Atomic Layer Deposition of Pt on the Surface Deactivated by Fluorocarbon Implantation: Investigation of the Growth Mechanism
Selective atomic layer deposition (ALD) using surface-controlled reactivity is attracting a great deal of attention as a simple bottom-up patterning process that can provide both continued dimensional scaling and accurate pattern placement for next-generation nanoelectronics. Previously, we reported topographically selective deposition through Pt ALD using a MeCpPtMe 3 precursor and an O 2 counter reactant on fluorocarbon (CF x )-modified surfaces; however, gradual loss of selectivity in the CF x -modified regions was observed during the Pt ALD process. This work develops a fundamental understanding of the microscopic growth mechanisms of Pt ALD on the CF x -modified surface using a combination of experimental analyses and theoretical methods. The Pt growth characteristics on the CF x surface are investigated within a temperature window from 225 to 350 °C, and the results show a sharp sensitivity to growth temperature, with significant Pt growth occurring at temperatures above 300 °C. Through density functional theory (DFT) calculations, the reaction energies for adsorption of oxygen and the MeCpPtMe 3 precursor as well as formation of reaction products of CF x degradation are determined. Based on experimental results in conjunction with the DFT calculations, we show that while lower temperature Pt ALD (<300 °C) on CF x -modified surfaces can be significantly retarded because of a lack of MeCpPtMe 3 chemisorption, the surface reaction pathways for Pt ALD on CF x -modified surfaces at temperatures above 300 °C can proceed through oxygen adsorption and CF 4 desorption followed by Pt nucleation in CF x -degraded regions.