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NASA NTRS2010

Minnowbrook VI: 2009 Workshop on Flow Physics and Control for Internal and External Aerodynamics

Topics covered include: Flow Physics and control for Internal and External Aerodynamics (not in TOC...starts on pg13); Breaking CFD Bottlenecks in Gas-Turbine Flow-Path Design; Streamwise Vortices on the Convex Surfaces of Circular Cylinders and Turbomachinery Blading; DNS and Embedded DNS as Tools for Investigating Unsteady Heat Transfer Phenomena in Turbines; Cavitation, Flow Structure and Turbulence in the Tip Region of a Rotor Blade; Development and Application of Plasma Actuators for Active Control of High-Speed and High Reynolds Number Flows; Active Flow Control of Lifting Surface With Flap-Current Activities and Future Directions; Closed-Loop Control of Vortex Formation in Separated Flows; Global Instability on Laminar Separation Bubbles-Revisited; Very Large-Scale Motions in Smooth and Rough Wall Boundary Layers; Instability of a Supersonic Boundary-Layer With Localized Roughness; Active Control of Open Cavities; Amplitude Scaling of Active Separation Control; U.S. Air Force Research Laboratory's Need for Flow Physics and Control With Applications Involving Aero-Optics and Weapon Bay Cavities; Some Issues Related to Integrating Active Flow Control With Flight Control; Active Flow Control Strategies Using Surface Pressure Measurements; Reduction of Unsteady Forcing in a Vaned, Contra-Rotating Transonic Turbine Configuration; Active Flow Control Stator With Coanda Surface; Controlling Separation in Turbomachines; Flow Control on Low-Pressure Turbine Airfoils Using Vortex Generator Jets; Reduced Order Modeling Incompressible Flows; Study and Control of Flow Past Disk, and Circular and Rectangular Cylinders Aligned in the Flow; Periodic Forcing of a Turbulent Axisymmetric Wake; Control of Vortex Breakdown in Critical Swirl Regime Using Azimuthal Forcing; External and Turbomachinery Flow Control Working Group; Boundary Layers, Transitions and Separation; Efficiency Considerations in Low Pressure Turbines; Summary of Conference; and Final Plenary Session Transcript.

LaGraff, John E.↗

NASA NTRS1994

Three-dimensional numerical simulation of current collection by a probe in a magnetized plasma

A three-dimensional numerical model for current collection in a magnetized plasma is reported. The model is based on an electrostatic particle-in-cell code. The model yields self-consistent sheath structure including distributions of plasma and the electric potential around the body and the collection of electrons. The analytical theory of current collection by a body in a magnetized plasma yields an upper bound for the collected current determined by the conservation of energy and canonical angular momentum. The theory shows that the collected charged particles come from a cylindrical volume aligned with the magnetic shadow of the body; the maximum radius r(sub o) of this volume is determined by the body size, body potential, and the ambient magnetic field. This theory does not deal with the sheath structure around the body. The condition for the actual current to approach the upper-bound value has been a matter of debate. Our simulations reveal when and why the collected current becomes equal to its upper-bound value. Sheath size in the radial direction perpendicular to the axial ambient magnetic field is determined by the current-limiting radius r(sub o). Our simulation yields time-average current in good agreement with its upper bound. This feature of the current collection is explained as follows: Once electrons enter the sheath, some of them are freely accelerated perpendicular to the magnetic field because they are demagnetized by the large gradients in the perpendicular electric fields. Simulations show a large perpendicular acceleration, producing perpendicular energy as large as that determined by the potential on the body, especially in the region where perpendicular electric fields (E perpendicular) are the strongest. An analysis shows that the demagnetization of electrons occurs above a threshold potential on the body. This threshold condition follows from the breakdown of the adiabaticity of the electron dynamics inside the sheath.

Singh, Nagendra↗

NASA NTRS2014

5.8kV SiC PiN Diode for Switching of High-Efficiency Inductive Pulsed Plasma Thruster Circuits

Inductive Pulsed Plasma Thruster (IPPT) pulse circuits, such as those needed to operate the Pulsed Inductive Thruster (PIT), are required to quickly switch capacitor banks operating at a period of μs while conducting current at levels on the order of at least 10 kA. [1,2] For all iterations of the PIT to date, spark gaps have been used to discharge the capacitor bank through an inductive coil. Recent availability of fast, high‐power solid state switching devices makes it possible to consider the use of semiconductor switches in modern IPPTs. In addition, novel pre‐ionization schemes have led to a reduction in discharge energy per pulse for electric thrusters of this type, relaxing the switching requirements for these thrusters. [3,4] Solid state switches offer the advantage of greater controllability and reliability, as well as decreased drive circuit dimensions and mass relative to spark gap switches. The use of solid state devices such as Integrated Gate Bipolar Transistors (IGBTs), Gate Turn‐off Thyristors (GTOs) and Silicon‐Controlled Rectifiers (SCRs) often involves the use of power diodes. These semiconductor devices may be connected antiparallel to the switch for protection from reverse current, or used to reduce power loss in a circuit by clamping off current ringing. In each case, higher circuit efficiency may be achieved by using a diode that is able to transition, or 'switch,' from the forward conducting state ('on' state) to the reverse blocking state ('off' state) in the shortest amount of time, thereby minimizing current ringing and switching losses. Silicon Carbide (SiC) PiN diodes offer significant advantages to conventional fast‐switching Silicon (Si) diodes for high power and fast switching applications. A wider band gap results in a breakdown voltage 10 times that of Si, so that a SiC device may have a thinner drift region for a given blocking voltage. [5] This leads to smaller, lighter devices for high voltage applications, as well as reduced forward conduction losses, faster reverse recovery time (faster turn‐off), and lower‐magnitude reverse recovery current. In addition, SiC devices have lower leakage current as compared to their Si counterparts, and a high thermal conductivity, potentially allowing the former to operate at higher temperatures with a smaller, lighter heatsink (or no heatsink at all).

Toftul, Alexandra↗