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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10

Cryogenic insulation strength and bond tester

A method and apparatus for testing the tensile strength and bonding strength of sprayed-on foam insulation attached to metal cryogenic fuel tanks is described. A circular cutter is used to cut the insulation down to the surface of the metal tank to form plugs of the insulation for testing in situ on the tank. The apparatus comprises an electromechanical pulling device powered by a belt battery pack. The pulling device comprises a motor driving a mechanical pulling structure comprising a horizontal shaft connected to two bell cracks which are connected to a central member. When the lower end of member is attached to a fitting, which in turn is bonded to a plug, a pulling force is exerted on the plug sufficient to rupture it. The force necessary to rupture the plug or pull it loose is displayed as a digital read-out.

Schuerer, P. H.↗

A study on sub-bandgap photoexcitation in nitrogen- and boron-doped diamond with interdigitated device structure

Diamond is an ultrawide-bandgap semiconductor suitable for high power devices that require high current carrying capacity, high blocking voltages, and smaller form factors. We investigated various diamond structures for extrinsic photoconductive semiconductor switches, including an insulating high-pressure high-temperature type Ib (highly nitrogen-doped) substrate, a chemical vapor deposited (CVD) type IIa (unintentionally doped) substrate, a CVD grown semiconducting boron-doped epilayer on a type IIa substrate, and boron-implanted type Ib and IIa substrates. Using these samples, we fabricated and characterized planar interdigitated photoconductive switches with 30 μm, electrode gaps. 532 and 1064 nm Nd:YAG laser pulses with energies up to 3.5 mJ/pulse were used to trigger the switches. Photoresponses were measured at bias voltages ranging from 10 to 100 V, corresponding to electric fields of 3.3–33 kV/cm. In this field range, the type Ib device exhibited the highest average on/off-state current ratio, on the order of 10 11 , when triggered with 0.8 mJ/pulse, 532 nm laser pulses. However, only the CVD grown boron-doped epilayer and boron implanted IIa devices showed decent sensitivity to 1064 nm.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Electric propulsion device for high power applications

An electric propulsion device is disclosed having an anode and a cathode. The propulsion device includes a discharge annulus having the anode adjacent an end region thereof. At least one inlet aperture is adjacent the anode, the aperture(s) having propellant gas flow therethrough into the discharge annulus. The propellant gas has an ionization potential. Opposed, dielectric walls define the annulus, with at least one of the opposed dielectric walls having pores therein, the pores having cooling gas flow therethrough into the discharge annulus and substantially adjacent the opposed dielectric wall(s). The cooling gas has an ionization potential higher than the ionization energy of the propellant gas. The cooling gas is adapted to substantially prevent at least one of secondary electron emission and sputtering of the dielectric walls.

Roy, Subrata↗

SiC Technology

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Neudeck, Philip G.↗

Silicon Carbide Technology

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Neudeck, Philip G.↗

A Scalable & Non-Destructive Characterization Strategy to Study Semiconductor/Dielectric Interfaces and Predict Wafer-Level Device Performance

The defect density present at the dielectric-semiconductor interface in an MOS structure directly influences the channel carrier characteristics in semiconductor devices, especially in wide bandgap material systems used in power devices. While these trap defects are typically quantified through electrical characterization of MOS-capacitor test structures, this treatment offers very little insight into the physical nature of interface defects. Such shortcomings demand a physical characterization strategy to guide fabrication optimization. X-ray photoelectron spectroscopy (XPS) is suggested as a viable technique to determine chemical data for dielectric interfaces formed using atomic layer deposition (ALD) on GaN substrates. Previously, 1-D XPS characterization has confirmed the presence of a Ga x O y interlayer between ALD dielectrics and the GaN substrate. In this work, XPS data is serially collected to form 2-D images of an ALD-Al 2 O 3 /GaN interface as a proof-of-concept experiment for in-situ XPS quality monitoring during ALD processing. The information provided by this work reveals some of the challenges for incorporating XPS characterization as an in-situ strategy during fabrication of GaN-based devices. Separately, electrical mapping of a 2-D array of ALD-Al 2 O 3 /GaN MOS-capacitor devices provide a means to quantify the spatial variations in interface quality across a single wafer. Physical characterization techniques, such as time-of-flight secondary ion mass spectroscopy, provide additional chemical information about the Al 2 O 3 /Ga x O y /GaN structure that complement the electrical mapping results. This analysis shows that a higher Ga x O y content correlates with higher interface state defects for trap energies deep in the band gap.

