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At least 181 records · Page 10

Emergence of exchange bias and giant coercive field enhancement by internal magnetic frustration in La 0.67 Sr 0.33 MnO 3 thin films

We have studied the influence of controlled defects on the magnetic properties of La 0.67 Sr 0.33 MnO 3 (LSMO) thin films. We used 100 nm thick epitaxial LSMO films, which were grown on SrTiO 3 substrates and introduced stoichiometry changes and defects using oxygen ion irradiation through nanoporous alumina masks. Oxygen irradiation through the mask creates cascades of defects in spatially-modulated regions in the plane of the LSMO film. The magnetic properties of the samples were compared before and after the irradiation. We have found that irradiation reduces the ferromagnetic ordering temperature, decreases the total magnetization, enhances the coercivity, and induces exchange bias below 50 K. The coercivity enhancement is dramatically higher below 50 K and can be associated with exchange bias. These results can be explained by the formation of Mn-rich antiferromagnetic or ferrimagnetic phases within the bombarded regions that are exchange coupled to the non-irradiated - ferromagnetic host.

36 MATERIALS SCIENCE↗

Engineering of Ferroic Orders in Thin Films by Anionic Substitution

Multiferroics are a unique class of materials where magnetic and ferroelectric orders coexist. The research on multiferroics contributes significantly to the fundamental understanding of the strong correlations between different material degrees of freedom and provides an energy-efficient route toward the electrical control of magnetism. While multiple ABO 3 oxide perovskites are identified as being multiferroic, their magnetoelectric coupling strength is often weak, necessitating the material search in different compounds. Here, the observation of room-temperature multiferroic orders in multi-anion SrNbO 3-x N x thin films is reported. In these samples, the multi-anion state enables the room-temperature ferromagnetic ordering of the Nb d-electrons. Simultaneously, ferroelectric responses that originate from the structural symmetry breaking associated are found with both the off-center displacements of Nb and the geometric displacements of Sr, depending on the relative O-N arrangements within the Nb-centered octahedra. So findings not only diversify the available multiferroic material pool but also demonstrate a new multiferroism design strategy via multi-anion engineering.

thin-films↗

Impact of direct exchange coupling via the insulator on the magnetic tunnel junction based molecular spintronics devices with competing molecule induced inter-electrode coupling

The magnetic tunnel junction (MTJ) based molecular spintronics device (MTJMSD) approach is suitable for mass production. This approach provides solutions to fabrication difficulties related to reliably connecting molecular device elements to the ferromagnets (FMs). To producing MTJMSD, the molecular channels are bridged across the insulator of an MTJ testbed with exposed side edges. In an MTJMSD, two FMs are simultaneously connected by an insulator film and the molecular channels along the exposed sides. In our prior experimental studies, we observed that molecules could produce strong coupling between ferromagnets in the presence of the competing coupling via an insulator. In this paper, our Monte Carlo Simulation (MCS) was used to study the impact of coupling variation via insulator (a.k.a. Ji) on the magnetic properties of an MTJMSD. We studied the effect of Ji while varying the molecule induced antiferromagnetic exchange coupling. The ferromagnetic or antiferromagnetic nature and magnitude of Ji determined the resultant effect. Antiferromagnetic Ji enhanced the pre-existing antiferromagnetic molecular coupling effect. Ferromagnetic Ji competed with the opposite nature of antiferromagnetic molecular coupling. Our MCS may help to understand the impact of insulator thickness and defects on the molecular spintronics device performance and design process.

36 MATERIALS SCIENCE↗

Long-range magnetic order and relaxor ferroelectricity in a hexagonal high-entropy ferrite

Multiferroics that combine ferroelectricity and magnetic order are attractive for electronic and spintronic technologies, yet chemical disorder that promotes relaxor ferroelectricity usually suppresses long-range magnetic order. Here, we report entropy-stabilized relaxor multiferroicity in epitaxial hexagonal (Tb0.2Dy0.2Ho0.2Lu0.2Yb0.2)FeO3 thin films. Structural, magnetic, dielectric, and synchrotron spectroscopic measurements show the coexistence of relaxor ferroelectricity and long-range ferromagnetic order. We find that improper ferroelectricity remains robust against A-site configurational disorder, while the Fe sublattice preserves magnetic exchange. This separation of the microscopic origins of the polar and magnetic responses enables chemically disordered multiferroicity. Our results establish entropy engineering in hexagonal ferrites as a route toward multifunctional oxide thin films and provide a general design strategy for high-entropy multiferroics.

