Search NASA⌕ Search

SEARCH · Search NASA

Results for “InGaAs”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Characteristics of III-V Semiconductor Devices at High Temperature

This paper presents the development of III-V based pseudomorphic high electron mobility transistors (PHEMT's) designed to operate over the temperature range 77 to 473 K (-196 to 200 C). These devices have a pseudomorphic undoped InGaAs channel that is sandwiched between an AlGaAs spacer and a buffer layer; gate widths of 200, 400, 1600, and 3200 micrometers; and a gate length of 2 micrometers. Measurements were performed at both room temperature and 473 K (200 C) and show that the drain current decreases by 30 percent and the gate current increases to about 9 microns A (at a reverse bias of -1.5 V) at the higher temperature. These devices have a maximum DC power dissipation of about 4.5 W and a breakdown voltage of about 16 V.

Simons, Rainee N.↗
NASA NTRS1993

Quantum-well lasers for direct solar photopumping

Semiconductor lasers directly photopumped by focused sunlight may be viable sources of coherent light for intersatellite communications and other low-power spaceborne applications. In this work, we theoretically explore the possibility of realizing such devices. We specifically assess solar pumped operation of separate-confinement-quantum-well heterostructure (SCQWH) lasers based on InGaAs, GaAs, and AlGaA, as fabrication technology for these lasers is mature and they can operate at very low thresholds. We develop a model for step-index single-well SCQWH lasers photopumped by sunlight, examine how threshold solar photoexcitation intensities depend upon material and structure parameters, design optimum structures for solar-pumped operation, and identify design tradeoffs. Our results suggest that laser action should be possible in properly designed structures at readily achievable solar concentrations and that optimum designs for solar-pumped SCQWH lasers differ significantly from those for analogous current injection devices.

Unnikrishnan, Sreenath↗
NASA NTRS1993

High speed QPPM direct detection optical communication receivers for FSDD intersatellite links

This final report consists of four separate reports, one for each project involved in this contract. The first report is entitled '325 Mbps QPPM (quaternary pulse position modulation) Direct Detection Free Space Optical Communication Encoder and Receiver,' which was our primary work. The second report is entitled 'Test Results of the 325 Mbps QPPM High Speed Data Transmission GaAs ASICs,' which describes our work in connection with Galaxy Microsystems, Inc. who produced these ASICs for NASA. The third report, 'Receiver Performance Analysis of BPPM Optical Communication Systems Using 1.3 micron Wavelength Transmitter and InGaAs PIN Photodiodes,' was prepared at the request of the NASA/Photonics Branch for their efforts in upgrading the 1773 optical fiber data bus. The fourth report, 'Photomultiplier Tubes for Use at 1.064 micron Wavelength,' was also prepared at the request of the NASA/Photonics Branch as a research project.

Davidson, Frederic M.↗
NASA NTRS1994

Chemical beam epitaxy for high efficiency photovoltaic devices

InP-based multijunction tandem solar cells show great promise for the conversion efficiency (eta) and high radiation resistance. InP and its related ternary and quanternary compound semiconductors such as InGaAs and InGaAsP offer desirable combinations for energy bandgap values which are very suitable for multijunction tandem solar cell applications. The monolithically integrated InP/In(0.53)Ga(0.47)As tandem solar cells are expected to reach efficiencies above 30 percent. Wanlass, et.al., have reported AMO efficiencies as high as 20.1% for two terminal cells fabricated using atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). The main limitations in their technique are first related to the degradation of the intercell ohmic contact (IOC), in this case the In(0.53)Ga(0.47)As tunnel junction during the growth of the top InP subcell structure, and second to the current matching, often limited by the In(0.53)Ga(0.47)As bottom subcell. Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450 C - 530 C). In a recent report it was shown that cost-wise CBE is a breakthrough technology for photovoltaic (PV) solar energy progress in the energy conversion efficiency of InP-based solar cells fabricated using chemical beam epitaxy. This communication summarizes our recent results on PV devices and demonstrates the strength of this new technology.

Bensaoula, A.↗
NASA NTRS1994

Review of solar cell temperature coefficients for space

Energy conversion efficiency is an important parameter for solar cells, and well reported in the literature. However, solar cells heat up in sunlight, and the efficiency decreases. The temperature coefficient of the conversion efficiency is thus also extremely important, especially in mission modeling, but is much less well reported. It is of value to have a table which compiles into a single document values of temperature coefficients reported in the literature. In addition to modeling performance of solar cells in Earth orbit, where operating temperatures may range from about 20 C to as high as 85 C, it is of interest to model solar cells for several other recently proposed missions. These include use for the surface of Mars, for solar electric propulsion missions that may range from Venus to the Asteroid belt, and for laser-photovoltaic power that may involve laser intensities equivalent several suns. For all of these applications, variations in operating temperature away from the nominal test conditions result in significant changes in operating performance. In general the efficiency change with temperature is non-linear, however, in the range from negative 100 C through room temperature to a few hundred degrees C, efficiency is usually quite well modeled as a linear function of temperature (except for a few unusual cell types, such as amorphous silicon, and for extremely low bandgap cells, such as InGaAs).

