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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

A Prototype High-Voltage Pulsed Power Supply for Control of the ITER Shattered Pellet Injection System Flyer Plate Valve

A high-voltage pulsed power supply (HVPPS) has been designed, prototyped, and tested for driving an eddy current actuated propellant valve for the International Thermonuclear Experimental Reactor (ITER) disruption mitigation system. The high-voltage (HV) dc supply output voltage is software programmable, and the energy storage capacitor bank can be readily reconfigured as 200, 400, 600, and 800 μ F, enabling testing and optimization of both the valve drive and valve systems. Multiple system parameters are monitored before, during, and after each firing of the valve. The system parameters are both displayed and stored for further analysis. Control of the setup, firing sequence, and data collection is automated using a LabVIEW-based control program. The programmability and reconfigurability of this system collectively provide a flexible and robust platform for system refinement and optimization. In this article, a summary of the system will be provided including operational sequences, HV switching and associated triggering methods and circuits, and results measured while firing a solid frozen pellet. Additionally, planned refinement activities toward meeting all requirements for ITER integration will be discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Unraveling spin entanglement using quantum gates with scanning tunneling microscopy-driven electron spin resonance

Quantum entanglement is a fundamental resource for quantum information processing, and its controlled generation and detection remain key challenges in scalable quantum architectures. Here, we numerically demonstrate the deterministic generation of entangled spin states in a solid-state platform by implementing quantum gates via electron spin resonance combined with scanning tunneling microscopy (ESR-STM). Using two titanium atoms on a MgO/Ag(100) substrate as a model, we construct a two-qubit system whose dynamics are coherently manipulated through tailored microwave pulse sequences. We generate Bell states by implementing a Hadamard gate followed by a controlled-NOT gate, and evaluate its fidelity and concurrence using the quantum-master equation-based code TimeESR. Our results demonstrate that ESR-STM can create entangled states with significant fidelity. This study paves the way for the realization of atom-based quantum circuits and highlights ESR-STM as a powerful tool for probing and engineering entangled states on surfaces.

Switzer, Eric D. [Donostia International Physics C↗
DOE OSTI2023

Quench Protection by Putting a Current-pulse Into a Coil Center-Tap in HTS Coils

Forty years ago, Lawrence Berkeley Laboratory (LBL) tested a pulsed current quench protection system for a high current density two-meter diameter two-layer solenoid at 4.5 K with a stored energy of 8.5 MJ. The energy needed to protect this magnet was 13.4 kJ from an electrolytic capacitor system charged to voltages 800 V. This method also involved the use of a well-coupled shorted secondary circuits and quench-back. The applicability of this quench protection method to HTS magnets operating at temperatures >25 K could be of interest. There are a number of questions that should be asked, as follows: 1) Can this method work for HTS coils operating at temperatures >25 K? 2) Are there batteries or capacitors that can store 2 MJ or more that have short enough discharge times for quench protection at voltages less than 2 kV? 3) Is this quench protection system cost low enough to be reasonable?

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Development of a 250 Degree C 15kV Supercascode Switch Using SiC JFET Technology

Tetra Corporation is developing a pulsed power drilling system for the geothermal industry. The system requires a high temperature switching technology to replace the existing technology based on Si thyristors with a temperature limit of 150 degrees C. This work focuses on the development of such switch based on a Supercascode configuration using SiC JFET technology. The development presented contains thermal models, packaging design and processes, circuit simulations and prototypes of both the Supercascode switch and the high temperature packaged SiC JFETs.

