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DOE OSTI2020

Epitaxial growth of rock salt MgZrN 2 semiconductors on MgO and GaN

Ternary nitride compound semiconductors have attracted recent attention as electronic materials since their properties can be tuned by cation stoichiometry and ordering. A recently discovered example is MgZrN 2 , a ternary analog to the rock salt semiconductor ScN. MgZrN 2 has a larger bandgap and stronger dielectric response than the binary compound. Polycrystalline thin films of MgZrN 2 have been studied, but demonstration of high-quality growth is still required to establish its suitability for technological applications. Here, we report on epitaxial growth of MgZrN 2 thin films on (100) and (111) MgO substrates and (001) GaN templates. The MgZrN 2 composition is confirmed by Rutherford backscattering spectrometry, showing no oxygen in the film except for a thin surface oxide layer. Epitaxial growth results in MgZrN 2 with x-ray diffraction rocking curves with a full-width at half-maximum in the range of 0.3–3.0°, depending on the substrate. Transmission electron microscopy analysis of the MgZrN 2 film grown on a (111) MgO substrate confirms epitaxial growth and shows a sharp film/substrate interface. In-plane temperature-dependent Hall effect measurements show that the material is an n-type semiconductor with a relatively high concentration ( n 300K ≈ 10 19 –10 20 cm -3 ) of thermally activated electrons. Room-temperature transport measurements show a conductivity of 25 S cm -1 and a Seebeck coefficient of -80 μ V K -1 . Overall, these results provide an important step toward integration of rock salt MgZrN 2 with other technological nitrides for device applications.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Tuning the Chern number in quantum anomalous Hall insulators

A quantum anomalous Hall (QAH) state is a two-dimensional topological insulating state that has a quantized Hall resistance of h/(Ce 2 ) and vanishing longitudinal resistance under zero magnetic field (where h is the Planck constant, e is the elementary charge, and the Chern number C is an integer). The QAH effect has been realized in magnetic topological insulators and magic-angle twisted bilayer graphene. However, the QAH effect at zero magnetic field has so far been realized only for C = 1. Here we realize a well quantized QAH effect with tunable Chern number (up to C = 5) in multilayer structures consisting of alternating magnetic and undoped topological insulator layers, fabricated using molecular beam epitaxy. The Chern number of these QAH insulators is determined by the number of undoped topological insulator layers in the multilayer structure. Moreover, we demonstrate that the Chern number of a given multilayer structure can be tuned by varying either the magnetic doping concentration in the magnetic topological insulator layers or the thickness of the interior magnetic topological insulator layer. We develop a theoretical model to explain our experimental observations and establish phase diagrams for QAH insulators with high, tunable Chern number. Furthermore, the realization of such insulators facilitates the application of dissipationless chiral edge currents in energy-efficient electronic devices, and opens up opportunities for developing multi-channel quantum computing and higher-capacity chiral circuit interconnects.

36 MATERIALS SCIENCE↗

NASA NTRS1986

On the secondary instability of Taylor-Goertler vortices to Tollmien-Schlichting waves in fully-developed flows

There are many flows of practical importance where both Tollmien-Schlichting waves and Taylor-Goertler vortices are possible causes of transition to turbulence. The effect of fully nonlinear Taylor-Goertler vortices on the growth of small amplitude Tollmien-Schlichting waves is investigated. The basic state considered is the fully developed flow between concentric cylinders driven by an azimuthal pressure gradient. It is hoped that an investigation of this problem will shed light on the more complicated external boundary layer problem where again both modes of instability exist in the presence of concave curvature. The type of Tollmein-Schlichting waves considered have the asymptotic structure of lower branch modes of plane Poisseulle flow. Whilst instabilities at lower Reynolds number are possible, the latter modes are simpler to analyze and more relevant to the boundary layer problem. The effect of fully nonlinear Taylor-Goertler vortices on both two-dimensional and three-dimensional waves is determined. It is shown that, whilst the maximum growth as a function of frequency is not greatly affected, there is a large destabilizing effect over a large range of frequencies.

