SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Quantasyn provides absolute measurement of radiation flux in the range 1000 A to 4500 A and into the vacuum ultraviolet. This radiation detector cimbines the high quantum efficiency and inherent linearity of the silicon solar cell with the constant quantum response of the fluorescent organic compound liumogen.
A molding study of compounds based on copolymers of highly fluorinated olefins and of flame retardant silicone is reported. Both single cavity and four cavity molds having size 22 and 24 holes with three webs in each hole were used. Also covered are dielectric strength, arc resistance, Bashore rebound, and maintenance aging tests on the various materials that have been successfully molded.
Boron-arsenic and boron-phosphorus films have been grown on Si sapphire and silicon-on-sapphire (SOS) by pyrolyzing Group 3 alkyls of boron, i.e., trimethylborane (TMB) and triethylborane (TEB), in the presence of AsH3 and PH3, respectively, in an H2 atmosphere. No evidence for reaction between the alkyls and the hydrides on mixing at room temperature was found. However, the films were predominantly amorphous. The film growth rate was found to depend on the concentration of alkyl boron compound and was essentially constant when TEB and AsH3 were pyrolyzed over the temperature range 550 C to 900 C. The films were found to contain mainly carbon impurities (the amount varying with growth temperature), some oxygen, and were highly stressed and bowed on Si substrates, with some crazing evident in thin (2 micron) B-P and thick (5 micron) B-As films. The carbon level was generally higher in films grown using TEB as the boron source. Films grown from PH3 and TMB showed a higher carbon content than those grown from AsH3 and TMB. Based on their B/As and B/P ratios, films with nominal compositions B sub12-16 As2 and B sub1.1-1.3 P were grown using TMB as the boron source.
The method concerns forming a relatively stable slip of silicon metal particles and yttrium containing particles. In one embodiment, a casting slip of silicon metal particles is formed in water. Particles of a yttrium containing sintering aid are added to the casting slip. The yttrium containing sintering aid is a compound which has at least some solubility in water to form Y.sup.+3 ions which have a high potential for totally flocculating the silicon metal particles into a semiporous solid. A small amount of a fluoride salt is added to the casting slip which contains the yttrium containing sintering aid. The fluoride salt is one which will produce fluoride anions when dissolved in water. The small amount of the fluoride anions produced are effective to suppress the flocculation of the silicon metal particles by the Y.sup.+3 ions so that all particles remain in suspension in the casting slip and the casting slip has both an increased shelf life and can be used to cast articles having a relatively thick cross-section. The pH of the casting slip is maintained in a range from 7.5 to 9. Preferably, the fluoride salt used is one which is based on a monovalent cation such as sodium or ammonia. The steps of adding the yttrium containing sintering aid and the fluoride salt may be interchanged if desired, and the salt may be added to a solution containing the sintering aid prior to addition of the silicon metal particles.
The concept of grain-boundary-engineering through elimination of the grain-boundary silicate phase in silicon nitride was developed. The process involved removal of the silica from the nitride powder via a thermal treatment coupled with the use of nitride additives to compensate the remaining oxygen. Magnesium and aluminum nitrides are found to be the most effective additive for use as oxygen compensators. Strength decreases at elevated temperatures are not observed in the alumina containing material. The creep rate of a dual additive sialon composition was two orders of magnitude lower at 1400 C than commercial silicon nitride. A cursory analysis of the creep mechanism indicate that grain-boundary sliding is avoided through elimination of the grain-boundary silicate phase.
The rapid thermal annealing (RTA) of indium phosphide (InP) substrates using a proximity contact method and silicon nitride encapsulation is investigated. The surface conditions of the InP substrates following cleaning with procedures A and B are analyzed. Procedure A involves using an iodic acid solution to remove work-damage InP surface layers and B is a degasssing process and hydrofluoric acid solution for native oxide removal. AES, XPS, and SIMS data of the proximity contact and silicon nitride encapsulated annealed samples are examined. The data reveal that RTA using proximity contact with silicon wafers does not provide adequate protection; however, the InP sample is successfully annealed when protected by a silicon nitride encapsulant.
An electric quarter ton truck designed for use as a postal delivery vehicle was tested to characterize the state of the art of electric vehicles. Vehicle performance test results are presented. It is powered by a single-module, 54 volt industrial battery through a silicon controlled rectifier continuously adjustable controller with regenerative braking applied to a direct current compound wound motor.
