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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10

Electromagnetic Radiation Effects on MgO-Based Magnetic Tunnel Junctions: A Review

Magnetic tunnel junctions (MTJs) have been widely utilized in sensitive sensors, magnetic memory, and logic gates due to their tunneling magnetoresistance. Moreover, these MTJ devices have promising potential for renewable energy generation and storage. Compared with Si-based devices, MTJs are more tolerant to electromagnetic radiation. In this review, we summarize the functionalities of MgO-based MTJ devices under different electromagnetic irradiation environments, with a focus on gamma-ray radiation. We explore the effects of these radiation exposures on the MgO tunnel barriers, magnetic layers, and interfaces to understand the origin of their tolerance. This review enhances our knowledge of the radiation tolerance of MgO-based MTJs, improves the design of these MgO-based MTJ devices with better tolerances, and provides information to minimize the risks of irradiation under various irradiation environments. This review starts with an introduction to MTJs and irradiation backgrounds, followed by the fundamental properties of MTJ materials, such as the MgO barrier and magnetic layers. Then, we review and discuss the MTJ materials and devices’ radiation tolerances under different irradiation environments, including high-energy cosmic radiation, gamma-ray radiation, and lower-energy electromagnetic radiation (X-ray, UV–vis, infrared, microwave, and radiofrequency electromagnetic radiation). In conclusion, we summarize the radiation effects based on the published literature, which might benefit material design and protection.

42 ENGINEERING↗

Electron beam irradiation of thinned backside illuminated CCDs

The physical properties of backside illuminated surface channel CCD arrays and a pixel buried channel CCD array when bombarded with electrons were studied. The devices were mounted in a high vacuum system and irradiated with electrons generated by an electron gun. Basic measurements of EBS gain, dead voltage, transfer efficiency and dark current were performed to verify proper device operation. The surface channel devices were then irradiated with electrons of up to 8 keV energy for up to 98 hours while the buried channel device was irradiated with electrons.

Borsuk, G. M.↗

Role of belly board device in the age of intensity modulated radiotherapy for pelvic irradiation

Small bowel dose often represents a limiting factor for radiation treatment of pelvic malignancies. To reduce small bowel toxicity, a belly board device (BBD) with a prone position is often recommended. Intensity modulated radiotherapy (IMRT) could reduce dose to small bowel based on the desired dose-volume constraints. We investigated the efficacy of BBD in conjunction with IMRT. A total of 11 consecutive patients with the diagnosis of rectal cancer, who were candidates for definitive therapy, were selected. Patients were immobilized with BBD in prone position for simulation and treatment. Supine position computed tomography (CT) data were either acquired at the same time or during a diagnostic scan, and if existed was used. Target volumes (TV) as well as organs at risk (OAR) were delineated in both studies. Three-dimensional conformal treatment (3DCRT) and IMRT plans were made for both scans. Thus for each patient, 4 plans were generated. Statistical analysis was conducted for maximum, minimum, and mean dose to each structure. When comparing the normalized mean Gross TV dose for the different plans, there was no statistical difference found between the planning types. There was a significant difference in small bowel sparing when using prone position on BBD comparing 3DCRT and IMRT plans, favoring IMRT with a 29.6% reduction in dose (p = 0.007). There was also a statistically significant difference in small bowel sparing when comparing supine position IMRT to prone-BBD IMRT favoring prone-BBD IMRT with a reduction of 30.3% (p = 0.002). For rectal cancer when small bowel could be a limiting factor, prone position using BBD along with IMRT provides the best sparing. We conclude that whenever a dose escalation in rectal cancer is desired where small bowel could be limiting factor, IMRT in conjunction with BBD should be selected.

