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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10

Field-free switching of perpendicular magnetization in a ferrimagnetic insulator with spin reorientation transition

Writing magnetic bits through spin-orbit torque (SOT) switching is promising for fast and efficient magnetic random-access memory devices. While SOT switching of out-of-plane (OOP) magnetized states requires lateral symmetry breaking, in-plane (IP) magnetized states suffer from low storage density. Here, we demonstrate a field-free switching scheme using a 5-nanometer europium iron garnet film grown with a (110) orientation that shows a spin reorientation transition from OOP to IP above room temperature. This scheme combines the benefits of high-density storage in the OOP states at room temperature and the efficient field-free SOT switching in the IP states at elevated temperatures. While conventional switching of OOP bits faces the dilemma that high OOP anisotropy is required to improve bit stability and low OOP anisotropy is required to lower switching current density, this scheme disentangles this interdependence, allowing for low switching currents to be possible without sacrificing the bit stability, offering opportunities for future memory devices.

Science & Technology - Other Topics↗

Investigating and engineering spin-orbit torques in heavy metal/Co{sub 2}FeAl{sub 0.5}Si{sub 0.5}/MgO thin film structures

Current-induced spin-orbit torques (SOTs) have the potential to revolutionize magnetization switching technology. Here, we investigate SOT in a heavy metal (HM)/Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} (CFAS)/MgO thin film structure with perpendicular magnetic anisotropy (PMA), where the HM is either Pt or Ta. Our results suggest that both the spin Hall effect and the Rashba effect contribute significantly to the effective fields in the Pt underlayer samples. Moreover, after taking the PMA energies into account, current-induced SOT-based switching studies of both the Pt and Ta underlayer samples suggest that the two HM underlayers yield comparable switching efficiency in the HM/CFAS/MgO material system.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Ultra-narrow ferromagnetic resonance in organic-based thin films grown via low temperature chemical vapor deposition

We present the growth of thin films of the organic-based ferrimagnetic semiconductor V[TCNE]{sub x} (x ∼ 2, TCNE: tetracyanoethylene) via chemical vapor deposition. Under optimized growth conditions, we observe a significant increase in magnetic homogeneity, as evidenced by a Curie temperature above 600 K and sharp magnetization switching. Further, ferromagnetic resonance studies reveal a single resonance with full width at half maximum linewidth of 1.4 G, comparable to the narrowest lines measured in inorganic magnetic materials and in contrast to previous studies that showed multiple resonance features. These characteristics are promising for the development of high frequency electronic devices that take advantage of the unique properties of this organic-based material, such as the potential for low cost synthesis combined with low temperature and conformal deposition on a wide variety of substrates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Molecular qubits based on photogenerated spin-correlated radical pairs for quantum sensing

Photogenerated spin-correlated radical pairs (SCRPs) in electron donor–bridge–acceptor (D–B–A) molecules can act as molecular qubits and inherently spin qubit pairs. SCRPs can take singlet and triplet spin states, comprising the quantum superposition state. Their synthetic accessibility and well-defined structures, together with their ability to be prepared in an initially pure, entangled spin state and optical addressability, make them one of the promising avenues for advancing quantum information science. Coherence between two spin states and spin selective electron transfer reactions form the foundation of using SCRPs as qubits for sensing. We can exploit the unique sensitivity of the spin dynamics of SCRPs to external magnetic fields for sensing applications including resolution-enhanced imaging, magnetometers, and magnetic switch. Molecular quantum sensors, if realized, can provide new technological developments beyond what is possible with classical counterparts. While the community of spin chemistry has actively investigated magnetic field effects on chemical reactions via SCRPs for several decades, we have not yet fully exploited the synthetic tunability of molecular systems to our advantage. This review offers an introduction to the photogenerated SCRPs-based molecular qubits for quantum sensing, aiming to lay the foundation for researchers new to the field and provide a basic reference for researchers active in the field. We focus on the basic principles necessary to construct molecular qubits based on SCRPs and the examples in quantum sensing explored to date from the perspective of the experimentalist.

