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At least 181 records · Page 10

Calibration of Germanium Resistance Thermometers

Largely completed thermometer-calibration cryostat and probe allows six germanium resistance thermometers to be calibrated at one time at superfluid-helium temperatures. In experiments involving several such thermometers, use of this calibration apparatus results in substantial cost savings. Cryostat maintains temperature less than 2.17 K through controlled evaporation and removal of liquid helium from Dewar. Probe holds thermometers to be calibrated and applies small amount of heat as needed to maintain precise temperature below 2.17 K.

Ladner, D.↗

Characterization of NTD germanium and ion-implanted Si bolometers at 0.3K and 0.1K

Bolometer elements were built and tested using NTD germanium and ion-implanted Si thermometer elements. The thermal links were made using aluminum wires and NbC(x)N(y) coated carbon fibers. The temperature dependence of the detector resistance, lead thermal conductivity, and heat capacity were measured. The dependence of the detector resistance on applied electric field was also measured. This, combined with the current-voltage curve for the detector, allowed the calculation of the detector responsivity. Known amounts of energy were deposited into the detector by allowing X-rays from the decay of Fe-55 to be thermalized in the detector. In the best-measured case, the predicted pulse height/measured height was 1.04 + or - .05. The noise at frequencies above 25 Hz in the NTD Ge was near that predicted by thermodynamics. The noise below 25 Hz has a 1/f character and may be in the carbon fiber/bolometer junction. The implanted detectors show some 1/f noise which depends on the total thermometer volume. Comparison between noise measurements and theory will be presented.

Moseley, H.↗

Analog/Digital System for Germanium Thermometer

Electronic system containing analog and digital circuits makes high-precision, four-wire measurements of resistance of each germanium resistance thermometer (GRT) in array of devices, using alternating current (ac) of 1 micro-A. At end measurement interval, contents of negative register subtracted from positive one, resulting in very-narrow-band synchronous demodulation of carrier wave and suppression of out-of-band noise. Microprocessor free to perform other duties after measurement complete. Useful in noisy terrestrial environments encountered in factories.

Woodhouse, Christopher↗

Properties of silicon-germanium thermoelectric alloys with additives

The paper reports the results of measurements (Seebeck and Hall coefficients, electrical resistivity, and thermal conductivity) on silicon-germanium (Si-20 at. pct Ge) alloy with boron phosphide, B(6.5)P) as an additive, prepared as described by McLane et al. (1986). The power factor (Seebeck coefficient squared divided by electrical resistivity) and the thermal conductivity of SeGe/B(6.5)P material were found to be lower than for the 'standard' SiGe (Si-22 at. pct Ge) material. However, no net improvement was achieved in the figure-of-merit of the sample tested. It is suggested that structural inhomogeneities, revealed by a SEM examination, might be responsible for this lack of improvement.

Mclane, George↗

Ductile-regime turning of germanium and silicon

Single-point diamond turning of silicon and germanium was investigated in order to clarify the role of cutting depth in coaxing a ductile chip formation in normally brittle substances. Experiments based on the rapid withdrawal of the tool from the workpiece have shown that microfracture damage is a function of the effective depth of cut (as opposed to the nominal cutting depth). In essence, damage created by the leading edge of the tool is removed several revolutions later by lower sections of the tool edge, where the effective cutting depth is less. It appears that a truly ductile cutting response can be achieved only when the effective cutting depth, or critical chip thickness, is less than about 20 nm. Factors such as tool rake angle are significant in that they will affect the actual value of the critical chip thickness for transition from brittle to ductile response. It is concluded that the critical chip thickness is an excellent parameter for measuring the effects of machining conditions on the ductility of the cut and for designing tool-workpiece geometry in both turning and grinding.

Blake, Peter N.↗

Infrared absorption study of neutron-transmutation-doped germanium

Using high-resolution far-infrared Fourier transform absorption spectroscopy and Hall effect measurements, the evolution of the shallow acceptor and donor impurity levels in germanium during and after the neutron transmutation doping process was studied. The results show unambiguously that the gallium acceptor level concentration equals the concentration of transmutated Ge-70 atoms during the whole process indicating that neither recoil during transmutation nor gallium-defect complex formation play significant roles. The arsenic donor levels appear at full concentration only after annealing for 1 h at 450 C. It is shown that this is due to donor-radiation-defect complex formation. Again, recoil does not play a significant role.

