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At least 181 records · Page 10

Radiometric performance of the Viking Mars lander cameras

The Viking lander cameras feature an array of 12 silicon photodiodes for electronic focus selection and multispectral imaging. Comparisons of absolute radiometric calibrations of the four cameras selected for the mission to Mars with performance predictions based on their design data revealed minor discrepancies. These discrepancies were caused primarily by the method used to calibrate the photosensor array and apparently also from light reflections internal to the array. The sensitivity and dynamic range of all camera channels are found to be sufficient for high quality pictures, providing that the commandable gains and offsets can be optimized for the scene radiance; otherwise, the quantization noise may be too high or the dynamic range too low for an adequate characterization of the scene.

Huck, F. O.↗

Cooled grating array spectrometer for 0.6-5 microns

A grating spectrometer, designed to illuminate an array of 122 InSb photodiodes with minimum aberrations and maximum speed, has been constructed. The instrument will be used on the 5 meter Hale telescope at Palomar Observatory, and is easily adaptable to telescopes of various focal ratios. A resolving power of 100-1000 can be obtained at wavelengths between 0.6 microns and 5 microns with remotely interchangeable gratings. The spectrometer is sufficiently compact to fit on the 8-inch work surface of a commercially available dewar, and uses simple on-axis spherical and paraboloidal optical elements. The camera mirror produces an f/2.5 beam which, with the 0.2 mm detectors, allows a 3-in. focal-plane aperture on the 5 meter telescope. All rays fall within a 100 microns blur circle at all points along the array. Distortions have been corrected with a tilted field flattening lens in front of the detector.

Nordholt, J. E.↗

The Viking Mars lander camera

The 7.3 kg cameras for the 1976 Viking Mars expedition feature an array of 12 silicon photodiodes, including six spectral bands for color and near-infrared imaging with an angular resolution of 0.12 deg and four focus steps for broadband imaging, with an improved angular resolution of 0.04 deg. The field of view in elevation ranges from 40 deg above to 60 deg below the horizon, and in azimuth ranges to 342.5 deg. The cameras are mounted 0.8 m apart to provide a stereo view of the area accessible to a surface sampler for biological and chemical investigations. The scanning rates are synchronized to the lander data transmission rates of 16000 bits per sec to the Viking orbiters as relay stations and 250 bits per sec directly to earth. However, image data can also be stored on a lander tape recorder. About 10 million bits of image data will be transmitted during most days of the 60-day-long mission planned for each lander.

Huck, F. O.↗

Infrared focal plane design for the Comet Rendezvous/Asteroid Flyby and Cassini Visible and Infrared Mapping Spectrometers

A focal plane assembly combining hybrid electronic components with passive optical components within a single hermetically sealed package has been designed by Cincinnati Electronics to meet the performance requirements imposed by the Comet Rendezvous/Asteroid Flyby (CRAF) and Cassini Visible and Infrared Mapping Spectrometers (VIMSs). A single line array of 256 InSb photodiodes, accessed by two 1 x 128 multiplexers, provides continuous spectral coverage from 0.85 to 5.1 microns. Intrinsic field-of-view apertures and a unique order sorting filter require critical optical alignment within the hybrid. FPA performance requirements, design approach, and critical issues are discussed.

Staller, Craig↗

Progress on Development of an Airborne Two-Micron IPDA Lidar for Water Vapor and Carbon Dioxide Column Measurements

An airborne 2 micron triple-pulse integrated path differential absorption (IPDA) lidar is currently under development at NASA Langley Research Center (LaRC). This lidar targets both atmospheric carbon dioxide (CO2) and water vapor (H2O) column measurements, simultaneously. Advancements in the development of this IPDA lidar are presented in this paper. Updates on advanced two-micron triple-pulse high-energy laser transmitter will be given including packaging and lidar integration status. In addition, receiver development updates will also be presented. This includes a state-of-the-art detection system integrated at NASA Goddard Space Flight Center. This detection system is based on a newly developed HgCdTe (MCT) electron-initiated avalanche photodiode (e-APD) array. Future plan for IPDA lidar system for ground integration, testing and flight validation will be discussed.

Singh, Upendra N.↗

Single Photon HgCdTe Avalanche Photodiode and Integrated Detector Cooler Assemblies for Space Lidar Applications

A linear mode photon counting HgCdTe avalanche photodiode (APD) focal plane array (FPA) detector was developed for space lidar applications. An integrated detector cooler assembly (IDCA) was manufactured using a miniature Stirling cooler. The HgCdTe APD demonstrated a greater than 60% photon detection efficiency from 0.9 to 4.3 μm wavelength and a dark count rate less than 250,000/s. The IDCA cooled the FPA to 110K from ambient room temperature at a total electrical power of 7 W. The IDCA has passed environmental tests, including vibration, thermal cycling and thermal vacuum tests.

