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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS2008

The Effects of Low Dose-Rate Ionizing Radiation on the Shapes of Transients in the LM124 Operational Amplifier

Shapes of single event transients (SETs) in a linear bipolar circuit (LM124) change with exposure to total ionizing dose (TID) radiation. SETs shape changes are a direct consequence of TID-induced degradation of bipolar transistor gain. A reduction in transistor gain causes a reduction in the drive current of the current sources in the circuit, and it is the lower drive current that most affects the shapes of large amplitude SETs.

Buchner, Stephen↗
DOE OSTI2026

Material-dependent photon ionizing radiation effects in Si and GaAs PIN diodes: A numerical investigation

We present a finite-element drift-diffusion-Poisson model in the Multiphysics Object-Oriented Simulation Environment (MOOSE) framework to compare the radiation response of silicon (Si) and gallium arsenide (GaAs) PIN diodes under high-energy photon irradiation. The model solves coupled carrier continuity and Poisson’s equations with Shockley-Read-Hall recombination, and is verified against standard analytical J-V behavior. Using a simplified 1D geometry with ideal Ohmic contacts, we quantify device response under forward and reverse bias with a 100 MeV photon flux. Under forward bias, Si exhibits markedly greater radiation sensitivity than GaAs, including larger increases in current density, stronger local field and carrier-product perturbations, and higher recombination. Under reverse bias, GaAs shows larger radiation-induced photocurrent and broader current-density peaks near junctions, indicating an advantage for photodetection. Integrated steady-state recombination is consistently higher in Si across voltages. Under periodic photon pulses, GaAs produces higher-amplitude photoresponse and settles more rapidly than Si. These results highlight material-dependent trade-offs for radiation-tolerant, high-speed optoelectronics and provide guidance for selecting PIN architectures in aerospace, nuclear, and high-energy physics environments.

36 MATERIALS SCIENCE↗
NASA NTRS2012

New Modeling Approaches to Study DNA Damage by the Direct and Indirect Effects of Ionizing Radiation

DNA is damaged both by the direct and indirect effects of radiation. In the direct effect, the DNA itself is ionized, whereas the indirect effect involves the radiolysis of the water molecules surrounding the DNA and the subsequent reaction of the DNA with radical products. While this problem has been studied for many years, many unknowns still exist. To study this problem, we have developed the computer code RITRACKS [1], which simulates the radiation track structure for heavy ions and electrons, calculating all energy deposition events and the coordinates of all species produced by the water radiolysis. In this work, we plan to simulate DNA damage by using the crystal structure of a nucleosome and calculations performed by RITRACKS. The energy deposition events are used to calculate the dose deposited in nanovolumes [2] and therefore can be used to simulate the direct effect of the radiation. Using the positions of the radiolytic species with a radiation chemistry code [3] it will be possible to simulate DNA damage by indirect effect. The simulation results can be compared with results from previous calculations such as the frequencies of simple and complex strand breaks [4] and with newer experimental data using surrogate markers of DNA double ]strand breaks such as . ]H2AX foci [5].

Plante, Ianik↗
NASA NTRS1995

New upper limits on the local metagalactic ionizing radiation density

We have obtained H-alpha observations with the Maryland-Caltech Fabry-Perot Spectrometer attached to the Cassegrain focus of the 1.5 m telescope at Palomer Observatory in order to set limits on the number of ionizing photons from the local metagalactic radiation field. We have observed the SW component of the Haynes-Giovanelli cloud H I 1225+01, an intergalactic cloud which should be optimum for measuring the metagalactic flux because it is nearly opaque to ionizing photons, it does not appear to be significantly shielded from the metagalactic radiation field, and the limits on embedded or nearby ionizing sources are unusually low. For the area of the cloud with an H I column density greater than 10(exp 19)/sq cm we set a 2 sigma limit of 1.1 x 10(exp -19) ergs/sq cm/s/sq arcsec (20 mR) for the surface brightness of diffuse H-alpha. This implies a 2 sigma upper limit on the incident one-sided ionizing flux of Phi(sub ex) is less than 3 x 10(exp 4)/sq cm/s. For a radiation field of the form J(sub nu) is approximately nu(exp -1.4), this yields a firm 2 sigma upper limit on the local metagalactic photoionization rate of Gamma is less than 2 x 10(exp -13)/s, and an upper limit for the radiation field J(sub nu) at the Lyman limit of J(sub nu0) is less than 8 x 10(exp -23) ergs/sq cm/Hz/sr. We discuss previous efforts to constrain the metagalactic ionizing flux using H-alpha surface brightness observations and also other methods, and conclude that our result places the firmest upper limit on this flux. We also observed the 7 min diameter region centered on 3C 273 in which H-alpha emission at a velocity of approximately 1700 km/s was initially reported by Williams and Schommer. In agreement with T. B. Williams (private communication) we find the initial detection was spurious. We obtain a 2 sigma upper limit of 1.8 x 10(exp -19) ergs/sq cm/s/sq arcsec (32 mR) for the mean surface brightness of diffuse H-alpha, about a factor of 6 below the published value.

