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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10

Optical properties and carrier localization in the layered phosphide EuCd 2 P 2

The temperature dependence of the complex optical properties of the layered phosphide material EuCd 2 P 2 have been measured over a wide frequency range above and below T N ≃ 11.5 K for light polarized in the a-b planes. At room temperature, the optical conductivity is well described by a weak free-carrier component with a Drude plasma frequency of ≃ 1100 cm –1 and a scattering rate of 1/τ D ≃ 700 cm –1 , with the onset of interband absorptions above ≃ 2000 cm –1 . Two infrared-active E u modes are observed at ≃ 89 and 239 cm –1 . As the temperature is reduced the scattering rate decreases and the low-frequency conductivity increases slightly; however, below ≃ 50 K the conductivity decreases until at the resistivity maximum at ≃ 18 K (just below 2T N ) the spectral weight associated with free carriers is transferred to a localized excitation at ≃ 500 cm –1 . Below T N , metallic behavior is recovered. Interestingly, the E u modes are largely unaffected by these changes, with only the position of the high-frequency mode showing any signs of anomalous behavior. Finally, while several scenarios are considered, the prevailing view is that the resistivity maximum and subsequent carrier localization is due to the formation of ferromagnetic domains below ≃ 2 T N that result in spin-polarized clusters due to spin-carrier coupling.

36 MATERIALS SCIENCE↗

CO 2 absorption intensification using three-dimensional printed dynamic polarity packing in a bench-scale integrated CO 2 capture system

Postcombustion carbon capture using a chemical absorbent is a promising technology to reduce CO 2 emission. However, the overall construction and operating costs remain a major challenge. In order to intensify the absorption process and to reduce these costs, a novel dynamic polarity structured packing (DP packing) with alternate patterns of surface polarity has been developed to enhance local macro-scale turbulence within the advanced viscous solvent to reduce the mass transfer diffusion resistance. Here, three DP structured packings that incorporate multiple polymeric materials were fabricated using three-dimensional printing technique and evaluated through parametric testing using a bench-scale integrated CO 2 capture unit with 76.2 mm ID absorber. At optimized operating conditions, the DP packing showed a relative 22.7% increase in absorption and 20.0% decrease in energy penalty.

60 APPLIED LIFE SCIENCES↗

Giant electric field-induced second harmonic generation in polar skyrmions

Electric field-induced second harmonic generation allows electrically controlling nonlinear light-matter interactions crucial for emerging integrated photonics applications. Despite its wide presence in materials, the figures-of-merit of electric field-induced second harmonic generation are yet to be elevated to enable novel device functionalities. Here, we show that the polar skyrmions, a topological phase spontaneously formed in PbTiO3/SrTiO3 ferroelectric superlattices, exhibit a high comprehensive electric field-induced second harmonic generation performance. The second-order nonlinear susceptibility and modulation depth, measured under non-resonant 800 nm excitation, reach ~54.2 pm V −1 and ~664% V −1 , respectively, and high response bandwidth (higher than 10 MHz), wide operating temperature range (up to ~400 K) and good fatigue resistance (>10 10 cycles) are also demonstrated. Through combined in-situ experiments and phase-field simulations, we establish the microscopic links between the exotic polarization configuration and field-induced transition paths of the skyrmions and their electric field-induced second harmonic generation response. Our study not only presents a highly competitive thin-film material ready for constructing on-chip devices, but opens up new avenues of utilizing topological polar structures in the fields of photonics and optoelectronics.

Nonlinear optics↗

Developing Platinum-Group-Metal-Free Catalysts for Oxygen Reduction Reaction in Acid: Beyond the Single Metal Site

