highly purified HEWL solutions, however, such inhomogeneities are much weaker and form only in response to unusually large changes in growth conditions. Equally important for connecting growth conditions to crystal perfection and diffraction resolution are recent advances in structural characterization through high-resolution Bragg reflection profiling and X-ray topography.

Rosenberger, F.↗
NASA NTRS1985

Electrical, structural and chemical characterization of Si sheet material

Web Dendritic Si ribbons are deformed under a well-defined four point bending stress. Since the mechanical properties of Si are known to depend on the 0 content of the material, 0 measurements using Fourier Transform Infrared Spectroscopy were done to determine a proper control sample of non-defected single crystal Si. Four point bending revealed a unique two step bending behavior for the Web Si ribbons. An initial theory for this behavior involves the interaction of the dislocations generated by the deformation with the central twin planes of the ribbons. Measurements showed a uniformly high 0 content for the Web Si ribbons, approximately 10 to the 18th power atoms/cu.cm. The Web samples had a much broader absorption peak at 9 microns than is usually seen for well-annealed single crystal Si. This broadening is thought to be related to stress in the Web Si ribbons. Two samples containing a known amount of residual stress support this hypothesis. Also, a shoulder on the infrared absorption peak associated with interstitial 0 in Si appears in the transmission vs. wavenumber plots for some of the Web samples. This shoulder has been associated with 0-vacancy complexes or with 0 at dislocations. The O content and configuration do not seem to correlate with the growth configuration of the Web Si ribbon.

Ast, D. G.↗
NASA NTRS1981

InGaAsP/InP laser development for single-mode, high-data-rate communications

Materials studies as well as general and specific device development were carried out in the InGaAsP system. A comparison was made of three standard methods of evaluating substrate quality by means of dislocation studies. A cause of reduced yield of good wafers, the pullover of melt from one bin to the next, has been analyzed. Difficulties with reproducible zinc acceptor doping have been traced to segregation of zinc in the In/Zn alloy used for the doping source. Using EBIC measurments, the pn junction was shown to drift in location depending on factors not always under control. An analysis of contact structures by SIMS showed that the depth to which the sintered Au/Zn contact penetrates into the structure is typically 0.13 microns, or well within the cap layer and out of the p-type cladding and thus not deleterious to laser prformance. The problem of single-mode laser development was investigated and it was shown to be related to the growth habit over four different possible substrate configurations. The fabrication of constricted double heterojunctions, mesa stripe buried heterostructures, and buried heterostructures was discussed, and measurements were presented on the device properties of single-mode buried heterostructure lasers. Results include single spectral line emission at 3 mW and a threshold current of 60 mA.

Ladany, I.↗
NASA NTRS2012

Reduction of Defects in Germanium-Silicon

Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Ge1-xSix crystals have been repeatedly grown detached in pBN crucibles. Detached-grown crystals exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction. Experiments have also been conducted to assess the effect of pressure differential across the meniscus in sealed crucibles. The experiments were in agreement with calculations which predicted that stable detachment will only occur in crucibles with a high wetting angle and over a relatively narrow range of pressure differential. Calculations also indicate that the conditions for stable detached growth are greatly expanded in a microgravity environment.

Volz, M. P.↗
NASA NTRS1974

Substituting telecommunications for travel - Feasible or desirable

This paper reviews recent advances in telecommunications and examines the detailed structure of travel to estimate the feasibility of substituting telecommunications for various travel objectives. The impact of travel is analyzed from a social, economic, energy, and pollution standpoint to assess the desirability of substitution. Perhaps 35-50% of the nation's travel could, in theory, be replaced by very advanced telecommunications (such as a much improved large-screen teleconferencing network), but public resistance would be massive. Much economic dislocation would result since, for example, over 25% of retail sales are travel-related. The energy savings would be modest since only 25% of the nation's energy is consumed by transportation. However, all pollution would be reduced substantially since transportation accounts for 75% of the carbon monoxide, 60% of the hydrocarbon, and 55% of the nitrogen oxide pollution in the nation. Problems related to the implementation of large-scale substitution are discussed.

Van Vleck, E. M.↗
NASA NTRS1959

Factors Affecting the Plasticity of Sodium Chloride, Lithium Fluoride, and Magnesium Oxide Single Crystals

A study was made of the relative magnitude of the effects of various factors on the ductility of single crystals of sodium chloride (NaCl), lithium fluoride (LiF), and magnesium oxide (MgO). Specimen treatments included water-polishing, varying cleavage rate, annealing, quenching, X-irradiation, surface coating, aging, and combinations of some of these treatments. The mechanical behavior of the crystals was studied in flexure and in compression, the latter study being performed at both constant strain rate and constant load. Etch-pit studies were carried out to provide some pertinent information on the results of pretreatment on the dislocation concentration and distribution in the vicinity of the surface. The load deformation curves for these ionic single crystals show an initial region of very low slope which proved to be due to anelastic deformation. The extent of initial anelastic deformation is modified by specimen pretreatment in a way that suggests that this deformation is the result of expansion of cleaved-in dislocation loops, which can contract on the removal of the stress. The effects of the various pretreatments on the load and deflection at fracture are in accord with the prediction one might make with regard to their effect on the nucleation of fatal surface cracks. For NaCl, increases in ductility are always accompanied by increases in strength. The creep constants for NaCl are a function of treatments which affect the bulk structure but are not a function of treatments which only affect the surface.