Mani, Tomoyasu (ORCID:0000000241255195)↗

90° magnetic coupling in a NiFe/FeMn/biased NiFe multilayer spin valve component investigated by polarized neutron reflectometry

We have observed 90° magnetic coupling in a NiFe/FeMn/biased NiFe multilayer system using polarized neutron reflectometry. Magnetometry results show magnetic switching for both the biased and free NiFe layers, the latter of which reverses at low applied fields. As these measurements are only capable of providing information about the total magnetization within a sample, polarized neutron reflectometry was used to investigate the reversal behavior of the NiFe layers individually. Both the non-spin-flip and spin-flip neutron reflectometry signals were tracked around the free NiFe layer hysteresis loop and were used to detail the evolution of the magnetization during reversal. At low magnetic fields near the free NiFe coercive field, a large spin-flip signal was observed, indicating magnetization aligned perpendicular to both the applied field and pinned layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electrical and optical characterizations of spin-orbit torque

To further reduce the energy consumption in spin–orbit torque devices, it is crucial to precisely quantify the spin–orbit torque (SOT) in different materials and structures. In this work, heavy metal/ferromagnet and heavy metal/ferrimagnet heterostructures are employed as the model systems to compare the electrical and optical methods for the SOT characterization, which are based on the anomalous Hall effect and the magneto-optical Kerr effect, respectively. It is found that both methods yield the consistent SOT strength for the current-driven magnetization switching measurements and the harmonic measurements. Our results suggest that the optical method is a feasible and reliable tool to investigate SOT, which is a powerful way to develop insulator-based magnetic systems in the future.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Correlations of crystallographic defects and anisotropy with magnetotransport properties in Fe x TaS 2 single crystals ( 0.23 ≤ x ≤ 0.35 )

Very large magnetoresistance discovered in single crystals of the ferromagnetic Fe-intercalated transition metal dichalcogenide, Fe 0.28 TaS 2 was attributed to the deviation of the Fe concentration from commensurate values (x = 1/4 or 1/3), which caused magnetic moment misalignments. Here we report a study of Fe x TaS 2 crystals with 0:23 ≤ x ≤ 0:35, demonstrating that crystallographic defects lead to spin disorder, which correlates with magneto-transport properties such as switching magnetic fi eld HS, magnetoresistance MR, and even zero-field resistivity ρ0 and temperature coefficient A in ρ(T) = ρ 0 + AT 2 : The ordering temperature T C and Weiss temperature θ W are maximized at the superstructure composition x = 1/4, while H s , MR, ρ 0 , and A are minimum. Conversely, at a composition intermediate between the superstructure compositions x = 1/4 and 1/3, the corresponding magneto-transport properties reach local maxima.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Sensitive magnetic force detection with a carbon nanotube resonator

We propose a technique for sensitive magnetic point force detection using a suspended carbon nanotube (CNT) mechanical resonator combined with a magnetic field gradient generated by a ferromagnetic gate electrode. Numerical calculations of the mechanical resonance frequency show that single Bohr magneton changes in the magnetic state of an individual magnetic molecule grafted to the CNT can translate to detectable frequency shifts, on the order of a few kHz. The dependences of the resonator response to device parameters such as length, tension, CNT diameter, and gate voltage are explored and optimal operating conditions are identified. A signal-to-noise analysis shows that, in principle, magnetic switching at the level of a single Bohr magneton can be read out in a single shot on timescales as short as 10 μs. This force sensor should enable new studies of spin dynamics in isolated single molecule magnets, free from the crystalline or ensemble settings typically studied.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Epitaxial Growth of Large-Scale 2D CrTe 2 Films on Amorphous Silicon Wafers With Low Thermal Budget

2D van der Waals (vdW) magnets open landmark horizons in the development of innovative spintronic device architectures. However, their fabrication with large scale poses challenges due to high synthesis temperatures (>500 °C) and difficulties in integrating them with standard complementary metal-oxide semiconductor (CMOS) technology on amorphous substrates such as silicon oxide (SiO 2 ) and silicon nitride (SiN x ). Here, a seeded growth technique for crystallizing CrTe 2 films on amorphous SiN x /Si and SiO 2 /Si substrates with a low thermal budget is presented. This fabrication process optimizes large-scale, granular atomic layers on amorphous substrates, yielding a substantial coercivity of 11.5 kilo-oersted, attributed to weak intergranular exchange coupling. Field-driven Néel-type stripe domain dynamics explain the amplified coercivity. Moreover, the granular CrTe 2 devices on Si wafers display significantly enhanced magnetoresistance, more than doubling that of single-crystalline counterparts. Current-assisted magnetization switching, enabled by a substantial spin–orbit torque with a large spin Hall angle (85) and spin Hall conductivity (1.02 × 10 7 ℏ/2e Ω -1 m -1 ), is also demonstrated. These observations underscore the proficiency in manipulating crystallinity within integrated 2D magnetic films on Si wafers, paving the way for large-scale batch manufacturing of practical magnetoelectronic and spintronic devices, heralding a new era of technological innovation.

