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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Recent advancements in chiral spintronics: from molecular-level insights to device applications. A prospect based on the interplay between physical and chemical properties of chiral systems

This review discusses recent advancements in chiral-based spin-electronic devices achieved using suitable combinations of organic, inorganic and hybrid materials. The focus is on how chirality can be effectively used to control spin in practical applications, particularly in spintronic sensors and consumer devices. Interestingly, the underlying mechanism for this control is the chiral-induced spin selectivity (CISS) effect, which links the structural chirality of a material to its spin-selective electronic transport properties. The CISS effect arises from the observation that charge transmission in chiral systems is spin selective. Experimental evidence suggests a relationship between electron spin and the structural handedness of the material. In conclusion, this unique structure-transport relationship can be exploited to design a wide range of spintronics devices, including memory, transistors, logic gates and molecular q-bits.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Electrical Interrogation of Thickness‐Dependent Multiferroic Phase Transitions in the 2D Antiferromagnetic Semiconductor NiI 2

Abstract 2D magnetic materials hold promise for quantum and spintronic applications. 2D antiferromagnetic materials are of particular interest due to their relative insensitivity to external magnetic fields and higher switching speeds compared to 2D ferromagnets. However, their lack of macroscopic magnetization impedes detection and control of antiferromagnetic order, thus motivating magneto‐electrical measurements for these purposes. Additionally, many 2D magnetic materials are ambient‐reactive and electrically insulating or highly resistive below their magnetic ordering temperatures, which imposes severe constraints on electronic device fabrication and characterization. Herein, these issues are overcome via a fabrication protocol that achieves electrically conductive devices from the ambient‐reactive 2D antiferromagnetic semiconductor NiI 2 . The resulting gate‐tunable transistors show band‐like electronic transport below the antiferromagnetic and multiferroic transition temperatures of NiI 2 , revealing a Hall mobility of 15 cm 2 V −1 s −1 at 1.7 K. These devices also allow direct electrical probing of the thickness‐dependent multiferroic phase transition temperature of NiI 2 from 59 K (bulk) to 28 K (monolayer).

2D magnets↗
DOE OSTI2022

Achieving American Leadership in the Semiconductors Supply Chain Factsheet

Semiconductors are a keystone technology that are essential for the operation of every electronic device, including those that are critical to a clean energy economy. The semiconductor industry has a complex, competitive, and highly integrated international supply chain in which the United States has historically enjoyed a dominant position, but where this position has been eroding over time. In 1995, 26% of global semiconductor manufacturing capacity was located in the United States; this had decreased to 10% by 2020. Investments in key semiconductor manufacturing technologies such as high-voltage power electronics, energy-efficient conventional devices, and advanced packaging point the way to secure a strong domestic semiconductor industrial base.

Source record↗
DOE OSTI2025

Distinct Surface and Bulk Morphology Due to Solvent Additive Effects in PM6 Conjugated Polymer Films

Depth dependent molecular orientation and crystalline structure in conjugated polymer thin films is critical for organic electronic device performance and is affected by solvent additive choice during processing. Here, in this work, we focus on the electron donor polymer PM6 and uncover how the solvent additive 1-chloronaphthalene (CN) affects the molecular orientation and the crystalline structure with near edge X-ray absorption fine structure (NEXAFS) spectroscopy and grazing-incidence wide-angle X-ray scattering (GIWAXS), respectively. By quantitatively comparing molecular and crystallite orientations, we find that CN induces distinct surface and bulk morphologies. The polymer conjugated plane orientation at the surface is unaffected by CN, while this orientation is strongly affected in the bulk. Further, we find differences in surface vs bulk crystalline coherence lengths and relative degrees of crystallinity. These insights help provide links between solvent additive and device performance and demonstrate the strengths of a quantitative approach for characterizing organic thin film morphology.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Electric current paths in a Si:P delta-doped device imaged by nitrogen-vacancy diamond magnetic microscopy