cascaded switch↗
DOE OSTI2022

Simulating a pulsed-power-driven plasma with ideal MHD

We describe a simple practical numerical method for simulating plasma driven within a vacuum chamber by a pulsed power generator. Typically, in this type of simulation, the vacuum region adjacent to the plasma is approximated as a highly resistive, light fluid; this involves computationally expensive solvers describing the diffusion of the magnetic field through this fluid. Instead, we provide a recipe for coupling pulsed power generators to the magnetohydrodynamics (MHD) domain by approximating the perfectly insulating vacuum as a light, perfectly conducting, inviscid MHD fluid and discuss the applicability of this counter-intuitive technique. This much more affordable ideal MHD representation is particularly useful in situations where a plasma exhibits interesting three-dimensional phenomena, either due to the design of the experiment or due to developing instabilities. We verified that this coupling recipe works by modeling an exactly solvable flux compression generator as well as a self-similar Noh-like solution and demonstrated convergence to the theoretical solution. We also showed examples of simulating complex three-dimensional pulsed power devices with this technique. We release our code implementation to the public.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Surface Charge Distribution Mapping Using an Electrostatic Probe

Undesired accumulation of charge on dielectric materials causing electrostatic discharges can be an issue in pulsed power systems and electrical systems in general. As such, an understanding of surface charge distribution, charge accumulation, and decay is required. An in-house no-contact electrostatic probe designed with a 2 mm resolution was fabricated to measure and map surface charge distribution. Designed as a contactless instrument, the probe consisting of a metal rod and low leakage amplifier circuit probes the electric potential near the surface. A scan of the surface then provides the raw data, a potential distribution. The actual probe response - i.e., the surface charge to voltage transfer function, is accounted for in post-processing. This is accomplished via an Inverse Wien Filter - a technique often applied in image processing - to deconvolve the probe response from the measured data. A commercially available electrostatic probe, the Trek 341B meter with a 3455ET probe, capable of measuring +/- 20 kV was compared to the in- house probe that is designed to cover a wider range from +/- 35 kV. A resolution better than the simple probe resolution is achieved through the distribution’s scanning voltage method and deconvolution. Applying repeated scans, surface charge decay was tracked on various polymer materials to determine the material and environment dependence; materials included were PA6, PTFE, and others. As an example of material dependence, samples charged to 20 kV at 65% humidity experience full charge decay in approximately 45 seconds for PA5 (152 mm dia.), while it took about 100 times longer for PTFE (51 mm dia.) to observe the same decay/redistribution of charge.

36 MATERIALS SCIENCE↗
DOE OSTI2021

High-speed feedback control of an oscillating magnetic helicity injector using a graphics processing unit

A real-time control system has been developed to control the amplitude, phase, and offset of bulk plasma parameters inside an oscillating magnetic helicity injector. Control software running entirely on an Nvidia Tesla P40 graphical processing unit is able to receive digitizer inputs and send response patterns to a Pulse Width Modulation (PWM) controller with a minimum control loop period of 12.8μs. With an input digitization rate of 10 MS/s, a three-parameter proportional integral differential controller is shown to be sufficient to inform the PWM controller to drive the desired oscillating plasma waveform with a frequency of 16.6 kHz that is located near the resonance of a coupled RLC circuit. In particular, the temporal phase of the injector waveform is held within 10 degrees of the target value. Control is demonstrated over the toroidal modal structure of the imposed magnetic perturbations of the helicity injection system, allowing a new class of discharges to be studied.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Ensuring a Nuclear Power Plant Safe State Following an EMP Event - Task 7 Deliverable: EMP Testing of Secondary Coupling to Instrumentation Cables

Sandia National Laboratories performed tests to address the potential vulnerability concerns of a coupled High-Altitude Electromagnetic Pulse (HEMP) inducing secondary coupling onto critical instrumentation and control cables in a nuclear power plant, with specific focus on early-time HEMP. Three types of receiving cables in nine configurations were tested to determine transfer functions between two electrically separated cables referenced to the common mode input current on the transmitting cable. One type of transfer function related the input short circuit current and resulting open circuit voltage on the receiving cable. The other transfer function related the input short circuit current and the resulting short circuit current on the receiving cable. A 500 A standard HEMP waveform was input into the transfer functions to calculate peak coupling values on the receiving cables. The highest level of coupling using the standard waveform occurred when cables were in direct contact, with a peak short circuit current of 85 A and open circuit voltage of 9.8 kV, while configurations with separated cables predicted coupling levels of less than 5 A or 500 V.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
DOE OSTI2020

