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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10

Long-range current-induced spin accumulation in chiral crystals

Abstract Chiral materials, similarly to human hands, have distinguishable right-handed and left-handed enantiomers which may behave differently in response to external stimuli. Here, we use for the first time an approach based on the density functional theory (DFT)+PAOFLOW calculations to quantitatively estimate the so-called collinear Rashba–Edelstein effect (REE) that generates spin accumulation parallel to charge current and can manifest as chirality-dependent charge-to-spin conversion in chiral crystals. Importantly, we reveal that the spin accumulation induced in the bulk by an electric current is intrinsically protected by the quasi-persistent spin helix arising from the crystal symmetries present in chiral systems with the Weyl spin–orbit coupling. In contrast to conventional REE, spin transport can be preserved over large distances, in agreement with the recent observations for some chiral materials. This allows, for example, the generation of spin currents from spin accumulation, opening novel routes for the design of solid-state spintronics devices.

Roy, Arunesh↗

Multilayered YSZ/GZO films with greatly enhanced ionic conduction for low temperature solid oxide fuel cells

Strain confinement in heterostructured films significantly affects ionic conductivity of the electrolytes for solid oxide fuel cells based on a multi-layered design strategy. Nearly ideal tensile strain can be achieved by a dedicated manipulation of the lattice mismatch between adjacent layers and fine control of the layer thicknesses to minimize the formation of dislocations and thus to achieve optimized ionic conduction. This strategy was demonstrated by a model system of multilayered 8 mol%Y 2 O 3 stabilized ZrO 2 (YSZ) with Gd 2 Zr 2 O7 (GZO) films, which were epitaxially grown on Al 2 O 3 (0001) substrates by pulsed laser deposition (PLD) with the {111} planes of YSZ/GZO along the Al 2 O 3 [0 1 -1 0] direction. The tensile strain (3%) resulting from the lattice mismatch can be confined in individual YSZ layers with the formation of a coherent, dislocation-free interface upon the manipulation of the layer thickness below a critical value, e.g., down to 5 nm. The strained heterostructure displays a two order-of-magnitude increase in oxide-ion conductivity as compared with bulk YSZ, and a high ionic conductivity of 0.01 S cm -1 at 475 °C can be achieved, five times greater than that of Gd-doped ceria/zirconia. The approach of strain confinement by fine control of lattice mismatch and layer thickness represents a promising strategy in developing advanced electrolytes enabling the miniaturization of solid-state ionic devices that can be operated at low temperatures below 500 °C.

25 ENERGY STORAGE↗

Crystallization kinetics of the phase change material GeSb 6 Te measured with dynamic transmission electron microscopy

GeSb 6 Te is a chalcogenide-based phase change material that has shown great ptoential for use in solid-state memory devices. The crystallization kinetics of amorphous thin films of GeSb 6 Te during laser crystallization were followed with dynamic transmission electron microscopy, a photo-emission electron microscopy technique with nanosecond-scale time resolution. Nine-frame movies of crystal growth were taken during laser crystallization. The nucleation rate is observed to be very low and the growth rates are very high, up to 10.8 m s –1 for amorphous as-deposited films and significantly higher for an amorphous film subject to sub-threshold laser annealing before crystallization. The measured growth rates exceed any directly measured growth rate of a phase change material. Here, the crystallization is reminiscent of explosive crystallization of elemental semiconductors both in the magnitude of the growth rate and in the resulting crystalline microstructures.

36 MATERIALS SCIENCE↗

I-V characteristics of in-plane and out-of-plane strained edge-hydrogenated armchair graphene nanoribbons

The effects of tensile strain on the current-voltage (I-V) characteristics of hydrogenated-edge armchair graphene nanoribbons are investigated by using DFT theory. The strain is introduced in two different ways related to the two types of systems studied in this work: in-plane strained systems (A) and out-of-plane strained systems due to bending (B). These two kinds of strain lead to make a distinction among three cases: in-plane strained systems with strained electrodes (A1) and with unstrained electrodes (A2), and out-of-plane homogeneously strained systems with unstrained, fixed electrodes (B). The systematic simulations to calculate the electronic transmission between two electrodes were focused on systems of 8 and 11 dimers in width. The results show that the differences between cases A2 and B are negligible, even though the strain mechanisms are different: in the plane case, the strain is uniaxial along its length; while in the bent case, the strain is caused by the arc deformation. Based on the study, a new type of nanoelectromechanical system solid state switching device is proposed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Reproducible and controllable induction voltage adder for scaled beam experiments