Bennett, James↗

NASA NTRS1988

On the secondary instability of Taylor-Goertler vortices to Tollmien-Schlichting waves in fully developed flows

There are many flows of practical importance where both Tollmien-Schlichting waves and Taylor-Goertler vortices are possible causes of transition to turbulence. The effect of fully nonlinear Taylor-Goertler vortices on the growth of small amplitude Tollmien-Schlichting waves is investigated. The basic state considered is the fully developed flow between concentric cylinders driven by an azimuthal pressure gradient. It is hoped that an investigation of this problem will shed light on the more complicated external boundary layer problem where again both modes of instability exist in the presence of concave curvature. The type of Tollmien-Schlichting waves considered have the asymptotic structure of lower branch modes of plane Poiseuille flow. Whilst instabilities at lower Reynolds number are possible, the latter modes are simpler to analyze and more relevant to the boundary layer problem. The effect of fully nonlinear Taylor-Goertler vortices on both two-dimensional and three-dimensional waves is determined. It is shown that, whilst the maximum growth as a function of frequency is not greatly affected, there is a large destabilizing effect over a large range of frequencies.

Bennett, James↗

DOE OSTI2022

Interaction-induced velocity renormalization in magic-angle twisted multilayer graphene

Abstract Twistronics heterostructures provide a novel route to control the electronic single particle velocity and thereby to engineer strong effective interactions. Here we show that the reverse may also hold, i.e. that these interactions strongly renormalize the band structure. We demonstrate this mechanism for alternating-twist magic-angle three- and four-layer graphene at charge neutrality and in the vicinity of a phase transition which can be described by an Ising Gross-Neveu critical point corresponding, e.g. to the onset of valley Hall or Hall order. While the non-interacting model displays massless Dirac excitations with strongly different velocities, we show that interaction corrections make them equal in the infrared. However, the renormalization group flow of the velocities and of the coupling to the critical bosonic mode is strongly non-monotonic and dominated by the vicinity of a repulsive fixed point. We predict experimental consequences of this theory for tunneling and transport experiments and discuss the expected behavior at other quantum critical points, including those corresponding to intervalley coherent ordering.

Classen, Laura↗

NASA NTRS1977

Impurity concentrations and surface charge densities on the heavily doped face of a silicon solar cell

Increased solar cell efficiencies are attained by reduction of surface recombination and variation of impurity concentration profiles at the n(+) surface of silicon solar cells. Diagnostic techniques are employed to evaluate the effects of specific materials preparation methodologies on surface and near surface concentrations. It is demonstrated that the MOS C-V method, when combined with a bulk measurement technique, yields more complete concentration data than are obtainable by either method alone. Specifically, new solar cell MOS C-V measurements are combined with bulk concentrations obtained by a successive layer removal technique utilizing measurements of sheet resistivity and Hall coefficient.

Weinberg, I.↗

NASA NTRS1988

A comparative study of theoretical methods on Goertler instability

Goertler vortices arise in boundary layers along concave surfaces due to centrifugal effects and these vortices in combination with Tollmien-Schlichting (TS) waves and crossflow vortices may play an important role in triggering early transition. There have been two distinct theoretical approaches to solve the problem. In the classical, normal-mode approach (NMA) the linear development of Goertler vortices is reduced to an eigenvalue problem. In the other method, initiated by Hall, the governing partial differential equations for the perturbations which are parabolic in the streamwise direction, are solved as an initial value problem. This method predicts multiple neutral curves depending on how and where the mean flow is perturbed, unlike the NMA where a unique but different neutral curve is predicted by each investigator. The present paper attempts to compare the two techniques and shows that mutually compatible results can be obtained when physically consistent assumptions are made.

