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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10

Method to Remove Particulate Matter from Dusty Gases at Low Pressures

Future human exploration of Mars will rely on local Martian resources to reduce the mass, cost, and risk of space exploration launched from Earth. NASA's In Situ Resource Utilization (ISRU) Project seeks to produce mission consumables from local Martian resources, such as atmospheric gas. The Martian atmosphere, however, contains dust particles in the 2-to-10 -micrometer range. These dust particles must be removed before the Martian atmospheric gas can be processed. The low pressure of the Martian atmosphere, at 5 to 10 mbars, prevents the development of large voltages required for a standard electrostatic precipitator. If the voltage is increased too much, the corona transitions into a glow/streamer discharge unsuitable for the operation of a precipitator. If the voltage is not large enough, the dust particles are not sufficiently charged and the field is not strong enough to drive the particles to the collector. A method using electrostatic fields has been developed to collect dust from gaseous environments at low pressures, specifically carbon dioxide at pressures around 5 to 10 mbars. This method, commonly known as electrostatic precipitation, is a mature technology in air at one atmosphere. In this case, the high voltages required for the method to work can easily be achieved. However, in carbon dioxide at low pressures, such as those found on Mars, large voltages are not possible. The innovation reported here consists of two concentric cylindrical electrodes set at specific potential difference that generate an electric field that produces a corona capable of imparting an electrostatic charge to the incoming dust particles. The strength of the field is carefully balanced so as to produce a stable charging corona at 5 to 10 mbars, and is also capable of imparting a force to the particles that drives them to the collecting electrode. There are only two possible ways that dust can be removed from Martian atmospheric gas intakes: with this electrostatic precipitator design, and with the use of filters. However, filters require upstream compression of the gas to be treated because the atmospheric pressure on Mars is too close to vacuum to use a vacuum pump downstream to the filter to draw the gas through the filter. The electrostatic precipitator is the best and more efficient solution for this environment. No other precipitator designs have been developed for the environment of Mars due to the challenges of the low atmospheric pressure. Dust particles are charged using corona generation around the high-voltage discharge electrode, which ionizes gas molecules. Since the atmospheric gas intakes for the ISRU processing chambers will likely be cylindrical, cylindrical precipitator geometry was chosen. The electrostatic precipitator design presented here removes simulated Martian dust particles in the required range in a simulated Martian atmospheric environment. The current-voltage (I-V) characteristic curves taken for the nine precipitator configurations at 9 mbars of pressure showed that a cylindrical collecting electrode 7.0 cm in diameter with a concentric positive high voltage electrode 100 m thick provides the best range of voltage and charging corona current. This precipitator design is effective for the size of the dust particles expected in the Martian atmosphere. Mass determination, as well as microscopic images and particle size distributions of dust collected on a silicon wafer placed directly below the precipitator with the field on and off, showed excellent initial results.

Calle, Carlos↗

Reflective Coatings for the Future X-Ray Mirror Substrates

We present the development of the reflective coating by magnetron sputtering deposition onto precisely-fabricated thin X-ray mirrors. Our goal is to remove distortion induced by the coating and then keep their surface pro les. We first addressed the uniform coating to minimize the distortion by introducing a mask to control the spatial distribution of the coating thickness. The uniformity was finally achieved within 1%. We next tried a platinum single-layer coating on a glass substrate with a dimension of 200 mm 125 mm. The distortion caused by the frontside coating with a thickness of 320 A was found to be at most 1 m, smaller than the previous results obtained from the non-uniform coating. We then carried out the platinum coating with the same amount of the thickness on the backside surface of the glass substrate. The surface pro le of the glass substrate was fully recovered, indicating that the residual stress was successfully balanced by the backside coating. Furthermore, we tried to an iridium single-layer coating with a thickness of 150 Aon the silicon mirrors. The frontside coating caused the degradation of the imaging quality by 7:5 arcsec in half-power width. However, the backside coating with the same amount of the thickness reduced this degradation to be 3:4 arcsec. Finally, an additional backside coating with a thickness of 100 A and the annealing to relax the residual stress were found to eliminate the distortion completely; the final degradation of the imaging quality was only 0:4 arcsec.

