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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS2021

Microstructural Observations on Advanced Multilayer Protective Coatings for Nuclear Thermal Propulsion

The present research discusses the microstructures of a new multilayered coating concept proposed to solve the “midrange corrosion” problem observed in NbC and ZrC-coated graphite (Gr) nuclear fuels during the NERVA/Rover programs. The concept envisions designing a compliant multilayered coatings architecture to accommodate the thermal expansion mismatch strains between the ZrC outer coating and the Gr/(U,Zr)C fuel matrix along with using a diffusion barrier to minimize carbon and hydrogen diffusion, respectively. Multilayered coatings were deposited on Gr substrates by chemical vapor deposition (CVD). Graphite disks, as well as the inner channels of a 19-hole hexagonal rod 152.4 mm long, were coated by CVD in proof-of concept process demonstration studies. Coated disk specimens were thermally-cycled between ambient and 1900 K for as long as 20 cycles with a 1h hold time at the temperature using both stepped and non-interrupted thermal cycling methods. Detailed cross-sectional microstructural analyses were conducted on the thermally-cycled coated disks. These results showed that the coatings were intact after 20 thermal cycles at 1900 K although the bonding of the overlay Mo coating appeared to be influenced by the oxygen content in the layer. Seven transverse sections were cut along the length from the coated hexagonal rod for microstructural studies. All the nineteen channels were observed to have been coated in all the sections. This paper reports the results of detailed microstructural analyses, compositional line scans and x-ray dot maps conducted on three coated channels from a mid-section of the rod. The measured values of carbon (C) were observed to be exceptionally high in all the specimens, which were attributed to hydrocarbon contamination of the specimen surfaces. It was observed that the oxygen (O) levels were high in all the coating layers even after approximately correcting for the observed high values of C. The source of O contamination of the CVD reactor system was attributed to either the presence of oxychloride impurities in the precursor salts or a pin hole leak in the coating system. It is concluded that high values of O result in poor bonding of the Mo overlay to the ZrC layer. These trials have established that it is possible to deposit multilayered coatings by CVD in 19-hole hexagonal rods 152.4 mm long similar to the NERVA fuel rod design although the quality of the coatings and the uniformity of their thicknesses require further improvement.

Nuclear thermal propulsion, multilayer coatings, m↗
NASA NTRS1987

Analysis of flow decay potential on Galileo

The risks posed to the NASA's Galileo spacecraft by the oxidizer flow decay during its extended mission to Jupiter is discussed. The Galileo spacecraft will use nitrogen tetroxide (NTO)/monomethyl hydrazine bipropellant system with one large engine thrust-rated at a nominal 400 N, and 12 smaller engines each thrust-rated at a nominal 10 N. These smaller thrusters, because of their small valve inlet filters and small injector ports, are especially vulnerable to clogging by iron nitrate precipitates formed by NTO-wetted stainless steel components. To quantify the corrosion rates and solubility levels which will be seen during the Galileo mission, corrosion and solubility testing experiments were performed with simulated Galileo materials, propellants, and environments. The results show the potential benefits of propellant sieving in terms of iron and water impurity reduction.

Cole, T. W.↗
NASA NTRS1979

Rates of the reactions of 1, 1, 1-trichloroethane /methyl chloroform/ and 1, 1, 2-trichloroethane with OH

Highly purified samples of the two chlorocarbons, trichloroethane and methyl chloroform, were reacted with OH over the temperature range of 278 to 460 K in a discharge-flow system with resonance flourescence detection of OH. Attention is given to the data obtained at various temperature levels and to the graph of Arrhenius' diagram. It is determined that the methyl chloroform reaction was slower and its temperature dependence somewhat steeper than the earlier measurements had indicated, probably due to the presence of faster reacting olefinic impurities in prior studies. Implications for stratospheric ozone reductions by C10-sub-x catalysis and for tropospheric OH-budget are briefly discussed.

Jeong, K.-M.↗
NASA NTRS1988

Feasibility studies of the growth of 3-5 compounds of boron by MOCVD

Boron-arsenic and boron-phosphorus films have been grown on Si sapphire and silicon-on-sapphire (SOS) by pyrolyzing Group 3 alkyls of boron, i.e., trimethylborane (TMB) and triethylborane (TEB), in the presence of AsH3 and PH3, respectively, in an H2 atmosphere. No evidence for reaction between the alkyls and the hydrides on mixing at room temperature was found. However, the films were predominantly amorphous. The film growth rate was found to depend on the concentration of alkyl boron compound and was essentially constant when TEB and AsH3 were pyrolyzed over the temperature range 550 C to 900 C. The films were found to contain mainly carbon impurities (the amount varying with growth temperature), some oxygen, and were highly stressed and bowed on Si substrates, with some crazing evident in thin (2 micron) B-P and thick (5 micron) B-As films. The carbon level was generally higher in films grown using TEB as the boron source. Films grown from PH3 and TMB showed a higher carbon content than those grown from AsH3 and TMB. Based on their B/As and B/P ratios, films with nominal compositions B sub12-16 As2 and B sub1.1-1.3 P were grown using TMB as the boron source.