Sun, Xiaoli↗

p-i-n High-Speed Photodiodes for X-RAY and Infrared Imagers Fabricated by In-Situ -Doped APCVD Germanium Homoepitaxy

Design, simulation, fabrication, and measurement have been performed using a new method for obtaining high-speed p-i-n germanium photodiodes for use in backside imaging arrays. These devices are proof-of-principal in situ-doped vertical mesa structures fabricated using single-wafer, atmospheric-pressure chemical vapor deposition (APCVD) homoepitaxy on Czochralski-grown Ge substrates. Excellent impurity profiles resulting from in situ doping, as measured by spreading-resistance profilometry, were 5 × 10 16 , 2 × 10 15 , and 2 × 10 18 (cm -3 ) for the p-type anode, i-region absorber, and n+ cathode, respectively. Scanning electron microscopy analysis revealed very-low defect densities in the epitaxial layers. The diodes, with diameters ranging 100-500 μm, exhibited excellent ideality (n = 1.15) and less than 1-μA dark current, corresponding to up to 80 kV-cm -1 electric field in the smallest devices. Avalanche breakdown bias was consistently at a magnitude of 50 V or lower. External quantum efficiencies in the near-infrared spectrum peaked at 70%. Pulsed illumination experiments, both in the infrared and X-ray regions, showed pulse rise times in the 100-140 ps range, indicating excellent applicability of this method to high-speed X-ray or infrared applications.

36 MATERIALS SCIENCE↗

Analysis and Enhancement of Low-Light-Level Performance of Photodiode-Type CMOS Active Pixel Images Operated with Sub-Threshold Reset

Noise in photodiode-type CMOS active pixel sensors (APS) is primarily due to the reset (kTC) noise at the sense node, since it is difficult to implement in-pixel correlated double sampling for a 2-D array. Signal integrated on the photodiode sense node (SENSE) is calculated by measuring difference between the voltage on the column bus (COL) - before and after the reset (RST) is pulsed. Lower than kTC noise can be achieved with photodiode-type pixels by employing "softreset" technique. Soft-reset refers to resetting with both drain and gate of the n-channel reset transistor kept at the same potential, causing the sense node to be reset using sub-threshold MOSFET current. However, lowering of noise is achieved only at the expense higher image lag and low-light-level non-linearity. In this paper, we present an analysis to explain the noise behavior, show evidence of degraded performance under low-light levels, and describe new pixels that eliminate non-linearity and lag without compromising noise.

Pain, Bedabrata↗

Vacuum ultraviolet instrumentation for solar irradiance and thermospheric airglow

A NASA sounding rocket experiment was developed to study the solar extreme ultraviolet (EUV) spectral irradiance and its effect on the upper atmosphere. Both the solar flux and the terrestrial molecular nitrogen via the Lyman-Birge-Hopfield bands in the far ultraviolet (FUV) were measured remotely from a sounding rocket on October 27, 1992. The rocket experiment also includes EUV instruments from Boston University (Supriya Chakrabarti), but only the National Center for Atmospheric Research (NCAR)/University of Colorado (CU) four solar instruments and one airglow instrument are discussed here. The primary solar EUV instrument is a 1/4 meter Rowland circle EUV spectrograph which has flown on three rockets since 1988 measuring the solar spectral irradiance from 30 to 110 nm with 0.2 nm resolution. Another solar irradiance instrument is an array of six silicon XUV photodiodes, each having different metallic filters coated directly on the photodiodes. This photodiode system provides a spectral coverage from 0.1 to 80 nm with about 15 nm resolution. The other solar irradiance instrument is a silicon avalanche photodiode coupled with pulse height analyzer electronics. This avalanche photodiode package measures the XUV photon energy providing a solar spectrum from 50 to 12,400 eV (25 to 0.1 nm) with an energy resolution of about 50 eV. The fourth solar instrument is an XUV imager that images the sun at 17.5 nm with a spatial resolution of 20 arc-seconds. The airglow spectrograph measures the terrestrial FUV airglow emissions along the horizon from 125 to 160 nm with 0.2 nm spectral resolution. The photon-counting CODACON detectors are used for three of these instruments and consist of coded arrays of anodes behind microchannel plates. The one-dimensional and two-dimensional CODACON detectors were developed at CU by Dr. George Lawrence. The pre-flight and post-flight photometric calibrations were performed at our calibration laboratory and at the Synchrotron Ultraviolet Radiation Facility (SURF) at the National Institute of Standards and Technology (NIST) in Gaithersburg, Maryland.