Scaling of pulsed nanosecond capillary plasmas at different specific energy deposition

Nano-second, capillary discharges (nCDs) are unique plasma sources in their ability to sustain high specific energy deposition ω dep approaching 10 eV/molecule in molecular gases. This high energy loading on short timescales produces both high plasma densities and high densities of molecular exited states. These high densities of electrons and excited states interact with each other during the early afterglow through electron collision quenching and associative ionization. In this paper we discuss results from a two-dimensional computational investigation of a nCD sustained in air at a pressure of 28.5 mbar and with a voltage amplitude 20 kV. Discharges were investigated for two circuit configurations—a floating low voltage electrode and with the low voltage electrode connected to ground through a ballast resistor. The first configuration produced a single ionization wave from the high to low voltage electrode. The second produced converging ionization waves beginning at both electrodes. With a decrease of the tube radius, the velocity of the ionization fronts decreased while the shape of the ionization wave changed from the electron density being distributed smoothly in the radial direction, to being hollow shaped where there is a higher electron density near the tube wall. For sufficiently small tubes, the near-wall maxima merge to have the higher density on the axis of the capillary tube. In the early afterglow, the temporal and radial behavior of the N 2 (C 3 Π u ) density is a sensitive function of ω dep due to electron collision quenching. Finally, these trends indicate that starting from ω dep $\geqslant$ 0.3 eV/molecule, it is necessary to take into account interactions of electrons with electronically excited species during the discharge and early afterglow.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

An RC snubber design method to achieve optimized switching noise‐loss trade‐off of cascode GaN HEMTs

Abstract The cascode gallium nitride high electron mobility transistors (GaN HEMTs) are very vulnerable to self‐sustained turn‐off oscillation due to their cascode configuration. This paper presents a design approach for the RC snubber of cascode GaN HEMTs to achieve the optimized noise‐loss trade‐off. At first, an analytical model is proposed to describe the instability of cascode GaN HEMTs‐based test circuits utilizing RC snubber. Based on the model, an analytical approach is proposed to achieve two optimum RC snubber designs S1 and S2. The design S1 can satisfactorily dampen the oscillation with minimum switching losses. The design S2 achieves maximum effective damping on the oscillation at a minimized cost of additional power losses. In the end, the accuracy of the proposed model is validated by the double‐pulse test and good agreement is obtained.

Xue, Peng↗
DOE OSTI2025

Characterizing and Modeling the Influence of Geometry on the Performance of Superconducting Nanowire Cryotrons

The scaling of superconducting nanowire detectors to larger arrays is often limited by room-temperature-readout cabling. Cryogenic integrated circuits constructed from nanowire cryotrons, or nanocryotrons, can address this limitation by performing signal processing on chip. In this study, we characterize key performance metrics of the nanocryotron to elucidate its potential as a logical element in cryogenic integrated circuits and develop an electro-thermal model to connect material parameters with device performance. We find that the performance of the nanocryotron depends on the device geometry, and trade-offs are associated with optimizing the gain, jitter, and energy dissipation. Here, we demonstrate that nanocryotrons fabricated on niobium nitride can achieve a grey zone less than 210 nA wide for a 5 ns long input pulse corresponding to a maximum achievable gain of 48 dB, an energy dissipation of less than 20 aJ per operation, and a jitter of less than 60 ps.