Manasevit, H. M.↗
NASA NTRS1985

The Effects of Mode Impurity of Ka-band System Performance

Problems associated with spurious mode generation in the proposed Ka-Band gyroklystron transmitter tube, overmoded transmission line, and feed are discussed. A brief description of the overall problem is presented. The theory used to evaluate feed and antenna performance when spurious modes are present is given. Results for feed patterns and overall antenna patterns for various levels and types of spurious modes are presented. Worst case antenna efficiency is calculated as a function of spurious mode level. Conclusions are drawn regarding the results of this study and their application to specifications on the transmitter tube and transmission line system.

Hoppe, D. J.↗
NASA NTRS2000

Life and Reliability Characteristics of TurboBrayton Coolers

Wear and internal contaminants are two of the primary factors that influence reliable, long-life operation of turbo-Brayton cryocoolers. This paper describes tests that have been conducted and methods that have been developed for turbo-Brayton components and systems to assure reliable operation. The turbomachines used in these coolers employ self-acting gas bearings to support the miniature high-speed shafts, thus providing vibration-free operation. Because the bearings are self-acting, rubbing contact occurs during initial start-up and shutdown of the machines. Bearings and shafts are designed to endure multiple stop/start cycles without producing particles or surface features that would impair the proper operation of the machines. Test results are presented for a variety of turbomachines used in these systems. The tests document extended operating life and start/stop cycling behavior for machines over a range of time and temperature scales. Contaminants such as moisture and other residual gas impurities can be a source of degraded operation if they freeze out in sufficient quantities to block flow passages or if they mechanically affect the operation of the machines. A post-fabrication bakeout procedure has been successfully used to reduce residual internal contamination to acceptable levels in a closed cycle system. The process was developed during space qualification tests on the NICMOS cryocooler. Moisture levels were sampled over a six-month time interval confirming the effectiveness of the technique. A description of the bakeout procedure is presented.

Breedlove, Jeff J.↗
NASA NTRS2000

Segregation Behavior of Sulfur and Other Impurities Onto the Free Surfaces of ED-Ni Deposits

Most researchers attribute grain boundary embrittlement in electro-deposited Nickel (ED-Ni) to the presence of small quantities of Sulfur as an impurity. It occurs in a highly mobile form that segregates to the grain boundaries. Evaluation of Sulfur segregation requires that a sample be fractured through the grain boundaries. However, this action may not always be possible. ED-Ni is inherently tough at ambient temperature, especially if a low level of Sulfur was intentionally maintained. A new method was developed to study Sulfur and other migrant species to the grain boundaries, which also migrate to free surfaces. A test specimen is heated by a quartz lamp within the sample preparation chamber, allowing the mobile species to migrate to polished free surfaces. There the mobile species are analyzed using X-ray photoelectron spectroscopy (XPS) also known as Electron Spectroscopy for Chemical Analysis (ESCA).

Panda, Binayak↗
NASA NTRS2001

Segregation Behavior of Sulfur and Other Impurities onto the Free Surfaces of ED-NI Deposits

Most researchers attribute grain boundary embrittlement in electro-deposited nickel (ED-Ni) to the presence of small quantities of sulfur as an impurity. It occurs in a highly mobile form that segregates to the grain boundaries. Evaluation of sulfur segregation requires that a sample be fractured through the grain boundaries. However, this action may not always be possible. ED-Ni is inherently tough at ambient temperature, especially if a low level of sulfur was intentionally maintained. A new method was developed to study sulfur and other migrant species to the grain boundaries, which also migrate to free surfaces. A test specimen is heated by a quartz lamp within the sample preparation chamber, allowing the mobile species to migrate to polished free surfaces. There the mobile species are analyzed using X-ray photoelectron spectroscopy (XPS) also known as Electron Spectroscopy for Chemical Analysis (ESCA).

