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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Stacking Faults Originating from Star-Defects in 4H-SiC

Intense efforts are currently in progress to study various sources of basal plane dislocations (BPDs) in SiC epitaxial layers. BPDs can generate Shockley-type stacking faults (SSFs) in SiC epitaxial layers, which have been shown to be associated with the degradation of power devices. This study shows that the star-shaped defect can be a source of several BPDs in the epitaxial layer. We investigate the complex microstructure of the star defect, the generation of BPDs, and expansion of SSFs using various complementary microscopy and optical techniques. We show direct evidence that star-defects can be a nucleation point of single-SSFs that can expand at the core of the defect. Newly found secondary dislocation arrays extending over a few centimeters away are found to be emanating from the primary arms of the star defect. The presence of such dislocation walls and the expansion of single-SSFs will affect the yield of numerous die on a wafer. Further understanding of the formation mechanism of stacking faults generated from star-defects as provided in this study helps understand their effect on SiC-based devices, which is crucial to assess device reliability.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Double-Side Cooled 1.2kV, 300A SiC MOSFET Phase-leg Modules for 200 kW, > 100 kW/L Traction Inverters

The packaging of a double-side cooled 1.2 kV, 149 A SiC phase-leg modules has been reported in recent years for making 100 kW, 100 kW/L traction inverters. Each phase-leg module consists of two SiC MOSFETs, one per switch position. Six of the phase-leg modules are assembled into a segmented inverter configuration to meet the power and power density requirement. In this work, the layout of the phase-leg module was redesigned to include four of the SiC MOSFETs, two per switch position, with the aim of doubling the power to 200 kW and increasing the power density beyond 100 kW/L, but with only a 10.25% footprint increase. Key features of the packaging technology developed in the previous work were implemented in the current work, which include silver sintering for chip bonding and porous silver inter-posts for bonding device source pads to substrate. Parasitic extraction simulation showed that the four-chip module has a low parasitic inductance of 4.7 nH, like the two-chip module. Static characterization of the four-chip prototypes showed a low average on-resistance of 9 mΩ and a low average leakage current of 5 nA at Vds of 1.2 kV.

Zhang, Zichen↗
DOE OSTI2020

Processing and properties of SiC composites made via binder jet 3D printing and infiltration and pyrolysis of preceramic polymer

The effect of polymer infiltration and pyrolysis (PIP) cycles with polycarbosiloxane on the microstructure, air leak rate, and properties of SiC composites manufactured by a combination of binder jet 3D printing and PIP are reported. The density, Young’s modulus and flexural strength of disk-shaped components increased with the number of PIP cycles. In the case of density, it increased from 2.05 g/cm 3 in one PIP cycle to 2.33 g/cm 3 after three PIP cycles, while values of flexural strength and Young’s modulus at room temperature after three PIP cycles reached 66.8 ± 2.5 MPa and 69.5 ± 2.8 GPa, respectively. Conversely, the air leak rate was found to decrease with number of PIP cycles, and it reached a value of 4 mbar-liter/s after three cycles. The instantaneous coefficient of thermal expansion of the composite was found to change minimally with the number of PIP cycles and had a value of 4 ± 1.2 ppm/°C between 200°C and 1,000°C. Thermal conductivity was found to increase with number of PIP cycles and to decrease with temperature. For example, after 3 PIP cycles it was found to change from 6.72 ± 0.08 to 6.98 ± 0.08 W/mK at 25°C and 7.36 ± 0.08 to 7.96 ± 0.08 W/mK at 300°C. These values were lower than those of crystalline SiC because of the amorphous nature of the matrix and the presence of pores and cracks.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Strain-modulated intercalated phases of Pb monolayer with dual periodicity in SiC(0001)-graphene interface

Intercalation of metal atoms at the SiC(0001)-graphene (Gr) interface can provide confined 2D metal layers with interesting electronic properties. The intercalated Pb monolayer (ML) has shown the coexistence of the Gr(10 x 10)-moiré and a stripe phase, which still lacks understanding. Using density functional theory calculation and thermal annealing with ab initio molecular dynamics as motivated by experiment, we have studied the formation energy of Gr/Pb/SiC(0001) for different Pb coverages. Near the coverage of a Pb(111)-like ML mimicking the (10 x 10)-moiré, we find a slightly more stable stripe structure, where one half of the structure has compressive strain with Pb occupying the Si-top sites and the other half has tensile strain with Pb off the Si-top sites. This stripe structure along the Gr zigzag direction has a periodicity of 2.3 nm across the [1$\overline{2}$10] direction agreeing with the previous observations using scanning tunneling microscopy. Analysis with electron density difference and density of states show the tensile region has a more metallic character than the compressive region, while both are dominated by charge transfer from Pb ML to SiC(0001). As a result, the small energy difference between the stripe and Pb(111)-like structures means the two phases are almost degenerate and can coexist, which explains the experimental observations.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Influence of carrier trapping on radiation detection properties in $\mathrm{CVD}$ grown 4H-SiC epitaxial layers with varying thickness up to 250 µm

