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At least 181 records · Page 10

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NASA NTRS1976

Development of InSb charge-coupled infrared imaging devices: Linear imager

The following results were accomplished in the development of charge coupled infrared imaging devices: (1) a four-phase overlapping gate with 9 transfers (2-bits) and 1.0-mil gate lengths was successfully operated, (2) the measured transfer efficiency of 0.975 for this device is in excellent agreement with predictions for the reduced gate length device, (3) mask revisions of the channel stop metal on the 8582 mask have been carried out with the result being a large increase in the dc yield of the tested devices, (4) partial optical sensitivity to chopped blackbody radiation was observed for an 8582 9-bit imager, (5) analytical consideration of the modulation transfer function degradation caused by transfer inefficiency in the CCD registers was presented, and (6) for larger array lengths or for the insertion of isolated bits between sensors, improvements in InSb fabrication technology with corresponding decrease in the interface state density are required.

Phillips, J. D.↗

NASA NTRS1985

Physics and design of advanced IR bolometers and photoconductors

The state-of-the-art in photoconductors and bolometers is reviewed, centering on the materials development and concepts of extrinsic Si and Ge devices. It is suggested that in the field of 2-D detector arrays the hybrid circuits containing a photoconductor or a photodiode array, bonded with In solder to a switched MOS readout device with up to 60 x 60 elements, will produce superior performance. Other systems discussed include charge-coupled devices, developed for visible-light imaging and adapted to IR imaging, and charge-injection devices, a monolithic combination of a standard photoconductor and a metal-insulator-semiconductor capacitor. Finally, it is pointed out that a nonequilibrium theory of bolometer noise demonstrates the possibility of reducing the traditionally accepted noise limits by 60 percent for Johnson noise and 30 percent for the noise from phonons in the thermal link of the bolometer.

Haller, E. E.↗

NASA NTRS1987

CCD Luminescence Camera

New diagnostic tool used to understand performance and failures of microelectronic devices. Microscope integrated to low-noise charge-coupled-device (CCD) camera to produce new instrument for analyzing performance and failures of microelectronics devices that emit infrared light during operation. CCD camera also used to indentify very clearly parts that have failed where luminescence typically found.

Janesick, James R.↗

NASA NTRS2004

Compact Instrument for Measuring Profile of a Light Beam

The beamviewer is an optical device designed to be attached to a charge-coupled-device (CCD) image detector for measuring the spatial distribution of intensity of a beam of light (the beam profile ) at a designated plane intersecting the beam. The beamviewer-and-CCD combination is particularly well suited for measuring the radiant- power profile (for a steady beam) or the radiant-energy profile (for a pulsed beam) impinging on the input face or emerging from the output face of a bundle of optical fibers. The beamviewer and-CCD combination could also be used as a general laboratory instrument for profiling light beams, including beams emerging through small holes and laser beams in free space.

Papanyan, Valeri↗

NASA NTRS1980

InSb charge coupled infrared imaging device: The 20 element linear imager

The design and fabrication of the 8585 InSb charge coupled infrared imaging device (CCIRID) chip are reported. The InSb material characteristics are described along with mask and process modifications. Test results for the 2- and 20-element CCIRID's are discussed, including gate oxide characteristics, charge transfer efficiency, optical mode of operation, and development of the surface potential diagram.

Thom, R. D.↗

NASA NTRS1981

A surface acoustic wave /SAW/ charge transfer imager

An 80 MHz, 2-microsecond surface acoustic wave charge transfer device (SAW-CTD) has been fabricated in which surface acoustic waves are used to create traveling longitudinal electric fields in the silicon substrate and to replace the multiphase clocks of charge coupled devices. The traveling electric fields create potential wells which will carry along charges that may be stored in the wells; the charges may be injected into the wells by light. An optical application is proposed where the SAW-CTD structure is used in place of a conventional interline transfer design.

Papanicolauo, N. A.↗

NASA NTRS1992

CCDs and photon counting devices: Applications in space and from the ground

The development of the 2048 by 2048 CCD (Charge Coupled Device) for a second generation space telescope instrument has resulted in devices with very few defects, dark currents of less than 12 electrons/pixel/hour at -80 deg, readout noise levels of less than 4 electrons rms, and excellent charge transfer efficiency at signal levels of less than 10 electrons. A second generation of devices that capitalize on these characteristics have been produced and are currently in test. Faster frame transfer devices that preserve these characteristics have been designed that include tridirectional taps in the serial register. The state of the art in CCD's as photon counting detectors is reviewed.