The effect of viscosity on normal mode oscillations of a compound drop is determined for a range of values of the viscosity, and the effect of a host medium is considered. The general form of the dispersion relation is derived, and numerical values are obtained for the case of an annular liquid region composed of silicon oil and with the core and host regions taken to be air. Results indicate that the sloshing mode of the compound drop is more damped than the bubble mode.
The use of a compound parabolic concentrator as field collector, in conjunction with a primary focusing concentrator for photovoltaic applications is studied. The primary focusing concentrator can be a parabolic reflector, an array of Fresnel mirrors, a Fresnel lens or some other lens. Silicon solar cell grid structures are proposed that increase efficiency with concentration up to 10 suns. A ray tracing program has been developed to determine energy distribution at the exit of a compound parabolic concentrator. Projected total cost of a CPC/solar cell system will be between 4 and 5 times lower than for flat plate silicon cell arrays.
The concentrations of aluminum, manganese, sodium, chromium, iron, cobalt, and 12 rare earth elements were determined by neutron activation analysis using slow neutrons. Oxygen and silicon were determined using a fast neutron generator. Mossbauer spectroscopy was used to investigate iron compounds in Luna 16 regolith samples from the upper part of the core.
The compound GaAs is of interest for space application photovoltaics due to its inherent advantages over silicon. Higher efficiencies, superior radiation hardness, and a greater temperature resistance are the major advantages of GaAs over Si. Air Force programs look for ways of maximizing these advantages while minimizing disadvantages such as higher costs and weights. Four programs in GaAs photovoltaics are described and each program is discussed in terms of its objective, approach and status.
Compound semiconductor crystals, such as gallium arsenide and indium phosphide crystals, have many interesting properties that silicon crystals lack, and they are expected to be used as materials for optic and/or electro-optic integrated devices. Generally speaking, alloy semiconductors, which consist of more than three elements, demonstrate new functions. For example, values of important parameters, such as lattice constant and emission wavelength, can be chosen independently. However, as it is easy for macroscopic and/or microscopic fluctuations of composition to occur in alloy semiconductor crystals, it is difficult to obtain crystals having homogeneous properties. Macroscopic change of composition in a crystal is caused by the segregation phenomenon. This phenomenon is due to a continuous change in the concentration of constituent elements at the solid-liquid interfacing during solidification. On Earth, attempts were made to obtain a crystal with homogeneous composition by maintaining a constant melt composition near the solid-liquid interface, through suppression of the convection flow of the melt by applying a magnetic field. However, the attempt was not completely successful. Convective flow does not occur in microgravity because the gravity in space is from four to six orders of magnitude less than that on Earth. In such a case, mass transfer in the melt is dominated by the diffusion phenomenon. So, if crystal growth is carried out at a rate that is higher than the rate of mass transfer due to this phenomenon, it is expected that crystals having a homogeneous composition will be obtained. In addition, it is also possible that microscopic composition fluctuations (striation) may disappear because microscopic fluctuations diminish in the absence of convection. We are going to grow a bulk-indium gallium arsenide (InGaAs) crystal using the gradient heating furnace (GHF) in the first material processing test (FMPT). The structure of the sample is shown where InGaAs polycrystals in a crucible are doubly sealed in two quartz tubes for safety. The GHF consists of two zones, namely, high temperature and low temperature zones, which results in a large temperature gradient at the interface. Crystal growth is performed by moving the furnace (i.e. the temperature profile) from the left to right at a definite rate. Thus, we will grow crystals both on Earth and in space under the same conditions. As previously described, it is possible to obtain good quality crystals which are homogeneous in composition both macroscopically and microscopically due to the lack of convection in space. We are planning to study the effects of convection on crystal growth from a melt by comparing and characterizing the properties of crystals grown on Earth with those grown in space.
