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At least 181 records · Page 10

Growth of Homoepitaxial ZnO Semiconducting Films

As a high temperature wide-band-gap (3.3 eV at room temperature) semiconductor, ZnO has been used for many applications such as wave-guides, solar cells, and surface acoustic wave devices, Since ZnO has a 60 meV excitonic binding energy that makes it possible to produce excitonic lasing at room temperature, a recent surge of interest is to synthesize ZnO films for UV/blue/green laser diodes. These applications require films with a smooth surface, good crystal quality, and low defect density. Thus, homoepitaxial film growth is the best choice. Homoepitaxial films have been studied in terms of morphology, crystal structure, and electrical and optical properties. ZnO single crystal substrates grown by the hydrothermal method are mechanically polished and annealed in air for four hours before the films are deposited. The annealing temperature-dependence on ZnO substrate morphology and electrical properties is investigated. Films are synthesized by off-axis reactive sputtering deposition. This produces films that have very smooth surfaces with roughness less than or equal to 5 nm on a 5 microns x 5 microns area. The full width at half maximum of film theta rocking curves measured by the x-ray diffraction is slightly larger than that of the crystal substrate. Films are also characterized by measuring resistivity, optical transmittance, and photoluminescence. The properties of ZnO films grown on (0001) ZnO and (0001) sapphire substrates will also be compared and discussed.

Zhu, Shen↗

Study of Doped ZnO Films Synthesized by Combining Vapor Gases and Pulsed Laser Deposition

The properties and structure of the ZnO material are similar to those of the GaN. Since an excitonic binding energy of ZnO is about 60 meV, it has strong potential for excitonic lasing at the room temperature. This makes synthesizing ZnO films for applications attractive. However, there are several hurdles in fabricating electro-optical devices from ZnO. One of those is in growing doped p-type ZnO films. Although techniques have been developed for the doping of both p-type and n-type ZnO, this remains an area that can be improved. In this presentation, we will report the experimental results of using both thermal vapor and pulsed laser deposition to grow doped ZnO films. The films are deposited on (0001) sapphire, (001) Si and quartz substrates by ablating a ZnO target. The group III and V elements are introduced into the growth chamber using inner gases. Films are characterized by x-ray diffraction, scanning probe microscopy, energy dispersive spectroscopy, Auger electron spectroscopy, and electrical measurements. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 deg. In textured films, it rises to several degrees. Film surface morphology reveals an island growth pattern, but the size and density of these islands vary with the composition of the reactive gases. The electrical resistivity also changes with the doped elements. The relationship between the doping elements, gas composition, and film properties will be discussed.

Zhu, Shen↗

Advanced Electrical Materials and Components Development: An Update

The primary means to develop advanced electrical components is to develop new and improved materials for magnetic components (transformers, inductors, etc.), capacitors, and semiconductor switches and diodes. This paper will give an update of the Advanced Power Electronics and Components Technology being developed by the NASA Glenn Research Center for use in future Power Management and Distribution subsystems used in space power systems for spacecraft and lunar and planetary surface power. The initial description and status of this technology program was presented two years ago at the First International Energy Conversion Engineering Conference held at Portsmouth, Virginia, August 2003. The present paper will give a brief background of the previous work reported and a summary of research performed the past several years on soft magnetic materials characterization, dielectric materials and capacitor developments, high quality silicon carbide atomically smooth substrates, and SiC static and dynamic device characterization under elevated temperature conditions. The rationale for and the benefits of developing advanced electrical materials and components for the PMAD subsystem and also for the total power system will also be briefly discussed.

Schwarze, Gene E.↗

Mechanism of the oxidation of titanium disilicide.

Study of the oxidation of TiSi2 at temperatures of 300 to 1300 C. Wafers prepared using the techniques of powder metallurgy had densities of 95 to 98% of the theoretical value. On oxidation at temperatures up to 600 C, the polished wafers formed a protective, titania-silica glass. The rate data indicate a complex surface and diffusion-limited mechanism. Above 600 deg C, the oxide consisted of an amorphous SiO2 film with crystalline islands of TiO2 (rutile). From 1000 to 1300 C, parabolic kinetics with an activation energy of 21.3 kcal/mole were observed. These data are consistent with a model in which the rate-determining step is the diffusion of oxygen through the silica film with the simultaneous diffusion of titanium from the substrate to the islands of rutile growing on top of the amorphous silica.