This project is to develop M (x) -N-C catalysts with dense multiple metal center (MMC) sites to meet the DOE 2025 activity target of 0.044 mA/cm 2 at 0.9 V IR-free ., as well as other goals such as durability. We have made important contributions to both catalyst development and fundamental understandings of the active sites in M-N-C catalysts in this project. We successfully made M (x) -N-C catalysts with some multiple metal center (MMC) sites by combining ionothermal carbonization with chemical vapor deposition (CVD). These catalysts, however, are not as active as the most active single-atom Fe-N-C catalysts made by the similar CVD process, owing likely to the low site density and the presence of inorganic Fe species such as iron carbides and nanoparticles. The most significant accomplishments we achieved in this project are: (1) we unraveled the formation pathway of Fe-N 4 sites during pyrolysis step-by-step and identified the trans-metalation mechanism, in collaboration with Deborah Myers and her colleagues at Argonne National Laboratory (ANL); (2) inspired by this finding, we pioneered the CVD synthesis of M-N-C catalysts (M = Mn, Fe, and Co), in which the Fe-N-C catalyst by CVD demonstrated an ORR activity of 33 mA/cm 2 at 0.9 V in H 2 -O 2 proton exchange membrane fuel cells (PEMFCs), very close to the ultimate goal of 35 mA/cm 2 of our project. This catalyst is the first Fe-N-C catalyst that contains only D1 sites without the D2 sites; whereas D1 and D2 sites have been always identified by Mossbauer in previous Fe-N-C catalysts. This finding helps to understand what the D1 and D2 sites are and their roles in catalyzing the ORR. (3) by improving the mass transport of the carbon matrix prior to the CVD process, the revised Fe-N-C catalyst made by CVD delivered a maximum power density of 0.53 W/cm 2 in H 2 -air PEMFCs. The improvement strategy was partly inspired by the computational modeling work by Adam Weber from LBNL, the Co-PI of this project, by developing, coding, and exercising a continuum level model of transport phenomena within a PGM-free catalyst layer. The model demonstrated that local resistances combined with limited site density of the PGM-free catalyst can result in limiting currents and poor polarization performance. The model also gave design guidance for impact of ECSA and overall catalyst-layer thickness. However, both Fe-N-C and Co-N-C catalysts developed by CVD showed poor durability in PEMFCS, in comparison with the traditional M-N-C catalysts synthesized via regular pyrolysis process. Consequently, we did not achieve the proposed durability targets. Despite so, we believe the FeNC-CVD catalysts with the poor durability and D1 sites only provides an excellent platform to understand the degradation mechanism of Fe-N-C in PEMFCs, the most important challenge in the development of M-N-C catalysts.

08 HYDROGEN↗

Magnetic and electron transport properties of Co 2 Si nanomagnets

In this study, magnetotransport and ferromagnetism in thin films of Co 2 Si nanoclusters are investigated experimentally and theoretically. The nanoclusters are fabricated by an inert-gas condensation-type cluster-deposition method and have an average size of 11.3 nm. Unlike the bulk Co 2 Si that exhibits a very weak net magnetic moment only below 10 K, the nanoclusters exhibit room-temperature ferromagnetism with a substantial saturation magnetization. Key features of the system are its closeness to the Stoner transition, magnetic moments induced by spin polarization starting from surface atoms, and nonuniaxial anisotropy associated with the orthorhombic crystal structure of Co 2 Si . A method is introduced to determine the effective anisotropy using the experimental magnetization data of this complex system and its relationship with the two lowest-order nonuniaxial anisotropy constants. On decreasing temperature from 300 K, the nanoclusters show electron-transport properties unusual for a ferromagnetic metal, including an increase of Hall resistivity and a nonmonotonic change of negative magnetoresistance with a peak at around 100 K. The underlying physics is explained on the basis of the large polarization of surface spins and variation in the degree of their misalignments due to temperature-dependent effective anisotropy.

36 MATERIALS SCIENCE↗

Nonvolatile memory cells from hafnium zirconium oxide ferroelectric tunnel junctions using Nb and NbN electrodes

Ferroelectric tunnel junctions (FTJs) utilizing hafnium zirconium oxide (HZO) have attracted interest as non-volatile memory for microelectronics due to ease of integration into back-end-of-line (BEOL) complementary metal oxide semiconductor fabrication. This work examines asymmetric electrode NbN/HZO/Nb devices with 7 nm thick HZO as FTJs in a memory structure, with an output resistance that can be controlled by read and write voltages. The individual FTJs are measured to have a tunneling electroresistance of 10 during the read state without significant filament conduction formation and reasonable ferroelectric performance. Endurance and remanent polarizations of up to 10 5 cycles and 20 μC/cm 2 , respectively, are measured and are shown to be dependent on the cycling voltage. Electrical measurements demonstrate how magnitude of the write pulse can modulate the high state resistance and the read pulse influences both resistance values as well as separation of resistance states. Then, by using two opposite switching FTJ devices in series, a programmable nonvolatile resistor divider is demonstrated. Measurements of these two FTJ unit memory cells show wide applicability to a BEOL microfabrication process for a re-readable, rewritable, and nonvolatile memory cell.