Kalburgi, Vijay↗

DOE OSTI2025

Fractional quantization in insulators from Hall to Chern

The discovery of the integer and fractional quantum Hall effects naturally prompted the question of whether these effects can be realized without a magnetic field. Answering this is fundamentally important and requires a synthesis of the concepts of band topology, quantum geometry and electronic correlations. Here we summarize the basic concepts of both fractional Chern and fractional topological insulators and illustrate them with the theoretical lattice models that support the flat Chern bands in which the states were first predicted. We then examine their experimental realizations in twisted bilayer transition metal dichalcogenides and moiré rhombohedral few-layer graphene. Here, we also discuss the future challenges and opportunities in this research field.

Quantum Hall↗

DOE OSTI2021

From weak antilocalization to Kondo scattering in a magnetic complex oxide interface

Quantum corrections to electrical resistance can serve as sensitive probes of the magnetic landscape of a material. For example, interference between time-reversed electron paths gives rise to weak localization effects, which can provide information about the coupling between spins and orbital motion, while the Kondo effect is sensitive to the presence of spin impurities. In this work, we use low-temperature magnetotransport measurements to reveal a gradual transition from weak antilocalization (WAL) to Kondo scattering in the quasi-two-dimensional electron gas formed at the interface between SrTiO 3 and the Mott insulator NdTiO 3 . This transition occurs as the thickness of the NdTiO 3 layer is increased. Analysis of the Kondo scattering and WAL points to the presence of atomic-scale magnetic impurities coexisting with nanoscale magnetic regions that affect transport via a strong magnetic exchange interaction. This leads to distinct magnetoresistance behaviors that can serve as a sensitive probe of magnetic properties in two dimensions.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Three-dimensional plasmoid-mediated reconnection and turbulence in Hall magnetohydrodynamics

Plasmoid instability accelerates reconnection in collisional plasmas by transforming a laminar reconnection layer into numerous plasmoids connected by secondary current sheets in two dimensions (2D) and by fostering self-generated turbulent reconnection in three dimensions (3D). In large-scale astrophysical and space systems, plasmoid instability likely initiates in the collisional regime but may transition into the collisionless regime as the fragmentation of the current sheet progresses toward kinetic scales. Hall magnetohydrodynamics (MHD) models are widely regarded as a simplified yet effective representation of the transition from collisional to collisionless reconnection. However, plasmoid instability in 2D Hall MHD simulations often leads to a single-X-line reconnection configuration, which significantly differs from fully kinetic particle-in-cell simulation results. This study shows that single-X-line reconnection is less likely to occur in 3D compared to 2D. Moreover, depending on the Lundquist number and the ratio between the system size and the kinetic scale, Hall MHD can also realize 3D self-generated turbulent reconnection. We analyze the features of the self-generated turbulent state, including the energy power spectra and the scale dependence of turbulent eddy anisotropy.