A reproducible and controllable induction adder was developed using solid-state switching devices and Finemet cores for scaled beam compression experiments. A gate controlled MOSFET circuit was developed for the controllable voltage driver. The MOSFET circuit drove the induction adder at low magnetization levels of the cores which enabled us to form reproducible modulation voltages with jitter less than 0.3 ns. Preliminary beam compression experiments indicated that the induction adder can improve the reproducibility of modulation voltages and advance the beam physics experiments.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Ab initio electron dynamics in high electric fields: Accurate prediction of velocity-field curves

Electron dynamics in external electric fields governs the behavior of solid-state electronic devices. First-principles calculations enable precise predictions of charge transport in low electric fields. However, studies of high-field electron dynamics remain elusive due to a lack of accurate and broadly applicable methods. In this work, we develop an efficient approach to solve the real-time Boltzmann transport equation with both the electric field term and ab initio electron-phonon collisions. These simulations provide field-dependent electronic distributions in the time domain, allowing us to investigate both transient and steady-state transport in electric fields ranging from low to high (> 10 kV/cm). The broad capabilities of our approach are shown by computing nonequilibrium electron occupations and velocity-field curves in Si, GaAs, and graphene, obtaining results in quantitative agreement with experiment. Our approach sheds light on microscopic details of transport in high electric fields, including the dominant scattering mechanisms and valley occupation dynamics. Our results demonstrate quantitatively accurate calculations of electron dynamics in low to high electric fields, with broad application to power and micro-electronics, optoelectronics, and sensing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Anisotropic Ta{sub 2}O{sub 5} waveguide etching using inductively coupled plasma etching

Smooth and vertical sidewall profiles are required to create low loss rib and ridge waveguides for integrated optical device and solid state laser applications. In this work, inductively coupled plasma (ICP) etching processes are developed to produce high quality low loss tantalum pentoxide (Ta{sub 2}O{sub 5}) waveguides. A mixture of C{sub 4}F{sub 8} and O{sub 2} gas are used in combination with chromium (Cr) hard mask for this purpose. In this paper, the authors make a detailed investigation of the etch process parameter window. Effects of process parameters such as ICP power, platen power, gas flow, and chamber pressure on etch rate and sidewall slope angle are investigated. Chamber pressure is found to be a particularly important factor, which can be used to tune the sidewall slope angle and so prevent undercut.

36 MATERIALS SCIENCE↗

Electrochemical and Chemical Insertion for Energy Transformation and Switching

Insertion is a widely utilized process for reversibly changing the stoichiometry of a solid through a chemical or electrochemical stimulus. Insertion is instrumental to many energy technologies, including batteries, fuel cells, and hydrogen storage, and has been the subject of extensive investigations. More recently, solid-state switching devices utilizing insertion have drawn significant interest; such devices dynamically switch a material's chemical stoichiometry, changing it from one state to another. This paper illustrates the fundamental properties and mechanisms of insertion, including reaction, diffusion, and phase transformation, and discusses recent developments in characterization in these fields. Finally, we also review new classes of recently demonstrated insertion devices, which reversibly switch mechanical and electronic properties, and show how the fundamental mechanisms of insertion can be used to design improved switching devices.