Stearns, Carl A.↗
NASA NTRS1992

Mechanism of slip and twinning

The objectives are to: (1) demonstrate the mechanisms of deformation in body centered cubic (BCC), face centered cubic (FCC), and hexagonal close-packed (HCP)-structure metals and alloys and in some ceramics as well; (2) examine the deformed microstructures (slip lines and twin boundaries) in different grains of metallic and ceramic specimens; and (3) study visually the deformed macrostructure (slip and twin bands) of metals and alloys. Some of the topics covered include: deformation behavior of materials, mechanisms of plastic deformation, slip bands, twin bands, ductile failure, intergranular fracture, shear failure, slip planes, crystal deformation, and dislocations in ceramics.

Rastani, Mansur↗
NASA NTRS2017

The Evolution of the Deformation Substructure in a Ni-Co-Cr Equiatomic Solid Solution Alloy

The equiatomic NiCoCr alloy exhibits an excellent combination of strength and ductility, even greater than the FeNiCrCoMn high entropy alloy, and also displays a simultaneous increase in strength and ductility with decreasing the testing temperature. To systemically investigate the origin of the exceptional properties of NiCoCr alloy, which are related to the evolution of the deformation substructure with strain, interrupted tensile testing was conducted on the equiatomic NiCoCr single-phase solid solution alloy at both cryogenic and room temperatures at five different plastic strain levels of 1.5%, 6.5%, 29%, 50% and 70%. The evolution of deformation substructure was examined using electron backscatter diffraction (EBSD), transmission Kikuchi diffraction (TKD), conventional transmission electron microscopy (CTEM), diffraction contrast imaging using STEM (DCI-STEM) and atomic resolution scanning transmission electron microscopy. While the deformation substructure mainly consisted of planar dislocation slip and the dissociation of dislocations into stacking faults at small strain levels (≤6.5%), at larger strain levels, additional substructures including nanotwins and a new phase with hexagonal close packed (HCP) lamellae also appeared. The volume fraction of the HCP lamellae increases with increasing deformation, especially at cryogenic temperature. First principles calculations at 0 K indicate that the HCP phase is indeed energetically favorable relative to FCC for this composition. The effects of the nanotwin and HCP lamellar structures on hardening rate and ductility at both cryogenic and room temperature are qualitatively discussed.

Twinning↗
NASA NTRS1982

Pre- and post-annealing of mechanical damage in silicon wafers

Basic properties of mechanical damage in silicon consisting of cracks and abrasion were studied using transmission electron microscopy. The crystallographic structure of mechanical damage was determined before and after high temperature annealing. The main findings include that stresses in silicon around crack tips are not plastically relieved at room temperature and that abrasion at room temperature introduces shear loops into the silicon. It was also found that cracks of micron size can be annealed out, specifically, if cleavage occurs on 111 planes. The healing products of such cracks are 60 deg and 90 deg dislocations. Submicron cracks transform into stacking faults during annealing. Likewise high concentrations of shear loops due abrasion were found to anneal into stacking faults. A one to one correlation between surface areas containing small cracks and stacking faults was made. Measurements of damage removal on silicon surfaces through chemical-mechanical etching techniques are presented. It is shown that silicon dioxide repolishes damaged silicon surfaces most effectively.

Schwottke, G. H.↗
NASA NTRS1993

Lattice-mismatched In(0.40)Al(0.60)As window layers for indium phosphide solar cells

The efficiency of indium phosphide (InP) solar cells is limited by its high surface recombination velocity (approximately 10(exp 7) cm/s). This might be reduced by a wide-bandgap window layer. The performance of InP solar cells with wide-bandgap (1.8 eV) lattice-mismatched In(0.40)Al(0.60)As as a window layer was calculated. Because the required window layer thickness is less than the critical layer thickness, growth of strained (pseudomorphic) layers without interfacial misfit dislocations should be possible. Calculations using the PC-lD numerical code showed that the efficiencies of baseline and optimized p(+)n (p-on-n) cells are increased to more than 22 and 24 percent, (air mass zero (AMO), 25 C), respectively for a lattice-mismatched In(0.40)Al(0.60)As window layer of 10-nm thickness. Currently, most cell development work has been focused on n(+)p (n-on-p) structures although comparatively little improvement has been found for n(+)p cells.

Jain, Raj K.↗