Mori, Hideyuki↗

Investigation of nucleation and growth processes of diamond films by atomic force microscopy

The nucleation and growth of plasma enhanced chemical vapor deposited (PECVD) polycrystalline diamond films were studied using atomic force microscopy (AFM). AFM images were obtained for: (1) nucleated diamond films produced from depositions that were terminated during the initial stages of growth, (2) the silicon substrate-diamond film interface side of diamond films (1-4 micrometers thick) removed from the original surface of the substrate, and (3) cross-sectional fracture surface of the film, including the Si/diamond interface. Pronounced tip effects were observed for early-stage diamond nucleation attributed to tip convolution in the AFM images. AFM images of the films cross-section and interface however were not affected by tip convolution, and the images indicate that the surface of the silicon substrate is initially covered by small grained polycrystalline-like film and the formation of this precursor film is followed by nucleation of the diamond film on top of this layer. X-ray photoelectron spectroscoy (XPS) spectra indicates that some silicon carbide is present in the precursor layer.

George, M. A.↗

X ray attenuation measurements for high-temperature materials characterization and in-situ monitoring of damage accumulation

The scope of this dissertation is to develop and apply x ray attenuation measurement systems that are capable of: (1) characterizing density variations in high-temperature materials, e.g., monolithic ceramics, ceramic and intermetallic matrix composites, and (2) noninvasively monitoring damage accumulation and failure sequences in ceramic matrix composites under room temperature tensile testing. This dissertation results in the development of: (1) a point scan digital radiography system, and (2) an in-situ x ray material testing system. Radiographic evaluation before, during, and after loading shows the effect of preexisting volume flaws on the fracture behavior of composites. Results show that x ray film radiography can monitor damage accumulation during tensile loading. Matrix cracking, fiber matrix debonding, fiber bridging, and fiber pullout are imaged throughout the tensile loading of the specimens. Further in-situ radiography is found to be a practical technique for estimating interfacial shear strength between the silicon carbide fibers and the reaction bonded silicon nitride matrix. It is concluded that pretest, in-situ, and post test x ray imaging can provide for greater understanding of ceramic matrix composite mechanical behavior.

Baaklini, George Y.↗

Investigation of nucleation and growth processes of diamond films by atomic force microscopy

The nucleation and growth of plasma-enhanced chemical-vapor deposited polycrystalline diamond films were studied using atomic force microscopy (AFM). AFM images were obtained for (1) nucleated diamond films produced from depositions that were terminated during the initial stages of growth, (2) the silicon substrate-diamond film interface side of diamond films (1-4 micrometers thick) removed from the original surface of the substrate, and (3) the cross-sectional fracture surface of the film, including the Si/diamond interface. Pronounced tip effects were observed for early-stage diamond nucleation attributed to tip convolution in the AFM images. AFM images of the film's cross section and interface, however, were not highly affected by tip convolution, and the images indicate that the surface of the silicon substrate is initially covered by a small grained polycrystalline-like film and the formation of this precursor film is followed by nucleation of the diamond film on top of this layer. X-ray photoelectron spectroscopy spectra indicate that some silicon carbide is present in the precursor layer.

George, M. A.↗

Examination of silicon solar cells by means of the Scanning Laser Acoustic Microscope (SLAM)

The Scanning Laser Acoustic Microscope produces images of internal structure in materials. The acoustic microscope is an imaging system based upon acoustic rather than electromagnetic waves. Variations in the elastic propertis are primarily responsible for structure visualized in acoustic micrographs. The instrument used in these investigations is the SONOMICROSCOPE 100 which can be operated at ultrasonic frequencies of from 30 MHz to 500 MHz. The examination of the silicon solar cells was made at 100 MHz. Data are presented in the form of photomicrographs.

Vorres, C.↗

Imaging antenna array at 119 microns

A focal-plane imaging antenna array has been demonstrated at 119 microns. The array is a line of evaporated silver bow-tie antennas with bismuth microbolometer detectors on a silicon substrate. Radiation is coupled into the array by a lens placed on the back of the substrate. The bolometers are thermally isolated from the silicon substrate with a half-micron layer of polyimide. The array performance is demonstrated by coherent imaging of a series of holes at half the diffraction-limited cut-off frequency.