42 ENGINEERING↗

Anomalous Hall effect in the polar magnet Gd 3 ⁢Ni 8 ⁢Sn 4 : A candidate for hosting skyrmions

While recent theoretical studies have positioned noncollinear polar magnets with C nv symmetry as compelling candidates for realizing topological magnetic phases and substantial intrinsic anomalous Hall conductivity, experimental realizations of the same in strongly correlated systems remain rare. Here, we present a large intrinsic anomalous Hall effect and extended topological magnetic ordering in Gd 3 ⁢Ni 8 ⁢Sn 4 with hexagonal C 6v symmetry. Observation of topological Hall response, corroborated by metamagnetic anomalies in isothermal magnetization, peak/hump features in field-evolution of ac susceptibility and longitudinal resistivity suggest the signature of topological magnetic phases. The anomalous Hall effect is quantitatively accounted for by the intrinsic Berry curvature-mediated mechanism. Finally, our results underscore polar magnets as a promising platform to investigate a plethora of emergent electrodynamic responses rooted in the interplay between magnetism and topology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Battery data integrity and usability: Navigating datasets and equipment limitations for efficient and accurate research into battery aging

A tremendous commitment of resources is needed to acquire, understand and apply battery data in terms of performance and aging behavior. There are many state of performance (SOP) and state of health (SOH) metrics that are useful to guide alignment of batteries to end-use, yet how these metrics are measured or extracted can make the difference between usable, valuable datasets versus data that lacks the necessary integrity to meet baseline confidence levels for SOP/SOH quantification. This work will speak to 1) types of data that support SOP and SOH evaluations on mechanistic terms, 2) measurement conditions needed to assure high data integrity, 3) equipment limitations that can compromise data high fidelity, and 4) the impact of cell polarization on data quality. A common goal in battery research and field use is to work from a data platform that supports economical paths of data capture while minimizing down-time for battery diagnostics. An ideal situation would be to utilize data obtained during normal daily use (“pulses or cycles of convenience”) without stopping the daily duty cycles to perform dedicated SOP/SOH diagnostic routines. However, difficulties arise in trying to make use of daily duty cycle data (denoted as cycle-by-cycle, CBC) that underscores the need for standardization of conditions: temperature and duty cycles can vary over the course of a day and throughout a week, month and year; polarization can develop within an immediate cycle and throughout successive cycles as a hysteresis. If CBC data is envisioned as a data source to determine performance and aging trends, it should be recognized that polarization is a frequent consequence of CBC and thus makes it difficult to separate reversible and irreversible components to metrics such as capacity loss and resistance increase over aging. Since CBC conditions can have a major impact on data usability, we will devote part of this paper to CBC data conditioning and management. Differential analyses will also be discussed as a means to detect changing trends in data quality. Our target cell chemistries will be lithium-ion types NMC/graphite and LMO/LTO.

25 ENERGY STORAGE↗

Electron Spin Polarization and Rectification Driven by Chiral Perylene Diimide-Based Nanodonuts

The chirality-induced spin selectivity (CISS) effect allows thin-film layers of chiral conjugated molecules to function as spin filters at ambient temperature. Through solvent-modulated dropcasting of chiral l- and d-perylene diimide (PDI) monomeric building blocks, two types of aggregate morphologies, nanofibers and nanodonuts, may be realized. Spin-diode behavior is evidenced in the nanodonut structures. Stacked PDI units, which form the conjugated core of these nanostructures, dominate the nanodonut–Au electrode contact; in contrast, the AFM tip contacts largely the high-resistance solubilizing alkyl chains of the chiral monomers that form these nanodonuts. Current–voltage responses of the nanodonuts, measured by magnetic conductive AFM (mC-AFM), demonstrate substantial spin polarizations as well as spin current rectification ratios (>10) that exceed the magnitudes of those determined to date for other chiral nanoscale systems. Furthermore, these results underscore the potential for chiral nanostructures, featuring asymmetric molecular junctions, to enable CISS-based nanoscale spin current rectifiers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al 0.85 Ga 0.15 N heterostructures on single-crystal AlN substrates

