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At least 181 records · Page 10

Activated recombinative desorption: A potential component in mechanisms of spacecraft glow

The concept of activated recombination of atomic species on surfaces can explain the production of vibrationally and translationally excited desorbed molecular species. Equilibrium statistical mechanics predicts that the molecular quantum state distributions of desorbing molecules is a function of surface temperature only when the adsorption probability is unity and independent of initial collision conditions. In most cases, the adsorption probability is dependent upon initial conditions such as collision energy or internal quantum state distribution of impinging molecules. From detailed balance, such dynamical behavior is reflected in the internal quantum state distribution of the desorbing molecule. This concept, activated recombinative desorption, may offer a common thread in proposed mechanisms of spacecraft glow. Using molecular beam techniques and equipment available at Los Alamos, which includes a high translational energy 0-atom beam source, mass spectrometric detection of desorbed species, chemiluminescence/laser induced fluorescence detection of electronic and vibrationally excited reaction products, and Auger detection of surface adsorbed reaction products, a fundamental study of the gas surface chemistry underlying the glow process is proposed.

Cross, J. B.↗

Depletion layer recombination effects on the radiation damage hardness of gallium arsenide cells

The significant effect of junction depletion layer recombination on the efficiency of windowed GaAs cells was demonstrated. The effect becomes more pronounced as radiation damage occurs. The depletion is considered for 1 MeV electron fluences up to 10 to the 16th power e/sq m. The cell modeling separates damage in emitter and base or buffer layers using different damage coefficients is reported. The lower coefficient for the emitter predicts less loss of performance at fluences greater than 10 to the 15th power e/sq cm. A method for obtaining information on junction recombination effects as damage proceeds is described; this enables a more complete diagnosis of damage to be made.

Garlick, G. F. J.↗

Experimental apparatus for photon/ion coincidence measurements of dielectronic recombination

An inclined beams apparatus for the measurement of absolute cross sections for dielectronic recombination between free electrons and singly or multiply charged ions is described. The collision products, a photon and a lower-charge-state ion, are detected in delayed coincidence. Measurements of dielectronic recombination in C(3+) are described to illustrate the use of the apparatus and techniques. Verification of the calibrations and operation of the apparatus is demonstrated through measurements of charge transfer and electron impact excitation.

Gardner, L. D.↗

Determination of lifetime and surface recombination velocity of p-n junction solar cells and diodes by observing transients

The unified view of transient methods for the determination of recombination lifetime tau and back surface recombination velocity S presented here for silicon solar cells and diodes attempts to define limitations of existing methods and to evolve improvements. The presence of sizable junction capacitance for silicon devices under forward voltage invalidates the use of conventional open-circuit voltage decay (OCVD) and reverse recovery. This led Green (1983) to his method of compensated open-circuit voltage decay, in which the addition of an external resistor shunting the solar cell partially corrects for the presence of the junction capacitance. Setting this resistance to zero produces an electrical short-circuit current-decay method, which has the advantage of enabling determination of both tau and S. In an alternate approach, one may insert the functional dependence of the junction capacitance on forward voltage. This new method, denoted by the acronym OCVDCAP, enables the determination of tau with apparently greater accuracy than that obtained by previous methods utilizing voltage transients. But OCVDCAP has in common with the previous methods that it determines tau only and has practical utility only for determining tau of long-base devices. This means that it is useful only for thick base regions. In principle, however, it has an advantage over short-circuit current decay: it requires only pressure contacts, not ohmic contacts, and therefore may be used to determine tau after key processing steps in manufacturing.

Lindholm, Fredrik A.↗

Variations in the electrical short-circuit current decay for recombination lifetime and velocity measurements

An improved measurement system for electrical short-circuit current decay is presented that extends applicability of the method to silicon solar cells having an effective lifetime as low as 1 microsec. The system uses metal/oxide/semiconductor transistors as voltage-controlled switches. Advances in theory developed here increase precision and sensitivity in the determination of the minority-carrier recombination lifetime and recombination velocity. A variation of the method, which exploits measurements made on related back-surface field and back-ohmic contact devices, further improves precision and sensitivity. The improvements are illustrated by application to 15 different silicon solar cells.