Landis, Geoffrey A.↗
NASA NTRS1992

Materials, structures, and devices for high-speed electronics

Advances in materials, devices, and instrumentation made under this grant began with ex-situ null ellipsometric measurements of simple dielectric films on bulk substrates. Today highly automated and rapid spectroscopic ellipsometers are used for ex-situ characterization of very complex multilayer epitaxial structures. Even more impressive is the in-situ capability, not only for characterization but also for the actual control of the growth and etching of epitaxial layers. Spectroscopic ellipsometry has expanded from the research lab to become an integral part of the production of materials and structures for state of the art high speed devices. Along the way, it has contributed much to our understanding of the growth characteristics and material properties. The following areas of research are summarized: Si3N4 on GaAs, null ellipsometry; diamondlike carbon films; variable angle spectroscopic ellipsometry (VASE) development; GaAs-AlGaAs heterostructures; Ta-Cu diffusion barrier films on GaAs; GaAs-AlGaAs superlattices and multiple quantum wells; superconductivity; in situ elevated temperature measurements of III-V's; optical constants of thermodynamically stable InGaAs; doping dependence of optical constants of GaAs; in situ ellipsometric studies of III-V epitaxial growth; photothermal spectroscopy; microellipsometry; and Si passivation and Si/SiGe strained-layer superlattices.

Woollam, John A.↗
NASA NTRS1994

Midfit dislocation generation mechanisms in InGaAs/GaAs heterostructures

An experimental investigation of misfit dislocation generation mechanisms at an InGaAs/GaAs heterointerface is reported. InGaAs epitaxial layers were grown by low-pressure oragnometallic vapor-phase epitaxy on patterned and unpatterned GaAs substrate having etch-pit densities (EPD) of 200, 1400, and 10,000 cm(exp -2). After epitaxial growth, the samples were annealed at temperatures between 650 and 750 C, and analyzed by optical and transmission electron microscopy. For the range of substrate EPD studied, it was found that the substrate EPD controls the onset of misfit dislocation generation for low-temperature epitaxy (less than 600 C) on unpatterned substrates. When epilayers were annealed at 750 C, the density of misfit dislocations was independent of the substrate EPD. These studies also show that the dominant misfit dislocation generation mechanism for films grown on patterned substrates is nucleation at the growth-mesa edge. The density of preexisting threading dislocations has little influence on misfit dislocation generation for films selectively deposited within 100 x 100 sq micrometer growth windows. For selective heteroepitaxy, misfit dislocation generation strongly depends on the crystallographic orientation of the growth-mesa edge.

Kui, J.↗
NASA NTRS1995

Monolithic Active-Pixel Infrared Sensors

Monolithic arrays of active-pixel junction field-effect (JFET) devices made from InGaAs proposed for use as imaging sensors sensitive to light in visible and short-wavelength infrared parts of electromagnetic spectrum. Each pixel of such array comprises photodetector monolithically integrated with JFET output-amplifier circuit of source-follower type - structure similar to charge-coupled device (CCD). Sizes of instruments reduced because large cooling systems not needed.

Fossum, Eric R.↗
NASA NTRS1995

Metal colloids and semiconductor quantum dots: Linear and nonlinear optical properties

One aspect of this project involves a collaborative effort with the Solid State Division of ORNL. The thrust behind this research is to develop ion implantion for synthesizing novel materials (quantum dots wires and wells, and metal colloids) for applications in all optical switching devices, up conversion, and the synthesis of novel refractory materials. In general the host material is typically a glass such as optical grade silica. The ions of interest are Au, Ag, Cd, Se, In, P, Sb, Ga and As. An emphasis is placed on host guest interactions between the matrix and the implanted ion and how the matrix effects and implantation parameters can be used to obtain designer level optical devices tailored for specific applications. The specific materials of interest are: CdSe, CdTe, InAs, GaAs, InP, GaP, InSb, GaSb and InGaAs. A second aspect of this research program involves using porous glass (25-200 A) for fabricating materials of finite size. In this part of the program, we are particularly interested in characterizing the thermodynamic and optical properties of these non-composite materials. We also address how phase diagram of the confined material is altered by the interfacial properties between the confined material and the pore wall.