Superconductor↗
DOE OSTI2020

Flow Z-pinch plasma production on the FuZE experiment

The Fusion Z Pinch Experiment (FuZE) investigates sheared-flow stabilization of classic m = 0 and m = 1 instabilities in Z pinches with an embedded axial flow. FuZE consists of a 100 cm coaxial plasma accelerator, where neutral gas is ionized and accelerated in a pulsed electrical discharge, followed by a 50 cm assembly region, where pinches are formed. Maintaining the pinch requires continuous plasma injection provided by a deflagration mode in the coaxial accelerator. Two discharge modes, with and without deflagration, are investigated on FuZE. Pinch formation is observed with deflagration only. Plasma velocities in the assembly region are found to match the E × B velocity estimated in the accelerator based on a 1D circuit model, indicating that a 1D MHD approximation may offer a valid description of the plasma in the accelerator channel. The velocity of magnetic field propagation is found to agree with the snowplow model based on momentum conservation, and the lifetime of the pinch is shown to be in agreement with constraints imposed by mass conservation.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Design and testing of a high perveance sheet beam electron gun

This paper presents the design, prototype engineering, and initial testing of a relatively low-voltage, high aspect ratio electron gun for versatile pulsed power applications. The sheet beam, diode electron gun is designed for (23–25) kV voltage and 6 µA/V1.5, as is required for x-band klystron, as a part of a compact Klylac delivering electron beam energy in the MeV range. The gun prototype was engineered, built, and tested using a Scandinova M1-0.5 modulator. Beam loss on the anode aperture is evaluated from transient waveforms and equivalent circuit modeling.

Instruments & Instrumentation↗
DOE OSTI2023

Dancing the Quantum Waltz: Compiling Three-Qubit Gates on Four Level Architectures

Superconducting quantum devices are a leading technology for quantum computation, but they face several challenges. Gate errors, coherence errors and a lack of connectivity all contribute to low fidelity results. In particular, connectivity restrictions enforce a gate set that requires three-qubit gates to be decomposed into one- or two-qubit gates. This substantially increases the number of two-qubit gates that need to be executed. However, many quantum devices have access to higher energy levels. We can expand the qubit abstraction of |0〉 and |1〉 to a ququart which has access to the |2〉 and |3〉 state, but with shorter coherence times. This allows for two qubits to be encoded in one ququart, enabling increased virtual connectivity between physical units from two adjacent qubits to four fully connected qubits. This connectivity scheme allows us to more efficiently execute three-qubit gates natively between two physical devices.We present direct-to-pulse implementations of several three-qubit gates, synthesized via optimal control, for compilation of three-qubit gates onto a superconducting-based architecture with access to four-level devices with the first experimental demonstration of four-level ququart gates designed through optimal control. We demonstrate strategies that temporarily use higher level states to perform Toffoli gates and always use higher level states to improve fidelities for quantum circuits. We find that these methods improve expected fidelities with increases of 2x across circuit sizes using intermediate encoding, and increases of 3x for fully-encoded ququart compilation.

Litteken, Andrew↗
DOE OSTI2026

Short Circuit Detection and Voltage Sense for High Voltage Ionization Tube Power Supplies

Fermilab's PIP-II upgrade requires new rack-mounted power supplies for Beam Loss Monitor (BLM) ionization tubes compatible with the microTCA 4.1 standard, supporting high-side current measurement for short circuit detection, voltage sense telemetry, and low-side current measurement for beam loss readout. This work presents the design and preliminary schematic of such a supply. A resistive current sensing approach was chosen over inductive, optical, and Hall-effect alternatives for its independence from cable length and component availability. A 500 mΩ inline shunt steps the 2 kV common mode voltage down to roughly 70 V, producing a ~27 μV pulse during a short, which is amplified 500x, compared against a 14-bit DAC threshold, and latched to drive a fault line. Voltage sense steps the 2 kV output down at a 1V/1000V ratio, buffers it with a low bias current amplifier, and digitizes it via a 24-bit ADC over SPI. Onboard power is regulated from 12 V down to isolated 5 V and 3.3 V rails, with capacitive isolation on FPGA communication lines. Lumped parameter models were developed for the ionization tube (0.327 nF, 20 to 200 GΩ dynamic resistance) and the RG-58 coaxial cable to support the design. Component selection is complete and a preliminary schematic has been drawn in Altium Designer, forming the foundation for future prototyping and validation.

