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All sources NASA NTRS DOE OSTI

DOE OSTI2024

Dynamics of carrier injection through V-defects in long wavelength GaN LEDs

The efficiency of high-power operation of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on the realization of uniform hole distribution between the QWs. In long wavelength InGaN/GaN QW LEDs, the thermionic interwell hole transport is hindered by high GaN barriers. However, in polar LED structures, these barriers may be circumvented by the lateral hole injection via semipolar {$10\bar{1}1$} QWs that form on the facets of V-defects. The efficiency of such carrier transfer depends on the transport time since transport in the semipolar QWs is competed by recombination. In this work, we study the carrier transfer from the semipolar to polar QWs by time-resolved photoluminescence in long wavelength (green to red) LEDs. We find that the carrier transfer through the semipolar QWs is fast, a few tens of picoseconds with the estimated room temperature ambipolar diffusion coefficient of ∼5.5 cm 2 /s. With diffusion much faster than recombination, the hole transport from the p-side of the structure to the polar QWs should proceed without a substantial loss, contributing to the high efficiency of long wavelength GaN LEDs.

Crystallographic defects↗

DOE OSTI2024

Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

The efficiency of operation of GaN-based light emitting diodes (LEDs) to a large degree relies on realization of a uniform hole distribution between multiple quantum wells (QWs) of the active region. Since the direct thermionic transport between the QWs is inefficient, the hole injection through semipolar {$10\bar{1}1$} QWs that form on the facets of V-defects has been suggested as an alternative approach. However, for an efficient LED operation, the carrier distribution should be uniform not only vertically, between the QWs but also laterally, within individual QWs. In this work, the lateral carrier distribution in long wavelength InGaN/GaN QW LEDs is studied by the scanning near-field optical microscopy. The measurements have shown that emission is concentrated around the V-defect injectors. At high currents, the diffusion length of holes in polar QWs was found to be ∼0.6–1 μm and the hole diffusion coefficient ∼0.6 cm 2 /s. The obtained data should aid design of the V-defect injectors for a laterally uniform carrier distribution in the active region QWs.

Current crowding↗

NASA NTRS2010

InGaP Heterojunction Barrier Solar Cells

A new solar-cell structure utilizes a single, ultra-wide well of either gallium arsenide (GaAs) or indium-gallium-phosphide (InGaP) in the depletion region of a wide bandgap matrix, instead of the usual multiple quantum well layers. These InGaP barrier layers are effective at reducing diode dark current, and photogenerated carrier escape is maximized by the proper design of the electric field and barrier profile. With the new material, open-circuit voltage enhancements of 40 and 100 mV (versus PIN control systems) are possible without any degradation in short-circuit current. Basic tenets of quantum-well and quantum- dot solar cells are utilized, but instead of using multiple thin layers, a single wide well works better. InGaP is used as a barrier material, which increases open current, while simultaneously lowering dark current, reducing both hole diffusion from the base, and space charge recombination within the depletion region. Both the built-in field and the barrier profile are tailored to enhance thermionic emissions, which maximizes the photocurrent at forward bias, with a demonstrated voltage increase. An InGaP heterojunction barrier solar cell consists of a single, ultra-wide GaAs, aluminum-gallium-arsenide (AlGaAs), or lower-energy-gap InGaP absorber well placed within the depletion region of an otherwise wide bandgap PIN diode. Photogenerated electron collection is unencumbered in this structure. InGaAs wells can be added to the thick GaAs absorber layer to capture lower-energy photons.

Welser, Roger E.↗

DOE OSTI2024

Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor

Abstract This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic CVD (MOCVD) with an ultra-low ideality factor ( η ) of 1.65, a high Schottky barrier height of 1.94 eV, a breakdown voltage ( BV ) of 640 V, and a record high normalized BV by the anode-to-cathode distance. The device current was dominated by thermionic emission, while most previously reported AlN SBDs suffered from defect-induced current with higher η (>4). This work represents a significant step towards high-performance ultra-wide bandgap AlN-based high-voltage and high-power devices.

