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Results for “Reliability of power device”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Evaluating switch lifetime in soft-switched single-stage differential-mode SST

The reliability of semiconductor switches in single-stage differential-mode solid-state transformers (DM-SSTs) has not been systematically evaluated under soft-switching operation and realistic grid conditions. This paper presents a switch-level reliability analysis for soft-switched and hard-switched DM-SST configurations by integrating converter-specific power loss modeling with empirical lifetime prediction. Analytical derivation of device current profiles specific to the DM-SST is used to characterize electrothermal stress, which is then mapped to lifetime using degradation models obtained from power cycling tests (PCTs). Applied to realistic SST load profiles and grid voltage variations, this approach provides a probabilistic prediction of switch lifetime for the DM-SST. Lifetime estimates for both SiC MOSFETs and Si IGBTs are presented, offering insight into device degradation under converter operating conditions. The results quantify the reliability benefits of soft switching in single-stage SSTs, highlighting how switching dynamics influence long-term switch degradation.

14 SOLAR ENERGY↗
DOE OSTI2023

PV Inverter Systems Enabled by Monolithically Integrated SiC based Four Quadrant Power Switch (4-QPS) [BiDFET]

The purpose of this project was to develop a new breed of Power Conversion Systems (PCS) for PV integration that is enabled by the newly developed 4-Quadrant Single Die SiC Power Semiconductor Switches (4-QPS) or also referred to as “Bidirectional FET (BIDFET)”. This work includes semiconductor die development, advanced packaging, converter design, development, and testing of 4-QPS enabled hardware prototypes at 1 kW (for single phase residential application) and 10 kW (for three phase commercial application). The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four-quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs, and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. The matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac–ac and ac–dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS1993

A dual output pressure, high reliability, long storage life gas delivery vessel assembly

A Gas Vessel Assembly has been developed that delivers purified, very low moisture content gas at two different output pressures. High pressure gas is delivered at up to 6,700 psi, and low pressure gas regulated to 130 psi is also delivered via a second outlet over a wide range of flow rates. The device is extremely lightweight (less than 1 lb) and compact, affords maximum mechanical integrity, high reliability (0.9999 at 95 percent confidence level), and offers extremely long storage life. Specialized design and fabrication techniques are employed that guarantee gas purity and negligible leakage for more than 20 years, in widely varying conditions of storage temperature, humidity, altitude, and vibration environments. The technology offers unique advantages in fast, high pressure discharge applications. For example, when combined with a cryostat, cryogenic temperatures can be achieved such as those used in missile seeker technology. The technology has many additional applications such as: emergency power sources for safety devices such as those needed in nuclear power plants, refineries, collision cushioning devices, superconductor cooling devices, emergency egress systems, miniature mechanical devices that employ gas bearings, and other areas where long storage, extremely high reliability and/or high energy density sources are required.

Maya, Isaac↗
NASA NTRS2004

Survey of Software Assurance Techniques for Highly Reliable Systems

This document provides a survey of software assurance techniques for highly reliable systems including a discussion of relevant safety standards for various industries in the United States and Europe, as well as examples of methods used during software development projects. It contains one section for each industry surveyed: Aerospace, Defense, Nuclear Power, Medical Devices and Transportation. Each section provides an overview of applicable standards and examples of a mission or software development project, software assurance techniques used and reliability achieved.

