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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10

Direct synthesis of biaxially textured nickel disilicide thin films by magnetron sputter deposition on low-cost metal tapes for flexible silicon devices

Nickel silicides are widely used as contact materials for electronic devices based on silicon (Si). However, they have been predominantly fabricated by annealing separate Ni and Si phases which leads to phase and structural complexity. In this letter, direct epitaxial growth of a single-phase nickel disilicide (NiSi 2 ) thin film by sputter deposition of NiSi 2 is achieved on low-cost and flexible Hastelloy tapes which offers a promising route to fabricate low-cost, flexible electronic devices. Biaxially textured titanium nitride (TiN) is applied as the seeding layer and the diffusion barrier under NiSi 2 . An epitaxial relationship of (001)$\langle$100$\rangle$NiSi 2 ∥ (001)$\langle$110$\rangle$TiN is observed with an extra-large lattice mismatch (~10.3%) between NiSi 2 and TiN. Both the bonding similarity and the passivation effect by hydrogen promote the epitaxial growth of NiSi 2 on TiN. The flat and smooth NiSi 2 thin film consists of grains with a size of 50–100 nm. An epitaxially grown Si film on NiSi 2 further demonstrates the potential of manufacturing high-performance Si flexible electronics with NiSi 2 /TiN/Hastelloy as the direct contact through this approach.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Properties of ZnSe/Al{sub 2}O{sub 3} Nanostructures Obtained by RF Magnetron Sputtering

Experimental data for the synthesis of ZnSe/Al{sub 2}O{sub 3} nanostructures utilizing a technology widely used in integrated circuit (IC) production are reported. It has been shown that the refractive index and size of the coherent scattering domains grow, whereas the energy bandgap decreases, with an increase in ZnSe width. It has been supposed that samples with a ZnSe width of 9 Å contain a ZnSeO{sub 3} compound and/or ZnSe ⋅ Al{sub 2}O{sub 3} complex compound. Multilayer heterostructures with a ZnSe width more than 9 Å contain cubic ZnSe nanocrystallites.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Spark Plasma Sintering of SmS-Based Ceramic Targets for the Magnetron Sputtering

The results of studying the electric-spark plasma sintering of samarium monosulfide ceramics are presented. The dependence of the microstructure and phase composition of ceramics on the temperature of spark plasma sintering is studied on the basis of the data of scanning electron microscopy, energy dispersion X-ray microanalysis, and powder X-ray diffraction of synthesized samples. It is shown that a dense, nonporous ceramics, the phase composition of which is close to the composition of the initial powder, is formed at a sintering temperature of 1200°C.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Characterizations of Binary FeCr (AISI 430) Thin Films Deposited from a Single Magnetron Sputtering Under Easy Controllable Deposition Parameters