Physics↗

NASA NTRS2008

NASA Tech Briefs, November 2008

Topics covered include: Digital Phase Meter for a Laser Heterodyne Interferometer; Vision System Measures Motions of Robot and External Objects; Advanced Precipitation Radar Antenna to Measure Rainfall From Space; Wide-Band Radar for Measuring Thickness of Sea Ice; Vertical Isolation for Photodiodes in CMOS Imagers; Wide-Band Microwave Receivers Using Photonic Processing; L-Band Transmit/Receive Module for Phase-Stable Array Antennas; Microwave Power Combiner/Switch Utilizing a Faraday Rotator; Compact Low-Loss Planar Magic-T; Using Pipelined XNOR Logic to Reduce SEU Risks in State Machines; Quasi-Optical Transmission Line for 94-GHz Radar; Next Generation Flight Controller Trainer System; Converting from DDOR SASF to APF; Converting from CVF to AAF; Documenting AUTOGEN and APGEN Model Files; Sequence History Update Tool; Extraction and Analysis of Display Data; MRO DKF Post-Processing Tool; Rig Diagnostic Tools; MRO Sequence Checking Tool; Science Activity Planner for the MER Mission; UAVSAR Flight-Planning System; Templates for Deposition of Microscopic Pointed Structures; Adjustable Membrane Mirrors Incorporating G-Elastomers; Hall-Effect Thruster Utilizing Bismuth as Propellant; High-Temperature Crystal-Growth Cartridge Tubes Made by VPS; Quench Crucibles Reinforced with Metal; Deep-Sea Hydrothermal-Vent Sampler; Mars Rocket Propulsion System; Two-Stage Passive Vibration Isolator; Improved Thermal Design of a Compression Mold; Enhanced Pseudo-Waypoint Guidance for Spacecraft Maneuvers; Altimetry Using GPS-Reflection/Occultation Interferometry; Thermally Driven Josephson Effect; Perturbation Effects on a Supercritical C7H16/N2 Mixing Layer; Gold Nanoparticle Labels Amplify Ellipsometric Signals; Phase Matching of Diverse Modes in a WGM Resonator; WGM Resonators for Terahertz-to-Optical Frequency Conversion; Determining Concentration of Nanoparticles from Ellipsometry; Microwave-to-Optical Conversion in WGM Resonators; Four-Pass Coupler for Laser-Diode-Pumped Solid-State Laser; Low-Resolution Raman-Spectroscopy Combustion Thermometry; Temperature Sensors Based on WGM Optical Resonators; Varying the Divergence of Multiple Parallel Laser Beams; Efficient Algorithm for Rectangular Spiral Search; Algorithm-Based Fault Tolerance Integrated with Replication; Targeting and Localization for Mars Rover Operations; Terrain-Adaptive Navigation Architecture; Self-Adjusting Hash Tables for Embedded Flight Applications; Schema for Spacecraft-Command Dictionary; Combined GMSK Communications and PN Ranging; System-Level Integration of Mass Memory; Network-Attached Solid-State Recorder Architecture; Method of Cross-Linking Aerogels Using a One-Pot Reaction Scheme; An Efficient Reachability Analysis Algorithm.

Source record↗

DOE OSTI2022

Zero Magnetic Field Plateau Phase Transition in Higher Chern Number Quantum Anomalous Hall Insulators

The plateau-to-plateau transition in quantum Hall effect under high magnetic fields is a celebrated quantum phase transition between two topological states. It can be achieved by either sweeping the magnetic field or tuning the carrier density. The recent realization of the quantum anomalous Hall (QAH) insulators with tunable Chern numbers introduces the channel degree of freedom to the dissipation-free chiral edge transport and makes the study of the quantum phase transition between two topological states under zero magnetic field possible. Here, we synthesized the magnetic topological insulator (TI)/TI pentalayer heterostructures with different Cr doping concentrations in the middle magnetic TI layers using molecular beam epitaxy. By performing transport measurements, we found a potential plateau phase transition between C=1 and C=2 QAH states under zero magnetic field. In tuning the transition, the Hall resistance monotonically decreases from h/e2 to h/2e 2 , concurrently, the longitudinal resistance exhibits a maximum at the critical point. Our results show that the ratio between the Hall resistance and the longitudinal resistance is greater than 1 at the critical point, which indicates that the original chiral edge channel from the C=1 QAH state coexists with the dissipative bulk conduction channels. Subsequently, these bulk conduction channels appear to self-organize and form the second chiral edge channel in completing the plateau phase transition. Our study will motivate further investigations of this novel Chern number change-induced quantum phase transition and advance the development of the QAH chiral edge current-based electronic and spintronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2022

Gate-Tunable Transport in Quasi-One-Dimensional α-Bi 4 I 4 Field Effect Transistors

Bi 4 I 4 belongs to a novel family of quasi-one-dimensional (1D) topological insulators (TIs). While its β phase was demonstrated to be a prototypical weak TI, the α phase, long thought to be a trivial insulator, was recently predicted to be a rare higher order TI. Here, we report the first gate tunable transport together with evidence for unconventional band topology in exfoliated α-Bi 4 I 4 field effect transistors. We observe a Dirac-like longitudinal resistance peak and a sign change in the Hall resistance; their temperature dependences suggest competing transport mechanisms: a hole-doped insulating bulk and one or more gate-tunable ambipolar boundary channels. Our combined transport, photoemission, and theoretical results indicate that the gate-tunable channels likely arise from novel gapped side surface states, two-dimensional (2D) TI in the bottommost layer, and/or helical hinge states of the upper layers. Markedly, a gate-tunable supercurrent is observed in an α-Bi 4 I 4 Josephson junction, underscoring the potential of these boundary channels to mediate topological superconductivity.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2025