2D magnetic thin films↗

A sample holder with integrated laser optics for an ELMITEC photoemission electron microscope

We present a new sample holder compatible with ELMITEC Photoemission Electron Microscopes (PEEMs) containing an optical lens and a mirror. With the integrated optical elements, a laser beam is focused from the back side of the sample at normal incidence, yielding a minimum spot size of about 1 μm. This opens up new possibilities for local laser excitations in PEEM experiments such as imaging all-optical magnetization switching at a small length scale.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Bistable Magnetoresistance Switching in Exchange-Coupled CoFe2O4-Fe3O4 Binary Nanocrystal Superlattices by Self-Assembly and Thermal Annealing

Self-assembly of multicomponent nanocrystal superlattices provides a modular approach to the design of metamaterials by choosing constituent nanocrystal building blocks with desired physical properties and engineering the interparticle coupling. In this work, we report the self-assembly of binary nanocrystal superlattices composed of magnetically hard CoFe2O4 nanocrystals and magnetically soft Fe3O4 nanocrystals. Both NaZn13- and MgZn2-type CoFe2O4-Fe3O4 binary nanocrystal superlattices have been formed by the liquid-air interfacial assembly approach. Exchange coupling is achieved in both types of binary superlattices after thermal annealing under vacuum at 400 degrees C. The exchange-coupled CoFe2O4-Fe3O4 binary nanocrystal superlattices show single-phase magnetization switching behavior and magnetoresistance switching behavior below 200 K. The NaZn13-type CoFe2O4-Fe3O4 binary nanocrystal superlattices annealed at 500 degrees C even exhibit bistable magnetoresistance switching behavior at room temperature constituting a simple nonvolatile memory function.

Chen, J↗

Exchange coupling in metallic multilayers with a top FeRh layer

We study magnetic properties of metallic multilayers with FeRh/ferromagnet interfaces grown by low-temperature molecular beam epitaxy. Room-temperature coercivity of the ferromagnetic layers is significantly enhanced after the growth of FeRh, proving the existence of the exchange coupling between the antiferromagnetic FeRh layer and the ferromagnetic layer. However, exchange bias is not clearly observed probably due to the presence of disordered structures, which result from the lattice strain at the FeRh/ferromagnet interfaces due to the lattice mismatch. We infer that the lattice matched interface between FeRh and ferromagnetic layers is a key parameter for controlling magnetic switching fields in such multilayer systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Enhancement of perpendicular magnetic anisotropy and spin-orbit torque in Ta/Pt/Co/Ta multi-layered heterostructures through interfacial diffusion

Heavy metal/ferromagnetic metal bi-layered structures that exhibit both strong perpendicular magnetic anisotropy (PMA) and large spin-orbit torque (SOT) efficiency have high potential in high-density, low-power memory, and logic device applications. Here, we report the enhancement of PMA and SOT in Ta/Pt/Co/Ta multi-layered heterostructures through interfacial diffusion. The structures can exhibit PMA fields of 9100 Oe at 300 K and 14100 Oe at 10 K and an effective spin Hall angle (SHA) of 0.61 ± 0.03 at 300 K. These values are larger than the corresponding values reported previously for similar heterostructures. The current-induced magnetization switching was demonstrated. The critical switching current density is on the order of 10 6 A/cm 2 , and the corresponding switching efficiency is higher than that reported for similar structures. X-ray absorption spectroscopy and high-angle annular dark-field scanning transmission electron microscopy analyses suggest a strong correlation between the observed PMA and SOT enhancement and the interfacial diffusion during the sputtering growth of the samples. It is very likely that the interfacial diffusion gives rise to enhanced spin-orbit coupling at the interface, while the latter results in enhancement in the PMA, SHA, and switching efficiency in the structure.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Design of a One-Dimensional Stacked Spin Peierls System with Room-Temperature Switching from Quantum Mechanical Predictions