Vogel, Stuart N.↗
NASA NTRS1977

SEM analysis of ionizing radiation effects in linear integrated circuits

A successful diagnostic technique was developed using a scanning electron microscope (SEM) as a precision tool to determine ionization effects in integrated circuits. Previous SEM methods radiated the entire semiconductor chip or major areas. The large area exposure methods do not reveal the exact components which are sensitive to radiation. To locate these sensitive components a new method was developed, which consisted in successively irradiating selected components on the device chip with equal doses of electrons /10 to the 6th rad (Si)/, while the whole device was subjected to representative bias conditions. A suitable device parameter was measured in situ after each successive irradiation with the beam off.

Stanley, A. G.↗
NASA NTRS1992

Anisotropic ionizing radiation in Seyfert galaxies. I - The extended narrow-line region in Markarian 573

The morphology, kinematics, and ionization state of the nuclear extended narrow-line region (ENLR) of the Seyfert 2 galaxy Mrk 573 are studied using narrow-band images of a grid of long-slit spectra. The entire ENLR is mapped spectroscopically, and velocity structure is studied. The velocity field map shows a typical galactic rotation picture with some important deviations. A simple geometric model, in accordance with the 'unified schemes', is employed to study the effects of various parameters of the observed picture. The best match is achieved when a biconical radiation field illuminates the ISM of the host galaxy that takes part in a normal galaxy rotation but also has radial motions close to the nucleus. The emission-line images reveal an ENLR elongated along the radio axis in the northwest-southeast direction, but a map of the flux ratio forbidden O III 5007/(H-alpha + forbidden N II) shows a different structure, with the highest excitation peak offset by about 4 arcsec along the radio axis to the southeast.

Tsvetanov, Zlatan↗
NASA NTRS1995

Image analysis used to count and measure etched tracks from ionizing radiation

We have developed techniques to use digitized scanning electron micrographs and computer image analysis programs to measure track densities in lunar soil grains and plastic dosimeters. Tracks in lunar samples are formed by highly ionizing solar energetic particles and cosmic rays during near surface exposure on the Moon. The track densities are related to the exposure conditions (depth and time). Distributions of the number of grains as a function of their track densities can reveal the modality of soil maturation. We worked on two samples identified for a consortium study of lunar weathering effects, 61221 and 67701. They were prepared by the lunar curator's staff as polished grain mounts that were etched in boiling 1 N NaOH for 6 h to reveal tracks. We determined that backscattered electron images taken at 10 percent contrast and approximately 50 percent brightness produced suitable high contrast images for analysis. We used the NIH Image program to cut out areas that were unsuitable for measurement such as edges, cracks, etc. We ascertained a gray-scale threshold of 25 to separate tracks from background. We used the computer to count everything that was two pixels or greater in size and to measure the area to obtain track densities. We found an excellent correlation with manual measurements for track densities below 1 x 10(exp 8) cm(exp -2). For track densities between 1 x 10(exp 8) cm(exp -2) to 1 x 10(exp 9) cm(exp -2) we found that a regression formula using the percentage area covered by tracks gave good agreement with manual measurements. We determined the track density distributions for 61221 and 67701. Sample 61221 is an immature sample, but not pristine. Sample 67701 is a submature sample that is very close to being fully mature. Because only 10 percent of the grains have track densities less than 10(exp 9) cm(exp -2), it is difficulty to determine whether the sample matured in situ or is a mixture of a mature and a submature soil. Although our analysis of plastic dosimeters is at an early stage of development, results are encouraging. The dosimeter was etched in 6.25 N NaOH at 70 deg C for 16 h. We took 200x secondary electron images of the sample and used the NIH Image software to count and measure major and minor diameters of the etched tracks. We calculated the relative track etch rate from a formula that relates it to the major and minor diameters. We made a histogram of the number of tracks versus their relative etch rate. The relative track etching rate is proportional to the linear energy transfer of the particle. With appropriate calibration experiments, the histogram could be used to calculate the radiation dose.