A series of 50-nm binary FeCr martensitic thin films were sputtered from a single source made of commercial AISI 430 ferritic stainless steel under the deposition rates gradually increased from 0.03 to 0.11 nm/s with 0.02 nm/s steps at stationary condition. And, under 0.09 nm/s deposition rate, a second series of the films were also deposited under the rotation speed of their substrates which was chosen at 0, 25, and 45 rpm. As far as we are concerned, this study is the first investigation of properties of the thin films produced from AISI 430. The atomic Fe content in the films increased from 79.3 to 98.6% while atomic Cr content decreased from 20.5 to 1.2% with the increase of deposition rate from 0.03 to 0.11 nm/s. According to compositional analysis, the Fe content increased while Cr content decreased with increasing deposition rate. The reason for this may be attributed to the relatively different bond energy/melting point of metals which have different contents sputtered from source material since this physical parameter is very significant for the sputtering process. And, the Fe content in the films decreased from 84.9 to 79.2 at. % while the Cr content increased from 14.9 to 20.6 at. % when the increase of rotation speed of substrate. The crystal structure of all films was observed to have a body-centered tetragonal phase and the intensity of (110) peak varied with the atomic Fe content. The surface observations of films performed by a scanning electron microscope exposed that the number of surface grains increased with the increase of deposition rate and decreased with the increase of rotation speed. According to surface roughness analysis done by an atomic force microscope, the roughness of the film surfaces increased as the deposition rate increased. And, the roughness of the film surfaces decreased as the rotation speed increased. This has been consistent with the grain size and roughness parameters. Thus, increasing deposition rate and decreasing rotation speed of the substrate caused an increase in grain size and roughness parameters. The magnetic measurements of the films achieved, by a vibrating sample magnetometer at room temperature, displayed that the saturation magnetization, M{sub s}, values increased from 820.1 to 1700.4 emu/cm{sup 3}, the remanence magnetization, M{sub r}, values increased from 293 to 817 emu/cm{sup 3}, and the coercivity, H{sub c}, value also increased from 38 to 107 Oe with the increasing of deposition rate. It is also seen that the magnetic easy axis are in the film plane due to the shape anisotropy. With the increase rotation speed, the values of M{sub s} and M{sub r} increased and the H{sub c} decreased. It was seen that variation of Fe content in the films influences the M{sub s} values and the H{sub c} values are consistent with the surface properties. It was concluded that the deposition rate and the rotation speed of the substrate play a considerable role on the structural and related magnetic properties of the sputtered FeCr thin films, and the properties of the films can be easily controlled by changing production parameters.

36 MATERIALS SCIENCE↗

Structural and superconducting properties of Nb 3 Sn films grown by multilayer sequential magnetron sputtering

Nb 3 Sn thin films are fabricated by sequential sputtering followed by annealing at 850–1200°C in vacuum. The effects of the annealing temperature and time on the formation of Nb 3 Sn were examined. The film crystal structure, morphology, surface topography and composition were distinguished by X-ray diffraction, field-emission scanning electron microscopy, atomic force microscopy, and energy dispersive X-ray spectroscopy analysis. The superconducting properties of the films were characterized by measuring the surface resistivity by the four-point probe method. The highest critical temperature T c = 17.86 K was observed for the Nb 3 Sn films annealed at 950°C for 3 h. When the films were annealed above 1000°C for 3 h, Sn evaporation resulted in a Nb-rich film, degrading the superconducting performance. Annealing at 1200°C for 3 h resulted in evaporation of Sn leaving less than 1% Sn on the surface, as detected by energy dispersive spectroscopy, and for that film a T c of 7.9 K was observed.

36 MATERIALS SCIENCE↗

Nanotwin formation in Ni-Mo-W alloys deposited by dc magnetron sputtering

Nanotwinned metals and alloys have an attractive suite of properties, but the formation of the underlying nanostructure is generally dependent on the alloy chemistry and processing conditions. This study was undertaken to investigate the effect of deposition rate on nanotwin formation in sputter deposited Ni 84 Mo 11 W 5 that possess ultrahigh strength and stability. Specifically, deposition rates of 0.5-2.3 nm/s were examined and the grain size, texture, twin spacing and hardness were characterized. Minimal variations in the underlying nanostructure and attendant hardness were observed, elucidating a wide processing window and the importance of chemistry on the formation of nanotwins in this alloy.

36 MATERIALS SCIENCE↗

Effect of SrO Doping on LaGaO 3 Synthesis via Magnetron Sputtering

The high temperature growth behavior of epitaxial LaGaO 3 thin films with and without SrO is determined with real-time X-ray scattering. In this study, we find SrO alters the thin film growth mode of LaGaO 3 , both when predeposited on a surface as well as when SrO and LaGaO 3 are codeposited. We also find that depositing a small amount of SrO on a LaGaO 3 surface induces significant structural rearrangement in the film. We describe mechanisms under which these transformations can occur. In conclusion, the strong effect of SrO on the microstructure of La 1–x Sr x GaO 3 likely has wider implications for other ionically conducting oxide materials.

36 MATERIALS SCIENCE↗