Schwettmann, F. N.↗

Poco Graphite Inc. SuperSiC 0.25m Mirror Cryogenic Test Result

SuperSiC, a low areal density material, developed by POCO Graphite, have been used as mirror substrate for high energy lasers, laser radar systems, surveillance, telescopes, scan mirrors and satellites. SuperSiC has excellent thermal properties and cryogenic stability. It exhibits exceptional polishability for reflective optics with high strength, stiffness, and excellent thermal conductivity. A lightweighted 0.2-diameter polished SuperSic mirror was tested at cryogenic temperature at NASMSFC. Optical test results showed 6nm cry0 deformation from ambient to 30 degrees Kelvin and little to no change in its surface figure due to cry0 cycling.

Eng, Ron↗

Method and Apparatus for the Quantification of Particulate Adhesion Forces on Various Substrates

Mitigation strategies for lunar dust adhesion have typically been limited to qualitative analysis. This technical memorandum describes the generation and operation of an adhesion testing device capable of quantitative assessment of adhesion forces between particulates and substrates. An aerosolization technique is described to coat a surface with a monolayer of particulates. Agitation of this surface, via sonication, causes particles to dislodge and be gravitationally fed into an optical particle counter. Experimentally determined adhesion force values are compared to forces calculated from van der Waals interactions and are used to calculate the work of adhesion using Johnson-Kendall-Roberts (JKR) theory. Preliminary results indicate that a reduction in surface energy and available surface area, through topographical modification, improve mitigation of particulate adhesion.

Wohl, Christopher J.↗

Calibration of the Soft X-ray Telescopes (SXT) Onboard the ASTRO-H Satellite

ASTRO-H is an astrophysics satellite dedicated for non-dispersive X-ray spectroscopic study on selective celestial X-ray sources. Among the onboard instruments there are four Wolter-I X-ray mirrors of their reflectors' figure in conical approximation. Two of the four are soft X-ray mirrors, of which the energy range is from a few hundred eV to 15 keV. The focal point instruments will be a calorimeter (SXS) and a CCD camera (SXI), respectively. The mirrors were in quadrant configuration with photons being reflected consecutively in the primary and secondary stage before landing on the focal plane of 5.6 m away from the interface between the two stages. The reflectors of the mirror are made of heat-formed aluminum substrate of the thickness gauged of 152 m, 229 m, and 305 m of the alloy 5052 H-19, followed by epoxy replication on gold-sputtered smooth Pyrex cylindrical mandrels to acquire the X-ray reflective surface. The epoxy layer is 10 m nominal and surface gold layer of 0.2 m. Improvements on angular response over its predecessors, e.g. Astro-E1/Suzaku mirrors, come from error reduction on the figure, the roundness, and the grazing angle/radius mismatching of the reflecting surface, and tighter specs and mechanical strength on supporting structure to reduce the reflector positioning and the assembly errors. Each soft x-ray telescope (SXT), FM1 or FM2, were integrated from four independent quadrants of mirrors. The stray-light baffles, in quadrant configuration, were mounted onto the integrated mirror. Thermal control units were attached to the perimeter of the integrated mirror to keep the mirror within operating temperature in space. The completed instrument went through a series of optical alignment, thus made the quadrant images confocal and their optical axes in parallel to achieve highest throughput possible. Environmental tests were carried out, and optical quality of the telescopes has been confirmed. The optical and x-ray calibrations also include: angular resolution, effective area in the energy range of ~ 0.4 - 12keV, off-axis response, etc. Some of those are being carried out by our counterpart at JAXA/ISAS, Japan. We report the calibration results of the FM1 and FM2 that were obtained at Goddard Space Flight Center.

ASTRO-H Satellite↗

Simulation studies for surfaces and materials strength

During this reporting period three investigations were carried out. The first area of research concerned the analysis of the structure-energy relationship in small clusters. This study is very closely related to the improvement of the potential energy functions which are suitable and simple enough to be used in atomistic simulation studies. Parameters obtained from ab initio calculations for dimers and trimers of Al were used to estimate energetics and global minimum energy structures of clusters continuing up to 15 Al atoms. The second research topic addressed modeling of the collision process for atoms impinging on surfaces. In this simulation study qualitative aspects of the O atom collision with a graphite surface were analyzed. Four different O/graphite systems were considered and the aftermath of the impact was analyzed. The final area of investigation was related to the simulation of thin amorphous Si films on crystalline Si substrates. Parameters obtained in an earlier study were used to model an exposed amorphous Si surface and an a-Si/c-Si interface. Structural details for various film thicknesses were investigated at an atomistic level.