Nelson, Stacy↗
DOE OSTI2020

Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics

Researchers have been extensively studying wide-bandgap (WBG) semiconductor materials such as gallium nitride (GaN) with an aim to accomplish an improvement in size, weight, and power of power electronics beyond current devices based on silicon (Si). However, the increased operating power densities and reduced areal footprints of WBG device technologies result in significant levels of self-heating that can ultimately restrict device operation through performance degradation, reliability issues, and failure. Typically, self-heating in WBG devices is studied using a single measurement technique while operating the device under steady-state direct current measurement conditions. However, for switching applications, this steady-state thermal characterization may lose significance since the high power dissipation occurs during fast transient switching events. Therefore, it can be useful to probe the WBG devices under transient measurement conditions in order to better understand the thermal dynamics of these systems in practical applications. In this work, the transient thermal dynamics of an AlGaN/GaN high electron mobility transistor (HEMT) were studied using thermoreflectance thermal imaging and Raman thermometry. Also, the proper use of iterative pulsed measurement schemes such as thermoreflectance thermal imaging to determine the steady-state operating temperature of devices is discussed. These studies are followed with subsequent transient thermal characterization to accurately probe the self-heating from steady-state down to submicrosecond pulse conditions using both thermoreflectance thermal imaging and Raman thermometry with temporal resolutions down to 15 ns.

42 ENGINEERING↗
DOE OSTI2022

Surface reaction for efficient and stable inverted perovskite solar cells

We report perovskite solar cells (PSCs) with an inverted structure (often referred to as the p-i-n architecture) are attractive for future commercialization due to their easily scalable fabrication, reliable operation, and compatibility with a wide range of perovskite-based tandem device architectures. However, the power conversion efficiency (PCE) of p-i-n PSCs falls behind n-i-p (or normal) structure counterparts. This large performance gap could undermine efforts to adopt p-i-n architectures, despite their other advantages. Given the remarkable advances in perovskite bulk materials optimization over the past decade, interface engineering has become the most important strategy to push PSC performance to its limit. Here, we report a reactive surface engineering approach based on a simple post-growth treatment of 3-(Aminomethyl)pyridine (3-APy) on top of a perovskite thin film. First, the 3-APy molecule selectively reacts with surface FA+, reducing perovskite surface roughness and surface potential fluctuations associated with surface steps/terraces. Second, the reaction product on the perovskite surface decreases the formation energy of charged iodine-vacancies, leading to effective n-type doping with a reduced work function in the surface region. With this reactive surface engineering, the resulting p-i-n PSCs obtained a PCE over 25%, along with retaining 87% of the initial PCE after over 2400 h of one-sun operation at about 55 degrees C in air.

14 SOLAR ENERGY↗
DOE OSTI2021

Efficiency Optimization of Dual Active Bridge Converter Based on dV/dt Snubber Capacitors

This paper presents a lossless regenerative dV/dt snubber circuit for PWM converters to achieve high-efficiency high power-density without significant cost and reliability penalties. The dV/dt snubber employs lossless capacitors for each MOSFET device in a converter to provide an additional path to store the switching energy during turn-off transient and decrease the actual turn-off loss of the MOSFET channel. A novel mathematical turn-off loss model is built to separate the actual turn-off loss of the MOSFET channel and the recycling switching energy stored in the total equivalent output capacitance including Coss, the dV/dt snubber, and etc. Necessary snubber optimization strategy is proposed in order to balance the turn-off loss with ZVS operation range and deadtime conduction loss, and thereby achieving an optimal efficiency performance. To prove the validity and accuracy of the novel turn-off loss model and optimization strategy, the dV/dt snubber has been incorporated into a 1.3kV/200kW DC/DC and a 1kV/70kVA DC/AC PWM converters. Experimental results are given to demonstrate the validity of the proposed dV/dt snubber capacitors and optimization strategy.

Xu, Wei↗
DOE OSTI2024

Thermomechanical Degradation of Sintered Copper Under High-Temperature Thermal Shock

The need for reliable bonded interface materials is critical to realize the performance benefits of wide-bandgap devices in power electronics modules, especially in operating temperatures greater than 150 degrees C. In this paper, we investigate the thermomechanical performance of sintered copper (Cu) as a large-area attachment, bonded between Cu baseplates and active-metal-bonded substrates, under accelerated thermal shock (-40 degrees C to 200 degrees C) conditions. In the fabrication phase of the samples, we used different stencil patterns and found that the grid and stripe patterns resulted in a better outgassing of the residual organics during the sintering process, thereby ensuring a substantially improved bond quality compared to a full-area print. The paste consisted of Cu microflakes, and we performed sintering using a Budatec SP300 sintering press at 275 degrees C with 15 MPa of bonding pressure for 5 minutes in a nitrogen atmosphere. Under accelerated experiments, we monitored the degradation of the sintered Cu bond in the samples through C-mode scanning acoustic microscope (C-SAM) images. To quantify the defect percentage in C-SAM images, we investigated image denoising techniques to exclude the pattern prints. Finally, we cross-sectioned a sample and obtained scanning electron microscope images, which revealed adhesive fracture as the dominant failure mechanism.