Neikirk, N. P.↗

Infrared surface temperature measurements for the surface tension driven convection experiment

In support of the Surface Tension Driven Convection Experiment (STDCE), a planned space transportation system (STS) flight experiment, a commercially available infrared thermal imaging system is used to quantify the imposed thermal signature along the free surface. The system was tested and calibrated for the STDCE with ground-based equivalents of the STDCE hardware. Before using the system, consideration was given to the radiation characteristics of the target (silicone oil). Absorption coefficients were calculated to understand the surface depth as seen by the imager and the penetration depth of the surface heater (CO2 laser). The performance and operational specifications for the imager and image processing system are described in detail to provide an understanding of the equipment. Measurements made with the system were compared to thermocouple measurements and a calculated surface temperature distribution. This comparison showed that in certain regions the IR imager measurements were within 5 percent of the overall temperature difference across the free surface. In other regions the measurements were within + or - 10 percent of the overall temperature gradient across the free surface. The effective emissivity of silicone oil for these experimental conditions was also determined. Measurement errors and their possible solutions are discussed.

Pline, Alexander D.↗

Imaging Spectrometer on a Chip

A proposed visible-light imaging spectrometer on a chip would be based on the concept of a heterostructure comprising multiple layers of silicon-based photodetectors interspersed with long-wavelength-pass optical filters. In a typical application, this heterostructure would be replicated in each pixel of an image-detecting integrated circuit of the active-pixel-sensor type (see figure). The design of the heterostructure would exploit the fact that within the visible portion of the spectrum, the characteristic depth of penetration of photons increases with wavelength. Proceeding from the front toward the back, each successive long-wavelength-pass filter would have a longer cutoff wavelength, and each successive photodetector would be made thicker to enable it to absorb a greater proportion of incident longer-wavelength photons. Incident light would pass through the first photodetector and encounter the first filter, which would reflect light having wavelengths shorter than its cutoff wavelength and pass light of longer wavelengths. A large portion of the incident and reflected shorter-wavelength light would be absorbed in the first photodetector. The light that had passed through the first photodetector/filter pair of layers would pass through the second photodetector and encounter the second filter, which would reflect light having wavelengths shorter than its cutoff wavelength while passing light of longer wavelengths. Thus, most of the light reflected by the second filter would lie in the wavelength band between the cutoff wavelengths of the first and second filters. Thus, further, most of the light absorbed in the second photodetector would lie in this wavelength band. In a similar manner, each successive photodetector would detect, predominantly, light in a successively longer wavelength band bounded by the shorter cutoff wavelength of the preceding filter and the longer cutoff wavelength of the following filter.

Wang, Yu↗

X-Ray Detector for 1 to 30 keV

Array of silicon X-ray detecting diodes measures photon energy and provides image of X-ray pattern. Regardless of thickness of new X-ray detector, depletion region extends through it. Impinging X-rays generate electrons in quantities proportional to X-ray energy. X-ray detector is mated to chargecoupled-device array for image generation and processing. Useful in industrial part inspection, pulsed-plasma research and medical application.

Alcorn, G.↗

Infrared camera for 10-micron astronomy

An infrared imaging photometer employing a monolithic 32 x 32 pixel bismuth doped silicon charge injection device array is described. The device is primarily useful in the 8-13-micron atmospheric window. The detector is sufficiently sensitive to provide good performance on ground-based telescopes and promises to be very good for low background space flight operation.

Arens, J. F.↗

Techniques for the correction of topographical effects in scanning Auger electron microscopy

A number of ratioing methods for correcting Auger images and linescans for topographical contrast are tested using anisotropically etched silicon substrates covered with Au or Ag. Thirteen well-defined angles of incidence are present on each polyhedron produced on the Si by this etching. If N1 electrons are counted at the energy of an Auger peak and N2 are counted in the background above the peak, then N1, N1 - N2, (N1 - N2)/(N1 + N2) are measured and compared as methods of eliminating topographical contrast. The latter method gives the best compensation but can be further improved by using a measurement of the sample absorption current. Various other improvements are discussed.

Prutton, M.↗

The development of infrared detectors and mechanisms for use in future infrared space missions

The environment above earth's atmosphere offers significant advantages in sensitivity and wavelength coverage in infrared astronomy over ground-based observatories. In support of future infrared space missions, technology development efforts were undertaken to develop detectors sensitive to radiation between 2.5 micron and 200 micron. Additionally, work was undertaken to develop mechanisms supporting the imaging and spectroscopy requirements of infrared space missions. Arsenic-doped-Silicon and Antimony-doped-Silicon Blocked Impurity Band detectors, responsive to radiation between 4 micron and 45 micron, were produced in 128x128 picture element arrays with the low noise, high sensitivity performance needed for space environments. Technology development continued on Gallium-doped-Germanium detectors (for use between 80 micron and 200 micron), but were hampered by contamination during manufacture. Antimony-doped-Indium detectors (for use between 2.5 micron and 5 micron) were developed in a 256x256 pixel format with high responsive quantum efficiency and low dark current. Work began on adapting an existing cryogenic mechanism design for space-based missions; then was redirected towards an all-fixed optical design to improve reliability and lower projected mission costs.