Jung, Tae-Won↗

Radio recombination lines from fast shocks in molecular clouds, with application to bipolar flows

Detailed shock calculations are presented which demonstrate that fast dissociative shocks in molecular clouds produce detectable radio recombination lines and continuum lines, in addition to optical and infrared recombination lines. The theoretical results are applied to outflows from young stellar objects; bipolar flows are treated as massive, radiative winds. The calculations support Hasegawa and Akabane's (1984) interpretation of the H51-alpha line from Orion-KL as being due to a shock, and are consistent with the two-shock model of Chernoff, Hollenbach, and McKee (1982).

Mckee, Christopher F.↗

Recombination line intensities for hydrogenic ions. II - Case B calculations for C VI, N VII and O VIII

The intensities of recombination lines formed in extended, optically thim, photoionized plasmas such as those found in PN, H II regions, and winds of certain hot stars are an important source of information on chemical abundances and can sometimes provide estimates of electron temperature. In this paper, the intensities of the recombination lines of C VI, N VII, and O VIII are calculated, accounting for both electron and heavy particle collisions and assuming case B of Baker and Menzel. The computational procedure is explained. The intensities of lines formed by transitions n(u) - n(l) are tabulated for n(u) of 50 or less, n(l) of 29 or less, at log N(e) = 4(1)13 and 10 values of electron temperature in the interval 10,000 K to 500,000 K.

Storey, P. J.↗

Atom-atom inelastic collisions and three-body atomic recombination in weakly ionized argon plasmas

A stationary collisional-radiative model including both inelastic electron-atom and atom-atom collisions is used to examine nonequilibrium weakly ionized argon plasmas with atomic densities 10 to the 16th to 10 to the 20th/cu cm, temperatures below 6000 K, and with different degrees of radiation trapping. It is shown that three-body atomic recombination becomes important at high particle densities. Comparison is made between the present approach and Thomson's theory for atomic recombination.

Braun, C. G.↗

Intersubband Auger recombination and population inversion in quantum-well subbands

The intersubband-Auger-recombination time of electrons under population-inversion conditions in a single quantum well is calculated by taking into account momentum- and energy-conservation rules, and by employing Fermi-Dirac statistics. The screened matrix element of the electron-electron interaction and the overlap integral are calculated for an infinitely deep quantum well. The results are in a good agreement with published experimental data. As a major nonradiative process, the Auger recombination is related to threshold current of infrared lasers based on intersubband transitions in quantum-well structures. The realization of these devices and other limitations to achieving population inversion are discussed. In view of the results, development of these lasers for emission wavelengths corresponding to energies below the LO-phonon energy seems feasible.

Borenstain, S.↗

Mechanistic model for catalytic recombination during aerobraking maneuvers

Several mechanistic models are developed to predict recombination coefficients for use in heat shield design for reusable surface insulation (RSI) on aerobraking vehicles such as space shuttles. The models are applied over a temperature range of 300 to 1800 K and a stagnation pressure range of 0 to 3,000 Pa. A four parameter model in temperature was found to work best; however, several models (including those with atom concentrations at the surface) were also investigated. Mechanistic models developed with atom concentration terms may be applicable when sufficient data becomes available. The requirement is shown for recombination experiments in the 300 to 1000 K and 1500 to 1850 K temperature range, with deliberate concentration variations.

Willey, Ronald J.↗

Potential technology transfers of research on low-temperature carbon monoxide-oxygen recombination catalysts

Results from research on catalytic recombination of CO-O2 for stable closed-cycle operation of CO2 lasers hold much promise for a variety of technology transfer. Expansion of CO2 laser remote sensing applications toward chemical detection and pollution monitoring would certainly be expected. However, the catalysts themselves may be especially effective in low-temperature oxidation of a number of chemicals in addition to CO. It is therefore of interest to compare the CO-O2 catalysts with chemical systems designed for chemical sensing, air purification and process catalysis. Success in understanding the catalytic mechanisms of the recombination of CO-O2 could help to shed light on how catalyst systems operate. New directions in low-temperature oxidation catalysts, coatings for chemical sensors and sorbents for air purification could well emerge.