61 RADIATION PROTECTION AND DOSIMETRY↗

Development of New Type-B Containers and the 'Alternative Approach' Disposal of High-Activity Sealed Sources - 17385

The DOE/NNSA Office of Radiological Security (ORS) is undertaking two projects to enable the recovery and disposal of high-activity sealed sources. First, ORS has completed the development, certification, and fabrication of a new Type B package to support the recovery and transportation of high-activity sources commonly used in irradiators and cancer treatment devices. A second design is currently undergoing certification. The new containers will enable DOE/NNSA shipment of nearly 100 percent of all commercially used devices containing Cs-137 and Co-60, which are particularly significant from a National security, public health, and safety standpoint. Second, ORS and the Conference of Radiation Control Program Directors (CRCPD) Source Collection and Threat Reduction (SCATR) are piloting the commercial disposal of a high-activity device under the NRC's revised guidance on concentration averaging and encapsulation. The Cs-137 blood irradiator is being proposed for disposal at the U.S. Ecology facility in Richland, WA. The project is intended to serve as a model for commercial disposal of similar Class C sources that for decades have been without a commercial disposal pathway. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

SEM analysis of ionizing radiation effects in linear integrated circuits

A successful diagnostic technique was developed using a scanning electron microscope (SEM) as a precision tool to determine ionization effects in integrated circuits. Previous SEM methods radiated the entire semiconductor chip or major areas. The large area exposure methods do not reveal the exact components which are sensitive to radiation. To locate these sensitive components a new method was developed, which consisted in successively irradiating selected components on the device chip with equal doses of electrons /10 to the 6th rad (Si)/, while the whole device was subjected to representative bias conditions. A suitable device parameter was measured in situ after each successive irradiation with the beam off.

Stanley, A. G.↗

Electroforming-Free TaOx Memristors using Focused Ion Beam Irradiations

In this study, we demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Finally, ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a CMOS compatible approach to wafer level fabrication of fully formed and operational memristors.

36 MATERIALS SCIENCE↗

Operando Temperature Measurements of Photovoltaic Laser Power Converter Devices Under Continuous High-Intensity Illumination

Photovoltaic devices that operate under extremely high irradiances, such as laser power converters (LPCs), may also operate at elevated temperatures, even under active cooling, as the result of large temperature gradients. We demonstrate the operation of GaAs LPC devices under orders of magnitude of irradiances up to 150 W/cm 2 in a monochromatic laser simulator with an active cooling stage. The steady-state open-circuit voltage (V OC ) as a function of irradiance is known to droop at high irradiance as the result of junction heating, but the junction temperature can be difficult to measure by conventional methods. Fast, transient V OC measurements under these extreme operating conditions are used here to determine the junction temperature. Empirical V OC temperature coefficients of the devices at each irradiance of interest are determined and used as an integral part of this technique. We show that the thermal design of different LPC devices strongly affects the operating temperature of the junctions. Knowledge of the operating temperature can be a strong tool for understanding the nature of loss mechanisms and improving the design for the operation of photovoltaic LPCs at high irradiances. Furthermore, this technique can be used for laboratory devices during initial design as well as to characterize mass-produced and packaged devices for quality control.

14 SOLAR ENERGY↗

Low cost and facile fabrication of broadband laser power meter based on reduced graphene oxide film

Highlights: • The reduced graphene oxide film is used to fabricate the low cost laser powermeter. • The photoresponse of the device is explored in the visible to near-infrared range. • The photoresponse of the device is linearly related to the irradiated laser power. • The photoelectric current of the device does not depend on the laser spot size. - Abstract: Here, we have demonstrated a new type of broadband reduced graphene oxide-based laser power meter in simple and low cost method. The broadband photosensitivity of the device is confirmed by photocurrent measurements at different incident laser wavelengths of 405, 532, 635 and 808 nm. It is shown that its photocurrent increases linearly with increasing the power of the laser beam. Also, it is observed that the photocurrent behavior of the device does not depend upon the size of the laser spot. It should be noted that the reduced graphene oxide power meter is the thermal detection device. Therefore, the response of the sample in the vacuum is greatly enhanced in compared to the environmental air. Cooling system can also decrease the time required for the establishment of thermal equilibrium and thus reduce the response time of the power meter. These results open up exciting opportunities for developing broadband photodetectors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Summary of Proton Test on the Actel RH1020 at Indiana University

Proton tests were performed on the Actel RH1020 at the Indiana University Cyclotron Facility. The devices were active during the irradiation. Upsets and currents were monitored in real time with the devices being clocked at 1 MHz. The results of the tests are summarized.