42 ENGINEERING↗

Organic Direct-Bonded-Copper-Based Rapid Prototyping for Silicon Carbide Power Module Packaging

Silicon carbide (SiC) power devices are playing ever- growing roles in high-power-density power electronics converters by offering benefits such as high voltage rating, fast transients, and high thermal performance. Organic direct-bonded copper (ODBC)-based packaging, due to its ductility and ease of han- dling, allows the possibility of a more flexible layout design that may better tap the potential of SiC benefits. In this work, an ODBC-based prototyping routine is developed that accelerates the iterations of packaging layout design with low cost. The properties of ODBC and its handling are briefly introduced, and tools and fabrication steps are explained. Following this routine, a 1.2-kV SiC half-bridge power module is designed and fabricated with the focus on sub-nanohenry ultra-low loop inductance. Simulation and experimental validation are also conducted.

25 ENERGY STORAGE↗

Gallium phosphide energy converters

Betavoltaic power supplies based on gallium phosphide can supply long term low-level power with high reliability. Results are presented for GaP devices powered by Ni-63 and tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/cm(exp 2) have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. A small demonstration system has been assembled that generates and stores enough electricity to light up an LED.

Sims, P. E.↗

Programmable Logic Application Notes

This column will be provided each quarter as a source for reliability, radiation results, NASA capabilities, and other information on programmable logic devices and related applications. This quarter will continue a series of notes concentrating on analysis techniques with this issue's section discussing: Digital Timing Analysis Tools and Techniques. Articles in this issue include: SX and SX-A Series Devices Power Sequencing; JTAG and SXISX-AISX-S Series Devices; Analysis Techniques (i.e., notes on digital timing analysis tools and techniques); Status of the Radiation Hard reconfigurable Field Programmable Gate Array Program, Input Transition Times; Apollo Guidance Computer Logic Study; RT54SX32S Prototype Data Sets; A54SX32A - 0.22 micron/UMC Test Results; Ramtron FM1608 FRAM; and Analysis of VHDL Code and Synthesizer Output.

Katz, Richard↗

Long-Term Reliability of a Hard-Switched Boost Power Processing Unit Utilizing SiC Power MOSFETs

Silicon carbide (SiC) power devices have demonstrated many performance advantages over their silicon (Si) counterparts. As the inherent material limitations of Si devices are being swiftly realized, wide-band-gap (WBG) materials such as SiC have become increasingly attractive for high power applications. In particular, SiC power metal oxide semiconductor field effect transistors' (MOSFETs) high breakdown field tolerance, superior thermal conductivity and low-resistivity drift regions make these devices an excellent candidate for power dense, low loss, high frequency switching applications in extreme environment conditions. In this paper, a novel power processing unit (PPU) architecture is proposed utilizing commercially available 4H-SiC power MOSFETs from CREE Inc. A multiphase straight boost converter topology is implemented to supply up to 10 kilowatts full-scale. High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) characterization is performed to evaluate the long-term reliability of both the gate oxide and the body diode of the SiC components. Finally, susceptibility of the CREE SiC MOSFETs to damaging effects from heavy-ion radiation representative of the on-orbit galactic cosmic ray environment are explored. The results provide the baseline performance metrics of operation as well as demonstrate the feasibility of a hard-switched PPU in harsh environments.

Ikpe, Stanley A.↗

Design of a thrust stand for high power electric propulsion devices

A thrust stand for use with high power electric propulsion devices was designed and tested. The thrust stand was specifically tailored to the needs of a 100 to 250 kW magnetoplasmadynamic (MPD) thruster program currently in progress at the NASA Lewis Research Center. The thrust stand structure was built as an inverted pendulum arrangement, supported at the base by water-cooled electrical power flexures. Thrust stand tares due to thruster discharge current were demonstrated to be negligible. Tares due to an applied field magnet current, after considerable effort, were reduced to less than 3.0 percent of measured thrust. These tares, however, could be determined independently and subtracted from the indicated thrust measurement. A detailed description is given for the thrust stand design and operation with a 100 kW class MPD device. Other thrust stand tares due to vibration and thermal effects are discussed, along with issues of accuracy and repeatability.