ADVANCED PROPULSION SYSTEMS,INORGANIC, ORGANIC, PH↗
NASA NTRS1977

Active spacecraft potential control system selection for the Jupiter orbiter with probe mission

It is shown that the high flux of energetic plasma electrons and the reduced photoemission rate in the Jovian environment can result in the spacecraft developing a large negative potential. The effects of the electric fields produced by this charging phenomenon are discussed in terms of spacecraft integrity as well as charged particle and fields measurements. The primary area of concern is shown to be the interaction of the electric fields with the measuring devices on the spacecraft. The need for controlling the potential of the spacecraft is identified, and a system capable of active control of the spacecraft potential in the Jupiter environment is proposed. The desirability of using this system to vary the spacecraft potential relative to the ambient plasma potential is also discussed. Various charged particle release devices are identified as potential candidates for use with the spacecraft potential control system. These devices are evaluated and compared on the basis of system mass, power consumption, and system complexity and reliability.

Beattie, J. R.↗
DOE OSTI2024

Guest Editorial Special Section on Advanced Medium-Voltage Power Electronics for Grid Interactive Applications

Medium-voltage power electronics (MVPE) plays essential roles in power grid modernization and links the MV distribution grid with low-voltage consumers and prosumers. Various MVPE devices, such as solid-state transformers or circuit breakers, inverter-based resources, power flow controllers, etc., bring the benefits of voltage conversion and power regulation in small footprint, power quality and efficiency improvements, and enhancements of grid controllability, flexibility, stability, and resilience. The MVPE also makes it possible for sustainable energy systems, such as solar/wind farms and energy storage generating facilities, to directly access to MV grids without multistage conversions. With their intrinsic intelligence and communications, MVPE enables many new smart grid functions and applications, e.g., dc interconnections and electric vehicle charging, which were not envisioned by traditional power grids otherwise. In addition, the integration of physical power processing units with cyber components forms a cyber-physical system, which is essential for long-term sustainability, development, and environmental preservation. Nonetheless, technical challenges on MVPE device reliability, scalable and efficient converter topologies, control stability, large-scale modeling and simulation, to name a few, need to be addressed and advanced to the next level. In conclusion, this Special Section on Advanced MV Power Electronics for Grid Interactive Applications in IEEE Transactions on Power Electronics (TPEL) provides an insight on some of the recent advances in MVPE and emerging challenges and potential solutions.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2025

Thermal and electric multidomain dynamic model for integration of power grid distribution with behind-the-meter devices

As renewable energy sources like solar and wind power become more integrated into the grid, coordinated control of behind-the-meter devices is crucial for enhancing grid flexibility and reliability and for meeting cost targets, with standardized models being developed to support this transition. The increasing flexibility and uncertainty of integrated renewable energy grids, along with interactions between various subsystems, make traditional steady-state modeling insufficient to capture transient and dynamic behaviors. Current models (e.g., composite load and battery equivalent models) focus on thermodynamic or electrical characteristics but overlook critical electromechanical interactions. This limits the ability to share performance information for grid services and hampers fast dynamic simulations. In addition, motor stalling is usually triggered by a fault event and attributed to the characteristics of the mechanical torque of the motor, resulting in absorption of a large amount of reactive power during the stalling period. Further, this significant withdrawal of reactive power will deteriorate the dynamic voltage stability of power grids and cause delayed voltage recovery. Therefore, an in-depth modeling of the thermodynamics or mechanical torque is essential to study the impacts of the realistic torque characteristics of those behind-the-meter devices on power system voltage stability. This study developed a dynamic multidomain model for building HVAC systems, such as air-source heat pumps, to simulate their thermal and electrical responses to grid transients. The model can accurately predict power metrics with a mean absolute percentage error of 10%, by validating against with power system computer-aided design performance data. Case studies demonstrate the model capability of capturing the transient response to sudden voltage changes, rapid load fluctuations, and system shutdowns respectively. During a sudden voltage drop (30% for 0.1s), a fully loaded heat pump’s motor speed dropped, continued declining, and shut down after 3.6s, with severe power oscillations and a torque spike. A partially loaded unit experienced temporary oscillations but stabilized. Under higher building loads, compressor speed increased from 64% to 100%, with power and torque rising before stabilizing. In safety-triggered shutdowns, power decreased after minor fluctuations, and torque briefly spiked before dropping to zero.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2024

