Kinetic inductance photodetectors based on nonequilibrium response in superconducting thin-film structures
We modeled the kinetic inductance response of detectors made from disordered superconducting Nb, NbC, and MoRe films.
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We modeled the kinetic inductance response of detectors made from disordered superconducting Nb, NbC, and MoRe films.
NASA, commercial, medical, and defense applications such as Earth observation systems, astronomy, weather monitoring, thermal mapping, thermography, missile tracking, and night vision aids, etc. require high performance large format long wavelength infrared (LWIR) detector arrays in the range of 8-16 µm.
The performcance of this QWIP camera is reported including indoor and outdoor imaging.
In this paper, we discuss the development of highly uniform longwavelength QWIPs for astronomical applications.
Many commercial and government applications need high performance, large format, long-wavelength infrared (LWIR) detector arrays in the range of 6-20 mu.
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Al 0.6 Ga 0.4 N deep‐UV p–i–n avalanche photodiodes (APDs) are demonstrated grown by metalorganic chemical vapor deposition (MOCVD) on a (0001) c‐plane aluminum nitride (AlN) bulk substrate and fabricated both with and without an ion implantation process for mesa‐edge electric‐field termination. Three design considerations are taken into account: the optical absorption of the AlN bulk substrate, the photosensitivity of the APD, and the breakdown electric field. The MOCVD growth conditions of the AlGaN APD layers are optimized. Then, a detailed description of the seven device fabrication steps of the APDs is provided, which includes nitrogen ion implantation. The APDs fabricated by the ion implant process exhibit a dark‐current density under low reverse bias ≈1 × 10 −9 A cm −2 . This is one order of magnitude lower than the APD fabricated without ion implantation from the same wafer. The breakdown voltage of the APD is ≈−140 V. The calculated optical gain of the ion‐implanted APD beyond avalanche breakdown is ≈5.2 × 10 5 (current limited) and the device has an average zero‐bias photoresponse of ≈68 mA W −1 at a wavelength of 250 nm.
HRPPDs are the baseline single-photon sensors for a classic proximity-focusing RICH (pfRICH) counter, one of the Cherenkov radiation-based PID subsystems of the ePIC detector at the EIC. We report SPE time resolution of 87 ps rms for an LAPPD unit detecting Cherenkov photons in a quartz lens at a CERN PS test beam (2022). We also present the degradation and partial recovery of gain and relative efficiency of an LAPPD unit as a function of the B-field strength (up to 1.5 T) and angular orientation, measured with vertical dipole magnets at CERN (2023–2024). Finally, we report preliminary results of an accelerated ageing study performed on an HRPPD unit in Trieste laboratory (2025).
The ability to robustly and with scalability detect single photons in the visible spectrum with wavelength resolution would transform many imaging applications. Theoretical studies propose an array of carbon nanotubes (CNTs) functionalized with semiconductor quantum dots (QDs) as a physical realization of such photon sensors. In this work, we report approaches to synthesize these CNT-QD nanostructures using DNA as a smart glue to connect CNTs to QDs.
Current infrared sensing devices are based on costly materials with relatively few viable alternatives known. To identify promising candidate materials for infrared photodetection, we have developed a high-throughput screening methodology based on high-accuracy r 2 SCAN and HSE calculations in density functional theory. Using this method, we identify ten already synthesized materials between the inverse perovskite family, the barium silver pnictide family, the alkaline pnictide family, and ZnSnAs 2 as top candidates. Among these, ZnSnAs 2 emerges as the most promising candidate due to its experimentally verified band gap of 0.74 eV at 0 K and its cost-effective synthesis through Bridgman growth. BaAgP also shows potential with an HSE-calculated band gap of 0.64 eV, although further experimental validation is required. Lastly, we discover an additional material, Ca 3 BiP, which has not been previously synthesized, but exhibits a promising optical spectra and a band gap of 0.56 eV. The method applied in this work is sufficiently general to screen wider bandgap materials in high-throughput and now extended to narrow-band gap materials.
Spectral machine vision collects spectral and spatial information as three-dimensional hypercubes and digitally processes them, which causes a data bottleneck, limiting power efficiency, frame rate, and spectral-spatial resolution. This work introduces spectral kernel machines (SKMs) to overcome these bottlenecks. SKM directly compresses spectral analysis through the output photocurrent and learns from example objects to identify and classify new samples in a "sniff-and-seek" mode. We experimentally demonstrated SKMs with electrically tunable bipolar black phosphorus-molybdenum disulfide (bP-MoS2) photodiodes in the near- and mid-infrared band and silicon photoconductors in the visible band, performing versatile intelligent tasks from chemometrics to semiconductor metrology. This architecture consumed substantially less power and was more than an order of magnitude faster than existing solutions for hyperspectral image analysis, defining an intelligent imaging and sensing paradigm with intriguing possibilities.
Presentation for work done at SNL under a GS LDRD and now the PETRI GC LDRD detector thrust