Henderson, D. O.↗
NASA NTRS1995

InP tunnel junction for InGaAs/InP tandem solar cells

Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting minimal doping cross diffusion in the narrow space-charge region (approximately 1-5 nm) of the device. The fabrication of tandem devices using InP tunnel diodes as interconnect is in progress and will be reported at the conference.

Vilela, M. F.↗
NASA NTRS1995

Low temperature Zn diffusion for GaSb solar cell structures fabrication

Low temperature Zn diffusion in GaSb, where the minimum temperature was 450 C, was studied. The pseudo-closed box (PCB) method was used for Zn diffusion into GaAs, AlGaAs, InP, InGaAs and InGaAsP. The PCB method avoids the inconvenience of sealed ampoules and proved to be simple and reproducible. The special design of the boat for Zn diffusion ensured the uniformality of Zn vapor pressure across the wafer surface, and thus the uniformity of the p-GaSb layer depth. The p-GaSb layers were studied using Raman scattering spectroscopy and the x-ray rocking curve method. As for the postdiffusion processing, an anodic oxidation was used for a precise thinning of the diffused GaSb layers. The results show the applicability of the PCB method for the large-scale production of the GaSb structures for solar cells.

Sulima, Oleg V.↗
NASA NTRS1996

Momentum Transfer Studies and Studies of Linear and Nonlinear Optical Properties of Metal Colloids and Semiconductor Quantum Dots

Phase 1 of this work involved design work on a momentum transfer device. The progress on design and testing will be presented. Phase 2 involved the systematic study of the MPD thruster for dual uses. Though it was designed as a thruster for space vehicles, the characteristics of the plasma make it an excellent candidate for industrial applications. This project sought to characterize the system for use in materials processing and characterization. The surface modification on ZnCdTe, CdTe, and ZnTe will be presented. Phase 3 involved metal colloids and semiconductor quantum dots. One aspect of this project involves a collaborative effort with the Solid State Division of ORNL. The thrust behind this research is to develop ion implantation for synthesizing novel materials (quantum dots wires and wells, and metal colloids) for applications in all optical switching devices, up conversion, and the synthesis of novel refractory materials. The ions of interest are Au, Ag, Cd, Se, In, P, Sb, Ga, and As. The specific materials of interest are: CdSe, CdTe, InAs, GaAs, InP, GaP, InSb, GaSb, and InGaAs. A second aspect of this research program involves using porous glass (25-200 A) for fabricating materials of finite size. The results of some of this work will also be reported.

Collins, W. E.↗
NASA NTRS1995

Resonant Tunneling Analog-To-Digital Converter

As sampling rates continue to increase, current analog-to-digital converter (ADC) device technologies will soon reach a practical resolution limit. This limit will most profoundly effect satellite and military systems used, for example, for electronic countermeasures, electronic and signal intelligence, and phased array radar. New device and circuit concepts will be essential for continued progress. We describe a novel, folded architecture ADC which could enable a technological discontinuity in ADC performance. The converter technology is based on the integration of multiple resonant tunneling diodes (RTD) and hetero-junction transistors on an indium phosphide substrate. The RTD consists of a layered semiconductor hetero-structure AlAs/InGaAs/AlAs(2/4/2 nm) clad on either side by heavily doped InGaAs contact layers. Compact quantizers based around the RTD offer a reduction in the number of components and a reduction in the input capacitance Because the component count and capacitance scale with the number of bits N, rather than by 2 (exp n) as in the flash ADC, speed can be significantly increased, A 4-bit 2-GSps quantizer circuit is under development to evaluate the performance potential. Circuit designs for ADC conversion with a resolution of 6-bits at 25GSps may be enabled by the resonant tunneling approach.

Broekaert, T. P. E.↗
NASA NTRS1995

Optically-Switched Resonant Tunneling Diodes for Space-Based Optical Communication Applications

We are developing a new type of digital photo-receiver that has the potential to perform high speed optical-to-electronic conversion with a factor of 10 reduction in component count and power dissipation. In this paper, we describe the room-temperature photo-induced switching of this InP-based device which consists of an InGaAs/AlAs resonant tunneling diode integrated with an InGaAs absorber layer. When illuminated at an irradiance of greater than 5 Wcm(exp -2) using 1.3 micromillimeter radiation, the resonant tunneling diode switches from a high-conductance to a low-conductance electrical state and exhibits a voltage swing of up to 800 mV.