Role of the junction voltage on the overflow current in light-emitting diodes

Quantum-well (QW)-based light emitters, such as light-emitting diodes (LEDs) and lasers, of various semiconductor materials experience a reduction in their efficiency when operating at higher temperatures, a phenomenon referred to as “thermal droop.” Among the various claims on the origins of thermal droop, an increased overflow current with increasing temperatures is a common contender. Since overflow of carriers can only occur when the junction voltage 𝑉 Junction approaches the built-in voltage 𝑉 BI of any diodes, we develop a simple method relating the difference between 𝑉 Junction and 𝑉 BI to approximate the upper limit of overflow occurring in QW-based light-emitting diodes. The measured difference between 𝑉 Junction and 𝑉 BI of state-of-the-art commercial blue and green In⁢Ga⁢N-based LEDs at temperatures up to ∼450 K suggests negligible overflow. To further experimentally verify the absence of overflow, we perform temperature-dependent electron emission spectroscopy on the same commercial blue and green LEDs and find no evidence of thermally enhanced overflow carriers up to ∼450 K. In agreement with our claims that 𝑉 Junction must approach 𝑉 BI for overflow to occur, two-dimensional temperature-dependent electrical simulations of violet, blue, and green LEDs including alloy disorder and V-defects demonstrate that overflow can be significant in violet LEDs, where the small band offset between the In⁢Ga⁢N QW and Ga⁢N cladding layers due to the larger QW bandgap requires larger 𝑉 Junction to reach standard operating current densities, thereby approaching 𝑉 BI . By contrast, simulations indicate that overflow is negligible in blue and green LEDs, whose smaller QW bandgaps result in smaller quasi-Fermi levels difference to reach significant carrier injection, resulting in a 𝑉 Junction much smaller than 𝑉 BI up to large operating current densities. Considering that overflow is negligible in blue and longer-wavelength LEDs, and our observations of the large thermal droop occurring at low current densities, where Shockley-Read-Hall (SRH) recombination dominates, we conclude that thermally enhanced SRH processes are the most significant contributor to thermal droop. Finally, we also simulate the carrier densities in the different QWs of a multiple-QW LED and observe a reduction in the total carrier density at a given operating current density, which results in a decrease in the total Auger-Meitner current of the LED from just the thermally enhanced carrier redistribution among QWs without taking any possible additional temperature dependence of their recombination coefficients. Taking all this into account, minimizing thermal droop effects in LEDs can be achieved by a reduction in defect density, using wider band gap p-n junction-defining cladding layers, and operating at higher currents.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRS1984

Material growth and characterization for solid state devices

Manganese was used as the dopant for p-type InGaAs layers grown on semi-insulating (Fe-doped) and n-type (Sn-doped) InP substrates. Optical, electrical (Hall) and SIMS measurements were used to characterize the layers. Mn-diffusion into the substrate (during the growth of In GaAs) was observed only when Fe-doped substrates were used. Quaternary layers of two compositions corresponding to wavelengths (energy gaps) of approximated 1.52 micrometers were successfully grown at a constant temperature of 640 C and InP was grown in the temperature range of 640 C to 655 C. A study of the effect of pulses on the growth velocity of InP indicated no significant change as long as the average applied current was kept constant. A system for depositing films of Al2O3 by the pyrolysis of aluminum isopropoxide was designed and built. Deposited layers on Si were characterized with an ellipsometer and exhibited indices of refraction between 1.582 and 1.622 for films on the order of 3000 A thick. Undoped and p-type (Mn-doped) InGaAs epitaxial layers were also grown on Fe-doped InP substrates through windows in sputtered SiO2 (3200 A thick) layers.

