Low-energy proton damage effects in silicon surface-barrier detectors.
Low energy proton damage effects on silicon surface barrier transmission detectors to predict device lifetime in earth radiation belts conditions
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Low energy proton damage effects on silicon surface barrier transmission detectors to predict device lifetime in earth radiation belts conditions
We have fabricated 63-element linear arrays of micromachined thermopile infrared detectors on silicon substrates. Each detector consists of a suspended silicon nitride membrane with 11 thermocouples of sputtered Bi-Te and Bi-Sb-Te films.
High temperature behavior and long-term stability of lithium drifted silicon surface barrier charged particle detectors
Low energy proton damage effects on useful life of silicon surface barrier detectors operated in geomagnetically trapped radiation belts
Minimum ionizing particles incident on the XRS microcalorimeter array will deposit energy in the pixels on the same scale as an x-ray photon and would be confused with x-rays without an anti-coincidence detector. The XRS anti-coincidence detector is a silicon ionization detector placed directly behind the calorimeter array. Given an isotropic particle flux, 98% of those particles that pass through a calorimeter pixel will also deposit energy in the anti-coincidence detector. Particle events that are not rejected by coincidence are those that pass through at small angles relative to the plane of the array, and thus deposit more energy. Modeling with GEANT4 showed that only 0.1% of all protons incident on the array miss the anti-coincidence detector yet deposit less than 10 keV in a pixel. The unrejected background will thus be dominated by secondary events; we will provide an estimate of this rate. Protons incident on the thick silicon frame around the active area of the array deposit enough energy t o heat the whole chip slightly. This results in small simultaneous pulses on multiple pixels. These can be easily rejected by pixel-to-pixel coincidence. We will discuss the impact of these events on the instrument dead time and will present the expected rate. We will present laboratory background data demonstrating the performance of the anti-coincidence detector and the effectiveness of coincidence analysis in the laboratory environment.
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eXTP is a science mission designed to study the state of matter under extreme conditions of density, gravity and magnetism. Primary goals are the determination of the equation of state of matter at supra-nuclear density, the measurement of QED effects in highly magnetized star, and the study of accretion in the strong-field regime of gravity. Primary targets include isolated and binary neutron stars, strong magnetic field systems like magnetars, and stellar-mass and supermassive black holes. The mission carries a unique and unprecedented suite of state-of-the-art scientific instruments enabling for the first time ever the simultaneous spectral-timing-polarimetry studies of cosmic sources in the energy range from 0.5-30 keV (and beyond). Key elements of the payload are: the Spectroscopic Focusing Array (SFA) - a set of 11 X-ray optics for a total effective area of approx. 0.9 m(exp. 2) and 0.6 m(exp. 2) at 2 keV and 6 keV respectively, equipped with Silicon Drift Detectors offering less than 180 eV spectral resolution; the Large Area Detector (LAD) - a deployable set of 640 Silicon Drift Detectors, for a total effective area of approx. 3.4 m(exp. 2), between 6 and 10 keV, and spectral resolution better than 250 eV; the Polarimetry Focusing Array (PFA) - a set of 2 X-ray telescope, for a total effective area of 250 cm(exp. 2) at 2 keV, equipped with imaging gas pixel photoelectric polarimeters; the Wide Field Monitor (WFM) - a set of 3 coded mask wide field units, equipped with position-sensitive Silicon Drift Detectors, each covering a 90 degrees x 90 degrees field of view. The eXTP international consortium includes major institutions of the Chinese Academy of Sciences and Universities in China, as well as major institutions in several European countries and the United States. The predecessor of eXTP, the XTP mission concept, has been selected and funded as one of the so-called background missions in the Strategic Priority Space Science Program of the Chinese Academy of Sciences since 2011. The strong European participation has significantly enhanced the scientific capabilities of eXTP. The planned launch date of the mission is earlier than 2025.