Yu, Kellen [Cornell U.]↗
DOE OSTI2023

Pulsed Laser Annealed Ga Hyperdoped Poly‐Si / SiO x Passivating Contacts for High‐Efficiency Monocrystalline Si Solar Cells

Polycrystalline Si ( poly ‐Si)‐based passivating contacts are promising candidates for high‐efficiency crystalline Si solar cells. We show that nanosecond‐scale pulsed laser melting (PLM) is an industrially viable technique to fabricate such contacts with precisely controlled dopant concentration profiles that exceed the solid solubility limit. We demonstrate that conventionally doped, hole‐selective poly ‐Si/SiO x contacts that provide poor surface passivation of c ‐Si can be replaced with Ga‐ or B‐doped contacts based on non‐equilibrium doping. We overcome the solid solubility limit for both dopants in poly ‐Si by rapid cooling and recrystallization over a timescale of ∼25 ns. We show an active Ga dopant concentration of ∼3 × 10 20 cm −3 in poly ‐Si which is six times higher than its solubility limit in c ‐Si, and a B dopant concentration as high as ∼10 21 cm −3 . We measure an implied open‐circuit voltage of 735 mV for Ga‐doped poly ‐Si/SiO x contacts on Czochralski Si with a low contact resistivity of 35.5 ± 2.4 mΩ cm 2 . Scanning spreading resistance microscopy and Kelvin probe force microscopy show large diffusion and drift current in the p ‐ n junction that contributes to the low contact resistivity. Our results suggest that PLM can be extended for hyperdoping of other semiconductors with low solubility atoms to enable high‐efficiency devices.

14 SOLAR ENERGY↗
DOE OSTI2024

Integration of EDWARD readout architecture in full-field fluorescence imaging detector

Data bandwidth, timing resolution and resource utilization in readouts of radiation detectors are a constant challenge. Event driven solutions are pushing against well-trenched framed solutions. The idea for an asynchronous readout architecture called EDWARD ( E vent- D riven W ith A ccess and R eset D ecoder) was presented at the TWEPP 2021 conference. Here we show the progress of our work which resulted in two chip prototypes. The first one, named 3FI65P1, is a full device with the analog pixel circuitry suited for full-field fluorescence imaging. It is already manufactured, and preliminary results are presented. Finally, the second chip, named EDWARD65P1, contains digital pulse generators with Poisson-exponential distribution in each pixel for extraction of the performance matrix of the EDWARD architecture alone.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

Probing Excited-State Dynamics of Transmon Ionization

The fidelity and quantum nondemolition character of the dispersive readout in circuit QED are limited by unwanted transitions to highly excited states at specific photon numbers in the readout resonator. This observation can be explained by multiphoton resonances between computational states and highly excited states in strongly driven nonlinear systems, analogous to multiphoton ionization in atoms and molecules. In this work, we utilize the multilevel nature of high-𝐸 𝐽 /𝐸 𝐶 transmons to probe the excited-state dynamics induced by strong drives during readout. With up to ten resolvable states, we quantify the critical photon number of ionization, the resulting state after ionization, and the fraction of the population transferred to highly excited states. Moreover, using pulse shaping to control the photon number in the readout resonator in the high-power regime, we tune the adiabaticity of the transition and verify that transmon ionization is a Landau-Zener-type transition. We further extend these methods to a typical transmon with 𝐸 𝐽 /𝐸 𝐶 ≈ 55 and probe the offset-charge dependence of ionization dynamics in a timed-resolved manner. Our experimental results agree well with the theoretical prediction from a semiclassical driven transmon model and may guide future exploration of strongly driven nonlinear oscillators.

cavity quantum electrodynamics↗