Haag, Thomas W.↗

Design of a thrust stand for high power electric propulsion devices

A thrust stand for use with high power electric propulsion devices has been designed and tested. The thrust stand was specifically tailored to the needs of a 0.1 to 0.25 MW magnetoplasmadynamic (MPD) thruster program currently in progress at the NASA Lewis Research Center. The thrust stand structure was built as an inverted pendulum arrangement, supported at the base by water-cooled electrical power flexures. Thrust stand tares due to thruster discharge current were demonstrated to be negligible. Tares due to an applied field magnet current, after considerable effort, were reduced to less than 3.0 percent of measured thrust. These tares, however, could be determined independently and subtracted from the indicated thrust measurement. The paper gives a detailed description of the thrust stand design and operation with a 0.1 MW class MPD device. Other thrust stand tares due to vibration and thermal effects are discussed, along with issues of accuracy and repeatability.

Haag, Thomas W.↗

Intermediate-phase engineering via dimethylammonium cation additive for stable perovskite solar cells

Achieving the long-term stability of perovskite solar cells is arguably the most important challenge required to enable widespread commercialization. Understanding the perovskite crystallization process and its direct impact on device stability is critical to achieving this goal. The commonly employed dimethyl-formamide/dimethyl-sulfoxide solvent preparation method results in a poor crystal quality and microstructure of the polycrystalline perovskite films. In this work, we introduce a high-temperature dimethyl-sulfoxide-free processing method that utilizes dimethylammonium chloride as an additive to control the perovskite intermediate precursor phases. By controlling the crystallization sequence, we tune the grain size, texturing, orientation (corner-up versus face-up) and crystallinity of the formamidinium (FA)/caesium (FA) y Cs 1-y Pb(I x Br 1-x )3 perovskite system. A population of encapsulated devices showed improved operational stability, with a median T80 lifetime (the time over which the device power conversion efficiency decreases to 80% of its initial value) for the steady-state power conversion efficiency of 1,190 hours, and a champion device showed a T80 of 1,410 hours, under simulated sunlight at 65 degrees C in air, under open-circuit conditions. In conclusion, this work highlights the importance of material quality in achieving the long-term operational stability of perovskite optoelectronic devices.

14 SOLAR ENERGY↗

Comparative Evaluation of the Single-Phase Shift and Extended-Phase Shift Control for Isolated DC-DC Converter

Abstract: This paper presents a comparative evaluation of the Single-Phase Shift (SPS) and Extended-Phase Shift (EPS) controls for the isolated DC-DC Converter. The analysis is based on the power regulation range, flexibility of operation, current stress on power devices, system efficiency while focusing on the issue of backflow power, control complexity, design and implementation overhead, and stability of the entire system. It is also examined how the backflow influences power circulation and increases current stress. Here, the Dual Active Bridge (DAB) Converter is employed to assess the performance of the control methods. Compared to SPS control, EPS offers a wider power regulation range, greater flexibility, lower current stress, and better system efficiency. However, EPS has increased control complexity, design and implementation overhead, and often requires sophisticated feedback control loops. The comparison is made through mathematical modeling of power transfer, backflow, and current stress. Simulation results validate the comparative analysis presented.

Amir, Aamir [The University of Alabama (UA)]↗

Artificial Intelligence for Power Electronics in Electric Vehicles: Challenges and Opportunities

We report progress in the field of power electronics within electric vehicles has generally been driven by conventional engineering design principles and experiential learning. Power electronics is inherently a multidomain field where semiconductor physics and electrical, thermal, and mechanical design knowledge converge to achieve a practical realization of desired targets in the form of conversion efficiency, power density, and reliability. Due to the promising nature of artificial intelligence in delivering rapid results, engineers are starting to explore the ways in which it can contribute to making power electronics more compact and reliable. Here, we conduct a brief review of the foray of artificial intelligence in three distinct subtechnologies within a power electronics system in the context of electric vehicles: semiconductor devices, power electronics module design and prognostics, and thermal management design. The intent is not to report an exhaustive literature review, but to identify the state of the art and opportunities for artificial intelligence to play a meaningful role in power electronics design from a mechanical and thermal standpoint, as well as to discuss a few promising future research directions.