25 ENERGY STORAGE↗

Charge Transfer and Support Effects in Heterogeneous Catalysis

The kinetic, electronic and spectroscopic properties of two-dimensional oxide-supported catalysts were investigated in order to understand the role of charge transfer in catalysis. Pt/TiO 2 nanodiodes were fabricated and used as catalysts for hydrogen oxidation. During the reaction, the current through the diode, as well as its I-V curve, were monitored, while gas chromatography was used to measure the reaction rate. The current and the turnover rate were found to have the same temperature dependence, indicating that hydrogen oxidation leads to the non-adiabatic excitation of electrons in Pt. A fraction of these electrons have enough energy to ballistically transport through Pt and overcome the Schottky barrier at the interface with TiO 2 . The yield for this phenomenon is on the order of 10 -4 electrons per product molecule formed, similar to what has been observed for CO oxidation and for the adsorption of many different molecules. The same Pt/TiO 2 system was used to compare currents in hydrogen oxidation and deuterium oxidation. The current through the diode under deuterium oxidation was found to be greater than under hydrogen oxidation by a factor of three. Weighted by the difference in turnover frequencies for the two isotopes, this would imply a chemicurrent yield 5 times greater for D 2 compared to H 2 , contrary to what is expected given the higher mass of D 2 . Reversible changes in the rectification factor of the diode are observed when switching between D 2 and H 2 . These changes are a likely cause for the differences in current between the two isotopes. In the nanodiode experiments, surface chemistry leads to charge flow, suggesting the possibility of creating charge flow to tune surface chemistry. This was done first by exposing a Pt/Si diode to visible light while using it as a catalyst for H 2 oxidation. Absorption of the light in the Si, combined with the band bending at the interface, gives rise to a steady-state flow of hot holes to the surface. This leads to a decrease in turnover on the surface, an effect which is enhanced when a reverse bias is applied to the diode. Similar experiments were carried out for CO oxidation. On Pt/Si diodes, the reaction rate was found to increase when a forward bias was applied. When the diode was exposed to visible light and a reverse bias was applied, the rate was instead decreased. This implies that a flow of negative charges to the surface increases turnover, while positive charges decrease it. Charge flow in an oxide supported metal catalyst can be modified even without designing the catalyst as a solid state electronic device. This was done by doping stoichiometric and nonstoichiometric TiO 2 films with F, and using the resulting oxides as supports for Pt films. In the case of stoichiometric TiO 2 , F was found to act as an n-type dopant, creating a population of filled electronic states just below the conduction band, and dramatically increasing the conductivity of the oxide film. The electrons in those states can transfer to surface O, activating it for reaction with CO, and leading to increased turnover for CO oxidation. This reinforces the hypothesis that CO oxidation is activated by a flow of negative charges to the surface. The same set of catalysts was used for methanol oxidation. The electronic properties of the TiO 2 films again correlated with the turnover rates, but also with selectivity. With stoichiometric TiO 2 as the support, F-doping caused an increase in selectivity toward the formation of partial oxidation products, formaldehyde and methyl formate, versus the total oxidation product, CO 2 . With non-stoichiometric TiO 2 , F-doping had the reverse effect. Ambient Pressure X-Ray Photoelectron Spectroscopy was used to investigate this F-doping effect in reaction conditions. In O 2 alone, and in CO oxidation conditions, the O1s spectrum showed a high binding energy peak that correlated in intensity with the activity of the different films: for stoichiometric films, the peak decreased in intensity with F-doping, while for nonstoichiometric films, the opposite was observed. No such changes were visible in the C1s spectrum, confirming the role of O activation in the reaction. This thesis adds to the body of knowledge on the importance of charge transfer at the metal-oxide interface in shaping the reactivity of heterogeneous catalysts, and provides examples of how this can be the basis for new methods to tune reactivity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Air Brazing: A New Method of Ceramic-Ceramic and Ceramic-Metal Joining

A new method of ceramic-ceramic and ceramic-metal joining has emerged over the past several years. Referred to as air brazing, the technique was originally designed and developed for use in fabricating high-temperature solid-state electrochemical devices such as planar SOFCs and oxygen and hydrogen concentrators. The primary advantage of air brazing is that a predominantly metallic joint can be formed directly in air without need of an inert cover gas or the use of surface reactive fluxes. The resulting bond is hermetic, offers excellent room temperature strength, and is inherently resistant to oxidation at high temperature. The key to developing a successful filler metal composition for air brazing is to identify a metal oxide wetting agent that is mutually soluble in a molten noble metal solvent. One particular oxide-metal combination that appears readily suited for this purpose is CuOx-Ag, a system originally of interest in the development of silver clad cuprate-based superconductors. Studies of the equilibrium phases studies in this system indicate that there are two invariant points in the pseudobinary CuOx-Ag phase diagram around which new braze compositions can be developed: 1) a monotectic reaction at 969±1°C, where CuO and a Ag-rich liquid L1 coexist with a second CuOx-rich liquid phase L2 at a composition of xAg/(xAg + xCu) = 0.10±0.03 Ag and 2) a eutectic reaction at 942±1°C, where CuO and Ag coexist with L1 at a composition of xAg/(xAg + xCu) = 0.99±0.005. Specifically, near-eutectic Ag-CuO filler metal compositions have shown good promise in joining electrochemically active ceramics such as yttria-stabilized zirconia, lanthanum strontium manganite, and barium strontium cobalt ferrite, as well as alumina and magnesia. More recently it has been found that various ternary additions can further improve the wetting characteristics of these filler metals, increase their potential operating temperatures, and/or increase the resulting strength of the joint strength. Here we review the basic concept of air brazing and illustrate filler metal selection and design using the Ag-CuO system as an example.