Miertschin, Duncan [Baylor University]↗

Interface-driven magnetic anisotropy in relaxed La 0.7 Sr 0.3 CrO 3 /La 0.7 Sr 0.3 MnO 3 heterostructures on MgO

We investigate the structural and magnetic properties of La 0.7 Sr 0.3 CrO 3 /La 0.7 Sr 0.3 MnO 3 (LSMO) heterostructures grown on (001)-oriented MgO by molecular beam epitaxy. Due to the large film-substrate lattice mismatch, strain relaxation is found to occur within the first 2–3 unit cells (uc) of the film as evidenced by reflection high energy electron diffraction and high-resolution synchrotron x-ray reciprocal space mapping. Furthermore, we find that the presence of the LSCO spacer and capping layers leads to ferromagnetism in ultra-thin LSMO layers with thicknesses of the order of 2 uc with the magnetic easy axis oriented in the film plane. Net magnetic moments of 1.4 and 2.4 μ B /Mn are measured for (2 uc LSCO/2 uc LSMO) and (2 uc LSCO/4 uc LSMO) superlattices, respectively, by superconducting quantum interference device magnetometry. The effective magnetic anisotropy of the relaxed (2 uc LSCO/4 uc LSMO) heterostructure is found to be an order of magnitude higher than bulk LSMO highlighting the critical role of interfacial interactions in tuning magnetic anisotropy at complex oxide interfaces.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Tuning spin excitations in magnetic films by confinement

Spin excitations of magnetic thin films are the founding element for novel transport concepts in spintronics, magnonics, and magnetic devices in general. While spin dynamics have been extensively studied in bulk materials, their behaviour in mesoscopic films is less known due to experimental limitations. Here, we employ Resonant Inelastic X-Ray Scattering to investigate the spin excitation spectrum in mesoscopic Fe films, from bulk-like down to 3 unit cells thick. In bulk-like samples, we find isotropic, dispersive ferromagnons consistent with the dispersion observed by neutron scattering in bulk single crystals. As the thickness is reduced, these ferromagnons survive and evolve anisotropically: renormalising to lower energies along the out-of-plane direction while retaining their dispersion in the in-plane direction. This thickness dependence is captured by simple Heisenberg model calculations accounting for the confinement in the out-of-plane direction through the loss of Fe bonds. Overall, our findings highlight the effects of mesoscopic scaling on spin dynamics and identify thickness as a knob for fine-tuning and controlling magnetic properties in films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Permanently Magnetized Insulating Thin-Film Devices by Reduction

A reduction-based manufacturing process for creating technologically important multilayer structures from lattice-matched ferromagnetic insulators and ferromagnetic conductors is reported. The process is demonstrated by growing a permanently magnetized double-layer structure, consisting of lattice-matched conducting (Ni,Co) and insulating (Ni 0.4 Co 0.6 ) 3 O 3 layers, through a single deposition cycle. The orientation of the metal cation network is preserved after reduction. Close-packing displacements of Ni and Co take place in such a manner that the in-plane hexagonal arrangement is preserved. This is critical for ensuring high-quality interfaces joining the layers. At room temperature the hysteresis loop is centered. At low temperature the oxide layer becomes ferrimagnetically ordered, accompanied by a shift of the hysteresis loop along the magnetic field axis. The shift is assigned to exchange bias phenomenon. Biaxial compressive strain is responsible for the required ferrimagnetic ordering. Finally, spin valves and closely related magnetoresistance random access memory and spin-transfer-torque magnetic random access memory devices are addressed as potential applications.

42 ENGINEERING↗

Tuning structural, transport, and magnetic properties of epitaxial SrRu O 3 through Ba substitution

The perovskite ruthenates (A RuO 3 , A=Ca, Ba, or Sr) exhibit unique properties owing to a subtle interplay of crystal structure and electronic-spin degrees of freedom. Here, in this study, we demonstrate an intriguing continuous tuning of crystal symmetry from orthorhombic to tetragonal (no octahedral rotations) phases in epitaxial SrRuO 3 achieved via Ba substitution (Sr 1-x Ba x RuO 3 with 0 ≤ x ≤ 0.7 ). An initial Ba substitution to SrRuO 3 not only changes the ferromagnetic properties, but also tunes the perpendicular magnetic anisotropy via flattening the Ru–O–Ru bond angle (to 180°), resulting in the maximum Curie temperature and an extinction of RuO 6 rotational distortions at x≈0.20. For x ≤ 0.2, the reduction of RuO 6 octahedral rotational distortion dominantly enhances the ferromagnetism in the system, though competing with the effect of the RuO 6 tetragonal distortion. Further increasing Ba substitution (x > 0.2) gradually enhances the tetragonal-type distortion, resulting in the tuning of Ru-4d orbital occupancy and suppression of ferromagnetism. Our results demonstrate that isovalent substitution of the A-site cations significantly and controllably impacts both electronic and magnetic properties of perovskite oxides.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Large anomalous Nernst and inverse spin-Hall effects in epitaxial thin films of kagome semimetal Mn 3 Ge