Woods, Thomas N.↗

An Indium Gallium Arsenide Visible/SWIR Focal Plane Array for Low Light Level Imaging

PIN photodiodes fabricated from indium gallium arsenide lattice-matched to indium phosphide substrates (In(.53)Ga(.47)As/InP) exhibit low reverse saturation current densities (JD < 10(exp -8) A/sq cm), and high shunt resistance-area products (RoA > 10(exp 6) omega-sq cm) at T=290K. Backside-illuminated, hybrid-integrated InGaAs FPAs are sensitive from 0.9 micrometers to 1.7 micrometers. 290K detectivities, D(*), greater than 10(exp 14) cm-(square root of Hz/W) are demonstrated. This represents the highest room temperature detectivity of any infrared material. The long wavelength cutoff (1.7 micrometers) makes In(.53)Ga(.47)As an idea match to the available airglow that has major peaks at 1.3 micrometers and 1.6 micrometers. The short wavelength 'cut-on' at 0.9 micrometers is due to absorption in the InP substrate. We will report on new InGaAs FPA epitaxial structures and processing techniques. These have resulted in improved performance in the form of a 10 x increase in detectivity and visible response via removal of the InP substrate. The resulting device features visible and SWIR response with greater than 15% quantum efficiency at 0.5 micrometers while maintaining the long wavelength cutoff. Imaging has been demonstrated under overcast starlight/urban glow conditions with cooling provided by a single stage thermoelectric cooler. Details on the material structure and device fabrication, quantitative characterization of spectral response and detectivity, as well as examples of night vision imagery are presented.

Cohen, Marshall J.↗

Monolithic III-V/Silicon Spatial Light Modulator

Current techniques for growth of device-quality GaAs on silicon substrates enables fabrication of silicon-based version of photodiode-coupled spatial light modulator. Monolithic photodiode-coupled light-modulator array constructed on silicon substrate by growing InAs/GaAs multiple-quantum-wells over silicon PIN diode layer. Intermediate GaAs buffer layer confines attice-misfit dislocations to vicinity of silicon. Use of silicon makes available wider range of auxiliary on-chip signal-processing circuitry for coding and decoding of data, addition or subtraction of brightness levels, spatial reformatting, and rescaling.

Maserjian, Joseph↗

Detector thickness effects on nanosecond-gated imager response

Hybrid CMOS multi-frame imagers with exposure times down to ~2 ns have made significant impacts in high energy density physics and inertial confinement fusion research. The detector thickness is a key parameter in both detector quantum efficiency and temporal response. The Icarus hybrid CMOS imager has been fabricated with Si detector thicknesses of 8, 25, and 100 µm. The temporal response of imaging sensors with exposure time down to 2 ns has been examined and compared to directly measured photodiode current. The 100-μm thick variant displays extended features related to charge carrier collection and is more susceptible to field collapse. Here, we also demonstrate charge collection time effects on spatial response.

47 OTHER INSTRUMENTATION↗

2D microspatial distribution uniformity of photon detection efficiency and crosstalk probability of multi-pixel photon counters

Two-dimensional (2D) microspatial distribution uniformity of photon detection efficiency (PDE) and optical crosstalk probability P{sub ct} of multi-pixel photon counters (MPPCs) is studied. The experimental results show that the 2D spatial distribution of P{sub ct} is obviously uneven, i.e. P{sub ct} is larger at the corners and edges of a single pixel in MPPCs, which suggest a higher electrical field in the depletion region of the pixel at the corners and edges. The nonuniformity of the 2D spatial distribution of PDE also become evident when the size of the pixels of MPPCs is small, which signifies higher nonuniformity of the electric field distribution in MPPCs with small pixel size. A method is proposed for characterization of the 2D electrical field spatial distribution uniformity in a single pixel of MPPCs, which can be used for guiding the optimisation of the fabrication process of MPPCs and their properties. This promising method can naturally be extended to any Geiger avalanche photodiodes (G-APDs) and their arrays. (laser applications and other topics in quantum electronics)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Far ultraviolet and extreme ultraviolet rocket instrumentation for measuring the solar spectral irradiance and terrestrial airglow

A sounding-rocket experiment is being developed for the study of EUV spectral irradiance and its effects on the upper atmosphere, using three solar EUV instruments devised by the Laboratory for Atmospheric and Space Physics. These include a 25-cm Rowland circle EUV spectrograph, an array of Si X-UV photodiodes, and an X-UV imager with 20 arcsec resolution of the sun.