We report low doped n-type 4H-SiC epitaxial layers of thickness 50, 150, and 250 µm grown by hot wall chemical vapor deposition were used to fabricate Ni/4H-SiC Schottky radiation detectors. The epitaxial layers were grown on the (0001) face of highly conductive bulk 4H-SiC substrates 8° offcut towards the $\langle 11\bar{2}1\rangle$ direction. The 50, 150, and 250 µm thick epilayer detectors, under optimized settings, showed energy resolutions of 2.0%, 0.78%, and 0.63%, respectively for 5.48 MeV alpha particles. Deep level transient spectroscopy studies showed that the observed variation in the detector resolution is linked to the defect parameters in the devices. Least-squares fitting of the bias dependence of the charge collection efficiency according to a drift-diffusion model, revealed minority carrier diffusion lengths of 16, 10, and 9.2 µm, respectively, implying that the detectors are not limited by minority carrier trapping. The detector performance was observed to be primarily dependent on the concentration and capture cross-sections of the lifetime killing electron traps Z 1/2 and EH 6/7 .

36 MATERIALS SCIENCE↗
DOE OSTI2020

The effects of neutron and ionizing irradiation on the aqueous corrosion of SiC

Chemical vapor deposited (CVD) SiC and nuclear-grade SiC/SiC composite materials were exposed to light water reactor (LWR) conditions at the MIT Nuclear Reactor (MITR) here. Three sets of samples were exposed within flowing PWR-chemistry-coolant under either 1) neutron and ionizing irradiation with resulting radiolysis products, 2) radiolysis products without neutron flux, 3) loop coolant. Post-irradiation examination (PIE) exhibited an increase in corrosion from radiolysis products (particularly H 2 O 2 ), and potentially a further increase from radiation damage. For CVD SiC, regardless of exposure location, the in-situ observed corrosion rate was less than 1 µm per year, potentially within acceptable limits for LWR application.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2020

Hydrothermal corrosion behavior of CVD SiC in high temperature water

Here, the hydrothermal corrosion of polished and as-cut high purity chemical vapor deposited (CVD) SiC was studied in a constantly refreshing water loop. Light water reactor (LWR) conditions were simulated at 288, 320, and 350 °C with dissolved gas concentrations between 0.15 and 3 ppm H 2 or between 1 and 4 ppm O 2 . In hydrogenated water, the rate of material loss was low, calculated to be ~1.3 μm of recession after 5 years of service in 320 °C water. Moreover, there was no observed localized attack at any temperature. In oxygenated conditions, the corrosion rate was higher, with a calculated material loss >10 μm after 5 years of service in 1 ppm O 2 , 320 °C water. Mass loss significantly increased when grain fallout became significant (as early as 200h with 4 ppm O 2 at 350 °C or after 1000–2000h with 2 ppm O 2 at 288 °C). Grain fallout more than doubled the corrosion rate and a steady state corrosion rate in the grain fallout regime was not observed but expected to eventually occur once large grains begin to be removed. Polished specimens had lower mass loss than unpolished coupons. A kinetic analysis of the data in this work suggests that the corrosion rates are controlled by a single activation step in both oxygenated and deoxygenated conditions, with the reaction order with respect to oxygen being 1. A resulting reaction rate equation to predict corrosion of SiC (in mg/cm 2 s) in high purity water from 288 to 350 °C and up to 4 ppm O 2 was constructed: Rate = $\frac{0.1458}{1+SA}$ T (1.09(1–10 -3 T)[O 2 ]e– $\frac{1.275x10^4}{T}$ + 7.91x10 -6 e– $\frac{7.39x10^3}{T}$).