Synthesis of crystallographically well-defined thin films of topological materials is important for unraveling their mesoscale quantum properties and for device applications. Mn 3 Ge , an antiferromagnetic Weyl semimetal with a chiral magnetic structure on a kagome lattice, is expected to have enhanced Berry curvature around Weyl nodes near the Fermi energy, leading to large anomalous Hall/Nernst effects and a large spin-Hall effect. Using magnetron sputtering, we have grown epitaxial thin films of hexagonal D 0 19 Mn 3 Ge that are flat and continuous. Large anomalous Nernst and inverse spin-Hall effects are observed in thermoelectric and spin-pumping devices. The anomalous Nernst signal in our Mn 3 Ge films is estimated to be 0.1 μV/K and is comparable to that in ferromagnetic Fe, despite Mn 3 Ge having a weak magnetization of ~ 3.5 m μ B / Mn at room temperature. In this work, the spin-mixing conductance is 90.5 nm – 2 at the Py / Mn 3 Ge interface, and the spin-Hall angle in Mn 3 Ge is estimated to be about eight times of that in Pt.

36 MATERIALS SCIENCE↗

Low-Field EMR Studies of Permalloy Films and Gratings

Flat and profile-modulated permalloy films have been studied by the electron magnetic resonance (EMR) method. In addition to ferromagnetic and spin-wave resonances, the structures demonstrate low-field EMR signals of an unusual shape, which form a hysteresis loop in sweeping fields. The low-field signals are attributed to a fast reorientation of magnetic domains. The low-field EMR behavior is comparable to the behavior in magneto-dependent photovoltage previously observed in the optical experiments. The shapes of the loops and typical values of the switching fields depend on the profile modulation parameters confirming the possibility of controlling magnetic properties and the coupling of magnetic and optical effects with nanoscale geometry.

36 MATERIALS SCIENCE↗

Probing polarization-tunable sub-terahertz spin pumping in bimodal α-Fe 2 O 3 /Pt

Hematite (α-Fe 2 O 3 ) is an insulating antiferromagnet possessing a room temperature canted phase induced by the super-exchange Dzyaloshinskii-Moriya Interaction (DMI), resulting in enhanced spin pumping and spin transport over uniaxial antiferromagnets. In this work we resonantly excite the quasi-ferromagnetic (acoustic) and purely antiferromagnetic (optical) spin-dynamical modes in bulk and thin-film heterostructures of α-Fe 2 O 3 /Pt at room temperature, inducing inverse-spin-Hall-voltages up to 255 GHz. Following recent measurements of optical-mode spin-pumping in α-Fe 2 O 3 , we observe a novel and exotic microwave polarization mapping along with amplified spin-charge conversion in the optical branch and discuss the implications of layer thickness on acoustic and optical spin-modes. The results provide a deeper understanding of spin-wave selection rules for canted antiferromagnets and their potential use in nanoscale terahertz spintronics.

interfaces↗

Anomalous Hall effect in nanoscale structures of the antiferromagnetic Weyl semimetal Mn 3 Sn at room temperature

The magnetic Weyl semimetallic state in the chiral antiferromagnet Mn 3 Sn has attracted interest for its potential in memory technology. Despite vanishingly small magnetization, the material exhibits large transverse responses that can be electrically manipulated, similar to ferromagnets. Through deposition on heated Si/SiO 2 substrates, we have fabricated polycrystalline Mn 3 Sn films that have coarse surfaces, the thinner of which have a discontinuous structure comprised of grains with diameters of the order of 100 nm. Here we confirm that these grains retain the anomalous Hall effect arising in the time reversal symmetry broken chiral antiferromagnetic phase of Mn 3 Sn at room temperature by serially connecting the grains with an additional conducting layer. These results pave the path for the potential applications of nanoscale Mn 3 Sn systems, which could be useful in the development of energy efficient memory devices.

36 MATERIALS SCIENCE↗

Epitaxial Stabilization of Single-Crystal Multiferroic YCrO 3 Thin Films

We report on the growth of stoichiometric, single-crystal YCrO 3 epitaxial thin films on (001) SrTiO 3 substrates using pulsed laser deposition. X-ray diffraction and atomic force microscopy reveal that the films grew in a layer-by-layer fashion with excellent crystallinity and atomically smooth surfaces. Magnetization measurements demonstrate that the material is ferromagnetic below 144 K. The temperature dependence of dielectric permittivity shows a characteristic relaxor-ferroelectric behavior at T C = 375–408 K. A dielectric anomaly at the magnetic transition temperature indicates a close correlation between magnetic and electric order parameters in these multiferroic YCrO 3 films. These findings provide guidance to synthesize rare-earth, chromite-based multifunctional heterostructures and build a foundation for future studies on the understanding of magnetoelectric effects in similar material systems.