The recently-developed ability to control phosphorous-doping of silicon at an atomic level using scanning tunneling microscopy, a technique known as atomic precision advanced manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include where current flow is actually occurring in or near APAM structures as well as whether leakage currents are present. In general, detection and mapping of current flow in APAM structures are valuable diagnostic tools to obtain reliable devices in digital-enhanced applications. In this report, we used nitrogen-vacancy (NV) centers in diamond for wide-field magnetic imaging (with a few-mm field of view and micron-scale resolution) of magnetic fields from surface currents flowing in an APAM test device made of a P delta-doped layer on a Si substrate, a standard APAM witness material. We integrated a diamond having a surface NV ensemble with the device (patterned in two parallel mm-sized ribbons), then mapped the magnetic field from the DC current injected in the APAM device in a home-built NV wide-field microscope. The 2D magnetic field maps were used to reconstruct the surface current densities, allowing us to obtain information on current paths, device failures such as choke points where current flow is impeded, and current leakages outside the APAM-defined P-doped regions. Analysis on the current density reconstructed map showed a projected sensitivity of ~0.03 A m -1 , corresponding to a smallest-detectable current in the 200 μm wide APAM ribbon of ~6 μA. These results demonstrate the failure analysis capability of NV wide-field magnetometry for APAM materials, opening the possibility to investigate other cutting-edge microelectronic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Probing transport energies and defect states in organic semiconductors using energy resolved electrochemical impedance spectroscopy

Abstract Determining the relative energies of transport states in organic semiconductors is critical to understanding the properties of electronic devices and in designing device stacks. Futhermore, defect states are also highly important and can greatly impact material properties and device performance. Recently, energy‐resolved electrochemical impedance spectroscopy (ER‐EIS) is developed to probe both the ionization energy (IE) and electron affinity (EA) as well as sub‐bandgap defect states in organic semiconductors. Herein, ER‐EIS is compared to cyclic voltammetry (CV) and photoemission spectroscopies for extracting IE and EA values, and to photothermal deflection spectroscopy (PDS) for probing defect states in both polymer and molecular organic semiconductors. The results show that ER‐EIS determined IE and EA are in better agreement with photoemission spectroscopy measurements as compared to CV for both polymer and molecular materials. Furthermore, the defect states detected by ER‐EIS agree with sub‐bandgap features detected by PDS. Surprisingly, ER‐EIS measurements of regiorandom and regioregular poly(3‐hexylthiophene) (P3HT) show clear defect bands that occur at significantly different energies. In regioregular P3HT the defect band is near the edge of the occupied states while it is near the edge of the unoccupied states in regiorandom P3HT.

14 SOLAR ENERGY↗
DOE OSTI2020

Highly Emissive Semi-Ladder-Type Copolymers, Aggregation State, and Solution-Processed Organic Light-Emitting Transistor

An organic light-emitting transistor (OLET) integrates the logic function of a field-effect transistor (FET) with electroluminescence of a light-emitting diode (LED) into a single device. This has the potential to play an important role in smart displays, electrically pumped organic laser, and other flexible electronic devices. For achieving high-performance solution-processed OLET, three semiladder copolymers—TPTI-CC, TPTI-C, and TPTI-F—were developed in this study. It was found that variation in the chemical structure lead to significant differences in energy level, emission color, and intermolecular aggregation. High photoluminescence quantum yields (PLQY) was obtained in these three polymers. Solution-processed trilayered OLET devices were fabricated, which exhibited strong electroluminescence, balanced charge mobility, and external quantum efficiency (EQE) of 2.8%.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Dielectrophoresis-Based Positioning of Carbon Nanotubes for Wafer-Scale Fabrication of Carbon Nanotube Devices