Katz, Richard↗

Resilience of High-Efficiency CdSeTe:As and CdSeTe:Cu Solar Cells to Proton Irradiation

Power generation in space is currently dominated by expensive III-V multi-junction photovoltaic (PV) devices and cheap crystalline silicon (c-Si) PV devices. Both of these technologies degrade rapidly in proton-radiation-rich space environments, such as the Van Allen belt. The present study of cadmium selenide telluride- (CdSeTe-) based PV devices exposed to 150-to-1500 keV proton irradiation with fluences up to 9 x 1013 cm-2 reveal a more radiation-hard alternative to III-V and c-Si PV technologies. We report on measurement and analysis of current density vs voltage (JV), external quantum efficiency (EQE), external radiative efficiency, and capacitance vs voltage (CV) characteristics. JV characteristics of As-doped CdSeTe devices show 80% remaining power conversion efficiency (PCE) relative to unexposed controls when exposed to 650 keV protons at a fluence of 1012 cm-2. Under these same irradiation conditions, Cu-doped CdSeTe devices demonstrate an even better 95% PCE retention compared with unirradiated control devices. Evidence of radiation-induced absorber p-type doping compensation is observed in the glass-side EQE at 0 V and CV characteristics of most of the irradiated CdSeTe:As devices, but clear compensation is evident only for the most heavily irradiated CdSeTe:Cu devices. Elevated blue-green photocurrent in the film-side 0 V EQE suggests a buried junction in the most heavily irradiated CdSeTe:As devices. Although CdSeTe:Cu devices are the more resilient of the CdSeTe structures, both CdSeTe-based technologies are radiation-hard when compared to c-Si and III-V multi-junction PV.

14 SOLAR ENERGY↗

Direct comparison of gamma, electron beam and X-ray irradiation doses on characteristics of low-density polyethylene, polypropylene homopolymer, polyolefin elastomer and chlorobutyl rubber medical device polymers

There is a growing need for increased efficiency in the sterilization of single use medical devices and other products that contain polymer components. Gamma radiation is widely used for devices suited for radiation sterilization; however, safety, throughput and cobalt-60 source availability are challenging the prospect of relying on gamma radiation to meet the anticipated needs of the industry. Use of electron beam (e-beam) and X-rays as alternatives to gamma for radiation sterilization have been hampered in part by a concern that these modalities may adversely affect polymer integrity and performance relative to the gamma method, for which the industry has had much more experience. To address this concern, the effects of sterilization-relevant doses of ebeam, X-ray and gamma radiation were directly compared using common medical device polymers found in two prototypical commercial devices currently sterilized using cobalt-60 gamma irradiation. The Becton, Dickinson and Company (BD) Vacutainer™ Plus tube contains low-density polyethylene and chlorobutyl rubber components, while the BD Vacutainer™ Push Button Blood Collection Set contains polypropylene homopolymer and polyolefin elastomer components. Injection-molded samples prepared from the polymers used in these products were exposed to target doses of 15, 35, 50 and 80 kGy using gamma, e-beam and X-ray radiation. Changes in coloration, tensile properties and hardness were measured for each condition, and the effects of e-beam and X-ray irradiation compared with the effects of gamma irradiation on these properties. Both e-beam and X-ray appear as viable alternatives to gamma irradiation for sterilization of the polymers tested.