The polarization difference and band offset between Al(Ga)N and GaN induce two-dimensional (2D) free carriers in Al(Ga)N/GaN heterojunctions without any chemical doping. A high-density 2D electron gas (2DEG), analogous to the recently discovered 2D hole gas in a metal-polar structure, is predicted in a N-polar pseudomorphic GaN/Al(Ga)N heterostructure on unstrained AlN. We report the observation of such 2DEGs in N-polar undoped pseudomorphic GaN/AlGaN heterostructures on single-crystal AlN substrates by molecular beam epitaxy. With a high electron density of ~4.3 ×10 13 /cm 2 that maintains down to cryogenic temperatures and a room temperature electron mobility of ~450 cm 2 /V s, a sheet resistance as low as ~320 Ω/$\Box$ is achieved in a structure with an 8 nm GaN layer. Finally, these results indicate significant potential of AlN platform for future high-power RF electronics based on N-polar III-nitride high electron mobility transistors.

42 ENGINEERING↗

Unconventional unidirectional magnetoresistance in heterostructures of a topological semimetal and a ferromagnet

Unidirectional magnetoresistance (UMR) in a bilayer heterostructure, consisting of a spin-source material and a magnetic layer, refers to a change in the longitudinal resistance on the reversal of magnetization and originates from the interaction of non-equilibrium spin accumulation and magnetization at the interface. Since the spin polarization of an electric-field-induced non-equilibrium spin accumulation in conventional spin-source materials is restricted to be in the film plane, the ensuing UMR can only respond to the in-plane component of magnetization. However, magnets with perpendicular magnetic anisotropy are highly desired for magnetic memory and spin-logic devices, whereas the electrical read-out of perpendicular magnetic anisotropy magnets through UMR is critically missing. Here, in this study, we report the discovery of an unconventional UMR in the heterostructures of a topological semimetal (WTe 2 ) and a perpendicular magnetic anisotropy ferromagnetic insulator (Cr 2 Ge 2 Te 6 ), which allows to electrically read the up and down magnetic states of the Cr 2 Ge 2 Te 6 layer through longitudinal resistance measurements.

Kao, I-Hsuan [Carnegie Mellon Univ., Pittsburgh, P↗

Stabilization of Preternatural Barium Oxidation States as an Unexpected Byproduct of β-Decay: Discovery of a New Halide Semiconductor Alloy

137 Cs has a wide range of roles in the nuclear industry. The solid material, safely encapsulated in CsCl as 137 CsCl, is stored as fission product waste from nuclear power production and legacy waste from nuclear weapons production; it has also served as a radiation source in food and sewage irradiators as well as medical devices. However, because of the solubility of the chloride salt and the relatively high specific activity of 137 Cs, damaged or broken capsules can lead to severe radiological accidents. Safe capsule design and material recycling are complicated by the unclear structural evolution during β-decay, which remains ambiguous due to the differing oxidation states of Cs (1+) and Ba (2+). Here, in this study, we use first-principles calculations to investigate the evolving structure–property relationships of Cs 1–x Ba x Cl during β-decay. Despite the well-established 2+ formal oxidation state of alkali-earth metals, we find that Ba 1+ can be stabilized in the form of a mixed-valence alloy at low concentrations. Specifically, we identify three regimes for the β-decay of 137 Cs into CsCl: Ba-doped CsCl (Ba ≤ 14%), wherein Ba has the expected 2+ oxidation state; Cs–Ba–Cl alloys, where Ba has a mix of the usual Ba 2+ and highly unusual Ba 1+ oxidation state in the form of a quasi-disordered mixed-valence alloy (Ba = 25%); and phase separation into a CsCl + BaCl 2 + Ba (m) mechanical mixture, where Ba reverts to its expected 2+ oxidation state (Ba > 25%). Surprisingly, the Cs 0.75 Ba 0.25 Cl mixed-valence alloy is a narrow indirect band gap semiconductor (1.05 eV) despite the insulating nature of both CsCl and BaCl 2 . It also exhibits strongly excitonic polarized optical properties, has glass-like ultralow thermal conductivity (directional average of 0.21 W/mK at 300 K), and shows greater resistance to deformation under both tensile and volumetric strengths compared with the original CsCl structure (e.g., shear and Young’s modulus of 9.04 and 31.62 GPa, respectively). These findings imply that transmutation of 137 Cs leads to highly unusual chemical bonding that stabilizes Ba 1+ in local regions of the quasi-disordered Cs 0.25 Ba 0.75 Cl, resulting in anomalous physical properties. Moreover, this discovery provides valuable insight for safe nuclear waste capsule design, which can aid in preventing environmental or human exposure to radioactive materials.