Power Electronics Materials and Bonded Interfaces - Reliability and Lifetime

Advanced packaging technologies are currently being designed and developed by the power electronics industry however, the maximum operating temperature is still limited to 175 degrees Celsius for the silicon carbide devices. Bonded materials such as sintered copper and polymeric materials are potential candidates for high temperature operation, but it is critical to characterize and evaluate its reliability under harsh operating conditions. In this project, we discuss the results of the accelerated experiments conducted on sintered copper and polymeric materials. Additionally, a novel framework to develop the lifetime prediction model of bonded interfaces through employing statistical and machine learning models are described. In this task, scanning acoustic microscope images of bonded interfaces obtained under thermal cycling experiments are used as the data.

ENGINEERING↗
NASA NTRS2001

Silicon Carbide Electronic Devices

The status of emerging silicon carbide (SiC) widebandgap semiconductor electronics technology is briefly surveyed. SiC-based electronic devices and circuits are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot function. Projected performance benefits of SiC electronics are briefly illustrated for several applications. However, most of these operational benefits of SiC have yet to be realized in actual systems, primarily owing to the fact that the growth techniques of SiC crystals are relatively immature and device fabrication technologies are not yet sufficiently developed to the degree required for widespread, reliable commercial use. Key crystal growth and device fabrication issues that limit the performance and capability of high-temperature and/or high-power SiC electronics are identified. The electrical and material quality differences between emerging SiC and mature silicon electronics technology are highlighted.

Neudeck, P. G.↗
DOE OSTI2021

Reliable Power Rating of Perovskite PV Modules: Preprint

As the perovskite technology is ramping up into commercialization, reliable and accurate power rating of large-size perovskite modules becomes a prominent aspect for its future deployment in the PV market. It is known that the performance calibration of perovskite PV devices is very challenging due to its complex dynamic response during a conventional current-voltage (IV) measurement. PV researchers have previously proposed several steady-state performance calibration methods to reliably extract PV efficiencies, but mostly focus on small area research-type cells. In this paper, we emphasize the importance of reliable performance calibration on large-size perovskite modules. Extending the NREL Cell and Module Performance (CMP) group’s steady-state performance calibration protocol (i.e., Asymptotic PMAX Scan) for perovskite cells to modules, we justify the necessity of reporting steady-state efficiencies for perovskite cells and discuss the challenges of applying this protocol to modules. We also present our protocol for Maximum Power Point Tracking (MPPT), which is a technique often used for performance calibration of perovskite cells and modules, and show a comparison between MPPT and Asymptotic PMAX. Using MPPT we demonstrate the interplay between metastability and degradation in perovskite modules, and emphasize the necessity to develop preconditioning protocols for stabilizing these devices. Our aim is to promote development of consensus protocols for performance calibration of perovskite modules, and to advance their credible power ratings, which will be beneficial to the growth of perovskite technology in the PV market.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2021