In this paper, we report the wafer-scale fabrication of carbon nanotube field-effect transistors (CNTFETs) with the dielectrophoresis (DEP) method. Semiconducting carbon nanotubes (CNTs) were positioned as the active channel material in the fabrication of carbon nanotube field-effect transistors (CNTFETs) with dielectrophoresis (DEP). The drain-source current (IDS) was measured as a function of the drain-source voltage (VDS) and gate-source voltage (VGS) from each CNTFET on the fabricated wafer. The IDS on/off ratio was derived for each CNTFET. It was found that 87% of the fabricated CNTFETs was functional, and that among the functional CNTFETs, 30% of the CNTFETs had an IDS on/off ratio larger than 20 while 70% of the CNTFETs had an IDS on/off ratio lower than 20. The highest IDS on/off ratio was about 490. The DEP-based positioning of carbon nanotubes is simple and effective, and the DEP-based device fabrication steps are compatible with Si technology processes and could lead to the wafer-scale fabrication of CNT electronic devices.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2024

Flash healing of laser-induced graphene

The advancement of laser-induced graphene (LIG) technology has streamlined the fabrications of flexible graphene devices. However, the ultrafast kinetics triggered by laser irradiation generates intrinsic amorphous characteristics, leading to high resistivity and compromised performance in electronic devices. Healing graphene defects in specific patterns is technologically challenging by conventional methods. Herein, we report the rapid rectification of LIG’s topological defects by flash Joule heating in milliseconds (referred to as F-LIG), whilst preserving its overall structure and porosity. The F-LIG exhibits a decreased I D /I G ratio from 0.84 – 0.33 and increased crystalline domain from Raman analysis, coupled with a 5-fold surge in conductivity. Pair distribution function and atomic-resolution imaging delineate a broader-range order of F-LIG with a shorter C-C bond of 1.425 Å. The improved crystallinity and conductivity of F-LIG with excellent flexibility enables its utilization in high-performance soft electronics and low-voltage disinfections. Notably, our F-LIG/polydimethylsiloxane strain sensor exhibits a gauge factor of 129.3 within 10% strain, which outperforms pristine LIG by 800%, showcasing significant potential for human-machine interfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Superconducting diode effect via conformal-mapped nanoholes

A superconducting diode is an electronic device that conducts supercurrent and exhibits zero resistance primarily for one direction of applied current. Such a dissipationless diode is a desirable unit for constructing electronic circuits with ultralow power consumption. However, realizing a superconducting diode is fundamentally and technologically challenging, as it usually requires a material structure without a centre of inversion, which is scarce among superconducting materials. Here, we demonstrate a superconducting diode achieved in a conventional superconducting film patterned with a conformal array of nanoscale holes, which breaks the spatial inversion symmetry. We showcase the superconducting diode effect through switchable and reversible rectification signals, which can be three orders of magnitude larger than that from a flux-quantum diode. The introduction of conformal potential landscapes for creating a superconducting diode is thereby proven as a convenient, tunable, yet vastly advantageous tool for superconducting electronics. This could be readily applicable to any superconducting materials, including cuprates and iron-based superconductors that have higher transition temperatures and are desirable in device applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Flexible Copper Metal Circuits via Desktop Laser Printed Masks

A novel process is demonstrated that produces patterns of electrically conductive copper on a flexible polyimide film substrate using standard desktop laser printed toner and near room temperature aqueous chemistry. The laser toner acts as a mask to selectively block the ion exchange self-metallization (IESM) reduction reaction that forms nanoscale silver or palladium coatings at the polyimide surface. The silver or palladium IESM coating is then used as a catalyst for electroless deposition of copper. Under appropriate conditions, the copper is deposited selectively on top of the catalyst layer. The resulting copper layer has a measured sheet resistance as low as 0.3 Ohms/sq. Electrical isolation was measured between copper traces spaced as close as 300 microns, and high conductivity was measured along traces with widths as low as 200 microns. The minimum pattern size appears to be limited primarily by the resolution of the laser toner pattern, as the IESM metal layer was observed to follow the contours of individual toner particles. Here, the process avoids the use of high temperature, vacuum, and organic solvents and is thus suitable for very low cost prototyping or distributed manufacturing of simple electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Theoretical Insights for Improving the Schottky-Barrier Height at the Ga2O3/Pt Interface

In this work, we study the Schottky-barrier height (SBH) at the junction between ..beta..-Ga2O3 and platinum, a system of great importance for the next generation of high-power and high-temperature electronic devices. Specifically, we obtain interfacial atomic structures at different orientations using our structure-matching algorithm and compute their SBH using electronic structure calculations based on hybrid density-functional theory.

CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS,P↗
DOE OSTI2021

Ab initio electron dynamics in high electric fields: Accurate prediction of velocity-field curves

Electron dynamics in external electric fields governs the behavior of solid-state electronic devices. First-principles calculations enable precise predictions of charge transport in low electric fields. However, studies of high-field electron dynamics remain elusive due to a lack of accurate and broadly applicable methods. In this work, we develop an efficient approach to solve the real-time Boltzmann transport equation with both the electric field term and ab initio electron-phonon collisions. These simulations provide field-dependent electronic distributions in the time domain, allowing us to investigate both transient and steady-state transport in electric fields ranging from low to high (> 10 kV/cm). The broad capabilities of our approach are shown by computing nonequilibrium electron occupations and velocity-field curves in Si, GaAs, and graphene, obtaining results in quantitative agreement with experiment. Our approach sheds light on microscopic details of transport in high electric fields, including the dominant scattering mechanisms and valley occupation dynamics. Our results demonstrate quantitatively accurate calculations of electron dynamics in low to high electric fields, with broad application to power and micro-electronics, optoelectronics, and sensing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Assessing electrogenetic activation via a network model of biological signal propagation

Introduction: Molecular communication is the transfer of information encoded by molecular structure and activity. We examine molecular communication within bacterial consortia as cells with diverse biosynthetic capabilities can be assembled for enhanced function. Their coordination, both in terms of engineered genetic circuits within individual cells as well as their population-scale functions, is needed to ensure robust performance. We have suggested that “electrogenetics,” the use of electronics to activate specific genetic circuits, is a means by which electronic devices can mediate molecular communication, ultimately enabling programmable control. Methods: Here, we have developed a graphical network model for dynamically assessing electronic and molecular signal propagation schemes wherein nodes represent individual cells, and their edges represent communication channels by which signaling molecules are transferred. We utilize graph properties such as edge dynamics and graph topology to interrogate the signaling dynamics of specific engineered bacterial consortia. Results: We were able to recapitulate previous experimental systems with our model. In addition, we found that networks with more distinct subpopulations (high network modularity) propagated signals more slowly than randomized networks, while strategic arrangement of subpopulations with respect to the inducer source (an electrode) can increase signal output and outperform otherwise homogeneous networks. Discussion: We developed this model to better understand our previous experimental results, but also to enable future designs wherein subpopulation composition, genetic circuits, and spatial configurations can be varied to tune performance. We suggest that this work may provide insight into the signaling which occurs in synthetically assembled systems as well as native microbial communities.

Chun, Kayla↗
DOE OSTI2023

Rechargeable metal-metal alkaline batteries: Recent advances, current issues and future research strategies

Over the past few decades, remarkable advancement has been attained in the field of rechargeable metal–metal alkaline batteries (RABs). In terms of safety, energy density, charge-discharge capacity, and long-term storage capability, metal-metal RABs (e.g., Ni–Zn, Ni–Fe, Ni–Bi, Ni–MH, Ag–Zn, Co–Zn, Cu–Zn, and Bi–Zn systems) are contemplated as the promising energy storage devices for the applications in electric vehicles (EVs), hybrid EVs, grid-scale energy storage, as well as various implantable and wearable electronic devices. Especially, Ni-MH batteries become competitive with Li-ion batteries for EVs and hybrid EVs applications due to their high tolerance against mechanical abuse, stability under wide temperature ranges, and considerable charge/discharge capacity. Meanwhile, earlier works reviewed only specific topics, so, as a rapidly growing research topic, providing a deep understanding on metal–metal RABs is timely and worthwhile. So here, in this work, we discuss the electrochemistry of all metal-metal RABs, then full cell designing with their performance will be discussed thoroughly. Further, issues associated with the existing metal–metal RABs and corresponding improvement approaches will be provided for future advances in high-performance and reliable metal-metal RABs.