Houck, James R.↗

Recent Developments in Microsystems Fabricated by the Liga-Technique

As an example of microsystems fabricated by the LIGA-technique (x-ray lithography, electroplating and molding), three systems are described and characterized: a triaxial acceleration sensor system, a micro-optical switch, and a microsystem for the analysis of pollutants. The fabrication technologies are reviewed with respect to the key components of the three systems: an acceleration sensor, and electrostatic actuator, and a spectrometer made by the LIGA-technique. Aa micro-pump and micro-valve made by using micromachined tools for molding and optical fiber imaging are made possible by combining LIGA and anisotropic etching of silicon in a batch process. These examples show that the combination of technologies and components is the key to complex microsystems. The design of such microsystems will be facilitated is standardized interfaces are available.

Schulz, J.↗

Toward the Development of Group III-V Photodetectors and Imaging Arrays

A collaboration between researchers at NASA Goddard Space Flight Center (GSFC) (Code 718.1) and the Johns Hopkins University Applied Physics Laboratory (APL) on the development of gallium nitride (GaN) based photodetectors has been in existence since July 1994. This collaboration, based on APL undertaking the material growth and GSFC undertaking the device processing, has led to discrete GaN photoconductive detectors with superior characteristics to those of similar devices reported in the literature and, more recently, to the development of state-of-the art 256x256 imaging arrays with the pixels indium bump-bonded to a silicon readout circuit (RIOC). The object of this proposal is to continue the collaboration for the period 1998-2002 by outlining a program of work at the APL on the metalorganic chemical vapor deposition (MOCVD) growth of GaN and related materials for UV detector applications. In particular, emphasis will be placed on the optimization of growth on 2 in diameter substrates, on the growth of In(sub x)Ga(1-x)N and Al(sub x)Ga(1-x)N alloy structures to produce devices with a wider range of tailored cut-off wavelengths, and on the growth of pn-junction structures for photovoltaic devices.

Wickenden, Dennis K.↗

Defect structure of EFG silicon ribbon

The defect structure of EFG ribbons was studied using EBIC, TEM and HVEM. By imaging the same areas in EBIC and HVEM, a direct correlation between the crystallographic nature of defects and their electrical properties was obtained. (1) Partial dislocations at coherent twin boundaries may or may not be electrically active. Since no microprecipitates were observed at these dislocations it is likely that the different electrical activity is a consequence of the different dislocation core structures. (2) 2nd order twin joins were observed which followed the same direction as the coherent first order twins normally associated with EFG ribbons. These 2nd order twin joins are in all cases strongly electrically active. EFG ribbons contain high concentrations of carbon. Since no evidence of precipitation was found with TEM it is suggested that the carbon may be incorporated into the higher order twin boundaries now known to exist in EFG ribbons.

Strunk, H.↗

Fabrication of large-area CCD detectors on high-purity, float-zone silicon

In this report on the fabrication of a 1024 x 1024 charge coupled device (CCD) imager to be used as a soft x-ray sensor onboard the Advanced X-ray Astronomical Facility (AXAF), the following conclusions were found: the dislocations that limited the performance of the high resistivity imager were characterized; the sources of stress were identified and the dislocations found were eliminated; and a charge transfer inefficiency (CTI) of 10(exp -6) and read noise as low as 1.3/e was demonstrated. This sensor must have low noise and a low CTI and must be radiation hardened to withstand any radiation damage from a space environment.

Gregory, J. A.↗

Photographic films as remote sensors for measuring albedos of terrestrial surfaces

To test the feasibility of remotely measuring the albedos of terrestrial surfaces from photographic images, an inquiry was carried out at ground level using several representative common surface targets. Problems of making such measurements with a spectrally selective sensor, such as photographic film, have been compared to previous work utilizing silicon cells. Two photographic approaches have been developed: a multispectral method which utilizes two or three photographic images made through conventional multispectral filters and a single shot method which utilizes the broad spectral sensitivity of black and white infrared film. Sensitometry related to the methods substitutes a Log Albedo scale for the conventional Log Exposure for creating characteristic curves. Certain constraints caused by illumination goemetry are discussed.

Pease, S. R.↗