Physics↗

NASA NTRS1978

Performance of a thermionic converter module utilizing emitter and collector heat pipes

A thermionic converter module simulating a configuration for an out-of-core thermionic nuclear reactor was designed, fabricated, and tested. The module consists of three cylindrical thermionic converters. The tungsten emitter of the converter is heated by a tungsten, lithium heat pipe. The emitter heat pipes are immersed in a furnace, insulated by MULTI-FOIL thermal insulation, and heated by tungsten radiation filaments. The performance of each thermionic converter was characterized before assembly into the module. Dynamic voltage, current curves were taken using a 60 Hz sweep and computerized data acquisition over a range of emitter, collector, and cesium-reservoir temperatures. An output power of 215 W was observed at an emitter temperature of 1750 K and a collector temperature of 855 K for a two diode module. With a three diode module, an output power of 270 W was observed at an average emitter temperature of 1800 K and a Collector temperature of 875 K.

Kroeger, E. W.↗

NASA NTRS1975

Practical aspects of plasma processes in thermionic energy converters

Over a decade of cesium vapor thermionic converter research has yielded sufficient understanding of the basic plasma processes to permit application of this understanding to improvement of converter performance. A performance index is defined which relates such converter improvements directly to increases in system performance. A prime practical objective of current research is to reduce or eliminate the arc potential drop presently required to sustain the plasma in the ignited cesium diode. This will substantially increase the energy conversion efficiency, and will permit operation at substantially lower emitter temperatures without requiring lower collector (heat rejection) temperature. Present work is concentrating on evaluating and reducing to practice the several methods employing auxiliary ion sources to eliminate the arc drop which were demonstrated over a decade ago: i.e., various ignited and unignited triode concepts, and the pulse-enhanced diode and triode. These methods are reviewed in light of present understanding and recent experimental data.

Rasor, N. S.↗

DOE OSTI2024

Wavelength modulation laser-induced fluorescence for plasma characterization

Laser-Induced Fluorescence (LIF) spectroscopy is an essential tool for probing ion and atom velocity distribution functions (VDFs) in complex plasmas. VDFs carry information about the kinetic properties of species that is critical for plasma characterization. Accurate interpretation of these functions is challenging due to factors such as multicomponent distributions, broadening effects, and background emissions. Our research investigates the use of Wavelength Modulation (WM) LIF to enhance the sensitivity of VDF measurements. Unlike standard Amplitude Modulation (AM) methods, WM–LIF measures the derivative of the LIF signal. This approach makes variations in VDF shape more pronounced. VDF measurements with WM–LIF were investigated with both numerical modeling and experimental measurements. The developed model enables the generation of both WM and AM signals, facilitating comparative analysis of fitting outcomes. Experiments were conducted in a weakly collisional argon plasma with magnetized electrons and non-magnetized ions. Measurements of the argon ion VDFs employed a narrow-band tunable diode laser, which scanned the 4p 4 D 7/2 –3d 4 F 9/2 transition centered at 664.553 nm in vacuum. A lock-in amplifier detected the second harmonic WM signal, which was generated by modulating the laser wavelength with an externally controlled piezo-driven mirror of the diode laser. Finally, our findings indicate that the WM–LIF signal is more sensitive to fitting parameters, allowing for better identification of VDF parameters such as the number of distribution components, their temperatures, and velocities. In addition, WM–LIF can serve as an independent method to verify AM measurements and is particularly beneficial in environments with substantial light noise or background emissions, such as those involving thermionic cathodes and reflective surfaces.

47 OTHER INSTRUMENTATION↗

NASA NTRS1974

Energy-conversion research and development with diminiodes

Diminiodes are variable-gap cesium diodes with plane emitters and guarded collectors a few millimeters in diameter. This miniaturization allows the electrodes to be made of little pieces of rare materials like single crystals of unusual metals or metallides. In addition to smallness, diminiode advantages include simplicity, precision, fabrication ease, parts interchangeability, cleanliness, full instrumentation, ruggedness, and economy. The diminiode design also stresses effective, economical use with computers that control, collect, and correlate thermionic current and voltage data. Such diminiode tests completed recently for ultrapure metal electrodes produced relatively low, sharply defined ultimate power outputs.