Delamere, W. A.↗

NASA NTRS2003

Fabricating a hybrid imaging device

A hybrid detector or imager includes two substrates fabricated under incompatible processes. An array of detectors, such as charged-coupled devices, are formed on the first substrate using a CCD fabrication process, such as a buried channel or peristaltic process. One or more charge-converting amplifiers are formed on a second substrate using a CMOS fabrication process. The two substrates are then bonded together to form a hybrid detector.

Wadsworth, Mark↗

NASA NTRS1984

LEC GaAs for integrated circuit applications

Recent developments in liquid encapsulated Czochralski techniques for the growth of semiinsulating GaAs for integrated circuit applications have resulted in significant improvements in the quality and quantity of GaAs material suitable for device processing. The emergence of high performance GaAs integrated circuit technologies has accelerated the demand for high quality, large diameter semiinsulating GaAs substrates. The new device technologies, including digital integrated circuits, monolithic microwave integrated circuits and charge coupled devices have largely adopted direct ion implantation for the formation of doped layers. Ion implantation lends itself to good uniformity and reproducibility, high yield and low cost; however, this technique also places stringent demands on the quality of the semiinsulating GaAs substrates. Although significant progress was made in developing a viable planar ion implantation technology, the variability and poor quality of GaAs substrates have hindered progress in process development.

Kirkpatrick, C. G.↗

NASA NTRS2001

Fabricating a hybrid imaging device having non-destructive sense nodes

Wadsworth, Mark↗

NASA NTRS1980

Frequency response of charge transfer in MOS inversion layers

The dynamics of charge transfer from a reservoir into an MOS inversion layer, which limits the frequency response of an MOS transistor or a charge-coupled device, is investigated. Using Berman and Kerr's model of space-charge capacitance in the semiconductor, a small-signal distributed model is developed for an MOS structure which transfers charge in an inversion channel due to a variation in the gate voltage. The dynamics of the charge transfer is characterized by a time constant which is determined by the length of the inversion channel and its mobility. Experimental data of gate capacitance vs frequency, taken from a test structure with a diffused source/drain well, are satisfactorily fitted by theoretical curves derived from the model. The channel mobility is precisely determined from the adjusted time constant. The influence of interface states on the capacitance-frequency relationship is also briefly discussed.

Lieneweg, U.↗

NASA NTRS1983

Aluminum/ammonia heat pipe gas generation and long term system impact for the Space Telescope's Wide Field Planetary Camera

In the Space Telescope's Wide Field Planetary Camera (WFPC) project, eight heat pipes (HPs) are used to remove heat from the camera's inner electronic sensors to the spacecraft's outer, cold radiator surface. For proper device functioning and maximization of the signal-to-noise ratios, the Charge Coupled Devices (CCD's) must be maintained at -95 C or lower. Thermoelectric coolers (TEC's) cool the CCD's, and heat pipes deliver each TEC's nominal six to eight watts of heat to the space radiator, which reaches an equilibrium temperature between -15 C to -70 C. An initial problem was related to the difficulty to produce gas-free aluminum/ammonia heat pipes. An investigation was, therefore, conducted to determine the cause of the gas generation and the impact of this gas on CCD cooling. In order to study the effect of gas slugs in the WFPC system, a separate HP was made. Attention is given to fabrication, testing, and heat pipe gas generation chemistry studies.

Jones, J. A.↗

NASA NTRS1984

Laser pulse detection method and apparatus

A sensor is described for detecting the difference in phase of a pair of returned light pulse components, such as two components of a light pulse of an optical gyro. In an optic gyro, the two light components have passed in opposite directions through a coil of optical fiber, with the difference in phase of the returned light components determining the intensity of light shining on the sensor. The sensor includes a CCD (charge coupled device) that receives the pair of returned light components to generate a charge proportional to the number of photons in the received light. The amount of the charge represents the phase difference between the two light components. At a time after the transmission of the light pulse and before the expected time of arrival of the interfering light components, charge accumulating in the CCD as a result of reflections from components in the system, are repeatedly removed from the CCD, by transferring out charges in the CCD and dumping these charges.