Halicioglu, T.↗

Variable-Energy Ion Beams For Modification Of Surfaces

Beam of low-energy negative oxygen ions used to grow layer of silicon dioxide on silicon. Beam unique both in purity, contains no molecular oxygen or other charged species, and in low energy, which is insufficient to damage silicon by physically displacing atoms. Low-energy growth accomplished with help of ion-beam apparatus. Directs electrons into crosswise stream of gas, generating stream of negative ions. Pair of charged plates separates ions from accompanying electrons and diverts ion beam to target - silicon substrate. Diameter of beam at target 0.5 to 0.75 cm. Promises useful device to study oxidation of semiconductors and, in certain applications, to replace conventional oxidation processes.

Chutjian, Ara↗

InGaAs/InP Monolithic Interconnected Modules (MIM) for Thermophotovoltaic Applications

There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between systems efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) devices series -connected on a single semi-insulating indium phosphide (InP) substrate. The MIMs are exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight series interconnected cells. MIM devices, produced from 0,74 eV InGAAs, have demonstrated V(sub infinity) = 3.23 volts, J(sub sc) = 70 mA/sq cm and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurement (less than 2 microns) of these devices indicate a reflectivity of less than 82%. MIM devices produced from 0.55 eV InGaAs have also been den=monstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM1) have been demonstrated.

Wilt, David M.↗

Material growth and characterization directed toward improving III-V heterojunction solar cells

In addition to the existing materials growth laboratory, the photolithographic facility and the device testing facility were completed. The majority of equipment for data acquisition, solar cell testing, materials growth and device characterization were received and are being put into operation. In the research part of the program, GaAs and GaA1As layers were grown reproducibly on GaAs substrates. These grown layers were characterized as to surface morphology, thickness and thickness uniformity. The liquid phase epitaxial growth process was used to fabricate p-n junctions in Ga(1-x)A1(x)As. Sequential deposition of two alloy layers was accomplished and detailed analysis of the effect of substrate quality and dopant on the GaA1As layer quality is presented. Finally, solar cell structures were formed by growing a thin p-GaA1As layer upon an epitaxial n-GaA1As layer. The energy gap corresponding to the long wavelength cutoff of the spectral response characteristic was 1.51-1.63 eV. Theoretical calculations of the spectral response were matched to the measured response.

Stefanakos, E. K.↗

Charging control techniques

Transparent conductive thin films of indium oxide and indium-tin oxide were evaluated for their properties to control charge buildup on satellite materials. Both oxide coatings were evaluated for their uniformity, stability, reproducibility and characteristics on various substrate materials such as FEP Teflon, Kapton, and glass. The process development toward optimization and characterization of these thin semiconductor oxide coatings and the evaluation on large sizes performed for qualification for use on thermal control satellite materials is described. The materials have been characterized in multiple energy electron plasma environment and at low temperatures. All radiation measurements of the coatings under simulated substorm conditions have exhibited the characteristics of stable charge control. Measurement of surface potential during and after irradiation by electrons up to 30 KeV and ionizing gamma radiation show an effective stable grounding surface.

Schmidt, R. E.↗

Electrical and Optical Performance Characteristics of 0.74-eV p/n InGaAs Monolithic Interconnected Modules

There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) cells series-connected on a single semi-insulating indium phosphide (InP) substrate. The MIM is exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight (8) series interconnected cells. MIM devices, produced from 0.74-eV InGaAs, have demonstrated V(sub oc) = 3.2 volts, J(sub sc) = 70 mA/sq cm, and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurements (greater than 2 micron) of these devices indicate a reflectivity of greater than 82%. MIM devices produced from 0.55-eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.

Wilt, David M.↗

Electrical and Optical Performance Characteristics of p/n InGaAs Monolithic Interconnected Modules

There has been a traditional trade-off in ThermoPhotoVoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A Monolithic Interconnected Module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual Indium Gallium Arsenide (InGaAs) devices series-connected on a single semi-insulating Indium Phosphide (InP) substrate. The MIMs are exposed to the entire emitter output, thereby maximizing output power density. An InfraRed (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight (8) series interconnected cells. MIM devices, produced from 0.74eV InGaAs, have demonstrated V(sub infinity) = 3.2 volts, J(sub sc) = 70 mA/sq cm and a fill factor of 66% under flashlamp testing. IR reflectance measurements (greater than 2 microns) of these devices indicate a reflectivity of greater than 82%. MIM devices produced from 0.55 eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.