We have developed a fine-pitch hard X-ray (HXR) detector using a cadmium telluride (CdTe) semiconductor for imaging and spectroscopy for the second launch of the Focusing Optics Solar X-ray Imager (FOXSI). FOXSI is a rocket experiment to perform high sensitivity HXR observations from 4 to 15 keV using the new technique of HXR focusing optics. The focal plane detector requires less than 100 micrometers position resolution (to take advantage of the angular resolution of the optics) and approximately equals 1 keV energy resolution (full width at half maximum (FWHM)) for spectroscopy down to 4 keV, with moderate cooling (greater than -30 C). Double-sided silicon strip detectors were used for the first FOXSI flight in 2012 to meet these criteria. To improve the detectors' efficiency (66% at 15 keV for the silicon detectors) and position resolution of 75 micrometers for the second launch, we fabricated double-sided CdTe strip detectors with a position resolution of 60 micrometers and almost 100% efficiency for the FOXSI energy range. The sensitive area is 7.67 mm x 7.67 mm, corresponding to the field of view of 791'' x 791''. An energy resolution of 1 keV (FWHM) and low-energy threshold of approximately equals 4 keV were achieved in laboratory calibrations. The second launch of FOXSI was performed on 11 December 2014, and images from the Sun were successfully obtained with the CdTe detector. Therefore, we successfully demonstrated the detector concept and the usefulness of this technique for future HXR observations of the Sun.
Observation of nuclear pulse height increases in silicon p-n junction radiation detectors
The silicon substrate carrier was created so that a large-area array (in this case 62,000+ elements of a microshutter array) and a variety of discrete passive and active devices could be mounted on a single board, similar to a printed circuit board. However, the density and number of interconnects far exceeds the capabilities of printed circuit board technology. To overcome this hurdle, a method was developed to fabricate this carrier out of silicon and implement silicon integrated circuit (IC) technology. This method achieves a large number of high-density metal interconnects; a 100-percent yield over a 6-in. (approximately equal to 15-cm) diameter wafer (one unit per wafer); a rigid, thermally compatible structure (all components and operating conditions) to cryogenic temperatures; re-workability and component replaceability, if required; and the ability to precisely cut large-area holes through the substrate. A method that would employ indium bump technology along with wafer-scale integration onto a silicon carrier was also developed. By establishing a silicon-based version of a printed circuit board, the objectives could be met with one solution. The silicon substrate would be 2 mm thick to survive the environmental loads of a launch. More than 2,300 metal traces and over 1,500 individual wire bonds are required. To mate the microshutter array to the silicon substrate, more than 10,000 indium bumps are required. A window was cut in the substrate to allow the light signal to pass through the substrate and reach the microshutter array. The substrate was also the receptacle for multiple unpackaged IC die wire-bonded directly to the substrate (thus conserving space over conventionally packaged die). Unique features of this technology include the implementation of a 2-mmthick silicon wafer to withstand extreme mechanical loads (from a rocket launch); integrated polysilicon resistor heaters directly on the substrate; the precise formation of an open aperture (approximately equal to 3x3cm) without any crack propagation; implementation of IR transmission blocking techniques; and compatibility with indium bump bonding. Although designed for the microshutter arrays for the NIRSpec instrument on the James Webb Space Telescope, these substrates can be linked to microshutter applications in the photomask generation and stepper equipment used to make ICs and microelectromechanical system (MEMS) devices.
Lithium drifted germanium and silicon semiconducting detectors compared with thallium activated sodium iodide crystal scintillation counter for gamma spectrometry
The low-temperature performance of silicon diffused junction detectors in the measurement of low energy X-rays is reported. The detectors have an area of 0.04 sq cm and a thickness of 100 microns. The spectral resolutions of these detectors were found to be in close agreement with expected values, indicating that the defects introduced by the high-temperature processing required in the device fabrication were not deleteriously affecting the detection of low-energy X-rays. Device performance over a temperature range of 77 K to 150 K is given. These detectors were designed to detect low-energy X-rays in the presence of minimum ionizing electrons. The successful application of silicon-diffused junction technology to X-ray detector fabrication may facilitate the development of other novel silicon X-ray detector designs.