Park, I. S.↗

Gamma-ray observations of SN 1987A with an array of high-purity germanium detectors

A balloonborne gamma-ray spectrometer comprising an array of high-purity n-type germanium (HPGe) detectors surrounded by an active NaI(T1) collimator and Compton suppressing anticoincidence shield was flown on May 29-30, 1987. The average column depth of residual atmosphere in the direction of SN 1987A at float altitude was 6.3 g/sq cm during the observation. The 3-sigma upper limit obtained for the 1238-keV line from Co-56 is 0.0013 photons/sq cm s. The corresponding limit for the 847-keV line is 0.0017 photons/sq cm s.

Sandie, W. G.↗

A model for the high-temperature transport properties of heavily doped n-type silicon-germanium alloys

A model is presented for the high-temperature transport properties of large-grain-size, heavily doped n-type silicon-germanium alloys. Electron and phonon transport coefficients are calculated using standard Boltzmann equation expressions in the relaxation time approximation. Good agreement with experiment is found by considering acoustic phonon and ionized impurity scattering for electrons, and phonon-phonon, point defect, and electron-phonon scattering for phonons. The parameters describing electron transport in heavily doped and lightly doped materials are significantly different and suggest that most carriers in heavily doped materials are in a band formed largely from impurity states. The maximum dimensionless thermoelectric figure of merit for single-crystal, n-type Si(0.8)Ge(0.2) at 1300 K is estimated at ZT about 1.13 with an optimum carrier concentration of n about 2.9 x 10 to the 20th/cu cm.

Vining, Cronin B.↗

Proton-induced radiation damage in germanium detectors

High-purity germanium (HPGe) detectors will be used in future space missions for gamma-ray measurements and will be subject to interactions with energetic particles. To simulate this process, several large-volume n-type HPGe detectors were incrementally exposed to a particle fluence of up to 10 to the 8th protons/sq cm (proton energy: 1.5 GeV) at different operating temperatures (90 to 120 K) to induce radiation damage. Basic scientific and engineering data on detector performance were collected. During the incremental irradiation, the peak shape produced by the detectors showed a significant change from a Gaussian shape to a broad complex structure. After the irradiation, all detectors were thoroughly characterized by measuring many parameters. To remove the accumulated radiation damage, the detectors were stepwise-annealed at temperatures below 110 C, while kept in their specially designed cryostats. This study shows that n-type HPGe detectors can be used in charged-particle environments as high-energy resolution devices until a certain level of radiation damage is accumulated and that the damage can be removed at moderate annealing temperatures and the detector returned to operating condition.

Brueckner, J.↗

Sensitivity of LDEF foil analyses using ultra-low background germanium versus large NaI(T1) multidimensional spectrometers

Cobalt samples were analyzed for cosmic ray induced Co-60 with both an ultralow background germanium gamma ray spectrometer and with a large NaI(T1) multidimensional spectrometer using electronic anticoincidence shielding. Aluminum samples were analyzed for Na-22. The results are presented along with the relative sensitivities and precision afforded by the two methods.

Reeves, James H.↗

Isotopically enriched germanium detectors for astrophysical gamma-ray spectroscopy

A study is presented of the instrumental background in astrophysical gamma-ray spectrometers using isotopically enriched germanium detectors. Calculations show that the beta-decay background, which is the largest component between approximately 0.1 and 1.0 MeV in balloonborne and satellite spectrometers, is dominated by the activation of Ge-74. This component can be reduced by an order of magnitude using detectors enriched to more than 80 percent in (Ge-70). The predicted reduction in the total background for current balloonborne instruments is more than a factor of 1.7 between 0.2 and 1.0 MeV. For future satellite instruments, the reduction in this energy range is by more than a factor of 5.

Gehrels, Neil↗

Ultrasonic time-of-flight monitoring of the position of the liquid/solid interface during the Bridgman growth of germanium

Ultrasound has been used to track the movement of the solid/liquid interface during the vertical Bridgman growth of germanium. Digitally processed data representing the received ultrasonic signal indicated a time lag prior to crystal growth, and showed a growth rate close to the pulling rate of the furnace. No effect of the ultrasonic energy on the growth of the crystal or on the formation of defects was observed. The interface was located to within 0.3 mm in the presence of substantial temperature gradients. An extension of the work presented could lead to a tomographic reconstruction of the interface shape.