Reliable Power Rating of Perovskite PV Modules

As the perovskite technology is ramping up into commercialization, reliable and accurate power rating of large-size perovskite modules becomes a prominent aspect for its future deployment in the PV market. It is known that the performance calibration of perovskite PV devices is very challenging due to its complex dynamic response during a conventional current-voltage (IV) measurement. PV researchers have previously proposed several steady-state performance calibration methods to reliably extract PV efficiencies, but mostly focus on small area research-type cells. In this paper, we emphasize the importance of reliable performance calibration on large-size perovskite modules. Extending the NREL Cell and Module Performance (CMP) group's steady-state performance calibration protocol (i.e., Asymptotic P MAX Scan) for perovskite cells to modules, we justify the necessity of reporting steady-state efficiencies for perovskite cells and discuss the challenges of applying this protocol to modules. We also present our protocol for Maximum Power Point Tracking (MPPT), which is a technique often used for performance calibration of perovskite cells and modules, and show a comparison between MPPT and Asymptotic P MAX . Using MPPT we demonstrate the interplay between metastability and degradation in perovskite modules, and emphasize the necessity to develop preconditioning protocols for stabilizing these devices. Our aim is to promote development of consensus protocols for performance calibration of perovskite modules, and to advance their credible power ratings, which will be beneficial to the growth of perovskite technology in the PV market.

perovskite↗
NASA NTRSDate not supplied

Assessment of Cryogenic Analog Electronics for Lunar Environment

Assessment of Analog Electronics for Lunar Power Hibernation Non-nuclear robotic spacecraft on the Moon may not reliably operate past the first lunar day due to the subsequent long lunar night with an extreme low temperature range of 50K-100K. To address this concern, the NASA Glenn Research Center is developing a lunar power hibernation protocol that could enable spacecraft to passively survive the lunar night without any additional heating source and then reactivate at lunar dawn. Low cost lunar robotic missions could extend their mission lifetime from a single lunar cycle to potentially many months, thus greatly extending science data gathering and return on investment for commercial missions. This approach centers on evidence that lithium-ion battery cells can recover to full operation after being subjected to cryogenic temperatures. Exploiting this battery capability requires that all spacecraft electronics, including power system and avionics, passively tolerate the extreme cold without degradation. Key elements in the power system will also need to be capable of actively operating in the extreme cold to perform the functions required to restore the system to full operation after solar power returns at lunar dawn. This presentation provides an assessment of extreme-cold tolerance and operational capability of analog electronics where choices in semiconductor material, device type, and circuit fabrication technology has a dramatic impact on circuit behavior and reliability at low temperatures.

Lunar↗
DOE OSTI2023

Exploring the Limits of Cooling for Extreme Heat Flux Applications: Data Centers and Power Electronic

We developed an Extreme Heat Flux Micro-cooler (EHFµ-C) capable of removing heat flux of ~1 kW/cm 2 with a small temperature rise ~10°C. This represents greater than 10× reduction in thermal resistance compared to the state-of-the-art single-phase cooling technologies (~0.5 cm 2 -°C/W) that greatly increases the efficiency, resulting in improved performance and reliability for microprocessors and power electronics. The EHFµ-Cooler utilizes liquid wicking (no pump) and thin-film evaporation in a 30 µm thick wick porous microstructure such as copper inverse opal (CIO), silicon and AlN pin fins along with a 3D manifold (copper wiremesh and silicon) with liquid routing and vapor extraction channels achieving an unprecedented vapor quality ~ >0.9. The proposed EHFµ-Cooler significantly reduces device temperature, resulting in 25-50% improvement in reliability and device performance. Based on very conservative estimates, the total energy saving for data centers due to improved performance can be 6 billion kWh/year (>$300M). Better cooling, leading to more efficient, higher performance and more reliable power electronics, would save the nation 3 Quad of primary energy in 2030. Just for automotive application, a 10% increase in fuel efficiency for SiC-based power electronics equates to >20 million gallons of fuel savings annually. The proposed EHFµ-Cooler technology ensures the United States maintains its technological lead in high-performance computing and high-power electronics, while at the same time improving the energy efficiency, and as a result reducing energy-related emissions such as greenhouse gases.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