Stefanakos, E. K.↗

NASA NTRS1987

The fully nonlinear development of Goertler vortices in growing boundary layers

The fully nonlinear development of small wavelength Goertler vortices in a growing boundary layer is investigated using a combination of asymptotic and numerical methods. The starting point for the analysis is the weakly nonlinear theory of Hall (1982b) who discussed the initial development of small amplitude vortices in a neighborhood of the location where they first become linearly unstable. That development is unusual in the context of nonlinear stability theory in that it is not described by the Stuart-Watson approach. In fact the development is governed by a pair of coupled nonlinear partial differential evolution equations for the vortex flow and the mean flow correction. Here the further development of this interaction is considered for vortices so large that the mean flow correction driven by them is as large as the basic state. Surprisingly it is found that such a nonlinear interaction can still be described by asymptotic means. It is shown that the vortices spread out across the boundary layer and effectively drive the boundary layer. In fact the system obtained by writing down the equations for the fundamental component of the vortex generate a differential equation for the basic state. Thus the mean flow adjusts so as to make these large amplitude vortices locally neutral. Moreover in the region where the vortices exist the mean flow has a square-root profile and the vortex velocity field can be written down in closed form. The upper and lower boundaries of the region of vortex activity are determined by a free-boundary problem involving the boundary layer equations. In general it is found that this region ultimately includes almost all of the original boundary layer and much of the free-stream. In this situation the mean flow has essentially no relationship to the flow which exists in the absence of the vortices.

Hall, Philip↗

DOE OSTI2020

Theoretical phase diagram of two-component composite fermions in double-layer graphene

Theory predicts that double layer systems realize “two-component composite fermions,” which are formed when electrons capture both intra- and inter-layer vortices, to produce a wide variety of new strongly correlated liquid and crystal states as a function of the layer separation. Recent experiments in double layer graphene have revealed a large number of layer-correlated fractional quantum Hall states in the lowest Landau level, many of which have not been studied quantitatively in previous theoretical works. We consider the competition between various liquid and crystal states at several of these filling factors (specifically, the states at total filling factors ν = 3/7, 4/9, 6/11, 4/7, 3/5, 2/3, and 4/5) to determine the theoretical phase diagram as a function of the layer separation. We compare our results with experiments and identify various observed states. In particular, we show that at small layer separations the states at total fillings ν = 3/7 and ν = 3/5 are partially pseudospin polarized, where pseudospin refers to the layer index. For certain fractions, such as ν = 3/7, interlayer correlations are predicted to survive to surprisingly large interlayer separations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRS1989

On the interaction of stationary crossflow vortices and Tollmien-Schlichting waves in the boundary layer on a rotating disc

There are many fluid flows where the onset of transition can be caused by different instability mechanisms which compete among themselves. The interaction is considered of two types of instability mode (at an asymptotically large Reynolds number) which can occur in the flow above a rotating disc. In particular, the interaction is examined between lower branch Tollmien-Schlichting (TS) waves and the upper branch, stationary, inviscid crossflow vortex whose asymptotic structure has been described by Hall (1986). This problem is studied in the context of investigating the effect of the vortex on the stability characteristics of a small TS wave. Essentially, it is found that the primary effect is felt through the modification to the mean flow induced by the presence of the vortex. Initially, the TS wave is taken to be linear in character and it is shown (for the cases of both a linear and a nonlinear stationary vortex) that the vortex can exhibit both stabilizing and destabilizing effects on the TS wave and the nature of this influence is wholly dependent upon the orientation of this latter instability. Further, the problem is examined with a larger TS wave, whose size is chosen so as to ensure that this mode is nonlinear in its own right. An amplitude equation for the evolution of the TS wave is derived which admits solutions corresponding to finite amplitude, stable, traveling waves.

Bassom, Andrew P.↗