Carter, John N.↗

Germanium detector vacuum encapsulation

This paper describes an encapsulation technology that should significantly improve the viability of germanium gamma-ray detectors for a number of important applications. A specialized vacuum chamber has been constructed in which the detector and the encapsulating module are processed in high vacuum. Very high vacuum conductance is achieved within the valveless encapsulating module. The detector module is then sealed without breaking the chamber vacuum. The details of the vacuum chamber, valveless module, processing, and sealing method are presented.

Madden, N. W.↗

Sensitivity of LDEF foil analyses using ultra-low background germanium vs. large NaI(Tl) multidimensional spectrometers

Cobalt foils and stainless steel samples were analyzed for induced Co-60 activity with both an ultra-low background germanium gamma-ray spectrometer and with a large NaI(Tl) multidimensional spectrometer, both of which use electronic anticoincidence shielding to reduce background counts resulting from cosmic rays. Aluminum samples were analyzed for Na-22. The results, in addition to the relative sensitivities and precisions afforded by the two methods, are presented.

Reeves, James H.↗

The Germanium GAlactic Plane Patrol mission

The goal of the Germanium GAlactic Plane Patrol mission (GGAPP) is to provide a continuous monitor of the Galactic Plane (GP) for variable sources of gamma-ray lines. Potentially interesting sources include black hole candidates, X-ray binary systems, pulsars, gamma-ray bursts, and solar flares. The GGAPP instrument is an array of Ge detectors cooled by a mechanical refrigerator to achieve a spectral resolution of 2 keV at 1 MeV (1/500). A bismuth germanate (BGO) shield will restrict the field-of-view (FOV) to within 20 deg of the GP, and a modulation collimator system will locate strong sources to less than 0.3 deg in galactic longitude, provide a direct means of subtracting background, and mapping the diffuse emission from the GP. The spacecraft will be rotationally stabilized with the spin axis perpendicular to the GP such that the modulator scans in galactic longitude. A HEO or L1 orbit will keep GGAPP far away from the strong background produced by the Earth. GGAPP will provide a natural bridge between GRO and future missions such as INTEGRAL/NAE.

Tueller, Jack↗

Background suppression techniques in germanium detectors

A new generation of astrophysical gamma ray spectrometers employing germanium solid state detectors for precise energy measurement are currently being planned for spaceflight in the late 1990's and the early 21st century. Because the observations of weak celestial sources are carried out in an intense radiation environment, the key objective of instrument design is to find ways to reduce the background. The current state of the knowledge in this field is reviewed and the new hardware techniques under design and test are discussed. Many of these techniques have already been flight tested on balloon platforms. Recent results from some of these tests are presented. By carefully applying these techniques it should be possible to achieve sensitivities that are factors of 3 to 10 better than would be obtained for a conventional instrument of similar weight.

Gehrels, Neil↗

Neutron Transmutation Doped (NTD) germanium thermistors for sub-mm bolometer applications

Recent advances in the development of neutron transmutation doped (NTD) semiconductor thermistors fabricated from natural and controlled isotopic composition germanium are reported. The near ideal doping uniformity that can be achieved with the NTD process, the device simplicity of NTD Ge thermistors and the high performance of cooled junction field effect transistor preamplifiers led to the widespread acceptance of these thermal sensors in ground-based, airborne and spaceborne radio telescopes. These features made possible the development of efficient bolometer arrays.

Haller, E. E.↗

Charged Particle Induced Radiation damage of Germanium Detectors in Space: Two Mars Observer Gamma-Ray Detectors

The Mars Observer Gamma-Ray Spectrometer (MO GRS) was designed to measure gamma-rays emitted by the Martian surface. This gamma-ray emission is induced by energetic cosmic-ray particles penetrating the Martian surface and producing many secondary particles and gamma rays. The MO GRS consisted of an high-purity germanium (HPGe) detector with a passive cooler. Since radiation damage due to permanent bombardment of energetic cosmic ray particles (with energies up to several GeV) was expected for the MO GRS HPGe crystal, studies on radiation damage effects of HPGe crystals were carried on earth. One of the HPGe crystals (paradoxically called FLIGHT) was similar to the MO GRS crystal. Both detectors, MO GRS and FLIGHT, contained closed-end coaxial n-type HPGe crystals and had the same geometrical dimensions (5.6 x 5.6 cm). Many other parameters, such as HV and operation temperature, differed in space and on earth, which made it somewhat difficult to directly compare the performance of both detector systems. But among other detectors, detector FLIGHT provided many useful data to better understand radiation damage effects.

Bruekner, J.↗