Panda, B.↗
NASA NTRS1994

Electronic characterization of defects in narrow gap semiconductors

We use a Green's function technique to calculate the position of deep defects in narrow gap semiconductors. We consider substitutional (including antisite), vacancy, and interstitial (self and foreign) deep defects. We also use perturbation theory to look at the effect of nonparabolic bands on shallow defect energies and find nonparabolicity can increase the binding by 10 percent or so. We consider mercury cadmium telluride (MCT), mercury zinc telluride (MZT), and mercury zinc selenide (MZS). For substitutional and interstitial defects we look at the situation with and without relaxation. For substitutional impurities in MCT, MZT, and MZS, we consider x (the concentration of Cd or Zn) in the range 0.1 less than x less than 0.3 and also consider appropriate x so E(sub g) = 0.1 eV for each of the three compounds. We consider several cation site s-like deep levels and anion site p-like levels. For E(sub g) = 0.1 eV, we also consider the effects of relaxation. Similar comments apply to the interstitial deep levels whereas no relaxation is considered for the ideal vacancy model. Relaxation effects can be greater for the interstitial than the substitutional cases. Specific results are given in figures and tables and comparison to experiment is made in a limited number of cases. We find, for example, that I, Se, S, Rn, and N are possible cation site, s-like deep levels in MCT and Zn and Mg are for anion site, p-like levels (both levels for substitutional cases). The corresponding cation and anion site levels for interstitial deep defects are (Au, Ag, Hg, Cd, Cu, Zn) and (N, Ar, O, F). For the substitutional cases we have some examples of relaxation moving the levels into the band gap, whereas for the interstitial case we have examples where relaxation moves it out of the band gap. Future work involves calculating the effects of charge state interaction and seeing the effect of relaxation on vacancy levels.

Patterson, James D.↗
NASA NTRS2021

Effect of High-K Dielectric Layer on 1/f Noise Behavior in Graphene Field-Effect Transistors

We report the 1/f noise characteristics at low-frequency in graphene field-effect transistors that utilized a high- dielectric tantalum oxide encapsulated layer (a few nanometers thick) placed by atomic layer deposition on Si3N4. A low-noise level of ~ 2.2  10-10 Hz-1 has been obtained at f = 10 Hz. The origin and physical mechanism of the noise can be interpreted by the McWhorter context, where fluctuations in the carrier number contribute dominantly to the low-frequency noise. Optimizing fabrication processes reduced the number of charged impurities in the graphene field-effect transistors. The study has provided insights into the underlying physical mechanisms of the noise at low-frequency for reducing the noise in graphene-based devices.

Yifei Wang↗
NASA NTRS1982

High purity low dislocation GaAs single crystals

Recent advances in GaAs bulk crystal growth using the LEC (liquid encapsulated Czochralski) technique are described. The dependence of the background impurity concentration and the dislocation density distribution on the materials synthesis and growth conditions were investigated. Background impurity concentrations as low as 4 x 10 to the 15th power were observed in undoped LEC GaAs. The dislocation density in selected regions of individual ingots was very low, below the 3000 cm .3000/sq cm threshold. The average dislocation density over a large annular ring on the wafers fell below the 10000/sq cm level for 3 inch diameter ingots. The diameter control during the program advanced to a diameter variation along a 3 inch ingot less than 2 mm.

Chen, R. T.↗
NASA NTRS1989

Gettering of donor impurities by V in GaAs and the growth of semi-insulating crystals

Vanadium added to the GaAs melt getters shallow donor impurities (Si and S) and decreases their concentration in the grown crystals. This gettering is driven by chemical reactions in the melt rather than in the solid. Employing V gettering, reproducibly semi-insulating GaAs were grown by horizontal Bridgman and liquid-encapsulated Czochralski techniques, although V did not introduce any midgap energy levels. The compensation mechanism in these crystals was controlled by the balance between the native midgap donor EL2 and residual shallow acceptors. Vanadium gettering contributed to the reduction of the concentration of shallow donors below the concentration of acceptors. The present findings clarify the long-standing controversy on the role of V in achieving semi-insulating GaAs.

Ko, K. Y.↗
NASA NTRS1986

High-purity silicon crystal growth investigations

Information is given on evaporation and segregation contributions to impurity profiles of floating zone crystals (FZ); high-purity silicon float zoning (FZ); minority-carrier lifetime measurement of heavily doped silicon crystals; the effect of some crystal growth parameters on minority-carrier lifetime; and defect investigations by X-ray topography in graphical and tabular form. It was concluded that evaporation contributes substantially to impurity reduction when FZ or cold-crucible growth is conducted in a vacuum; boron and gallium may be more favorable dopants than indium or aluminum for obtaining high minority-carrier lifetimes; minority-carrier lifetimes greater than 100 microseconds are feasible at a 2 times 10 to the 17th power cm-3 doping level; minority-carrier lifetime decreases with increasing crystal cooling rate and also with the presence of dislocations; the method used to clean silicon feed rods affects lifetime; and microdefect densities in dislocation-free FZ crystals appear to be lower with Ga doping than with B doping.

Ciszek, T. F.↗
NASA NTRS1982

Thickness dependences of solar cell performance

The significance of including factors such as the base resistivity loss for solar cells thicker than 100 microns and emitter and BSF layer recombination for thin cells in predicting the fill factor and efficiency of solar cells is demonstrated analytically. A model for a solar cell is devised with the inclusion of the dopant impurity concentration profile, variation of the electron and hole mobility with dopant concentration, the concentration and thermal capture and emission rates of the recombination center, device temperature, the AM1 spectra and the Si absorption coefficient. Device equations were solved by means of the transmission line technique. The analytical results were compared with those of low-level theory for cell performance. Significant differences in predictions of the fill factor resulted, and inaccuracies in the low-level approximations are discussed.