Wilt, David M.↗

Surfactant Facilitated Spreading of Aqueous Drops on Hydrophobic Surfaces

Microgravity technologies often require aqueous phases to spread over nonwetting hydrophobic solid/surfaces. At a hydrophobic surface, the air/hydrophobic solid tension is low, and the solid/aqueous tension is high. A large contact angle forms as the aqueous/air tension acts together with the solid/air tension to balance the large solid/aqueous tension. The aqueous phase, instead of spreading, is held in a meniscus by the large angle. Surfactants facilitate the wetting of water on hydrophobic surfaces by adsorbing on the water/air and hydrophobic solid/water interfaces and lowering the surface tensions of these interfaces. The tension reductions decrease the contact angle, which increases the equilibrium wetted area. Hydrocarbon surfactants (i.e. amphiphiles with a hydrophobic chain of methylene groups attached to a large polar group to give aqueous solubility) do not reduce significantly the contact angles of the very hydrophobic surfaces such as parafilm or polyethylene. Trisiloxane surfactants (amphiphiles with a hydrophobe consisting of methyl groups linked to a trisiloxane backbone in the form of a disk ((CH3)3-Si-O-Si-O-Si(CH3)3)) and an extended ethoxylate (-(OCH2CH2)n-) polar group in the form of a chain with seven or eight units) can significantly reduce the contact angle of water on a very hydrophobic surface and cause rapid and complete (or nearly complete) spreading (lermed superspreading). The overall goal of the research described in this proposal is to establish and verify a theory for how trisiloxanes cause superspreading, and then use this knowledge as a guide to developing more general hydrocarbon based surfactant systems which superspread and can be used in microgravity. We propose that the trisiloxane surfactants superspread when the siloxane adsorbs, the hydrophobic disk parts of the molecule adsorb onto the surface removing the surface water. Since the cross sectional area of the disk is larger than that of the extended ethoxylate chain, the disks can form a space filling mat on the surface which removes a significant amount of the surface water. The water adjacent to the hydrophobic solid surface is of high energy due to incomplete hydrogen bonding; its removal significantly lowers the tension and reduces the contact angle. Hydrocarbon surfactants cannot remove as much surface water because their large polar groups prevent the chains from cohering lengthwise. In our report last year we presented a poster describing the preparation of model very hydrophobic surfaces which are homogeneous and atomically smooth using self assembled monolayers of octadecyl trichlorosilane (OTS). In this poster we will use these surfaces as test substrates in developing hydrocarbon based surfactant systems which superspread. We studied a binary hydrocarbon surfactant systems consisting of a very soluble large polar group polyethylene oxide surfactant (C12E6 (CH3(CH2)11(OCH2CH2)6OH) and a long chain alcohol dodecanol. By mixing the alcohol with this soluble surfactant we have found that the contact angle of the mixed system on our test hydrophobic surfaces is very low. We hypothesize that the alcohol fills in the gaps between adjacent adsorbed chains of the large polar group surfactant. This filling in removes the surface water and effects the decrease in contact angle. We confirm this hypothesis by demonstrating that at the air/water interface the mixed layer forms condensed phases while the soluble large polar group surfactant by itself does not. We present drop impact experiments which demonstrate that the dodecanol/C12E6 mixture is effective in causing impacting drops to spread on the very hydrophobic model OTS surfaces.

Kumar, Nitin↗

New Effective Material Couple--Oxide Ceramic and Carbon Nanotube-- Developed for Aerospace Microsystem and Micromachine Technologies