Planar bis-1,2-dithiolene complex anions of a transition metal (denoted as [M(dithiolato) 2 ]- and M = Ni, Pd, or Pt ion) favor forming columnar stacks of anions in the crystal that feature S = 1/2 spin-chains, and such a spin-chain compound often undergoes a spin-Peierls-type transition, making this a promising material for conducting and magnetic switching. However, current examples show the transition temperatures are far too low for most applications. Furthermore, we use quantum mechanics to predict that changing the cation arrangement from the boat-type to the chair-type packing configuration in a spin-Peierls-type [Ni(dithiolato) 2 ]- complex will substantially stabilize the antiferromagnetic coupling, dramatically increasing the transition temperature. We estimate that the [Ni(mnt)2]-based complexes (mnt = maleonitriledithiolate) with chair-type packing of cations will lead to critical temperatures of ~170, ~252, and ~310 K for S-, Se-, and Te-based mnt, respectively. We also suggest how to stabilize the chair-type configurations of these systems.

36 MATERIALS SCIENCE↗

Current-driven spin orbit field in LaAlO{sub 3}/SrTiO{sub 3} heterostructures

We demonstrate a current tunable Rashba spin orbit interaction in LaAlO{sub 3}/SrTiO{sub 3} (LAO/STO) quasi two dimensional electron gas system. Anisotropic magnetoresistance measurements are employed to detect and understand the current-induced Rashba field. The effective Rashba field scales with the current and a value of 2.35 T is observed for a dc-current of 200 μA. The results suggest that LAO/STO heterostructures can be considered for spin orbit torque based magnetization switching.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Metal Amorphous Nanocomposite Soft Magnetic Material-Enabled High Power Density, Rare Earth Free Rotational Machines [Metal Amorphous Nanocomposite (MANC) Soft Magnetic Material (SMM) Enabled High Power Density, Rare Earth Free Rotational Machines]

Metal amorphous nanocomposites (MANCs) are promising soft magnetic materials (SMMs) for power electronic applications offering low power loss at high frequency and maintaining a relatively high flux density. While applications in certain motor designs have been recently modeled, their widespread application awaits scaled manufacturing of MANC materials and proliferation of new higher speed motor designs. A hybrid motor design based on permanent magnets and doubly salient stator and rotor is reported here to develop a compact (a factor of 10 smaller than currently possible in Si steels), high-speed (>1 kHz, electrical), high-power (>2.5 kW) motor by incorporating low loss (<10 W/kg at 1 kHz) MANCs such as recently reported Fe-Ni-based alloys. A feature of this motor design is flux focusing from the permanent magnet allowing use of lower energy permanent magnet chosen from among non-rare earth containing compositions and attractive due to constraints posed by rare earth criticality. A 2-D finite element analysis model reported here indicates that a 2.5 kW hybrid motor may be built with a permanent magnet with a 0.4 T remanence at a rotor speed of 6000 rpm. At a magnetic switching frequency of 1.4 kHz, the core loss may be limited to <3 W by selecting an appropriate MANC SMM. The projected efficiency exceeds 96% not including power loss in the controller. Under full load conditions, the flux density distributions for the SMM stay predominantly <1.3 T, the saturation magnetization of optimized FeNi-based MANC alloys. As a result, the maximum demagnetizing field in the permanent magnet is less than 2.2 × 10 5 A/m sustainable, for example, with a high-grade hard ferrite magnet.

42 ENGINEERING↗

Strain-assisted current-induced magnetization reversal in magnetic tunnel junctions: A micromagnetic study with phase-field microelasticity

Effect of substrate misfit strain on current-induced in-plane magnetization reversal in CoFeB-MgO based magnetic tunnel junctions is investigated by combining micromagnetic simulations with phase-field microelasticity theory. It is found that the critical current density for in-plane magnetization reversal decreases dramatically with an increasing substrate strain, since the effective elastic field can drag the magnetization to one of the four in-plane diagonal directions. A potential strain-assisted multilevel bit spin transfer magnetization switching device using substrate misfit strain is also proposed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