Sah, C. T.↗
NASA NTRS1977

EPR and transient capacitance studies on electron-irradiated silicon solar cells

One and two ohm-cm solar cells irradiated with 1 MeV electrons at 30 C were studied using both EPR and transient capacitance techniques. In 2 ohm-cm cells, Si-G6 and Si-G15 EPR spectra and majority carrier trapping levels at (E sub V + 0.23) eV and (E sub V + 0.38) eV were observed, each of which corresponded to the divacancy and the carbon-oxygen-vacancy complex, respectively. In addition, a boron-associated defect with a minority carrier trapping level at (E sub C -0.27) eV was observed. In 1 ohm-cm cells, the G15 spectrum and majority carrier trap at (E sub V + 0.38) eV were absent and an isotropic EPR line appeared at g = 1.9988 (+ or - 0.0003); additionally, a majority carrier trapping center at (E sub V + 0.32) eV, was found which could be associated with impurity lithium. The formation mechanisms of these defects are discussed according to isochronal annealing data in electron-irradiated p-type silicon.

Lee, Y. H.↗
NASA NTRS2002

Scale Adhesion, Sulfur Content, and TBC Failure on Single Crystal Superalloys

This paper summarizes the main effects of sulfur impurity content on the cyclic oxidation resistance of single crystal superalloys, with emphasis on scale and TBC adhesion. Eleven hundred degrees C cyclic oxidation of PWA 1480 produces scale spallation leading to a weight loss of more than 30 Mg/sq cm after 500 one-hr cycles for a sulfur content of 6 ppmw. The sulfur content was reduced to levels below 0.1 ppmw by hydrogen annealing, resulting in weight gains of only 0.5 to 1.0 Mg/sq cm after 1000 one-hr cycles. Samples were produced with various sulfur contents by adjusting the annealing temperature, time, and sample thickness (i.e., diffusion product Dt/L(exp 2)). The subsequent cyclic oxidation behavior, mapped over a sulfur content/thickness diagram, shows a transition to adherent behavior at sulfur levels equivalent to 1 monolayer of total segregation. Additional information is contained in the original extended abstract.

Smialek, James L.↗
NASA NTRS1991

Oxygen tracer diffusion in single-crystal alumina

Oxygen tracer diffusion coefficients are determined in single-crystal alumina samples with differing dopant levels using the gas-exchange technique. The diffusion direction is parallel to the c-axis and the ambient PO2 is 1 atm (100,000 Pa) for all experiments except a single run with a low PO2, approximately 10 to the -15th atm (10 to the -10th Pa) produced by a CO/CO2 mixture. The diffusion is insensitive to both impurities and ambient PO2. The insensitivities are discussed in terms of point-defect clustering. Prior tracer studies are compared and discussed.

Cawley, James D.↗
NASA NTRS1995

Sub-ppb Oxygen Contaminant Detection in Semi-Conductor Processing

Gaseous contaminants such as oxygen, water vapor, nitrogen and hydrocarbons are often present in the processing environment in semiconductor device fabrication and in containerless materials processing. The contaminants arise as a result of outgassing from hot surfaces or they may be part of the impurities in commercial ultra-high purity gases. Among these gaseous contaminants, oxygen is the most reactive and, therefore, has the most adverse effects on the end product. There has been an intense effort at the Jet Propulsion Laboratory to develop different types of oxygen sorbents to reduce oxygen concentration in a microgravity processing environment to sub-ppb (parts-per-billion) levels. Higher concentrations can lead to rapid surface oxide formation, hence reducing the quality of semiconductor devices. If the concentration of oxygen in a processing chamber at 1000oC is in the ppb level, it will only take approximately 10 seconds for an oxide layer to form on the surface of a sample. The interaction of oxygen with the water surface can lead to the formation of localized defects in semi-conductor devices, hence decreasing the manufacturing yield. For example, efficient production of 64 Mb RAM chips requires contaminations below ppb levels. This paper describes a technique for measuring trace quantities of oxygen contaminants by recording the monoatomic negative ions, O-, using mass spectrometry. The O- formation from the e--O2 interaction utilizes the electron dissociative attachment method that is greatly enhanced at the resonant energy (6.8 eV). The device combines a small gridded electron ionizer with a compact mass spectrometer. The concentrations of oxygen have been measured using the method of standard additions by diluting O2 in N2. The lowest detection limit obtained was 1.2 kHz (O- count rate) at a concentration of 10-10, corresponding to 0.1 ppb.

Sub-ppb Contaminant↗