36 MATERIALS SCIENCE↗

Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride

Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magnetism. Here we show that the anomalous Hall effect in pristine Cr 2 Te 3 thin films manifests a unique temperature-dependent sign reversal at nonzero magnetization, resulting from the momentum-space Berry curvature as established by first-principles simulations. The sign change is strain tunable, enabled by the sharp and well-defined substrate/film interface in the quasi-two-dimensional Cr 2 Te 3 epitaxial films, revealed by scanning transmission electron microscopy and depth-sensitive polarized neutron reflectometry. This Berry phase effect further introduces hump-shaped Hall peaks in pristine Cr 2 Te 3 near the coercive field during the magnetization switching process, owing to the presence of strain-modulated magnetic layers/domains. The versatile interface tunability of Berry curvature in Cr 2 Te 3 thin films offers new opportunities for topological electronics.

36 MATERIALS SCIENCE↗

Magnetic multilayer edges in Bernal-stacked hexagonal boron nitride

Single-layer h-BN is known to have edges with unique magnetism; however, in the commonly fabricated multilayer AA'-h-BN, edge relaxations occur that create interlayer bonds and eliminate the unpaired electrons at the edge. Recently, a robust method of growing the unconventional Bernal-stacked h-BN (AB-h-BN) has been reported. Here, we use theoretical approaches to investigate the nitrogen-terminated zigzag edges in AB-h-BN that can be formed in a controlled fashion using a high-energy electron beam. We find that these "open"edges remain intact in bilayer and multilayer AB-h-BN, enabling researchers potentially to investigate these edge states experimentally. We also investigate the thermodynamics of the spin configurations at the edge by constructing a lattice model that is based on parameters extracted from a set of first-principles calculations. We find that the edge spins in neighboring layers interact very weakly, resulting in a sequence of independent spin chains in multilayer samples. By solving this model using Monte Carlo simulations, we can determine nm-scale correlation lengths at liquid-N 2 temperatures and lower. At low temperatures, these edges may be utilized in magnetoresistance and spintronics applications.

1-dimensional spin chains↗

Room-temperature terahertz anomalous Hall effect in Weyl antiferromagnet Mn 3 Sn thin films

Antiferromagnetic spin motion at terahertz (THz) frequencies attracts growing interests for fast spintronics, however, their smaller responses to external field inhibit device application. Recently the noncollinear antiferromagnet Mn 3 Sn, a Weyl semimetal candidate, was reported to show large anomalous Hall effect (AHE) at room temperature comparable to ferromagnets. Dynamical aspect of such large responses is an important issue to be clarified for future THz data processing. Here the THz anomalous Hall conductivity in Mn 3 Sn thin films is investigated by polarization-resolved spectroscopy. Large anomalous Hall conductivity Re σxyð Þ ω 20 Ω1cm1 at THz frequencies is clearly observed as polarization rotation. A peculiar temperature dependence corresponding to the breaking/recovery of symmetry in the spin texture is also discussed. Observation of the THz AHE at room temperature demonstrates the ultrafast readout for the antiferromagnetic spintronics using Mn3Sn, and will also open new avenue for studying nonequilibrium dynamics in Weyl antiferromagnets.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Thin-Film Stabilization and Magnetism of η -Carbide-Type Iron Nitrides

Transition-metal nitrides in ..eta..-carbide-type structures exhibit unusual bonding motifs and proximity to magnetic instabilities. Yet they remain unexplored in thin-film form due to the difficulty of stabilizing nitrogen-poor ternaries among competing phases. Here, we report the thin-film synthesis and phase-stability mapping of the ..eta..-nitride systems Fe-W-N and Fe-Mo-N. Amorphous Fe-M-N (M = W, Mo) combinatorial libraries deposited by reactive cosputtering crystallize upon rapid thermal annealing, enabling systematic identification of synthesis windows as a function of composition and annealing temperature. Using laboratory powder X-ray diffraction and synchrotron grazing incidence wide-angle X-ray scattering, we establish that Fe 3 Mo 3 N-based ..eta..-carbide phases form over a substantially broader compositional and thermal range than W-based compositions, where ..eta.. structures are stabilized only when the films are Fe-rich. These trends are rationalized using mixed chemical-potential vs composition phase diagrams that capture the narrow nitrogen chemical-potential stability of ..eta..-nitrides. Magnetic measurements reveal that ferromagnetism is induced in Fe-rich Fe 3.54 Mo 2.46 N with a small exchange-bias-like response that is absent in Fe 3 W 3 N-based compositions, highlighting the sensitivity of magnetic behavior to modest deviations from stoichiometry. This work establishes practical thin-film synthesis routes for ..eta..-nitride materials and demonstrates how composition can be tuned to access emergent magnetic phenomena in these complex nitrides.

36 MATERIALS SCIENCE↗