Total ionizing dose and single event effects on 12-nm bulk FinFETs.
Abstract not provided.
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Abstract not provided.
The paper discusses the following: 1. Sun-Earth connections. 2. Heavy ions: galactic cosmic rays; solar particle events. 3. Protons: solar particle events; trapped. 4. Atmospheric neutrons. 5. Summary.
A viewgraph presentation on the development of a low cost, high speed tester reconfigurable Field Programmable Gata Array (FPGA) is shown. The topics include: 1) Introduction; 2) Objectives; 3) Tester Descriptions; 4) Tester Validations and Demonstrations; 5) Future Work; and 6) Summary.
Comparisons of radial dose calculation are performed, as well as the introduction of important physics to improve the calculation techniques. Also, the consequences to device performance are explored via numerical simulations.
The intent of this document is to provide guidance on when and what type of SEE tests should be performed on a device under test (DUT) based on orbit, technology, existing data, and application. It is NOT intended to provide a detailed guideline for how to perform proton SEE radiation tests on electronics.
No abstract available
Heavy ion testing of newly available GaN FETs from EPC were tested in March of 2012 at TAM. The EPC1010, EPC1001, EPC1012, and EPC1014 were tested for general radiation response from gold and xenon ions. Overall the devices showed radiation degradation commensurate with breakdown in isolation oxides, and similar testing by EPC and Microsemi agrees with these data. These devices were the first generation production of the device called Gen1. Gen2 parts are scheduled for later in the third quarter of FY2012
We show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to bit upsets. However the ReRAM system is vulnerable to SEFIs due to upsets in peripheral circuits, including the sense amplifier.
Neutrons can effectively be used to screen electronic parts intended to be used in Low Earth Orbit. This paper compares neutron with proton environments in spacecraft and discusses recent comparison testing.
We present the results of SEE testing with high energy protons and with low and high energy heavy ions. This paper summarizes test results for components considered for Low Earth Orbit and Deep Space applications.
In this presentation we will provide basic radiation effects on electronics, information on radiation effects and sources, a review of domestic SEE facilities and other radiation test facilities.
The intent of this document is to provide guidance on when and what type of -SEE tests should be performed on a device under test (OUT) based on orbit, technology, existing data, and application. It is NOT intended to provide a detailed guideline for how to perform proton SEE radiation tests on electronics.
Explore the source record for details and available documents.
Explore the source record for details and available documents.
Explore the source record for details and available documents.
Heavy ion testing of newly available GaN FETs from EPC were tested in March of 2012 at TAM. The EPC1010, EPC1001, EPC1012, and EPC1014 were tested for general radiation response from gold and xenon ions. Overall the devices showed radiation degradation commensurate with breakdown in isolation oxides, and similar testing by EPC and Microsemi agrees with these data. These devices were the first generation production of the device called Gen1. Gen2 parts are scheduled for later in the third quarter of FY2012
We present SEE test results for the Cobham SpaceWire transceiver after dosing the device to 300 krad(Si). We performed SEU characterization with variable data rates and patterns. Events resembling SEFIs were also observed and recorded.
Explore the source record for details and available documents.