Woods, Thomas N.↗

Multiple-Event, Single-Photon Counting Imaging Sensor

The single-photon counting imaging sensor is typically an array of silicon Geiger-mode avalanche photodiodes that are monolithically integrated with CMOS (complementary metal oxide semiconductor) readout, signal processing, and addressing circuits located in each pixel and the peripheral area of the chip. The major problem is its single-event method for photon count number registration. A single-event single-photon counting imaging array only allows registration of up to one photon count in each of its pixels during a frame time, i.e., the interval between two successive pixel reset operations. Since the frame time can t be too short, this will lead to very low dynamic range and make the sensor merely useful for very low flux environments. The second problem of the prior technique is a limited fill factor resulting from consumption of chip area by the monolithically integrated CMOS readout in pixels. The resulting low photon collection efficiency will substantially ruin any benefit gained from the very sensitive single-photon counting detection. The single-photon counting imaging sensor developed in this work has a novel multiple-event architecture, which allows each of its pixels to register as more than one million (or more) photon-counting events during a frame time. Because of a consequently boosted dynamic range, the imaging array of the invention is capable of performing single-photon counting under ultra-low light through high-flux environments. On the other hand, since the multiple-event architecture is implemented in a hybrid structure, back-illumination and close-to-unity fill factor can be realized, and maximized quantum efficiency can also be achieved in the detector array.

Zheng, Xinyu↗

Implementation of an impurity diagnostic suite on the Pegasus-III experiment

A suite of diagnostics used to assess impurity content and dynamics has been updated, upgraded, and installed on the Pegasus-III Experiment. Typical plasma parameters during local helicity injection start-up are τ shot ~10 ms, n e ~ 1 × 10 19 m –3 , and T e ~ 50 eV. The deployed diagnostics are compatible with this modest temperature and density regime and provide species identification, source localization, and estimation of radiation losses. Impurity species are determined by recording time-evolving, single line-of-sight spectra at 1.25 kfps using a SPRED (Survey, Poor Resolution, Extended Domain) vacuum ultraviolet spectrometer. SPRED is equipped with 450 g/mm grating, giving a spectral resolution of 0.33 nm and a spectral range from ~10 to 110 nm, useful to identify light impurity species in this temperature and density range. An absolutely calibrated spectrometer that collects light from the plasma at R tan = 15.9 cm and Δt ≥ 2 ms is used as a visible survey spectrometer and for continuum measurements. The radiated power from the plasma is estimated with a photodiode-based diagnostic. Two 16-channel absolute extreme ultraviolet diode arrays are placed behind pinhole apertures, resulting in 32 lines of sight at Z = 0, with a spatial resolution of 2–3 cm and a time response of 60 kHz. A photometrically calibrated collinear D α /near infrared filtered photodiode-based system measures the D α emission and around 1040 nm. All these instruments have been designed to suppress electromagnetic interference from megawatt-class switching power supplies.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Process Research on Polycrystalline Silicon Material (PROPSM)

The investigation of the performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was continued by fabricating a set of minicell wafers on a selection of 10 cm x 10 cm wafers. A minicell wafer consists of an array of small (approximately 0.2 sq cm in area) photodiodes which are isolated from one another by a mesa structure. The junction capacitance of each minicell was used to obtain the dopant concentration, and therefore the resistivity, as a function of position across each wafer. The results indicate that there is no significant variation in resistivity with position for any of the polycrystalline wafers, whether Semix or Wacker. However, the resistivity of Semix brick 71-01E did decrease slightly from bottom to top.

Culik, J. S.↗

Linear Mode HgCdTe Avalanche Photodiodes for Photon Counting Applications

An overview of recent improvements in the understanding and maturity of linear mode photon counting with HgCdTe electron-initiated avalanche photodiodes is presented. The first HgCdTe LMPC 2x8 format array fabricated in 2011 with 64 micron pitch was a remarkable success in terms of demonstrating a high single photon signal to noise ratio of 13.7 with an excess noise factor of 1.3-1.4, a 7 ns minimum time between events, and a broad spectral response extending from 0.4 micron to 4.2 micron. The main limitations were a greater than 10x higher false event rate than expected of greater than 1 MHz, a 5-7x lower than expected APD gain, and a photon detection efficiency of only 50% when greater than 60% was expected. This paper discusses the reasons behind these limitations and the implementation of their mitigations with new results.

HgCdTe↗