Fuhr, Addis S. [Oak Ridge National Laboratory (ORN↗

Tailoring coherent charge transport in graphene by deterministic defect generation

Harnessing the wave-nature of charge carriers in solid state devices, electron optics investigates and exploits coherent phenomena, in analogy with optics and photonics. Typically, this requires complex electronic devices leveraging macroscopically coherent charge transport in two-dimensional electron gases and superconductors. Here, collective coherent effects are induced in a simple counterintuitive architecture by defect engineering. Deterministically introduced lattice defects in graphene enable the phase coherent charge transport by playing the role of potential barriers, instead of scattering centres as conventionally considered. Thus, graphene preserves its quasi-ballistic quantum transport and can support phase-matched charge carrier waves. Based on this approach, multiple electronic Fabry-Pèrot cavities are formed by creating periodically alternating defective and pristine nano-stripes through low energy electron-beam irradiation. Indeed, defective stripes behave as partially reflecting mirrors and resonantly confine the charge carrier waves within the pristine areas, giving rise to Fabry-Pèrot resonant modes. These modes experimentally manifest as sheet resistance oscillations, as also confirmed by Landauer-Büttiker simulations. Moreover, these coherent phenomena survive up to 30 K for both polarities of charge carriers, contrarily to traditional monopolar electrostatically created Fabry-Pèrot interferometers. Our study positions defective graphene as an innovative platform for coherent electronic devices, with potential applications in nano and quantum technologies.

Melchioni, Nicola↗

Structural basis for varying drug resistance of SARS-CoV-2 M pro E166 variants

ABSTRACT Severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) main protease (M pro ) has an essential role in the virus lifecycle and, accordingly, it is a target for antiviral drugs. Multiple studies have identified an M pro mutation (E166V) that confers strong resistance to clinically relevant inhibitors, including nirmatrelvir, but the underlying mechanism is not fully understood. Here, we report on crystal structures of SARS-CoV-2 M pro E166V in complex with nirmatrelvir, ensitrelvir, and bofutrelvir. The structures suggest that resistance is caused in part by the loss of a direct hydrogen bond and also, especially for nirmatrelvir, by a steric clash with the substituted valine residue. In comparison, the binding of bofutrelvir shows greater flexibility, which may help alleviate this steric effect and allow bofutrelvir to fit the mutant active site despite the loss of a direct polar contact. Thermal stability analyses also corroborate E166V most severely affecting the binding of nirmatrelvir and, to lesser and different extents, ensitrelvir and bofutrelvir. We further show that E166I causes even more severe nirmatrelvir resistance, whereas E166A and E166L have much milder effects. These studies shed light on the molecular mechanisms of a key M pro drug resistance mutation and may help inform the design of next-generation inhibitors. IMPORTANCE Using a combination of high-resolution X-ray crystallographic and biochemical analyses, we reveal the molecular mechanisms by which a mutation in the severe acute respiratory syndrome coronavirus 2 main protease (M pro ) confers strong resistance against clinically relevant antiviral drugs that inhibit M pro activity. The results presented here may help inform the design of next-generation inhibitors to combat the problem of therapy resistance.