Morris, J. F.↗

NASA NTRS1985

Thermionic noise measurements for on-line dispenser cathode diagnostics for linear beam microwave tubes

A test stand has been set up to measure the current fluctuation noise properties of B- and M-type dispenser cathodes in a typical TWT gun structure. Noise techniques were used to determine the work function distribution on the cathode surfaces. Significant differences between the B and M types and significant changes in the work function distribution during activation and life are found. In turn, knowledge of the expected work function can be used to accurately determine the cathode-operating temperatures in a TWT structure. Noise measurements also demonstrate more sensitivity to space charge effects than the Miram method. Full automation of the measurements and computations is now required to speed up data acquisition and reduction. The complete set of equations for the space charge limited diode were programmed so that given four of the five measurable variables (J, J sub O, T, D, and V) the fifth could be computed. Using this program, we estimated that an rms fluctuation in the diode spacing d in the frequency range of 145 Hz about 20 kHz of only about 10 to the -5 power A would account for the observed noise in a space charge limited diode with 1 mm spacing.

Holland, C.↗

DOE OSTI2025

Two Mechanisms Limiting the Emitted Electron Current from a Cathode to an Anode

It is known that the current of emitted electrons flowing through a plasma can saturate upon formation of a potential well adjacent to the cathode (the “space charge effect”). Here, we demonstrate another saturation mechanism that will often set a more restrictive limit on the global current. When “backflow saturation” occurs, the cathode sheath weakens to allow emitted electrons that already entered the plasma to backflow to the cathode. This effect could not be captured by studies modelling the cathode sheath by itself because its origin is coupled to processes in the interior plasma and anode sheath. By modeling a full plasma diode, we show that depending on conditions the global current can be limited in four ways; by backflow alone, by space charge alone, by both mechanisms in a stable cooperative form, or by both in a competing oscillatory form. Published by the American Physical Society 2025

Laboratory plasma↗

NASA NTRS1979

Thermionic cathode life-test studies

A NASA-Lewis Research Center program for life testing commercial, high-current-density thermionic cathodes has been in progress since 1971. The purpose of the program is to develop long-life power microwave tubes for space communications. Four commercial-type cathodes are being evaluated in this investigation. They are the 'Tungstate', 'S' type, 'B' type, and 'M' type cathodes, all of which are capable of delivering 1 A/ sq cm or more of emission current at an operating temperature in the range of 1000-1100 C. The life test vehicles used in these studies are similar in construction to that of a high-power microwave tube and employ a high-convergence electron-gun structure; in contrast to earlier studies that used close-space diodes. These guns were designed for operation at 2 A/sq cm of cathode loading. The 'Tungstate' cathodes failed at 700 h or less and the 'S' cathode exhibited a lifetime of about 20,000 h. One 'B' cathode has failed after 27,000 h, the remaining units continuing to operate after up to 30,000 h. Only limited data are now available for the 'M' cathode, because only one has been operated for as long as 19,000 h. However, the preliminary results indicate the emission current from the 'M' cathode is more stable than the 'B' cathode and that it can be operated at a true temperature approximately 100 C lower than for the 'B' cathode.

Forman, R.↗

NASA NTRS1976

Diminiode thermionic conversion with 111-iridium electrodes

Preliminary data indicating thermionic-conversion potentialities for a 111-iridium emitter and collector spaced 0.2 mm apart are presented. These results comprise output densities of current and of power as functions of voltage for three sets of emitter, collector, and reservoir temperatures: 1553, 944, 561 K; 1605, 898, 533 K; and 1656, 1028, 586 K. For the 1605 K evaluation, estimates produced work-function values of 2.22 eV for the emitter and 1.63 eV for the collector with a 2.0-eV barrier index (collector work function plus interelectrode voltage drop) corresponding to the maximum output of 5.5 W/sq cm at 0.24 volt. The current, voltage curve for the 1656 K 111-iridium diminiode yields a 6.2 W/sq cm maximum at 0.25 volt and is comparable with the 1700 K envelope for a diode with an etched-rhenium emitter and a 0.025-mm electrode gap made by TECO and evaluated by NASA.

Koeger, E. W.↗