The prime driving force for using microsystem and micromachine technologies in transport vehicles, such as spacecraft, aircraft, and automobiles, is to reduce the weight, power consumption, and volume of components and systems to lower costs and increase affordability and reliability. However, a number of specific issues need to be addressed with respect to using microsystems and micromachines in aerospace applications--such as the lack of understanding of material characteristics; methods for producing and testing the materials in small batches; the limited proven durability and lifetime of current microcomponents, packaging, and interconnections; a cultural change with respect to system designs; and the use of embedded software, which will require new product assurance guidelines. In regards to material characteristics, there are significant adhesion, friction, and wear issues in using microdevices. Because these issues are directly related to surface phenomena, they cannot be scaled down linearly and they become increasingly important as the devices become smaller. When microsystems have contacting surfaces in relative motion, the adhesion and friction affect performance, energy consumption, wear damage, maintenance, lifetime and catastrophic failure, and reliability. Ceramics, for the most part, do not have inherently good friction and wear properties. For example, coefficients of friction in excess of 0.7 have been reported for ceramics and ceramic composite materials. Under Alternate Fuels Foundation Technologies funding, two-phase oxide ceramics developed for superior high-temperature wear resistance in NASA's High Operating Temperature Propulsion Components (HOTPC) project and new two-layered carbon nanotube (CNT) coatings (CNT topcoat/iron bondcoat/quartz substrate) developed in NASA's Revolutionary Aeropropulsion Concepts (RAC) project have been chosen as a materials couple for aerospace applications, including micromachines, in the nanotechnology lubrication task because of their potential for superior friction and wearf properties in air and in an ultrahigh vacuum, spacelike environment. At the NASA Glenn Research Center, two-phase oxide ceramic eutectics, Al2O3/ZrO2(Y2O3), were directionally solidified using the laser-float-zone process, and carbon nanotubes were synthesized within a high-temperature tube furnace at 800 C. Physical vapor deposition was used to coat all quartz substrates with 5-nm-thick iron as catalyst and bondcoat, which formed iron islands resembling droplets and serving as catalyst particles on the quartz. A series of scanning electron micrographs showing multiwalled carbon nanotubes directionally grown as aligned "nanograss" on quartz is presented. Unidirectional sliding friction eperiments were conducted at Glenn with the two-layered CNT coatings in contact with the two-phase Al2O3/ZrO2(Y2O3) eutectics in air and in ultrachigh vacuum. The main criteria for judging the performance of the materials couple for solid lubrication and antistick applications in a space environment were the coefficient of friction and the wear resistance (reciprocal of wear rate), which had to be less than 0.2 and greater than 10(exp 5) N(raised dot)/cubic millimetes, respectively, in ultrahigh vacuum. In air, the coefficient of friction for the CNT coatings in contact with Al2O3/ZrO2 (Y2O3) eutectics was 0.04, one-fourth of that for quartz. In an ultrahigh vacuum, the coefficient of friction for CNT coatings in contact with Al2O3/ZrO2 (Y2O3) was one-third of that for quartz. The two-phase Al2O3/ZrO2 (Y2O3) eutectic coupled with the two-layered CNT coating met the coefficient of friction and wear resistance criteria both in air and in an ultrahigh vacuum, spacelike environment. This material's couple can dramatically improve the stiction (or adhesion), friction, and wear resistance of the contacting surfaces, which are major issues for microdevices and micromachines.

Miyoshi, Kazuhisa↗

Surface charge kinetics near metal-dielectric interfaces exposed to kilovolt electron flux

Interfaces between dielectric films and grounded metallic boundaries were exposed, in vacuum, to monoenergic electron fluxes having energies up to 22 keV. Two principal concerns were the measuring of the charge distributions on dielectrics and the determining of causes of flashovers, events where dielectric surface charges abruptly transfer to the metallic structures. Surface charges are perturbed within 10 mm of interfaces. Perturbations are relatively small except within about 3 mm of the interface. The probability of flashover was found to be related to microscopic imperfections in the interfaces. As flashovers occur in an exposed metal substrate, points become burned into the dielectric along the slit. As these points develop, the probability of flashover increases greatly. An interface which is highly immune to flashover was formed by covering a dielectric film with a 1.5-mm-thick aperture plate which exposes the film through a machined opening.

Robinson, J. W.↗

Preparation and analysis of particulate metal deposits

Small particles and clusters of palladium were grown by deposition from the vapor phase under ultrahigh vacuum conditions. Amorphous and crystalline support films of Al2O3 and ultrathin amorphous carbon films were used as substrate materials. The growth of the metal deposit was monitored in situ by scanning transmission diffraction of energy-filtered 100 kV electrons and high resolution transmission electron microscopy (TEM) analysis was performed in a separate instrument. It was established by in situ TEM, however, that the transfer of specimens in this case did not unduly affect the size and distribution of deposit particles. It was found that the cleanness, stoichiometry, crystallinity and structural perfection of the support surface play an essential role in determining the crystalline perfection and structure of the particles. The smallest palladium clusters reproducibly prepared contained not more than six atoms but size determinations below 1 nm average particle diameter are very problematic with conventional TEM. Palladium particles grown on carbon supports feature an impurity-stabilized mosaic structure.

Poppa, H.↗