Goss, W.↗

NASA NTRS1989

A multicolor imaging pyrometer

A multicolor imaging pyrometer was designed for accurately and precisely measuring the temperature distribution histories of small moving samples. The device projects six different color images of the sample onto a single charge coupled device array that provides an RS-170 video signal to a computerized frame grabber. The computer automatically selects which one of the six images provides useful data, and converts that information to a temperature map. By measuring the temperature of molten aluminum heated in a kiln, a breadboard version of the device was shown to provide high accuracy in difficult measurement situations. It is expected that this pyrometer will ultimately find application in measuring the temperature of materials undergoing radiant heating in a microgravity acoustic levitation furnace.

Frish, Michael B.↗

NASA NTRS1991

Thermal Strap And Cushion For Thermoelectric Cooler

Inexpensive cushioning strap proposed for use as thermal contact between thermoelectric cooler and device to be cooled, such as laser diode, infrared detector, or charge-coupled device for imaging. Provides high thermal conductance while minimizing thermal and mechanical stresses on thermoelectric cooler. Used as alternative to flexible thermal strap made of silver.

Jones, Jack A.↗

NASA NTRS1987

Laser pulse detection method and apparatus

A sensor is described for detecting the difference in phase of a pair of returned light pulse components, such as the two components of a light pulse of an optical gyro. In an optic gyro, the two light components have passed in opposite directions through a coil of optical fiber, with the difference in phase of the returned light components determining the intensity of light shining on the sensor. The sensor includes a CCD (charge coupled device) that receives the pair of returned light components to generate a charge proportional to the number of photons in the received light. The amount of the charge represents the phase difference between the two light components. At a time after the transmission of the light pulse and before the expected time of arrival of the interfering light components, charge accumulating in the CCD as a result of reflections from optical components in the system, are repeatedly removed from the CCD, by transferring out charges in the CCD and dumping these charges.

Goss, Willis C.↗

NASA NTRS2004

Fabrication of Robust, Flat, Thinned, UV-Imaging CCDs

An improved process that includes a high-temperature bonding subprocess has been developed to enable the fabrication of robust, flat, silicon-based charge-coupled devices (CCDs) for imaging in ultraviolet (UV) light and/or for detecting low-energy charged particles. The CCDs in question are devices on which CCD circuitry has already been formed and have been thinned for backsurface illumination. These CCDs may be delta doped, and aspects of this type of CCD have been described in several prior articles in NASA Tech Briefs. Unlike prior low-temperature bonding subprocesses based on the use of epoxies or waxes, the high-temperature bonding subprocess is compatible with the deltadoping process as well as with other CCD-fabrication processes. The present improved process and its bonding, thinning, and delta-doping subprocesses, are characterized as postfabrication processes because they are undertaken after the fabrication of CCD circuitry on the front side of a full-thickness silicon substrate. In a typical case, it is necessary to reduce the thickness of the CCD to between 10 and 20 m in order to take advantage of back-side illumination and in order to perform delta doping and/or other back-side treatment to enhance the quantum efficiency. In the prior approach to the fabrication of back-side-illuminated CCDs, the thinning subprocess turned each CCD into a free-standing membrane that was fragile and tended to become wrinkled. In the present improved process, prior to thinning and delta doping, a CCD is bonded on its front side to a silicon substrate that has been prefabricated to include cutouts to accommodate subsequent electrical connections to bonding pads on the CCD circuitry. The substrate provides structural support to increase ruggedness and maintain flatness. At the beginning of this process, the back side of a CCD as fabricated on a full-thickness substrate is polished. Silicon nitride is deposited on the back side, opposite the bonding pads on the front side, in order to define a relatively thick frame. The portion of the CCD not covered by the frame is the portion to be thinned by etching.

Grunthaner, Paula↗

NASA NTRS1991

Wire transfer of charge packets using a CCD-BBD structure for charge-domain signal processing

A structure for the virtual transfer of charge packets across metal wires is described theoretically and is experimentally verified. The structure is a hybrid of charge-coupled device (CCD) and bucket-brigade device (BBD) elements and permits the topological crossing of charge-domain signals in low power signal processing circuits. A test vehicle consisting of 8-, 32-, and 96-stage delay lines of various geometries implemented in a double-poly, double-metal foundry process is used to characterize the wire-transfer operation. Transfer efficiency ranging between 0.998 and 0.999 is obtained for surface n-channel devices with clock cycle times in the range from 40 ns to 0.3 ms. Transfer efficiency as high as 0.9999 is obtained for buried n-channel devices. Good agreement is found between experiment and simulation.

Fossum, Eric R.↗