Desert varnish is a black or reddish coating commonly found on rock samples from arid regions. Typically, the coating is very thin, less than half a millimeter thick. Previous research has shown that the primary components of desert varnish are silicon oxide clay minerals (~60%), manganese and iron oxides (~20-30%), and trace amounts of other compounds [1]. Desert varnish is thought to originate when windborne particles containing iron and manganese oxides are deposited onto rock surfaces where manganese oxidizing bacteria concentrate the manganese and form the varnish [4,5]. If desert varnish is indeed biogenic, then the presence of desert varnish on rock surfaces could serve as a biomarker, indicating the presence of microorganisms. This idea has considerable appeal, especially for Martian exploration [6]. Magnetic analysis techniques have not been extensively applied to desert varnish. The only previous magnetic study reported that based on room temperature demagnetization experiments, there were noticeable differences in magnetic properties between a sample of desert varnish and the substrate sandstone [7]. Based upon the results of the demagnetization experiments, the authors concluded that the primary magnetic component of desert varnish was either magnetite (Fe3O4) or maghemite ( Fe2O3).
A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphate. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at %. The carbon and oxygen impurities were in the 5 to 8 at % range. Boron-nitrogen and boron-boron bonds were revealed by X-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on III-V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.
A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphate. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at. percent. The carbon and oxygen impurities were in the 5 to 8 at. percent range. Boron-nitrogen and boron-boron bonds were revealed by X-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on III-V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.
The temperature control of spacecraft and instrument systems and subsystems requires heat transfer interface materials that possess good thermal and structural characteristics, among other properties, to respond to the vacuum environment of space. These materials must be easy to apply to, and remove from, the surfaces where they are applied, and must be able to withstand power dissipation extremes, and be used for different clamping configurations and pressures. Silicone based greases, used in the past, tend to migrate and to contaminate nearby surfaces. Bare metal to metal contact offers low thermal conductance and difficulties in estimating the actual heat transfer. Several polymeric materials containing different thermal conductive compounds and structural reinforcements were prepared to overcome grease and metal problems. Two polymeric materials were evaluated: Cho-Therm 1671 elastomer; and the CV-2946, a conductive RTV silicone. Tests were done to learn more about these products. Results indicate that the tightly bolted, torqued fixtures did not buckle or distort, and provided optimum thermal conductance. Fixtures simulating actual spacecraft configuration suffered bowing and separating.
The requirements which would result in identifying the components of an automatic analytical system for the analysis of specific organic compounds in the space station potable water supply are defined. The gas chromatographic system for such an analysis is limited to commercially available off-the-shelf hardware and includes the sample inlet, an ionization detector, capillary columns as well as computerized compound identification. The sampling system will be a special variation of the purge and trap Tenax mode using six-port valves and a 500 microliter water sample. Capillary columns used for the separating of contaminants will be bonded phase fused silica with a silicone stationary phase. Two detectors can be used: photoionization and far ultraviolet, since they are sensitive and compatible with capillary columns. A computer system evaluation and program with the principle of compound identification based on the retention index is presented.
Polymer materials samples mounted on a passive carrier tray were flown aboard the STS-46 Atlantis shuttle as complement to the EOIM-3 (Evaluation of Oxygen Interaction with Materials) experiment to evaluate the effects of atomic oxygen on the materials and to measure the gaseous shuttle bay environment. The morphological changes of the samples produced by the atomic oxygen fluence of 2.07 x 10(exp 20) atoms/cm(exp 2) are being reported. The changes have been verified using Electron Spectroscopy for Chemical Analysis (ESCA), gravimetric measurement, microscopic observations and thermo-optical measurements. The samples, including Kapton, Delrin, epoxies, Beta Cloth, Chemglaze Z306, silver Teflon, silicone coatings, 3M tape and Uralane and Ultem, PEEK, Victrex (PES), Polyethersulfone and Polymethylpentene thermoplastic, have been characterized by their oxygen reaction efficiency on the basis of their erosion losses and the oxygen fluence. Those efficiencies have been compared to results from other experiments, when available. The efficiencies of the samples are all in the range of E-24 g/atom. The results indicate that the reaction efficiencies of the reported materials can be grouped in about three ranges of values. The least affected materials which have efficiencies varying from 1 to 10(exp 25) g/atom, include silicones, epoxies, Uralane and Teflon. A second group with efficiency from 10 to 45(exp 25) g/atom includes additional silicone coatings, the Chemglaze Z306 paint and Kapton. The third range from 50 to 75(exp 25) includes organic compound such as Pentene, Peek, Ultem, Sulfone and a 3M tape. A Delrin sample had the highest reaction efficiency of 179(exp 25) g/atom. Two samples, the aluminum Beta cloth X389-7 and the epoxy fiberglass G-11 nonflame retardant, showed a slight mass increase.