36 MATERIALS SCIENCE↗
DOE OSTI2022

Irradiation-induced chemical disordering in ceramics: The case of SiC

Chemical disordering is one feature of damage that occurs in irradiation environments and is common in ceramic compounds. This paper reviews irradiation-induced chemical disordering in SiC-based materials at elevated temperatures. Here the results were obtained using advanced analytical tools to characterize atomistic defects and to evaluate the chemistry of defect clusters and homonuclear bond structures. Finally, this paper demonstrates that chemical disordering is crucial to understanding microstructural stability and establishing a mechanistic modeling of microstructural evolution of irradiated SiC.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Optoelectronic and structural characterization of trapezoidal defects in 4H-SiC epilayers and the effect on MOSFET reliability

To this day, trapezoidal defects are found in clusters and high counts in wafers representing the industry standard in terms of material quality being produced. This study sheds light on the nature, origin, behavior, and impact of this defect on device yield and reliability. Trapezoidal defects in 4H-SiC epitaxial layers were investigated by photoluminescence (PL) imaging, scanning electron microscopy (SEM), cathodoluminescence spectrum imaging (CLSI), SEM electron beam induced current (EBIC) imaging, and by transmission electron microscopy (TEM) observation. The bar-shaped stacking faults were identified by the PL and CL measurements with a peak emission wavelength of 420 and 450 nm. An optoelectronic behavioral study based on the recombination enhanced dislocation glide mechanism revealed how expanding dislocations and stacking faults interact with each other. Combining the luminescence and microscopy results, the nature of the stacking faults was identified as being a combination of Shockley-type and Frank-type stacking faults. The TEM analysis showed that these defects originate from the substrate and the stacking sequences of some of the faults were determined as (…2, 4, 2…) and (…2, 3, 2…) in the Zhdanov's notation by high-resolution TEM. The origin of this defect is speculated based on our results and previous reports. The EBIC imaging showed that the high density of SFs in these towers is a strong site of carrier recombination, which presumably has an impact on the transfer characteristics of SiC devices. Furthermore, these defects have shown to impact metal oxide semiconductor field effect transistors electrical performance via an increase in the on-state resistance depending on the coverage percentage of the tower of defects in the active area of the device.

4H-SiC↗
DOE OSTI2022

Development of a 250 Degree C 15kV Supercascode Switch Using SiC JFET Technology

Tetra Corporation is developing a pulsed power drilling system for the geothermal industry. The system requires a high temperature switching technology to replace the existing technology based on Si thyristors with a temperature limit of 150 degrees C. This work focuses on the development of such switch based on a Supercascode configuration using SiC JFET technology. The development presented contains thermal models, packaging design and processes, circuit simulations and prototypes of both the Supercascode switch and the high temperature packaged SiC JFETs.

cascaded switch↗
DOE OSTI2023

Next-Generation Modular Flexible Low-Cost SiC-based High-Frequency-Link Transformer (Final Technical Report)

This project, led by the small business NextWatt LLC, led to the design and development of a novel high-frequency-link (HFL) transformer that yields reduce number of semiconductor devices compared to conventional solid-state transformers (SSTs). The HFL transformer is based on SiC device technology and nanocrystalline-core-based magnetics techniology. The control actuation of the SiC devices are algorithmically implemented in digital signal processor (DSP) platform. The overall HFL transformer technology is conceived and developed using a modular approach. During the course of the project the novel technology and its experimental performances at the module, multi-phase, and cascaded multi-phase levels have been demonstrated to the sponsor U.S. Department of Energy (DOE).

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2025

High temperature nuclear data measurements of SiC, ZrC, and MgO [Slides]

Performed temperature dependent measurements of SiC and ZrC at ARCS instrument at SNS. Performed temperature dependent measurements of SiC, ZrC, and MgO at VISION instrument at SNS. Performed initial atomistic modeling of these materials using various techniques, including machine learned potentials. Future work includes temperature dependent transmission measurements of these materials, as well as improving the machine learned potentials with more training data and different machine learned frameworks.

ARCS↗
DOE OSTI2026

Efficient Silicon Carbide (SiC) Fiber Manufacture: Continuous Processing of Novel Precursors via Modified Material Handling

General Atomics Electromagnetic Systems (GA-EMS) together with The Nonwovens Institute (NWI) and Harper International have executed on a development project to improve the production efficiency and reduce the production cost of silicon carbide (SiC) fiber – a critical material that advances US energy security and aerospace leadership. In the first budget period (BP1), the modified tow throughput (MTT) apparatus was developed, enabling fiber spinning in the form of loose coils rather than tightly packed spools (Figure 1) for batch processing of SiC fiber. This coil-based approach was proven to be capable of uniform fiber crosslinking and ceramic conversion, as well as demonstrating key process efficiencies while meeting the program fiber property targets.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2021

Monolithic Integration of Lateral HV Power MOSFET with LV CMOS for SiC Power IC Technology

This paper reports the design and process flow for monolithic integration of lateral high voltage (HV) power MOSFET with low voltage (LV) CMOS circuits for SiC Power IC technology. The reported devices and circuits are fabricated on a N-/N+ 4H-SiC substrate at 150mm, production grade- Analog Devices Inc. (ADI) Hillview fabrication facility located in San Jose. Here, the static performance characteristics of HV NMOS and LV CMOS are reported. For future high temperature applications, the static performances are fully characterized and are reported up to 200oC. Finally, to validate the fabricated CMOS, a 5-stage ring oscillator is also demonstrated.