25 ENERGY STORAGE↗
DOE OSTI2023

Envisioning the Future Renewable and Resilient Energy Grids—A Power Grid Revolution Enabled by Renewables, Energy Storage, and Energy Electronics

Today’s power grids are facing tremendous challenges because of the ever-increasing power demand, system complexity, infrastructure cost, knowledge base, and policy and regulatory issues to achieve supply–demand power balance and resiliency with respect to more frequent extreme weather events and cyberattacks. It is particularly challenging when the transition toward 100% intermittent renewable energy sources is considered. Many countries are calling for building up more transmission and distribution lines to increase power delivery capacities. This article is an attempt to answer two urgent questions: Is more transmission and distribution infrastructure really needed to meet the increasing power demand? What kind of future grid infrastructure should we envision and build? This article attempts to answer these questions and proposes the concept of community-centric asynchronous renewable and resilient energy grids. By clearly differentiating the concepts of grid resilience and reliability, the importance of building resilient power electronics’ devices and robust system-level control algorithms to achieve 100% renewable energy integrated resilient grids is presented. To identify the shortcomings and propose advancements, power electronics’ technologies are categorized using the proposed concepts of natural source frequencies (NSf), energy storage, direct energy conversion/control and fault protection (DeCaFp), and high-efficiency energy consumption and buffering (heECaB) technology. The ability of networked microgrids to greatly reduce power outages and power system restoration time is demonstrated by leveraging robust decentralized and centralized control algorithms, identified through a comprehensive literature review. Future research areas are proposed to further enhance grid stability, controllability, cybersecurity, and protection against faults in the presence of 100% renewable sources by leveraging the advanced capabilities of NSf, DeCaFp, and heECaB devices and system-level control algorithms.

14 SOLAR ENERGY↗
DOE OSTI2020

Spin filtering and spin separation in 2D materials by topological spin Hall effect

The needs of high speed performance electronic devices for various applications require novel materials and new physical phenomena. For these purposes we propose to study new physical effects based on electron scattering on magnetic skyrmions and vortices distributed in a 2D ferromagnetic material. Herein, we show that the topological spin Hall effect can be efficiently employed for the filtering, switching, and separation of spin currents. For some values of the parameters (conduction electron concentrations, and skyrmion/vortex sizes) it is possible to separate Hall currents for different electron spin projections as it is like for different carrier charges (electrons and holes) in the normal Hall effect. The calculations are performed using the Boltzmann kinetic equation for the nonequilibrium distribution function and the Lippmann–Schwinger equation for the transition matrix in the whole range of the adiabaticity parameter. The spin filtering due to the skyrmion/vortex scattering can be several orders of magnitude more efficient in the narrow range of the electron concentrations than that of the ordinary ferromagnetic spin polarization in spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques

The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with subnanometer precision, typically for quantum physics experiments. This process, which we call atomic precision advanced manufacturing (APAM), dopes silicon beyond the solid-solubility limit and produces electrical and optical characteristics that may also be useful for microelectronic and plasmonic applications. However, scanned probe lithography lacks the throughput required to develop more sophisticated applications. In this work, we demonstrate and characterize an APAM device workflow where scanned probe lithography of the atomic layer resist has been replaced by photolithography. An ultraviolet laser is shown to locally and controllably heat silicon above the temperature required for hydrogen depassivation on a nanosecond timescale, a process resistant to under- and overexposure. STM images indicate a narrow range of energy density where the surface is both depassivated and undamaged. Modeling that accounts for photothermal heating and the subsequent hydrogen desorption kinetics suggests that the silicon surface temperatures reached in our patterning process exceed those required for hydrogen removal in temperature-programmed desorption experiments. A phosphorus-doped van der Pauw structure made by sequentially photodepassivating a predefined area and then exposing it to phosphine is found to have a similar mobility and higher carrier density compared with devices patterned by STM. Lastly, it is also demonstrated that photodepassivation and precursor exposure steps may be performed concomitantly, a potential route to enabling APAM outside of ultrahigh vacuum.

nanoscale devices↗