sterilization, gamma, X-ray, electron beam, radiat↗

Modeling and Design of Micro Flux Monitors for Neutron Fluence Measurements

Measuring neutron flux is critical to understanding the characteristics of nuclear reactors and can provide information on the energy spectrum, total neutron fluence, and operational history of a facility. Such measurements are typically performed by irradiating high-purity materials in an operating reactor for a known length of time. By measuring and identifying activation products in the irradiated materials and referencing the energy-dependent cross section of each isotope, the neutron energy spectrum and total fluence can be determined. Historical techniques use a variety of small, individually pressed foils or wires for dosimeter devices, which can result in excessively high levels of radioactivity and complications in handling after irradiation. The present work describes a new neutron dosimetry concept, named the micro flux monitor, that uses semiconductor device fabrication processes to deposit thin films of flux monitoring materials in precise geometries onto a SiC wafer. This approach allows multiple dosimetry materials to be located on a single device, simplifying irradiation and subsequent analysis. The geometry, and therefore mass, of each material can be custom-tailored for a specific application—considering the expected neutron flux, duration of irradiation, and device retrieval time of a facility. Additionally, hundreds of identical dosimetry monitors can be produced simultaneously, reducing fabrication costs. Finally, the extremely thin metal dimensions of these devices could improve the fidelity of neutron fluence measurements by reducing neutron self-shielding and gamma self-attenuation effects.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗

Gallium nitride (GaN) devices as a platform technology for radiation hard inertial confinement fusion diagnostics

Inertial Confinement Fusion (ICF) is undergoing more detailed research to increase neutron yield and will require high resolution imaging near the target. Neutron damage to diagnostics remains a serious issue in understanding and achieving ICF. We have demonstrated that Gallium Nitride (GaN) optoelectronic devices have exceptional neutron radiation hardness, by systematic testing of neutron radiation effects in GaN devices and materials with elevated neutron fluence levels and a broad neutron energy spectrum. During the 2013-2017 run cycles at Los Alamos Neutron Science Center (LANSCE), we irradiated various GaN materials and devices with fast and thermal plus resonance neutrons at several beamlines. This work presents a radiation hardness study for Aluminum Gallium Nitride and Gallium Nitride (AlGaN/GaN) deep UV LEDs irradiated at the LANSCE 4FP60R beamline. The fluence level was up to 2.4 × 10 13 neutrons/cm 2 for neutrons with energies greater than 0.1 MeV. The device performance was monitored in real time. After three years of irradiation studies, we found that the GaN devices maintained operation in the forward active region. The current and voltage relation (I-V curves) varied insignificantly in the linear region. Finally, our results demonstrate the radiation hardness needed for laser fusion diagnostics at least up to 10 17 neutron yield per shot, if the diagnostics is placed 1 m away from the target, where the neutron fluence per shot is approximately 8 × 10 11 n/cm 2 . The GaN devices can operate for multiple shots.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

SU-F-BRA-16: Development of a Radiation Monitoring Device Using a Low-Cost CCD Camera Following Radionuclide Therapy

Purpose: It is now commonplace to handle treatments of hyperthyroidism using iodine-131 as an outpatient procedure due to lower costs and less stringent federal regulations. The Nuclear Regulatory Commission has currently updated release guidelines for these procedures, but there is still a large uncertainty in the dose to the public. Current guidelines to minimize dose to the public require patients to remain isolated after treatment. The purpose of this study was to use a low-cost common device, such as a cell phone, to estimate exposure emitted from a patient to the general public. Methods: Measurements were performed using an Apple iPhone 3GS and a Cs-137 irradiator. The charge-coupled device (CCD) camera on the phone was irradiated to exposure rates ranging from 0.1 mR/hr to 100 mR/hr and 30-sec videos were taken during irradiation with the camera lens covered by electrical tape. Interactions were detected as white pixels on a black background in each video. Both single threshold (ST) and colony counting (CC) methods were performed using MATLAB®. Calibration curves were determined by comparing the total pixel intensity output from each method to the known exposure rate. Results: The calibration curve showed a linear relationship above 5 mR/hr for both analysis techniques. The number of events counted per unit exposure rate within the linear region was 19.5 ± 0.7 events/mR and 8.9 ± 0.4 events/mR for the ST and CC methods respectively. Conclusion: Two algorithms were developed and show a linear relationship between photons detected by a CCD camera and low exposure rates, in the range of 5 mR/hr to 100-mR/hr. Future work aims to refine this model by investigating the dose-rate and energy dependencies of the camera response. This algorithm allows for quantitative monitoring of exposure from patients treated with iodine-131 using a simple device outside of the hospital.

60 APPLIED LIFE SCIENCES↗