4H-SiC↗
DOE OSTI2021

A Study of Integrated Signal and Power Transfer for Compact Isolated SiC MOSFET Gate-Drivers

This work discusses a novel set of alternate implementations of isolated gate driver circuits for power electronic transistors. The proposed topologies for the driver have been designed specifically for SiC power MOSFET. Three different solutions are discussed, all of them providing the required gate turn-on and turn-off command signal with galvanic isolation, but also supplying power to the secondary side of the driver by means of magnetic transformers. The resulting solutions, all of them implemented with simple circuitry, enable the integration of the driver into the power cell, allowing for theoretical higher power density values in the final system. The principle of operation of the different solutions is discussed, and then the main relevant implementation details are presented. After that, the operation of the circuits is demonstrated experimentally, by testing a set of prototypes of these drivers. This provides a comprehensive design example that assesses the feasibility of the proposed solutions. Finally, the main results of the performance of the three gate drivers, on an SiC MOSFET-based prototype are presented and compared.

42 ENGINEERING↗
DOE OSTI2025

Investigation of the Effect of Gate Oxide Screening with Adjustment Pulse on Commercial SiC Power MOSFETs

This paper presents a method to recover the negative threshold voltage shift during high field gate oxide screening of 1.2 kV 4H-SiC MOSFETs with an additional adjustment gate voltage pulse. To reduce field failure rates of the MOSFETs in operation, manufacturers perform a screening treatment to remove devices with extrinsic defects in the oxide. Current gate oxide screening procedures are limited to oxide fields at or below ~9 MV/cm for short durations (<1 s), which is not enough to remove all the devices with extrinsic defects. The results show that by implementing a lower field gate pulse, the threshold voltage shift can be partially recovered, and therefore the maximum screening field and time can be increased. However, both the initial screening pulse and the adjustment pulse require careful calibration to prevent significant degradation of the device threshold voltage, on-resistance, interface state density, or intrinsic lifetime. With a well calibrated set of pulses, higher screening fields can be utilized without significantly damaging the devices. This leads to an improvement in the overall screening efficiency of the process, reducing the number of devices with extrinsic oxide defects entering the field, and improving the reliability of the SiC MOSFETs in operation.

42 ENGINEERING↗
DOE OSTI2023

Hardness Measurements and Interface Behavior of SiC-B 4 C-Si Multiple Phase Particulate Composites Made with Melt Infiltration and Additive Manufacturing

Reaction-bonded SiC-B 4 C-Si ceramic composites were binder jet 3D-printed and subsequently pressureless-melt-infiltrated with molten Si. The addition of B 4 C aided the Si infiltration to produce a highly dense composite. The microstructures and phases of these composites were examined. The measured hardness values of each constituent with Vickers and nanoindentation matched the bulk values, and the macro-hardness values with Knoop and spherical indentation represented the bulk, composite hardness values of all three phases together, which was close to a rule of mixtures value. For particulate-based composites, this is a significant finding. The interfacial bonds of SiC and Si were imaged using scanning transmission electron microscopy to view intimacy, whereas the crack propagation was examined with carefully placed indents. This work demonstrated that pressureless melt infiltration with a reactive particle provides a method to shape non-wetting reaction-bonded ceramic composites with limited shrinkage and high density and provides insights into the mechanical behavior with numerous indentation techniques.

36 MATERIALS SCIENCE↗
DOE OSTI2020

1.2 kV, 10 A, 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Low On-State Voltage Drop

Bidirectional power switches are used in matrix-or cyclo-converters and in multistage inverter circuits to facilitate high-frequency AC-to-AC conversion. A new 1.2 kV bidirectional MOSFET (BiDFET) with low on-resistance is achieved and demonstrated using two discrete SiC power MOSFET bare die chips, packaged within a four-terminal custom-designed module. Static and dynamic characterization has been carried out to inspect the on-state and switching behaviour of the BiDFET. Here, the BiDFET is shown to have a low forward voltage drop of 0.6 V at a current of 10 A, which is more than 2.5x smaller than previous Si IGBT and SiC MOSFET based bidirectional switch implementations.

36 MATERIALS SCIENCE↗