air brazing↗

Improving Block-level Efficiency with scsi-mq

Current generation solid-state storage devices are exposing a new bottlenecks in the SCSI and block layers of the Linux kernel, where IO throughput is limited by lock contention, inefficient interrupt handling, and poor memory locality. To address these limitations, the Linux kernel block layer underwent a major rewrite with the blk-mq project to move from a single request queue to a multi-queue model. The Linux SCSI subsystem rework to make use of this new model, known as scsi-mq, has been merged into the Linux kernel and work is underway for dm-multipath support in the upcoming Linux 4.0 kernel. These pieces were necessary to make use of the multi-queue block layer in a Lustre parallel filesystem with high availability requirements. We undertook adding support of the 3.18 kernel to Lustre with scsi-mq and dm-multipath patches to evaluate the potential of these efficiency improvements. In this paper we evaluate the block-level performance of scsi-mq with backing storage hardware representative of a HPC-targerted Lustre filesystem. Our findings show that SCSI write request latency is reduced by as much as 13.6%. Additionally, when profiling the CPU usage of our prototype Lustre filesystem, we found that CPU idle time increased by a factor of 7 with Linux 3.18 and blk-mq as compared to a standard 2.6.32 Linux kernel. Our findings demonstrate increased efficiency of the multi-queue block layer even with disk-based caching storage arrays used in existing parallel filesystems.

Cluster Computing↗

Electrochemical Ammonia Compression

An electrochemical (EC) compressor is a solid-state compression device. For decades, researchers have been studying EC compressors for applications for a variety of energy systems. As the world transitions away from fossil fuel energy sources, EC compression emerges as a promising technique for energy storage, specifically energy stored in the form of pressurized ammonia. Ammonia is also a commonly used refrigerant. The present studies examine the viability of EC compression for ammonia storage and refrigeration. EC ammonia compression increases the concentration of an ammonia-hydrogen mixture via the input of electrical energy and a series of chemical reactions. A polymer electrolyte membrane separates the low-concentration side from the high-concentration side of the device. On the low-pressure (anode) side hydrogen atoms oxidize and react with ammonia molecules, forming positively charge ammonium ions. The ions traverse the membrane electrolytically. The ammonium ions are reduced and revert back to hydrogen and ammonia upon reaching the high-pressure (cathode). An external circuit provides the current needed to sustain the reactions. In this project, we studied the performance of the ammonia EC compressor under a variety of different conditions. We replicated preliminary data and using a small cell with 5 cm2 of active area. We demonstrated the operation of larger cells with 100 cm2 of active area. Further, we used a commercially available hydrogen EC compressor stack to analyze the scaled-up compressor performance. While previous experiments examined only the transient EC compressor performance, we developed test facilities that allowed the compressor to reach steady state. We analyzed the effects of pressure and current on the EC compressor performance. We measured the flow rates of gas leaving the compressors and analyzed the composition using gas chromatography. We tested methods of separating ammonia from the effluent vapor, which contained hydrogen and water vapor. We found that back diffusion adversely affected the performance, especially when we maintained high pressure lifts.

25 ENERGY STORAGE↗

Femtosecond stimulated Raman spectro-microscopy for probing chemical reaction dynamics in solid-state materials

Femtosecond stimulated Raman spectroscopy (FSRS) is a chemically specific vibrational technique that has the ability to follow structural dynamics during photoinduced processes such as charge transfer on the ultrafast timescale. FSRS has a strong background in following structural dynamics and elucidating chemical mechanisms; however, its use with solid-state materials has been limited. As photovoltaic and electronic devices rely on solid-state materials, having the ability to track the evolving dynamics during their charge transfer and transport processes is crucial. Following the structural dynamics in these solid-state materials will lead to the identification of specific chemical structures responsible for various photoinduced charge transfer reactions, leading to a greater understanding of the structure–function relationships needed to improve upon current technologies. Furthermore, isolating the specific nuclear motions and molecular structures that drive a desired physical process will provide a chemical blueprint, leading to the rational design and fabrication of efficient electronic and photovoltaic devices. In this perspective, we discuss technical challenges and experimental developments that have facilitated the use of FSRS with solid-state samples, explore previous studies that have identified structure–function relationships in charge transfer reactions, and analyze the future developments that will broaden and advance the field.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Monolithically-Fabricated Tunable Long-Wave Infrared Detectors Based on Dynamic Graphene Metasurfaces.