Poziomek, Edward J.↗

Aeronomical determinations of the quantum yields of O (1S) and O (1D) from dissociative recombination of O2(+)

Data from the visible-airglow experiment on the Atmosphere Explorer-E satellite have been used to determine the quantum yields of O (1S) and O (1D) from the dissociative recombination of O2(+) based on a constant total recombination rate from each vibrational level. A range of values between 0.05 and 0.18 has been obtained for the quantum yield of O (1S) and shows a positive correlation with the extent of the vibrational excitation of O2(+). The quantum yield of O (1D) has been measured to be 0.9 + or - 0.2, with no apparent dependence on the vibrational distribution of O2(+).

Yee, Jeng-Hwa↗

Oxygen recombination in the sealed nickel-cadmium cell

The purpose of this study was to determine what parameters are most critical for controlling overcharge pressure in a sealed nickel cadmium cell. Topics covered in viewgraph format are: parameters examined; oxygen evolution and recombination; experimental test description; and effect of parameters on recombination rate.

Zimmerman, Al H.↗

Solvent-tuned intramolecular charge-recombination rates in a conjugated donor-acceptor molecule

The nonradiative charge-recombination rates from the charge-transfer state of a new conjugated donor-acceptor molecule (p-cyano-p-prime-methylthiodiphenylacetylene) can be tuned over almost an order of magnitude by varying the polarity of the solvent. These measurements of intramolecular recombination show a turnover of rates as a function of emission energy, consistent with the 'normal' and 'inverted' behavior of Marcus theory. Steady-state spectra and time-resolved measurements make it possible to quantitatively compare thermal and optical electron-transfer rates as a function of driving force and demonstrate their correspondence.

Khundkar, Lutfur R.↗

Hydrogen recombination at high optical depth and the spectrum of SN 1987A

A general theory is presented for hydrogen recombination line formation in an expanding medium in which some of the lines are optically thick. This theory is used to calculate the time evolution of the hydrogen lines of SN 1987A at t equal to or greater than 150 days, assuming that the supernova envelope is a homologously expanding uniform sphere. The theoretical luminosities and ratios of the recombination lines agree remarkably well with the observations. For the first 2 yr, the supernova envelope is optically thick to Balmer continuum. For t equal to or less than 400 days, hydrogen is ionized primarily from the n = 2 level by Balmer continuum photons, which are provided partly by the two-photon decay of the 2s state and partly by emission lines of heavy elements.

Xu, Yueming↗

Recombination line intensities for hydrogenic ions. III - Effects of finite optical depth and dust

The effect on the recombination spectrum of hydrogen arising from: (1) finite optical thickness in the Lyman lines; (2) the overlapping of Lyman lines near the series limit; (3) the absorption of Lyman lines by dust or photoionization, and (4) the long-wave radiation emitted by dust is examined. Full account is taken of electron and heavy particle collisions in redistributing energy and angular momentum. It is seen that each of these deviations from the classical Case B leads to observable effects, and that dust influences the recombination spectrum in characteristic ways that may make possible new observational constraints on dust properties in nebulosities. On the basis of these calculations it is believed that the uncertainty in the determination of the helium-to-hydrogen abundance ratio in the universe may be larger than currently claimed.

Hummer, D. G.↗

Model for oxygen recombination on silicon-dioxide surfaces. II - Implications toward reentry heating

This paper briefly reviews the model for recombination of oxygen on a silicon-dioxide surface presented in detail in a previous paper. New data supporting the model is also presented. The ramifications of the model toward the production of excited molecular oxygen is examined as it pertains to surface heating. A reentry simulation is given and compared to STS-2 reentry data, and conclusions are drawn as to the implications of the recombination model toward reentry heating. A possible buffering of the heating above a critical temperature associated with the physics of the model is also discussed.

Jumper, E. J.↗

Dielectronic recombination as a function of electric field strength

Dielectronic recombination (DR) is the dominant recombination mechanism at coronal temperatures and densities. We present a procedure for calculating DR rate coefficients as a function of electric field strength and apply this method to carbon ions. We focus on the competing effects of enhancement by plasma microfields and rate decrease through collisional excitation and ionization. We find that, in the case of C(3+), a significant rate enhancement results, leading to a reinterpretation of C IV emission-line intensities in the sun and late-type stars. We further consider how macroscopic electric fields, in particular motional electric fields, can affect DR rate coefficients, demonstrating dramatic rate increases for a number of the carbon ions.

Reisenfeld, Daniel B.↗