Blanford, George E.↗
NASA NTRS1990

Accretion tori and cones of ionizing radiation in Seyfert galaxies

The photoionization of extended narrow-line regions in Seyfert galaxies by the radiation produced in a thick accretion disk is studied. The emission-line spectrum is calculated for a range of black hole masses, varying the values of the ionization parameter and the disk size. It is found that models with a million solar masses fit observations of very large accretion disk sizes, while models with 10 million solar masses fit them better with smaller disks. The latter models are preferable since they have lower super-Eddington accretion rates.

Acosta-Pulido, Jose A.↗
NASA NTRS1993

The ionizing radiation of Seyfert 2 galactic nuclei

We report the discovery of a nonrandom trend in the dispersion of emission-line intensity ratios for Seyfert 2 galaxies. The sense of this pattern suggests the influence of a single physical parameter, the hardness of the ionizing continuum, which controls the heating energy per ionizing photon. We compare the observed line ratios with new photoionization calculations and find that the observed distributions can be reproduced if the ionizing continuum is parametrized by a power law. Our results also suggest an inverse correlation between luminosity and continuum hardness for Seyfert 2 nuclei; if true, this trend extends a similar pattern known in quasars and Seyfert 1 galaxies to active galactic nuclei of lower luminosity. Samples of Seyfert 2 nuclei with improved selection uniformity are desirable for elaboration of these findings.

Ho, Luis C.↗
NASA NTRS2023

Ionizing Radiation Effects on Hole Collection Backside-Illuminated P-Type Deep-Trench Pinned Photo-MOS Pixels under Image Acquisition

Dark current degradation, origins, and annealing behavior after x-ray irradiation are studied in a P-type, hole collecting, backside-illuminated image sensor currently being developed at STMicroelectronics and based on deep-trenched photo-MOS pixels. Different biasing conditions during irradiation, i.e. grounded or biased and sequenced, are compared. The dark current increase with total ionizing dose (TID) and the dark current annealing behavior seem to be driven by the backside interface between the P-epitaxy of the pixels and the ONO stack. Despite still being under development, this pixel architecture already exhibits both very good electro-optical performance and a better radiation hardness than pinned photodiode-based CMOS Image sensors that benefit from the same advanced CIS processing technologies. At high total dose range, the photogate challenges custom Radiation-Hardened-by-Design photodiodes by exhibiting a comparable radiation tolerance while bringing new features such as high-resolution or Correlated Double Sampling.

CMOS Image Sensor (CIS)↗
NASA NTRS1984

Ionospheric Absorption on 1539 Khz in Relation to Solar Ionizing Radiation

Radio wave absorption data on 1539 kHz for the summer period of 1978 to 1980 are considered in relation to variations of solar X-ray and L-alpha radiation. It is shown that under non-flare conditions L-alpha dominates in controlling absorption and that X-rays contribute about 10% to the total absorption. Optimum regression equations show that absorption is proportional to the m-th power of ionizing flux where m 1. The role of correcting L-alpha values, measured by the AE-E satellite, is discussed.

Boska, J.↗
NASA NTRS1988

High-resolution emission-line imaging of Seyfert galaxies. I - Observations. II - Evidence for anisotropic ionizing radiation

A CCD direct imaging survey of 11 Seyfert galaxies with a mean seeing of 1.3 arcsec FWHM is presented. It is found that the major axes and spatial scales of the circumnuclear emission-line gas are very similar to those of the radio continuum sources. In the second part, this close connection between thermal and relativistic gases is examined. A scenario is proposed in which the radio jets and plasmoids shock, accelerate, and compress ambient and entrained gas, with the dominant source of ionization being the nonstellar nuclear UV continuum.