Moise, T. S.↗
NASA NTRS1997

Analyses of Technology for Solid State Coherent Lidar

Over past few years, considerable advances have been made in the areas of the diode-pumped, eye-safe, solid state lasers and room temperature, wide bandwidth, semiconductor detectors operating in the near-infrared region. These advances have created new possibilities for the development of reliable and compact coherent lidar systems for a wide range of applications. This research effort is aimed at further developing solid state coherent lidar technology for remote sensing of atmospheric processes such as wind, turbulence and aerosol concentration. The work performed by the UAH personnel under this Delivery Order concentrated on design and analyses of laboratory experiments and measurements, and development of advanced lidar optical subsystems in support of solid state laser radar remote sensing systems which are to be designed, deployed, and used to measure atmospheric processes and constituents. Under this delivery order, a lidar breadboard system was designed and analyzed by considering the major aircraft and space operational requirements. The lidar optical system was analyzed in detail using SYNOPSIS and Code V optical design packages. The lidar optical system include a wedge scanner and the compact telescope designed by the UAH personnel. The other major optical components included in the design and analyses were: polarizing beam splitter, routing mirrors, wave plates, signal beam derotator, and lag angle compensator. This lidar system is to be used for demonstrating all the critical technologies for the development of a reliable and low-cost space-based instrument capable of measuring global wind fields. A number of laboratory experiments and measurements were performed at the NASA/MSFC Detector Characterization Facility, previously developed by the UAH personnel. These laboratory measurements include the characterization of a 2-micron InGaAs detectors suitable for use in coherent lidars and characterization of Holographic Optical Element Scanners. UAH personnel actively participated in the development of performance and operational requirements for the development of the high pulse energy transmitter laser and frequency-agile local oscillator laser, that are in-progress at NASA Langley Research Center and Jet Propulsion Laboratory.

Amzajerdian, Farzin↗
NASA NTRS1997

Ka-Band GaAs FET Monolithic Power Amplifier Development

Over the course of this program, very extensive progress was made in Ka-band GaAs technology. At the beginning of the program, odd-shaped VPE MESFET wafers were used. A breakthrough in power and efficiency was achieved with highly doped (8 x 10(exp 17) cm(exp -3) MBE grown MESFET material. We obtained power of 112 mW with 16 dB gain and 21.6% efficiency at 34 GHz with a monolithic 50-100-250 micron amplifier. The next breakthrough came with the use of heterostructures grown by MBE (AlGaAs/InGaAs where the InGaAs is highly doped). This allowed us to achieve high power density with high efficiency. A benchmark 40% efficiency was achieved with a single-stage 100 micron MMIC at 32.5 GHz. The corresponding three-stage 50-100-250 micron amplifier achieved 180 mW with 23 dB gain and 30.3% efficiency. The next breakthrough came with 3-inch MBE grown PHEMT wafers incorporating an etch-stop layer for the gate recess (using RIE). Again, state-of-the-art performances were achieved: 40% efficiency with 235 mW output power and 20.7 dB gain. The single-stage 2 x 600 micron chip demonstrated 794 mW output power with 5 dB gain and 38.2% power-added efficiency (PAE). The Ka-band technology developed under this program has promise for extensive use: JPL demonstrated 32 GHz phased arrays with a three-stage amplifier developed under this contract. A variation of the three-stage amplifier was used successfully in a 4 x 4 phased array transmitter developed under another NASA contract.

Saunier, Paul↗
NASA NTRS1998

Development of Advanced Laser Diode Sources

The design and operation of InGaAs-GaAs-AlGaAs asymmetric cladding ridge waveguide distributed Bragg reflector lasers is presented. Targeted for the remote sensing of water vapor with absorption lines in the lambda approximately 930 nm region, these devices operate CW with threshold currents as low as 11 MA and slope efficiencies as high as 0.37 W/A. Tbey also operate with over 30-dB side-mode suppression, and the typical CW characteristic temperature, T(sub o), is 95 K.

Coleman, J. J.↗
NASA NTRS1998

Flame Imaging System

A system for imaging a flame and the background scene is discussed. The flame imaging system consists of two charge-coupled-device (CCD) cameras. One camera uses a 800 nm long pass filter which during overcast conditions blocks sufficient background light so the hydrogen flame is brighter than the background light, and the second CCD camera uses a 1100 nm long pass filter, which blocks the solar background in full sunshine conditions such that the hydrogen flame is brighter than the solar background. Two electronic viewfinders convert the signal from the cameras into a visible image. The operator can select the appropriate filtered camera to use depending on the current light conditions. In addition, a narrow band pass filtered InGaAs sensor at 1360 nm triggers an audible alarm and a flashing LED if the sensor detects a flame, providing additional flame detection so the operator does not overlook a small flame.

Barnes, Heidi L.↗