Microbiology↗

A Direct Ammonia Fuel Cell with a KOH-Free Anode Feed Generating 180 mW cm −2 at 120 °C

The motivations to operate the direct ammonia fuel cell (DAFC) with no addition of aqueous base, include facilitated fuel management and prevention of corrosion and shunt currents in the DAFC stack. We describe here a polymer electrolyte DAFC, operating at a cell temperature (T cell ) of 120 °C on ammonia and water alone as anode feed, that demonstrated peak power of 180 mW cm −2 —a record for this type of fuel cell. We offer a detailed analysis of polarization curves recorded for PE-DAFCs in the T cell range of 60 °C–120 °C, allowing to estimate the effects of KOH-free operation on the ionic and faradaic resistances, R i and R F , that determine together the value of R app , CL – an , the apparent resistance of the anode catalyst layer. The latter resistance drops ten times between 60 °C and 120 °C as result mainly of the drop in R F . Consequently, DAFC performance at T cell > 100 °C improves substantially, including the cell performance on a KOH-free anode feed. The demsontrated performance levels reported here for KOH-free DAFCs support further development of this type of ammonia/air fuel cells.

Achrai, Ben↗

0D, 1D, 2D, and 3D simulations of an idealized coaxial impedance-matched Marx generator

We have conducted 0D, 1D, 2D, and 3D simulations of an idealized coaxial impedance-matched Marx generator (IMG) []. The 0D calculations were conducted with a four-element circuit model; the 1D, 2D, and 3D calculations were conducted with highly resolved, fully electromagnetic representations. The IMG consists of 30 stages distributed axially and connected electrically in series. Each stage is powered by two bricks separated by 180° and connected electrically in parallel. Each brick comprises two opposite-polarity capacitors in series with a single switch. The bricks drive an internal impedance-matched coaxial transmission line terminated by a resistive load. The simulations neglect effects due to the switch-triggering circuit, the capacitor-charging circuit, external conducting boundaries, and reactive components of the load. We find dimensionality does not significantly affect the electrical power delivered by the IMG to its load: peak load powers estimated by the 0D, 1D, 2D, and 3D simulations agree to within 1%. The 3D calculations demonstrate that electromagnetic power radiated by the bricks, and axial gaps between stages, reduces the peak load power by less than ∼ 1 % . Each simulation assumes the load impedance is 34% above that at which the load power is maximized. Operating an IMG with such an overmatched load offers several advantages while decreasing the peak load power by only 2%. The 0D, 1D, 2D, and 3D models outlined herein could be adapted to assess computationally competing IMG designs, and conduct a variety of numerical IMG experiments, an IMG is constructed. Published by the American Physical Society 2024

43 PARTICLE ACCELERATORS↗

Magnetic switching in Weyl semimetal-superconductor heterostructures

Here, we present a switching mechanism that utilizes the proximity coupling between the surface spin texture of a Weyl semimetal and a superconductor in a Weyl semimetal-superconductor Weyl semimetal trilayer heterostructure. We show that the superconductivity in the middle layer can be fully suppressed by the surface spin texture of the Weyl semimetals in the presence of an external magnetic field, but it can be recovered again by only changing the field direction. The restoration of the middle-layer superconductivity indicates a sharp transition to a low-resistance state. This sharp switching effect, realizable using a Weyl semimetal because of its strong spin-momentum locking and surface spin polarization, is a promising avenue for novel superconducting spin-valve applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes

Studies of the radiation tolerance and electrical behavior of gallium nitride (GaN) based devices are important for the next generation of high-power and high-voltage electronics that may be subjected to harsh environments such as nuclear reactor and fusion facilities, particle accelerators, and post-denotation environments. Here, in this work, we study the behavior of Ga-polar and N-polar GaN Schottky diodes before and after exposure to fast and thermal + fast neutrons. Temperature-dependent current–voltage (I–V) and circular transmission line method (CTLM) measurements were used to study the electrical characteristics. A strong reduction in reverse leakage current and an increase in differential resistance in forward bias were observed after neutron irradiation. Thermionic emission (TE), Frenkel–Poole (FP) emission, and Fowler–Nordheim (FN) tunneling models were used to explain the forward and reverse I–V characteristics pre- and post-irradiation. The study confirms that Ga-polar and N-polar GaN Schottky diodes exhibit different electrical responses to fast and thermal neutron irradiations. The reverse bias characteristics of N-polar diodes are less affected after the fast neutron irradiation compared to Ga-polar diodes, while in the forward bias region, the electrical behavior after fast and thermal neutron irradiations is similar in Ga-polar and N-polar diodes. The results indicate that the role of orientation should be considered in the design of GaN-based radiation-tolerant electronics.

42 ENGINEERING↗