In this paper, the design, fabrication, and characterization of an actively tunable long-wave infrared detector, made possible through direct integration of a graphene-enabled metasurface with a conventional type-II superlattice infrared detector, are reported. This structure allows for post-fabrication tuning of the detector spectral response through voltage-induced modification of the carrier density within graphene and, therefore, its plasmonic response. These changes modify the transmittance through the metasurface, which is fabricated monolithically atop the detector, allowing for spectral control of light reaching the detector. Importantly, this structure provides a fabrication-controlled alignment of the metasurface filter to the detector pixel and is entirely solid-state. Using single pixel devices, relative changes in the spectral response exceeding 8% have been realized. These proof-of-concept devices present a path toward solid-state hyperspectral imaging with independent pixel-to-pixel spectral control through a voltage-actuated dynamic response.

47 OTHER INSTRUMENTATION↗

All-organic self-separating three-dimensionally nanoarchitected electrochemical energy storage devices

This work realizes a three-dimensionally (3D) nanoarchitected, all organic, "self-separating" lithium-ion electrochemical energy storage (EES) device that is cycled as a solid-state full cell. The device is enabled by a monolithic carbon anode with a co-continuous pore network, derived from the structure direction of resols by an ultra-large molar mass block copolymer (BCP), poly(styrene-block-2-dimethylaminoethyl methacrylate) (SA). Electropolymerization of a single-phase conductive and redox-active material, poly((2,3-dihydrothieno[3,4-b][1,4]dioxin-2-yl)methyl 9,10-dioxo-9,10-dihydroanthracene-2-carboxylate) (PAQEDOT), into the pore space provides the cathode of the cell. The device is electronically contacted to the relevant electrode network enabled by the co-continuous nature of each electrode. Electrochemical processing via cycling against external lithium in an electrolyte generates a solid electrolyte interphase (SEI) as a separator and lithiates the cell electrodes, after which the EES device is cycled in the solid state. While the full cell does not demonstrate high cyclability, the best full cell demonstrates a discharge capacity of 267 milliamp hours per gram (mAh/g). This work marks, to the best of knowledge of the authors, the first example of an all-organic materials derived 3D nanoarchitected EES device, as well as the first design of "self-separating" cell fabrication. Furthermore, generalization of the design to another co-continuous carbon form factor is demonstrated.

FOS: Physical sciences↗

Improving Charge Transport and Environmental Stability of Carbohydrate-Bearing Semiconducting Polymers in Organic Field-Effect Transistors

Semiconducting polymers offer synthetic tunability, good mechanical properties, and biocompatibility, enabling the development of soft technologies previously inaccessible. Side-chain engineering is a versatile approach for optimizing these semiconducting materials, but minor modifications can significantly impact material properties and device performance. Carbohydrate side chains have been previously introduced to improve the solubility of semiconducting polymers in greener solvents. Despite this achievement, these materials exhibit suboptimal performance and stability in field-effect transistors. In this work, structure–property relationships are explored to enhance the device performance of carbohydrate-bearing semiconducting polymers. Toward this objective, a series of isoindigo-based polymers with carbohydrate side chains of varied carbon-spacer lengths is developed. Material and device characterizations reveal the effects of side chain composition on solid-state packing and device performance. With this new design, charge mobility is improved by up to three orders of magnitude compared to the previous studies. Processing–property relationships are also established by modulating annealing conditions and evaluating device stability upon air exposure. Notably, incidental oxygen-doping effects lead to increased charge mobility after 10 days of exposure to ambient air, correlated with decreased contact resistance. Bias stress stability is also evaluated. This work highlights the importance of understanding structure–property relationships toward the optimization of device performance

36 MATERIALS SCIENCE↗