33 ADVANCED PROPULSION SYSTEMS↗

High-Field Fast-Risetime Pulse Failures in 4H- and 6H-SiC pn Junction Diodes

We report the observation of anomalous reverse breakdown behavior in moderately doped (2-3 x 10(exp 17 cm(exp -3)) small-area micropipe-free 4H- and 6H-SiC pn junction diodes. When measured with a curve tracer, the diodes consistently exhibited very low reverse leakage currents and sharp repeatable breakdown knees in the range of 140-150 V. However, when subjected to single-shot reverse bias pulses (200 ns pulsewidth, 1 ns risetime), the diodes failed catastrophically at pulse voltages of less than 100 V. We propose a possible mechanism for this anomalous reduction in pulsed breakdown voltage relative to dc breakdown voltage. This instability must be removed so that SiC high-field devices can operate with the same high reliability as silicon power devices.

Neudeck, Philip G.↗

Carbon Nanotubes as Resonators for RF Spectrum Analyzers

Electromechanical resonators of a proposed type would comprise single carbon nanotubes suspended between electrodes (see Figure 1). Depending on the nanotube length, diameter, and tension, these devices will resonate at frequencies in a range from megahertz through gigahertz. Like the carbon-nanotube resonators described in the preceding article, these devices will exhibit high quality factors (Q values), will be compatible with integration with electronic circuits, and, unlike similar devices made from silicone and silicone carbide, will have tunable resonant frequencies as high as several GHz. An efficient electromechanical transduction method for the carbon nanotube resonators is provided by the previously observed variation of carbon nanotube length with charge injection. It was found that injection of electrons or holes, respectively, lengthens or shortens carbon nanotubes, by amounts of the order of a percent at bias levels of a few volts. The charge-dependent length change also enables a simple and direct means of tuning the resonant frequency by varying the DC bias and hence the tension along the tube, much like tuning a guitar string. In its basic form, the invention is a tunable high-Q resonator based on a suspended carbon nanotube bridge with attached electrodes (see Figure 1). An applied DC bias controls the tension and thus the frequency of resonance. If one were to superimpose a radio-frequency (RF) bias on the DC bias, then the resulting rapid variation in tension or length would set the tube into vibration. If, on the other hand, the carbon nanotube were to be set into vibration by interaction between an incident RF electric field and electric charges in the nanotube, then the vibration would give rise to an RF signal output that is proportional to the RF amplitude at the resonance frequency. Because the transduction mechanism is extremely sensitive and the active volume is only a few nanometers in diameter, this device is not well suited for use as a microwave power device. Instead, this carbon nanotube mechanical resonator would be useful primarily as part of a highly precise, sensitive, frequency-selective detector. An array of such devices featuring nanotubes of different lengths (and thus different frequencies) could be made to operate as a highspeed spectrum analyzer (see Figure 2)

Hunt, Brian↗

Re-Verification of the IRHN57133SE and IRHN57250SE for Single Event Gate Rupture and Single Event Burnout

The vertical metal oxide semiconductor field-effect transistor (MOSFET) is a widely used power transistor onboard a spacecraft. The MOSFET is typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single event gate rupture (SEGR) or single event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. These radiation hardened devices are not immune to SEGR or SEB but, rather, can exhibit them at a much more damaging ion than their non-radiation hardened counterparts. See [1] through [5] for more information.This effort was to investigate the SEGR and SEB responses of two power MOSFETs from IR(the IRHN57133SE and the IRHN57250SE) that have recently been produced on a new fabrication line. These tests will serve as a limited verification of these parts, but it is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Single Event Gate Rupture (SEGR)↗