Building on the success of the Energetic Gamma Ray Experiment Telescope (EGRET) on the Compton Gamma Ray Observatory, the Gamma Ray Large Area Space Telescope (GLAST) will make a major step in the study of such subjects as blazars, gamma Ray bursts, the search for dark matter, supernova remnants, pulsars, diffuse radiation, and unidentified high energy sources. The instrument will be built on new and mature detector technologies such as silicon strip detectors, low-power low-noise LSI, and a multilevel data acquisition system. GLAST is in the research and development phase, and one full tower (of 25 total) is now being built in collaborating institutes. The prototype tower will be tested thoroughly at Stanford Linear Accelerator Center (SLAC) in the fall of 1999.
Liulin, a dosimetry-radiometry system, was developed to satisfy the requirements for active flux and dose rate measurements for the flight of the second Bulgarian cosmonaut in 1988. The system consists of a compact battery-operated silicon solid state detector unit and a read/write microcomputer and telemetry unit. We describe the pre-flight calibrations with charged particles, using radioactive sources and accelerated 170 MeV/nucleon proton and alpha particles at the Dubna, Russia cyclotron. We discuss comparisons with data obtained on Mir with the French-built tissue equivalent LET spectrometer NAUSICAA. Lastly, we describe post-flight calibrations performed with 1 GeV/nucleon 56Fe ions at the Brookhaven National Laboratory AGS accelerator, where the instrument was mounted in tandem with several thin position-sensitive silicon detectors behind a stopping target. The silicon detectors provided an energy spectrum for the surviving charged nuclear fragments for which the flux and absorbed dose were recorded by Liulin.
Linear arrays with up to 63 micromachined thermopile infrared detectors on silicon substrates have been constructed and tested. Each detector consists of a suspended silicon nitride membrane with 11 thermocouples of sputtered Bi-Te and Bi-Sb-Te thermoelectric elements films. At room temperature and under vacuum these detectors exhibit response times of 99 ms, zero frequency D* values of 1.4 x 10(exp 9) cmHz(exp 1/2)/W and responsivity values of 1100 V/W when viewing a 1000 K blackbody source. The only measured source of noise above 20 mHz is Johnson noise from the detector resistance. These results represent the best performance reported to date for an array of thermopile detectors. The arrays are well suited for uncooled dispersive point spectrometers. In another embodiment, also with Bi-Te and Bi-Sb-Te thermoelectric materials on micromachined silicon nitride membranes, detector arrays have been produced with D* values as high as 2.2 x 10(exp 9) cm Hz(exp 1/2)/W for 83 ms response times.
The effects of field funneling and range straggling have been quantitatively observed in the measurement of charge collected from alpha-particle tracks in silicon surface-barrier charged-particle detectors. The method described may be used for the straight-forward measurement of charge collection from heavy ions in these and other semiconductor devices.
The ATIC balloon-born experiment measures the energy spectra of elements from H to Fe in primary cosmic rays from about 100 GeV to 100 TeV. ATIC is comprised of a fully active bismuth germinate calorimeter, a carbon target with embedded scintillator hodoscopes, and a silicon matrix that is used as a main charge detector. The silicon matrix produces good charge resolution for the protons and helium but only a partial resolution for heavier nuclei. In the present paper a charge resolution of ATIC device was improved and backgrounds were reduced in the region from Be to Si by means of the upper layer of the scintillator hodoscope that was used as charge detector together with silicon matrix. Relative fluxes of nuclei B, C, N, O in the energy region from about 20 GeV/nucleon to 200 GeV/nucleon that were obtained from new high-resolution and high-quality charge spectra of nuclei are presented.
The energy deposition distribution for protons and helium galactic cosmic ray primaries at 0.3, 10, and 25 TeV/nucleon in the ATIC-2 silicon matrix detector are simulated with GEANT4. The GEANT3 geometrical model of ATIC developed by the University of Maryland was combined with a GEANT4 application developed for the Deep Space Test Bed (DSTB) detector package. The new code included relatively minor modifications to completely describe the ATIC materials and a more detailed model of the Silicon Matrix detector. For this analysis all particles were started as a unidirectional beam at a single point near the center of the Silicon Matrix front surface. The point was selected such that each primary passed through at least two of the overlapping silicon pixels.