Haniff, Christopher A.↗
NASA NTRS1994

Computer image analysis of etched tracks from ionizing radiation

I proposed to continue a cooperative research project with Dr. David S. McKay concerning image analysis of tracks. Last summer we showed that we could measure track densities using the Oxford Instruments eXL computer and software that is attached to an ISI scanning electron microscope (SEM) located in building 31 at JSC. To reduce the dependence on JSC equipment, we proposed to transfer the SEM images to UHCL for analysis. Last summer we developed techniques to use digitized scanning electron micrographs and computer image analysis programs to measure track densities in lunar soil grains. Tracks were formed by highly ionizing solar energetic particles and cosmic rays during near surface exposure on the Moon. The track densities are related to the exposure conditions (depth and time). Distributions of the number of grains as a function of their track densities can reveal the modality of soil maturation. As part of a consortium effort to better understand the maturation of lunar soil and its relation to its infrared reflectance properties, we worked on lunar samples 67701,205 and 61221,134. These samples were etched for a shorter time (6 hours) than last summer's sample and this difference has presented problems for establishing the correct analysis conditions. We used computer counting and measurement of area to obtain preliminary track densities and a track density distribution that we could interpret for sample 67701,205. This sample is a submature soil consisting of approximately 85 percent mature soil mixed with approximately 15 percent immature, but not pristine, soil.

Blanford, George E.↗
NASA NTRS2016

Photoelectrons and Solar Ionizing Radiation at Mars: Predictions Versus MAVEN Observations

Understanding the evolution of the Martian atmosphere requires knowledge of processes transforming solar irradiance into thermal energy well enough to model them accurately. Here we compare Martian photoelectron energy spectra measured at periaps is by Mars Atmosphere and Volatile Evolution MissioN (MAVEN) with calculations made using three photoelectron production codes and three solar irradiance models as well as modeled and measured CO2 densities. We restricted our comparisons to regions where the contribution from solar wind electrons and ions were negligible. The two intervals examined on 19 October 2014 have different observed incident solar irradiance spectra. In spite of the differences in photoionization cross sections and irradiance spectra used, we find the agreement between models to be within the combined uncertainties associated with the observations from the MAVEN neutral density, electron flux, and solar irradiance instruments.

solar ionizing↗
DOE OSTI2024

Spectroscopic Measurements and Models of Energy Deposition in the Substrate of Quantum Circuits by Natural Ionizing Radiation

Naturally occurring background radiation is a potential source of correlated decoherence events in superconducting qubits that will challenge error-correction schemes. In order to characterize the radiation environment in an unshielded laboratory representative of superconducting qubits’ environments, we performed broadband, spectroscopic measurements of background radiation events inside a millikelvin refrigerator. The spectrometer was designed to mimic the size and composition of a quantum circuit. Specifically, we measured the background radiation spectra in silicon substrates of two thicknesses, 500 and 1500 µm, and one area, 25 mm 2 . The observed spectra span energies from a few kilo-electron-volts up to nearly 10 MeV, are nearly featureless, and decrease in intensity by a factor of 40 000 between 100 keV and 3 MeV for the 500-µm substrate. We integrate the spectra to obtain the average event rates and deposited power levels. These quantities correspond to a rate of 0.023 events per second and a power of 4.9 keV s -1 , when counting events that deposit at least 40 keV for the 500-µm-thick substrate. We find that the cryogenic measurements are in good agreement with predictions based on simple measurements of the terrestrial gamma-ray flux outside the refrigerator, published models of cosmic-ray fluxes, a crude model of the cryostat, and radiation-transport simulations. This model requires no free parameters to predict the background radiation spectra in the silicon substrates. The agreement between measurements and predictions demonstrates that the model we present can be used to assess the relative contributions of terrestrial and cosmic-ray sources to background radiation interactions in silicon substrates of varying thickness. These spectroscopic measurements are performed with a novel combination of superconducting microresonators located on micromachined silicon islands that define the interaction volume with background radiation. The resonators transduce deposited energy to a readily detectable electrical signal. Microresonator readout closely resembles dispersive superconducting qubit readout, so similar devices—with or without micromachined islands—are suitable for integration with superconducting quantum circuits as detectors for background radiation events. For our specific laboratory conditions, we find that gamma-ray emissions from radioisotopes are responsible for the majority of events that deposit E < 1 ⁢Me⁢V. We present results demonstrating that the background radiation spectrum contains relevant contributions from cosmic-ray particles other than muons, particularly a tail of multi-mega-electron-volt events due to protons and neutrons. These observations suggest several paths to reducing the impact of background radiation on quantum circuits, supported by an empirically validated model for generating reliable predictions of radiation interactions with silicon substrates.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